CN1574475A - 用于电连接的支座/掩模结构 - Google Patents

用于电连接的支座/掩模结构 Download PDF

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Publication number
CN1574475A
CN1574475A CNA2004100459555A CN200410045955A CN1574475A CN 1574475 A CN1574475 A CN 1574475A CN A2004100459555 A CNA2004100459555 A CN A2004100459555A CN 200410045955 A CN200410045955 A CN 200410045955A CN 1574475 A CN1574475 A CN 1574475A
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China
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bearing
mask
layer
hole
arrangement according
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CN100388468C (zh
Inventor
J·R·安德鲁斯
B·J·格尔纳
R·施马赫滕伯格三世
C·斯伦内斯
S·V·舒尔茨
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Xerox Corp
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Xerox Corp
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    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
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Abstract

一种多层支座/掩模结构,其包括一个支座和一个掩模,支座具有多个支座孔,掩模具有多个与支座孔对准的掩模孔。

Description

用于电连接的支座/掩模结构
技术领域
本发明涉及一种用于互联电路结构的技术。
背景技术
可通过各种技术对电路结构例如电路板、集成电路模板和电路组件进行机械和/或电连接,但很难可靠且有效地对电路结构进行机械和电连接。
附图说明
图1是互联电路结构的一个实施例的平面示意图;
图2是图1所示互联电路结构的截面示意图;以及
图3-9是制造图1所示互联电路结构的各个阶段的横截面示意图。
具体实施方式
图1和2是利用这里所描述的技术制造的互联电路结构的一个实施例的平面示意图和横截面示意图。电路结构包括第一电路结构51,该第一电路结构51包括多个接触区域53。该电路结构还包括第二电路结构55,该第二电路结构55包括多个接触区域57。第一电路结构51的接触区域53与第二电路结构55的接触区域57相互对准。接触区域53通过导电柱或凸起59与对应的接触区域57电连接。具有一定图案形状的支座结构61设置在第一电路结构和第二电路结构之间。支座结构61包括多个孔63,每个孔围绕相互连接在一起的接触区域53、导电凸起59和接触区域57。作为图示的一个例子,具有一定图形形状的支座结构61包括一个粘接剂层。
第一和第二电路结构51和55中的每一个可包括电路板、软性电路、机电装置、集成电路模板、半导体组件、厚膜电路、陶瓷电路板或包括多个需要与另一电路结构进行电连接的接触区域的任何其它的电路结构。
图3-9示出了制造图1所示互联电路结构的各个步骤。
在图3中,在层状结构60上设有通路或孔63,层状结构60包括一个粘接剂层61,粘接剂层61设置在前衬层65和后衬层67之间。例如,层状结构60可包括一个多层带。粘接剂层61随后将成为图1和2所示的互联电路结构的支座61。前和后衬层65、67每一个都可以是一个柔性层,并可包括例如聚酯、聚酰亚胺、聚酰胺、聚醚亚胺、聚砜、聚醚砜、聚醚酮或聚苯硫。前和后衬层65、67每一个的厚度大约为5-250微米。另外,前和后衬层65、67每一个的厚度大约为10-100微米。作为一个特定的例子,前和后衬层65、67每一个的厚度大约为37微米。
例如,粘结支座层61可包括单个的层或一个双面带。例如,粘结支座层61还可包括丙烯酸、环氧树脂、酚醛、聚酰亚胺和/或硅酮粘接剂,并可包括热固性粘接剂或接触粘接剂。粘结支座层61的厚度大约为1-500微米。另外,粘结支座层61的厚度大约为10-100微米。作为一个特定的例子,粘结支座层61的厚度大约为25微米。
例如,孔63可通过激光切割、钻、冲或模制而成。孔63的激光切割可通过电流计扫描激光器例如二氧化碳或二极管激发固态激光器进行。在另一个实施例中,孔63的切割可利用接触掩模或投影掩模通过激元激光在扩展区域上进行,从而制造出孔的图案。作为示例性例子,孔63可以是环形或圆形的,且其直径大约为8-500微米。孔63从中心到中心的间隔距离大约是其直径的1.1-2倍。作为另一个例子,从中心到中心的间隔距离大约是其直径的1.1-10倍。孔63还可以是椭圆形、矩形或可实现所需电连接的其它任何适当的形状。
在图4中,层状掩模结构70被施加在带孔的层状结构60上。层状掩模结构70包括掩模粘接剂层71和掩模衬层75,并可包括例如一个多层带。掩模衬层75可以是柔性层,并可包括例如聚酯、聚酰亚胺、聚酰胺、聚醚亚胺、聚砜、聚醚砜、聚醚酮或聚苯硫。掩模衬层75的厚度大约为1-500微米。另外,掩模衬层75的厚度大约为10-100微米。作为一个特定的例子,掩模衬层75的厚度大约为25微米。掩模粘接剂层71可包括接触粘接剂例如硅酮或丙烯酸,且厚度大约为1-500微米。另外,掩模粘接剂层的厚度大约为5-50微米。掩模粘接剂层71还可包括UV固化粘接剂。
在图5中,层状掩模结构70上设有与层状结构60的孔63相互对准的掩模孔73。例如,在形成孔63的相同切割台处或在不同的切割台处,切割工具例如激光切割工具与层状结构60上的孔63对准,并形成掩模孔73。例如,可通过机器的观测装置来实现上述的对准操作。掩模孔73的激光切割可利用电流计扫描激光器例如二氧化碳或二极管激发固态激光器进行。在另一个实施例中,掩模孔73的切割可利用接触掩模或投影掩模通过激元激光在扩展区域上进行,从而制造出孔的图案。作为示例性例子,掩模孔73可以是圆形的,其直径大约为5-250微米。掩模孔还可以是其它的适当形状。
在图6中,从层状结构60上除去后衬层67,且剩下的支座/掩模层状结构包括支座粘接剂层61、前衬层65、掩模粘接剂层71和掩模衬层75,且剩下的支座/掩模层状结构例如通过热立桩形式附接在第一电结构51上。前衬层65和支座粘接剂层61包括支座承载层状结构60’。
在图7中,通过掩模孔73和支座孔63施加导电膏剂159。例如,导电膏剂159可包括银环氧树脂。导电膏剂159还可包括低熔解焊剂例如悬浮在焊剂中的铟合金粉。
在图8中,除去前衬层65和由掩模衬层75与掩模粘接剂层71构成的层状掩模结构70,以暴露支座粘接剂层61和导电环氧树脂柱59。
在图9中,将第二电路结构55固定在支座粘接剂层61和导电膏剂柱59上。
上面通过实施例对本发明进行了描述,应当理解,在本发明的宗旨和范围内,还可做出多种的变化和变型。

Claims (17)

1、一种支座/掩模结构,其包括:
衬层;
接附到衬层上的粘结支座层;
多个形成于衬层和粘结支座层上的支座孔;
附接到衬层上的掩模粘接剂层;
附接到掩模粘接剂层上的掩模层;
多个形成于掩模粘接剂层和掩模层上并与所述多个支座孔相互对准掩模孔。
2、根据权利要求1所述的支座/掩模结构,其特征在于,支座孔的直径大约为8-500微米。
3、根据权利要求1所述的支座/掩模结构,其特征在于,支座孔的直径大约为8-500微米,且从孔中心到孔中心的间隔距离大约是直径的1.1-2倍。
4、根据权利要求1所述的支座/掩模结构,其特征在于,掩模孔的直径大约为5-250微米。
5、根据权利要求1所述的支座/掩模结构,其特征在于,第一粘接剂层包括粘接剂,该粘接剂选自包括丙烯酸、环氧树脂、酚醛、聚酰亚胺和硅酮粘接剂的组。
6、根据权利要求1所述的支座/掩模结构,其特征在于,所述支座层包括双面带。
7、根据权利要求1所述的支座/掩模结构,其特征在于,所述支座层的厚度大约为1-500微米。
8、根据权利要求1所述的支座/掩模结构,其特征在于,所述掩模粘接剂层包括粘接剂,该粘接剂选自包括接触粘接剂和UV固化粘接剂的组。
9、根据权利要求1所述的支座/掩模结构,其特征在于,所述掩模粘接剂层的厚度大约为1-500微米。
10、根据权利要求1所述的支座/掩模结构,其特征在于,所述掩模粘接剂层的厚度大约为5-50微米。
11、根据权利要求1所述的支座/掩模结构,其特征在于,所述第一衬层、所述第二衬层和所述第三衬层中的每一个都包括一种材料,该材料选自包括聚酯、聚酰亚胺、聚酰胺、聚醚亚胺、聚砜、聚醚砜、聚醚酮或聚苯硫的组。
12、根据权利要求1所述的支座/掩模结构,其特征在于,所述衬层和所述掩模层中的每一个的厚度大约为1-500微米。
13、根据权利要求1所述的支座/掩模结构,其特征在于,所述衬层和所述掩模层中的每一个的厚度大约为10-100微米。
14、一种制造互联电路结构的方法,其包括:
将层状支座/掩模结构附接在第一电路结构的多个接触区域上,其中,多层支座/掩模结构包括粘结支座和掩模,该粘结支座具有多个与接触区域对准的支座孔,而该掩模具有多个与支座孔对准的掩模孔;
通过掩模孔和支座孔施加导电膏剂,从而在第一电路结构的所述多个接触区域上形成导电凸起;
除去掩模;
将第二电路结构接附到支座和导电凸起上。
15、根据权利要求14所述的方法,其特征在于,所述第一电路结构包括电路板、软性电路、机电装置、集成电路模板、半导体组件、厚膜电路和陶瓷电路板其中的一个。
16、根据权利要求14所述的方法,其特征在于,所述第二电路结构包括电路板、软性电路、机电装置、集成电路模板、半导体组件、厚膜电路和陶瓷电路板其中的一个。
17、一种通过权利要求14所述的方法制成的互联电路结构。
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CN109427755A (zh) * 2017-08-31 2019-03-05 美光科技公司 半导体装置组合件和其制造方法
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