CN1536634A - 半导体晶片的制造方法 - Google Patents
半导体晶片的制造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000227 grinding Methods 0.000 claims abstract description 35
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000003466 welding Methods 0.000 claims description 10
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
在制造由细丝键合形成突点的半导体晶片的情况下,在容易在键合焊盘上形成突点的同时,使突点的头部高度均一。提供一种半导体晶片的制造方法,其构成包含:用细丝键合在被形成于半导体晶片10表面上的键合焊盘11上形成突点14的工序;如埋入该突点14那样在该表面上被覆树脂形成树脂层15的树脂被覆工序;磨削该树脂层15使该突点14露出,使突点14的高度一致的磨削工序。
Description
技术领域
本发明涉及在表面上形成有突点的半导体晶片的制造方法。
背景技术
形成有多个IC和LSI等集成电路的半导体晶片被划片装置等分割成各个半导体芯片且在封装后用于各种电子设备中,但为了谋求电子设备的小型化和轻量化,也开发了将半导体芯片封装于称为CSP的芯片尺寸封装中的技术,并已实用化。
在分割半导体晶片前,在各集成电路中形成的键合焊盘上,通过使用例如称为接线柱突点键合的细丝键合的方法形成由50μm~100μm左右高度的金、银、铜等金属组成的突起(突点)(例如参照专利文献1),在用环氧树脂等树脂被覆电路面进行保护后,用划片装置等分割为电路的各个半导体芯片(例如参照专利文献2),由此形成CSP。而后,通过用焊锡等连接印刷基板上的端子和突点,CSP被安装在印刷基板上。
[专利文献1]
特开2000-332048号公报
[专利文献2]
特开2000-173954号公报
但是,突点的直径是50μm~100μm左右,在接线柱突点键合中,在突点的头部形成胡须状的突起,存在头部的高度不齐的问题。
而后,为了使突点头部的高度一致,需要用CMP(化学机械抛光)花费相当长的时间研磨突点头部,还存在生产性下降的问题。
因而,在制造由细丝键合形成有突点的半导体晶片的情况下,存在容易把突点形成在键合焊盘上的同时,以高效率的方法把突点头部的高度设置为均一这样的课题。
作为用于解决上述课题的具体的方法,本发明提供由通过细丝键合在形成于半导体晶片的表面上的键合焊盘上形成突点的突点形成工序;如埋入突点那样在表面上被覆树脂形成树脂层的树脂被覆工序;磨削树脂层使突点露出的磨削工序组成的半导体晶片的制造方法。
在这样构成的半导体晶片的制造方法中,在由细丝键合形成突点后,形成树脂层掩埋突点,因为通过磨削树脂层使突点露出,所以在可以以短时间形成突点的同时,可以高效率地使突点头部的高度一致。
附图说明
图1是展示形成有键合焊盘的半导体晶片的平面图。
图2是展示通过细丝键合形成突点的状态的断面图。
图3是展示突点形成工序结束后的半导体晶片的断面图。
图4是展示树脂被覆工序结束后的半导体晶片的断面图。
图5是在磨削工序中使用的磨削装置一例的斜视图。
图6是展示磨削工序结束后的半导体晶片的断面图。
具体实施方式
参照图1~图6说明本发明的实施方式的一例。在图1所示的半导体晶片10的表面上,在由纵横路S划分的区域上分别形成有电路C,在各电路C中,如图1中放大所示,形成有多个键合焊盘11。该键合焊盘11,是采用被形成在半导体晶片10的表面上的金属被膜的电极。
在各键合焊盘11上,例如使用图2所示的细丝键合装置20形成突点,当使用细丝键合装置20的情况下,如图2(A)所示,从毛细管21中形成的细孔,例如使用金属形成的细丝12向下方突出,通过在电吹管22和细丝12之间放电,如图2(B)所示,在细丝12的前端形成球13。
而后,如图2(C)所示,使毛细管21下降,在按压于键合焊盘11的状态下,通过从毛细管21施加超声波振动,或者进行热压接,如图2(D)所示,使毛细管21上升拉下细丝12,由此形成由细丝形成的突点14(突点形成工序)。如果这样进行突点形成工序,则通过电镀等可以短时间形成突点。进而,在突点14的上端,形成因断裂产生的断端的突起部14a。该突起部14a在每个突点上其高度不同。
如图3所示,如果在全部键合焊盘11上形成突点14,则以下如图4所示,被覆环氧树脂等树脂形成树脂层15(树脂被覆工序),掩埋全部突点14。在树脂层15的形成中,例如可以使用旋转涂布机。
在形成树脂层15后,例如通过使用图5所示的磨削装置30磨削树脂层15使突点14露出。在该磨削装置30中的构成是,从基台31的端部矗立起壁部分32,在该壁部分32的内侧面上在垂直方向上配设一对导轨33,由导轨33引导支撑板34升降,由此被安装在支撑板34上的磨削装置35升降。另外,在基台31上,配设转盘36可以转动,进而转盘36可以旋转支撑保持半导体晶片10的多个卡盘台37。
在磨削装置35中,其构成是,在具有垂直方向的轴心的主轴38的前端上安装着夹套39,进而在其下部固定着磨削轮40。在磨削轮40的下面固定着磨削砂轮41,随着主轴38的旋转磨削砂轮41旋转。进而,磨削装置,也可以在磨削轮40的下面固定刀具。
在使用该磨削装置30磨削被覆在半导体晶片10的表面上的树脂层15时,使树脂层15朝上把半导体晶片10保持在卡盘台37上位于磨削装置35的正下方,在使主轴38旋转的同时,使磨削装置35下降。而后,随着主轴38的转动在磨削砂轮41转动的同时,旋转的磨削砂轮41与被形成在半导体晶片表面上的树脂层15接触施加按压力,该树脂层15由磨削砂轮41磨削。这样通过进行规定量磨削,如图6所示,突点14露出(磨削工序)。这时,即使突点14的突起部分14a的高度不一致,也可以通过磨削使头部高度均一,同时,突点14的头部的面和树脂层15的上面变为同一面。因而,可以圆滑地和印刷基板的端子连接。另外,因为可以不采用CMP而通过磨削使突点14露出从而使头部一致,所以是高效率的,可以提高生产性。
如上所述,形成有突点的半导体晶片10,通过纵横切割图1所示的纵横路S而成为每个电路构成的半导体芯片。而后被形成在各个半导体晶片上的突点,通过和被搭载在各种电子设备内部的印刷基板的端子连接可以起到该芯片的功能。而后,由于突点的高度一致,因而可以可靠地进行和端子的连接,因为不引起接触不良等,所以还可以提高设备整体的可靠性。
如上所述,如果采用本发明的半导体晶片的制造方法,则在用细丝键合形成突点后,如掩埋突点那样形成树脂,因为磨削树脂层使突点露出使头部一致,所以在可以短时间形成突点的同时,因为可以用高效率的方法使突点的头部高度一致,所以可以高效率地制作高品质的半导体晶片。
Claims (1)
1.一种半导体晶片的制造方法,包括:
用细丝键合在半导体晶片表面上形成的键合焊盘上形成突点的突点形成工序;
在该表面上被覆树脂来形成树脂层,从而掩埋该突点的树脂被覆工序;以及
磨削该树脂层使该突点露出的磨削工序。
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JP5728423B2 (ja) | 2012-03-08 | 2015-06-03 | 株式会社東芝 | 半導体装置の製造方法、半導体集積装置及びその製造方法 |
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US6897566B2 (en) * | 2002-06-24 | 2005-05-24 | Ultra Tera Corporation | Encapsulated semiconductor package free of chip carrier |
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