CN1536634A - Semiconductor chip manufacturing method - Google Patents

Semiconductor chip manufacturing method Download PDF

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Publication number
CN1536634A
CN1536634A CNA2004100325194A CN200410032519A CN1536634A CN 1536634 A CN1536634 A CN 1536634A CN A2004100325194 A CNA2004100325194 A CN A2004100325194A CN 200410032519 A CN200410032519 A CN 200410032519A CN 1536634 A CN1536634 A CN 1536634A
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China
Prior art keywords
semiconductor wafer
prominent point
bumps
grinding
resin
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Pending
Application number
CNA2004100325194A
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Chinese (zh)
Inventor
关家一马
尚
荒井一尚
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Disco Corp
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Disco Corp
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN1536634A publication Critical patent/CN1536634A/en
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

To easily form bumps on a bonding pad and unify the heights of head of the bumps in case a semiconductor wafer is manufactured with bumps formed by wire bonding. The manufacturing method of the semiconductor wafer is constituted of a bump forming process of forming the bumps (14) on the bonding pad (11) formed on the surface of the semiconductor wafer (10) through wire bonding, a resin coating process of forming a resin layer (15) while applying resin onto the surface of the bumps so as to cover and bury the bumps (14), and a grinding process of grinding the resin layer (15) to expose the bumps (14) and unify the heights of the bumps (14).

Description

The manufacture method of semiconductor wafer
Technical field
The present invention relates to be formed with from the teeth outwards the manufacture method of the prominent semiconductor wafer of putting.
Background technology
The semiconductor wafer that is formed with integrated circuits such as a plurality of IC and LSI is divided into each semiconductor chip and is used for various electronic equipments after encapsulation by dicing device etc., but for miniaturization and the lightweight of seeking electronic equipment, also developed the technology of semiconductor die package in the chip size packages that is called CSP, and practicability.
Before dividing semiconductor wafer; on the bonding welding pad that in each integrated circuit, forms; form the projection of forming by metals such as the gold, silver of height about 50 μ m～100 μ m, copper (point of dashing forward) (for example with reference to patent documentation 1) by the method for using the filament bonding for example be called the prominent point of binding post bonding; after protecting with resin-coated circuit face such as epoxy resin; be divided into each semiconductor chip (for example with reference to patent documentation 2) of circuit with dicing device etc., form CSP thus.Then, by connect terminal and the prominent point on the printed base plate with scolding tin etc., CSP is installed on the printed base plate.
[patent documentation 1]
The spy opens the 2000-332048 communique
[patent documentation 2]
The spy opens the 2000-173954 communique
But the diameter of prominent point is about 50 μ m～100 μ m, in the prominent point of binding post bonding, forms the projection of beard shape at the head of prominent point, has the uneven problem of height of head.
Then, in order to make the height unanimity of the some head of dashing forward, need with the prominent point of CMP (chemico-mechanical polishing) cost considerable time grinding head, the problem that also exists productivity to descend.
Thereby, under the situation of making the semiconductor wafer that is formed with prominent point by the filament bonding, exist when being formed on prominent point on the bonding welding pad easily, be set to the such problem of homogeneous with the height of the prominent head of high efficiency method.
As the concrete method that is used to solve above-mentioned problem, the invention provides by be bonded in the prominent point that forms prominent point on the lip-deep bonding welding pad that is formed at semiconductor wafer by filament and form operation; As imbed the prominent point resin-coated operation of coated with resin formation resin bed like that from the teeth outwards; The manufacture method of the semiconductor wafer that the grinding process that the grinding resin bed exposes prominent point is formed.
In the manufacture method of the semiconductor wafer that constitutes like this, form prominent point by the filament bonding after, form resin bed and bury prominent point, because prominent point is exposed by the grinding resin bed, so when can forming prominent point, can make the height unanimity of prominent some head expeditiously with the short time.
Description of drawings
Fig. 1 is a plane graph of showing the semiconductor wafer that is formed with bonding welding pad.
Fig. 2 shows the sectional drawing that forms the state of prominent point by the filament bonding.
Fig. 3 shows that prominent point forms the sectional drawing of the semiconductor wafer after operation finishes.
Fig. 4 is a sectional drawing of showing the semiconductor wafer after resin-coated operation finishes.
Fig. 5 is the oblique view of grinding attachment one example used in grinding process.
Fig. 6 is a sectional drawing of showing the semiconductor wafer after grinding process finishes.
Embodiment
One example of embodiments of the present invention is described with reference to Fig. 1～Fig. 6.On the surface of semiconductor wafer shown in Figure 1 10, on by the zone that road S divides in length and breadth, be formed with circuit C respectively, in each circuit C, shown in amplifying among Fig. 1, be formed with a plurality of bonding welding pads 11.This bonding welding pad 11 is the electrodes that adopt the lip-deep metal tunicle that is formed on semiconductor wafer 10.
On each bonding welding pad 11, for example use filament bonding apparatus shown in Figure 2 20 to form prominent point, under the situation of using filament bonding apparatus 20, shown in Fig. 2 (A), the pore that from capillary 21, forms, the filament 12 that for example uses metal to form is outstanding downwards, by discharge between electric blowpipe 22 and filament 12, shown in Fig. 2 (B), at the front end formation ball 13 of filament 12.
Then, shown in Fig. 2 (C), capillary 21 is descended, under the state that presses on bonding welding pad 11, by applying ultrasonic vibration, perhaps carry out thermo-compressed, shown in Fig. 2 (D) from capillary 21, make capillary 21 filament 12 of leaving behind that rises, form the prominent point 14 (prominent putting forms operation) that forms by filament thus.Form operation if dash forward so a little, then can form prominent some the short time by electroplating etc.And then, in the upper end of prominent point 14, form the jut 14a of the broken ends of fractured bone that produces because of fracture.This jut 14a dashes forward at each and puts its highly difference.
As shown in Figure 3, if all forming prominent point 14 on the bonding welding pads 11, then below as shown in Figure 4, resin-shaped resin layers 15 (resin-coated operation) such as lining epoxy resin are buried all prominent point 14.In the formation of resin bed 15, for example can use the rotary coating machine.
After forming resin bed 15, for example by using grinding attachment shown in Figure 5 30 grinding resin beds 15 that prominent point 14 is exposed.Formation in this grinding attachment 30 is, stand wall part 32 from the end of base station 31, on the medial surface of this wall part 32, set pair of guide rails 33 in vertical direction,, be installed in grinding attachment 35 liftings on the supporting bracket 34 thus by 34 liftings of guide rail 33 guide support plates.In addition, on base station 31, setting rotating disk 36 can rotate, and then rotating disk 36 can rotate a plurality of chuck table 37 that support maintenance semiconductor wafer 10.
In grinding attachment 35, its formation is, on the front end of the main shaft 38 in the axle center with vertical direction chuck 39 is installed, and then fixing Grinding wheel 40 in its underpart.Below Grinding wheel 40, fixing abrasive grinding wheel 41, along with rotary grinding emery wheel 41 rotations of main shaft 38.And then, grinding attachment, also can be below Grinding wheel 40 fixed cutting tool.
When using these grinding attachment 30 grindings to be overlayed on the lip-deep resin bed 15 of semiconductor wafer 10, make resin bed 15 up semiconductor wafer 10 remain on be positioned on the chuck table 37 grinding attachment 35 under, when making main shaft 38 rotations, grinding attachment 35 is descended.Then, along with the rotation of main shaft 38 when abrasive grinding wheel 41 rotates, the abrasive grinding wheel 41 of rotation contacts with resin bed 15 on being formed on semiconductor wafer surface and applies pressing force, this resin bed 15 is by abrasive grinding wheel 41 grindings.By carrying out the ormal weight grinding, as shown in Figure 6, prominent point 14 exposes (grinding process) like this.At this moment,, also can make the height of head homogeneous, simultaneously, become with one side above the face of the head of prominent point 14 and the resin bed 15 by grinding even the height of the jut 14a of prominent point 14 is inconsistent.Thereby, can be connected with the terminal of printed base plate sleekly.In addition, make the head unanimity,, can improve productivity thereby by grinding prominent point 14 is exposed so be high efficiency because can not adopt CMP.
As mentioned above, be formed with the semiconductor wafer 10 of prominent point, become the semiconductor chip that each circuit constitutes by cutting the S of road in length and breadth shown in Figure 1 in length and breadth.Then be formed on the prominent point on each semiconductor wafer, by being connected the function that can play this chip at the terminal of the printed base plate of various electronic equipment internal with the quilt lift-launch.Then, because the height unanimity of prominent point, thereby can carry out reliably and being connected of terminal, because do not cause loose contact etc., so can also improve the reliability of equipment integral.
As mentioned above, if adopt the manufacture method of semiconductor wafer of the present invention, then form prominent point with the filament bonding after, as form resin burying at prominent, because the grinding resin bed exposes prominent point and makes the head unanimity, so when can forming prominent some the short time, because can make the height of head unanimity of prominent point, so can make high-quality semiconductor wafer expeditiously with high efficiency method.

Claims (1)

1. the manufacture method of a semiconductor wafer comprises:
Be bonded in the prominent point that forms prominent point on the bonding welding pad that forms on the semiconductor wafer surface with filament and form operation;
Coated with resin forms resin bed on this surface, thereby buries the resin-coated operation of this prominent point; And
The grinding process that this resin bed of grinding exposes this prominent point.
CNA2004100325194A 2003-04-08 2004-04-08 Semiconductor chip manufacturing method Pending CN1536634A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003104038A JP2004311767A (en) 2003-04-08 2003-04-08 Manufacturing method of semiconductor wafer
JP1040382003 2003-04-08

Publications (1)

Publication Number Publication Date
CN1536634A true CN1536634A (en) 2004-10-13

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CNA2004100325194A Pending CN1536634A (en) 2003-04-08 2004-04-08 Semiconductor chip manufacturing method

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US (1) US20040203187A1 (en)
JP (1) JP2004311767A (en)
CN (1) CN1536634A (en)
DE (1) DE102004017182A1 (en)
SG (1) SG139533A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107866724A (en) * 2016-09-23 2018-04-03 株式会社冈本工作机械制作所 The manufacture method and semiconductor- fabricating device of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7351657B2 (en) * 2005-06-10 2008-04-01 Honeywell International Inc. Method and apparatus for applying external coating to grid array packages for increased reliability and performance
JP5728423B2 (en) * 2012-03-08 2015-06-03 株式会社東芝 Semiconductor device manufacturing method, semiconductor integrated device, and manufacturing method thereof

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JP4249827B2 (en) * 1998-12-04 2009-04-08 株式会社ディスコ Manufacturing method of semiconductor wafer
US6897566B2 (en) * 2002-06-24 2005-05-24 Ultra Tera Corporation Encapsulated semiconductor package free of chip carrier
US6787392B2 (en) * 2002-09-09 2004-09-07 Semiconductor Components Industries, L.L.C. Structure and method of direct chip attach

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107866724A (en) * 2016-09-23 2018-04-03 株式会社冈本工作机械制作所 The manufacture method and semiconductor- fabricating device of semiconductor device

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SG139533A1 (en) 2008-02-29
DE102004017182A1 (en) 2004-11-18
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