CN1519889A - 半导体装置的制造设备的清洁方法 - Google Patents
半导体装置的制造设备的清洁方法 Download PDFInfo
- Publication number
- CN1519889A CN1519889A CNA2004100004672A CN200410000467A CN1519889A CN 1519889 A CN1519889 A CN 1519889A CN A2004100004672 A CNA2004100004672 A CN A2004100004672A CN 200410000467 A CN200410000467 A CN 200410000467A CN 1519889 A CN1519889 A CN 1519889A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- gas
- semiconductor device
- cleaning gas
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 244
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 213
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 15
- 230000003213 activating effect Effects 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0005789 | 2003-01-29 | ||
| KR1020030005789A KR20040069420A (ko) | 2003-01-29 | 2003-01-29 | 박막 증착 장치의 챔버 세정방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1519889A true CN1519889A (zh) | 2004-08-11 |
Family
ID=32985725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100004672A Pending CN1519889A (zh) | 2003-01-29 | 2004-01-29 | 半导体装置的制造设备的清洁方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040182415A1 (ko) |
| KR (1) | KR20040069420A (ko) |
| CN (1) | CN1519889A (ko) |
| TW (1) | TW200416804A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI476039B (zh) * | 2009-04-02 | 2015-03-11 | Clean Technology Co Ltd | 於排氣處理裝置中之由磁場所致之電漿控制方法、及使用有此之排氣處理裝置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083862B2 (en) * | 2007-03-09 | 2011-12-27 | Tokyo Electron Limited | Method and system for monitoring contamination on a substrate |
| US20080228308A1 (en) * | 2007-03-13 | 2008-09-18 | Tokyo Electron Limited | Critical dimension uniformity optimization |
| JP5004822B2 (ja) * | 2008-02-20 | 2012-08-22 | 東京エレクトロン株式会社 | 洗浄方法及び基板処理装置 |
| US9174250B2 (en) * | 2009-06-09 | 2015-11-03 | Samsung Display Co., Ltd. | Method and apparatus for cleaning organic deposition materials |
| US8932406B2 (en) * | 2012-09-04 | 2015-01-13 | Matheson Tri-Gas, Inc. | In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use |
| CN106526915B (zh) * | 2016-11-28 | 2019-04-30 | 武汉华星光电技术有限公司 | 基板清洁干燥装置及其维护方法 |
| JP6702910B2 (ja) * | 2017-04-17 | 2020-06-03 | ファナック株式会社 | レーザ加工装置 |
| US11772137B2 (en) * | 2021-07-23 | 2023-10-03 | Applied Materials, Inc. | Reactive cleaning of substrate support |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060397A (en) * | 1995-07-14 | 2000-05-09 | Applied Materials, Inc. | Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus |
| US6857433B2 (en) * | 2002-07-22 | 2005-02-22 | Air Products And Chemicals, Inc. | Process for cleaning a glass-coating reactor using a reactive gas |
-
2003
- 2003-01-29 KR KR1020030005789A patent/KR20040069420A/ko not_active Application Discontinuation
-
2004
- 2004-01-27 US US10/765,296 patent/US20040182415A1/en not_active Abandoned
- 2004-01-29 CN CNA2004100004672A patent/CN1519889A/zh active Pending
- 2004-01-29 TW TW093102005A patent/TW200416804A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI476039B (zh) * | 2009-04-02 | 2015-03-11 | Clean Technology Co Ltd | 於排氣處理裝置中之由磁場所致之電漿控制方法、及使用有此之排氣處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040069420A (ko) | 2004-08-06 |
| TW200416804A (en) | 2004-09-01 |
| US20040182415A1 (en) | 2004-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |