CN1519889A - Cleaning method for mfg. appts. of semiconductor device - Google Patents

Cleaning method for mfg. appts. of semiconductor device Download PDF

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Publication number
CN1519889A
CN1519889A CNA2004100004672A CN200410000467A CN1519889A CN 1519889 A CN1519889 A CN 1519889A CN A2004100004672 A CNA2004100004672 A CN A2004100004672A CN 200410000467 A CN200410000467 A CN 200410000467A CN 1519889 A CN1519889 A CN 1519889A
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cleaning
gas
semiconductor device
cleaning gas
gases
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����ֲ
尹守植
廉根永
李来应
金基俊
吴昌铉
金知晃
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Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A cleaning method of an apparatus for manufacturing a semiconductor device includes providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, wherein the first cleaning gas includes a fluorocarbon gas and an oxygen gas and the second cleaning gas includes nitrogen, activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power, and exhausting residues cleaned by the activated mixture and remaining gases.

Description

Cleaning method for manufacturing equipment of semiconductor device
Technical Field
The present invention relates to a method for cleaning a manufacturing apparatus of a semiconductor device, and more particularly, to a method for cleaning a thin film deposition apparatus.
This application claims priority to application No. 2003-05789, which was filed in korea on 29/1/2003 and is hereby incorporated by reference.
Background
Generally, a thin film of a semiconductor device can be formed by various methods, such as a Chemical Vapor Deposition (CVD) method. After each layer of film is deposited, the process chamber of the film deposition apparatus must be cleaned to remove the source gases and residues remaining on the inner walls of the process chamber and the interior thereof.
Such as CF4、C2F6、C3F8、C4F8And SF6High fluorine compound (PFC) gases are commonly used to remove silicon, silicon oxide (SiO) remaining in the process chamberx) Or silicon nitride (SiN)x) The cleaning gas of (1). However, when the process chamber is cleaned using the PFC gas, once the reaction efficiency of the PFC gas is deteriorated to recombine into other gases at the exhaust port of the process chamber, a gas causing an increase in the earth temperature is generated. Such gases that cause an increase in earth temperature typically absorb Infrared (IR) light to cause an increase in earth temperature. Therefore, when the process chamber of the thin film deposition apparatus is cleaned by various methods, it is common to use an alternative gas to the PFC gas or reduce the use of the PFC gas in order to prevent the generation of a gas causing an increase in the earth temperature.
Recently, NF has been widely used3Replacing PFC gas as a cleaning gas, and NF3Has a good cleaning effect and discharges only a small amount of gas causing an increase in the temperature of the earth. However, due to NF3The manufacturing process of (a) is extremely complicated, so that NF3Usually in short supply. Thus, once NF is used3When used as a cleaning gas, it is expensive and increases the production cost. In addition, when NF is used3Cleaning filmToxic fluorine gas (F) in a process chamber of a deposition apparatus2) Tends to form a residue. During cleaning, F2The inner wall of the processing chamber is corroded, thereby damaging the manufacturing equipment of the semiconductor device.
Although other cleaning gases may be used, the cleaning effect of other cleaning gases is far lessAnd NF3The cleaning effect of (1).
Disclosure of Invention
Accordingly, the present invention provides a cleaning method of a manufacturing apparatus of a semiconductor device, which can avoid various disadvantages of the known apparatus.
The cleaning method of the manufacturing apparatus of the semiconductor device provided by the invention has the advantages that: free from the generation of gases that cause the temperature of the earth to rise.
Another advantage of the cleaning method of the manufacturing apparatus of the semiconductor device provided in the invention is that: the gas released after the cleaning of the manufacturing equipment of the semiconductor device, which causes the temperature rise of the earth, is greatly reduced.
Yet another advantage of the cleaning method of the manufacturing apparatus of the semiconductor device provided in the invention is that: greatly improving the cleaning effect and the cleaning efficiency.
Yet another advantage of the cleaning method of the manufacturing apparatus of the semiconductor device provided in the invention is that: the inside of the process chamber of the manufacturing apparatus can be uniformly cleaned.
Other objects and advantages of the present invention will become apparent from the following detailed description and the appended claims.
To achieve the above advantages, as shown in the following embodiments, a method for cleaning a semiconductor device manufacturing apparatus is provided, which includes the steps of: a gas supply step of supplying a first cleaning gas and a second cleaning gas into a processing chamber and forming the first and second cleaning gases into a mixed gas, wherein the first cleaning gas contains a carbon fluoride gas and oxygen gas, and the second cleaning gas contains nitrogen gas; an activation step of activating a mixed gas formed by the first and second cleaning gases by a high frequency energy; and a step of exhausting the residue and residual gas left after the activated mixed gas cleaning.
According to another embodiment of the present invention, there is provided a method for cleaning a manufacturing apparatus of a semiconductor device, comprising the steps of: a step of activating a first cleaning gas by high frequency energy, wherein the first cleaning gas comprises carbon fluoride gas and oxygen gas; a step of activating a second cleaning gas by a high frequency energy, wherein the second cleaning gas contains nitrogen; a step of mixing the activated first and second cleaning gases to form a mixed gas of the first andsecond cleaning gases; and an exhausting step of exhausting the residue and residual gas left after the mixed gas cleaning.
The above description is for the purpose of convenience of description of the preferred embodiment of the present invention, and is not intended to limit the present invention in a limited sense to the preferred embodiment.
Drawings
Fig. 1 is an apparatus diagram showing a cleaning method of a manufacturing apparatus of a semiconductor device employing a first embodiment of the present invention.
Fig. 2 is an apparatus diagram showing a cleaning method of a manufacturing apparatus of a semiconductor device according to a fourth embodiment of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
According to the present invention, the process chamber of the thin film deposition apparatus is cleaned using the first and second cleaning gases simultaneously. The first cleaning gas contains carbon fluoride gas and oxygen gas, and the second cleaning gas contains nitrogen gas. The flow ratio of the second cleaning gas to the first cleaning gas is fixed
Preferably, the carbon fluoride gas is C3F8、C4F8And C4F8One of O. Activating the carbon fluoride gas into F radicals by the plasma, thereby reacting the F radicals with silicon remaining in the silicon, silicon nitride or silicon oxide in the processing chamber to form SiF4And discharged. Thus, a cleaning effectcan be achieved.
The oxygen gas is sufficient to uniformly disperse the carbon fluoride gas and the second cleaning gas containing nitrogen gas. In addition, the oxygen gas can also prevent the carbon fluoride gas from becoming (CF)2)nThe polymer material can oxidize the residue in the processing chamber to improve the cleaning effect.
The carbon fluoride gas and the oxygen gas are simultaneously supplied into the processing chamber or into a plasma generating system separately provided outside the processing chamber, thereby forming the first cleaning gas of the present invention. Although the rapid supply of carbon fluoride gas and oxygen gas is sufficient to enhance the cleaning effect, the amount of gas released to raise the earth's temperature is also increased. Therefore, it is necessary to supply the carbon fluoride gas and the oxygen gas at appropriate flow rates.
The flow rate of oxygen gas must be larger than that of carbon fluoride gas, and preferably, the flow rate ratio of carbon fluoride gas to oxygen gas is 0.1 to 0.5. If the carbon fluoride gas is supplied without reaching the above flow ratio, it is difficult to achieve the intended cleaning effect. If the carbon fluoride gas is supplied in excess of the above-mentioned flow ratio, the time of the carbon fluoride gas in the processing chamber becomes short due to the excessively large flow rate, so that the optimum cleaning efficiency cannot be obtained with the excessively large flow rate.
In another aspect, the cleaning gas used in the present invention further includes a second cleaning gas containing nitrogen. The flow ratio of the second cleaning gas to the first cleaning gas is supplied at about 0.01 to 0.5. If the second cleaning gas is supplied without reaching the above flow ratio, the desired cleaning effect cannot be achieved, and if the second cleaning gasis supplied with a flow ratio exceeding the above flow ratio, the cleaning effect and the amount of gas generated to raise the temperature of the earth are not better according to the excessive flow ratio.
The second cleaning gas is selected from N2NO and N2One of O. By passingThe plasma activates the second cleaning gas to NO or NO radicals, and removes nitrogen or oxygen from the surface of the residual film in the processing chamber by the reactions of the following equations (1) to (4), thereby accelerating the reaction between the cleaning gas and the silicon on the surface of the film, wherein the nitrogen or oxygen is removed, and the carbon fluoride gas is decomposed to generate F radicals.
(1)
(2)
(3)
(4)
In addition, the oxygen in the first cleaning gas and the second cleaning gas are sufficient to reduce the amount of gas generated by the cleaning process that causes the temperature of the earth to rise. The carbon fluoride gas of the present invention will reform into various gases, such as CF, during the cleaning process4、C2F6、C3F8、C4F8、COF2、SiF4HF, etc.
Carbon tetrafluoride (CF) which is most likely to cause an increase in the earth temperature among the fluorine-containing gases by plasma4) Reacting with O free radicals decomposed from oxygen, and converting into gases less prone to raise earth temperature, such as COxOr Cx.And, CF4Also reacts with N radicals decomposed from the second cleaning gas, and can be converted into gases, such as CN or NF, which are not liable to cause rise in the earth temperaturex. Thus, the cleaning gas of the present invention sufficiently reduces the effect of PFC gases generated during chamber cleaning on the rise in earth temperature.
The damage caused by the supply and exhaust gases to the rise in earth temperature can be quantified by Destructive Removal Effectiveness (DRE) and Million Metric Tons of Carbon Equivalent (MMTCE), respectively. The values of DRE and MMTCE are calculated using the following equations (1) and (2), respectively:
DRE(％)＝[1-Co/Ci]x100 … formula (1)
Wherein C isiVolume concentration of gas, C, before plasma cleaningoIs the gas volume concentration after plasma cleaning, and
MMTCE ═ Σ 12/44 × { Q (kg) × GWP/109… formula (2)
Where Q is the total amount of gases released (in kilograms) during the cleaning process and GWP is the degree to which various components contribute to the rise in earth temperature (accounting for the effect over a one hundred year period).
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
First embodiment
Fig. 1 is an apparatus diagram showing a cleaning method of a manufacturing apparatus of a semiconductor device employing a first embodiment of the present invention. In accordance with a first embodiment of the present invention, the cleaning gas is activated by a remote plasma generator 70 outside the chamber 10. One end of the remote plasma generator 70 is connected to a Radio Frequency (RF) power source 20, and the other end of the remote plasma generator 70 is grounded. A gas inlet (not shown) is connected to the remote plasma generator 70. The plasma generated by the remote plasma generator 70 flows into the processing chamber 10 through the plasma inlet 31. The substrate holder 16 is disposed in the processing chamber 10, and the exhaust line 32 is connected to the processing chamber 10 for removing residues generated during the cleaning process. The exhaust pipe 32 is also connected to the booster pump 34 and the dry pump 36, and a control valve 40 is provided in the exhaust pipe 32. The pressure of the process chamber 10 is regulated by the control valve 40. Using nitrogen (N)2) As a driving gas for the dry pump 36, and N2The flow rate of (c) is kept constant during the cleaning process. The remote plasma generator 70 uses a remote inductively coupled plasma source (ICP).
The cleaning speed of the process chamber 10 is measured using the step profiler 50 and a fourier transform infrared (FT-IR) mass spectrometer 60 is provided at one end of the exhaust pipe 32 to measure the MMTCE value of the PFC gas generated during the cleaning process.
The remote plasma generator 70 uses 13.56MHz as the RF source. During cleaning, an RF source of about 500 watts is applied to the remote plasma generator 70 and the pressure of the process chamber 10 is maintained at 300 meters-Dorr (mTorr). Silicon nitride (not shown) is used as a sample for measuring the cleaning speed of the processing chamber 10, and the sample is placed at three positions, i.e., the center of the substrate holder 16, the side wall of the processing chamber 10, and the front wall of the processing chamber 10.
C4F8Is carbon fluoride gas contained in the first cleaning gas, and N2O is a second cleaning gas. Since the fastest cleaning speed of the silicon nitride is C4F8(20sccm)/O2(140sccm), so the flow rate of C is about 20sccm4F8And O with a flow rate of about 140sccm2Supplied to a remote plasma generator 70. Using only C without using a second cleaning gas4F8/O2The cleaning speed of (2) is about 110 nm/min.
Introducing N as a second cleaning gas in a flow ratio of 0.05 to 0.20 to the first cleaning gas2O, wherein the total flow rate of the first cleaning gas is 160sccm, and the cleaning speed, DRE, and MMTCE values at various flow ratios are measured.
Will N2Addition of O to C4F8/O2The cleaning speed can be improved when the proportion of the first cleaning gas reaches 0.05, and the fastest cleaning speed is 300 nanometers/minute when the proportion reaches 0.05. However, with respect to N in a ratio of 0.052For cleaning speed of O, more N is added2O does not further increase the cleaning speed.
Although the cleaning speed varies between the center of the substrate holder 16, the sidewall of the chamber 10, and the front wall of the chamber 10, the difference is within 10%, so that a very uniform cleaning effect can be achieved.
Using N2When O is, C4F8Is higher than 99%, so all C supplied4F8Have all decomposed completely during cleaning.
The PFC gas produced by the cleaning process is measured for a period of about two minutes and the MMTCE value of the PFC gas is reduced until N2Addition of O to C4F8/O2The ratio of (A) to (B) is up to 0.15. Thus, N is2Addition of O to C4F8/O2In which will beThe influence on the rise of the earth temperature is suppressed extremely effectively.
Further, the MMTCE value of the PFC gas generated when the cleaning speed of silicon nitride was 1,000nm was calculated. When the first cleaning gas is not added with N2At O, MMTCE is about 1.3X 10-9. When adding N2When the ratio of O to the first cleaning gas is 0.05, the MMTCE is about no N added275% in the case of O is 3.5X 10-10. When adding N2At a ratio of O to first cleaning gas of 0.2, the MMTCE is about 5.0 × 10-10。
Second embodiment
According to a second embodiment, the remote plasma generator 70 of FIG. 1 is supplied with an RF source of about 800 watts to generate a plasma and maintain the pressure of the processing chamber 10 of FIG. 1 at 400 meters-torr (mTorr). Other conditions of the second embodiment are identical to those of the first embodiment, and the apparatus as that of the first embodiment is also employed. The samples for measuring the cleaning speed of the processing chamber are placed at three positions, i.e., the center of the substrate holder 16, the side walls of the processing chamber 10, and the front wall of the processing chamber 10.
C4F8O is carbon fluoride gas contained in the first cleaning gas, and N2O or NO is the second cleaning gas. A flow rate of C of about 40sccm4F8O and O with a flow rate of about 180sccm2Supplied to a remote plasma generator 70. Using only C without using a second cleaning gas4F8O/O2The cleaning speed of (1) is about 118 nm/min, and the DRE and MMTCE are 96% and 7.023 × 10 respectively-10。
Introducing N as a second cleaning gas in a flow ratio of 0.05 to 0.25 to the first cleaning gas2O or NO, wherein the total flow rate of the first cleaning gas is 220sccm, and measuredCleaning speed, DRE and MMTCE values of cleaning gas at various flow ratios.
When using N2When O is the second cleaning gas, N is added2Addition of O to C4F8O/O2The cleaning speed can be increased by the first cleaning gas of (1,190 nm/min) and the fastest cleaning speed is in a ratio of 0.15. However, the relative ratio is 0.15 is N2For cleaning speed of O, more N is added2O does not further increase the cleaning speed. The difference in cleaning speed was measured at three points by about 13%. Whether or not N is added2O，C4F8DRE values for O were all above 96%. N in an addition ratio of 0.052O to C4F8O/O2The MMTCE value was reduced to about 95%. Thus, N is2Addition of O to C4F8O/O2In which the influence on the rise of the earth temperature can be suppressed very effectively.
When NO is used as an addition to C4F8O/O2The cleaning speed can be increased by the second cleaning gas of (4), and the fastest cleaning speed is 1,150 nm/min at a ratio of 0.05. Even if the NO addition ratio exceeds 0.05, the cleaning speed is the cleaning speed at the NO ratio of 0.05. Although the cleaning speed is different in the three places, the difference is within 11%, so that the extremely uniform cleaning effect can be achieved. Whether or not NO, C is added4F8DRE values for O were all the same. C with 0.05 NO addition relative to MMTCE without NO addition4F8O/O2The MMTCE value was reduced to 93%.
Third embodiment
According to a third embodiment, the RF source generating the plasma is 300 Watts and the pressure in the process chamber is 400 mTorr. A third embodiment is a Capacitively Coupled Plasma (CCP) system.
Silicon nitride (5 cm. times.5 cm) was formed on a silicon wafer as a sample for measuring the cleaning speed of the process chamber. C4F8O is carbon fluoride gas contained in the first cleaning gas, and N2Is a second cleaning gas. C with a flow rate of 16sccm4F8O and O with a flow rate of 64sccm2Into the process chamber. The cleaning speed without using the second cleaning gas is about 507.7 nm/min, and DRE and MMTCE are 98.38% and 3.58 × 10 respectively-9。
Introducing N as a second cleaning gas in a flow ratio of 0.05 to 0.20 to the first cleaning gas2Wherein the total flow rate of the first cleaning gas is 80sccm, and the cleaning rate at various flow rate ratios is measuredDegree, DRE, and MMTCE values.
Will N2Is added to C4F8O/O2The cleaning speed can be increased when the first cleaning gas is added, and the fastest cleaning speed is to add N with the proportion of 0.102C of (A)4F8O/O2. Adding N in a ratio of 0.102C of (A)4F8O/O2Than without addition of N2C of (A)4F8O/O2 Cleaning speed ofBlock 32. 5 percent. However, with respect to N in a ratio of 0.102In terms of cleaning speed of (2), more N is added2O does not further increase the cleaning speed.
When N is present2Is added to C4F8O/O2In a ratio of 0.05 to 0.20, C4F8The DRE value of O will be higher than 97%. Relative to no addition of N2With respect to the MMTCE value of the cleaning gas of (2), N is added in a ratio of 0.102C of (A)4F8O/O2The MMTCE value of (a) will decrease to 38.0%.
Fourth embodiment
Fig. 2 is an apparatus diagram showing a cleaning method of a manufacturing apparatus of a semiconductor device according to a fourth embodiment of the present invention.
In fig. 2, an upper electrode 12 and a lower electrode 14 are provided in a process chamber 10. The upper electrode 12 is connected to a Radio Frequency (RF) power supply 20, and the lower electrode 14 is grounded. A gas inlet 30 is provided in the processing chamber 10, and a substrate holder 16 is provided in the processing chamber 10. An exhaust line 32 is connected to the chamber 10 for removing residues generated after cleaning. The exhaust pipe 32 is also connected to the booster pump 34 and the dry pump 36, and a control valve 40 is provided in the exhaust pipe 32. The pressure of the process chamber 10 is regulated by the control valve 40. Using nitrogen (N)2) As a driving gas for the dry pump 36, and N2The flow rate of (c) is kept constant during the cleaning process. The cleaning speed of the process chamber 10 is measured using the step profiler 50 and a fourier transform infrared (FT-IR) mass spectrometer 60 is provided at one end of the exhaust pipe 32 to measure the MMTCE value of the PFC gas generated during the cleaning process. A sample for measuring the cleaning speed was placed on the substrate holder.
A fourth embodiment of the present invention is to generate plasma using a Capacitive Coupling Plasma (CCP) system. An RF source of 350 watts is used and the pressure of the process chamber is maintained at 500mTorr during the cleaning process.
C4F8O is carbon fluoride gas contained in the first cleaning gas, and N2O or NO is the second cleaning gas. The flow rate of C is about 16sccm4F8O and O with a flow rate of about 64sccm2Into the process chamber 10. Using only Cwithout using a second cleaning gas4F8O/O2The cleaning speed of (1) is about 600 nm/min, and DRE and MMTCE are 98% and 3.6 × 10 respectively-10。
Introducing N as a second cleaning gas in a flow ratio of 0.05 to 0.25 to the first cleaning gas2O or NO, wherein the total flow rate of the first cleaning gas is 80sccm, and the cleaning speed, DRE and MMTCE values of the second cleaning gas at various flow ratios are measured.
Addition of N2O or NO to C4F8O/O2The cleaning speed of the first cleaning gas is increased, and the ratio of the first cleaning gas to the cleaning gas is preferably 0.05 to 0.15. NO addition at a cleaning rate greater than N addition2Cleaning speed of O.
The DRE is in the range of 95% to 99% regardless of whether or what second cleaning gas is added. Adding a second cleaning gas to C4F8O/O2Will lower the MMTCE value. The silicon nitride normalized to 1,000 nm/min MMTCE had a cleaning rate of about 5.66X 10 when no second cleaning gas was added-10. The normalized MMTCE value will decrease as the second clean gas is added to the first clean gas and is 2.52 × 10 at 0.15 NO-10And N at 0.152O is 3.31X 10-10。
Fifth embodiment
C3F8Is carbon fluoride gas contained in the first cleaning gas, and N2NO or N2O is a second cleaning gas. A flow rate of C of about 150sccm3F8And a flow rate of about 35O of 0sccm2Into the process chamber 10. When the second cleaning gas is not used, the cleaning speed is about 258.9 nm/min, and the DRE and MMTCE are 99% and 1.4 × 10 respectively-10。
When using N2The fastest cleaning speed is that N with 0.10 is added2C of (A)3F8/O2And is 304.3 nm/min. When NO is used, the fastest cleaning rate is C with 0.05 NO added3F8/O2And 433 nm/min. When using N2O, the fastest cleaning speed is N added with 0.102C of O3F8/O2And 426.5 nm/min.
The DRE is 99% regardless of whether or not the second cleaning gas is added.
Will N2NO and N2Adding a second cleaning gas such as O to C3F8/O2The MMTCE value will be decreased. The MMTCE value is greatly reduced when the ratio of the second cleaning gas to the first cleaning gas is 0.05, and is reduced to 30% to 40% of that when the second cleaning gas is not added.
Sixth embodiment
C4F8Is carbon fluoride gas contained in the first cleaning gas, and N2NO or N2O is a second cleaning gas. The flow rate of C is about 100sccm4F8With O at a flow rate of about 400sccm2Into the process chamber 10. When the second cleaning gas is not used, the cleaning speed is about 232.9 nm/min, and the DRE and MMTCE are 99% and 6.15 × 10 respectively-11。
When using N2The fastest cleaning speed is that N with 0.15 is added2C of (A)4F8/O2And 333.6 nm/min. When NO is used, the fastest cleaning rate is C with 0.15 added NO4F8/O2And 314.5 nm/min. When using N2O, the fastest cleaning speed is N added with 0.152C of O4F8/O2And 307.5 nm/min.
The DRE is 99% regardless of whether or not the second cleaning gas is added.
Will N2NO and N2Adding a second cleaning gas such as O to C4F8/O2The MMTCE value will be decreased. The MMTCE value is lowest when the ratio of the second cleaning gas to the first cleaning gas is 0.15 and decreases to 25% to 40% when the second cleaning gas is not added.
And (3) comparison:
to compare the effects of the embodiments of the present invention, NF was therefore used under the same conditions and equipment as those of the first embodiment3Another cleaning process is performed as a cleaning gas. Simultaneously, argon (Ar) was added to NF3。NF3At a flow rate of 20sccm and added to the NF3The flow rate of Ar of (2) is varied with time.
NF with added Ar3The cleaning speed can be increased at the beginning, and the fastest cleaning speed is NF with Ar added in a proportion of 0.53310 nm/min. In addition, the differences in cleaning speed between the center of the substrate holder, the sidewall of the processing chamber, and the front wall of the processing chamber are less than 10%, which means that the cleaning speed is uniform at different positions.
The DRE value was over 99% regardless of the addition of Ar, thus representing all NF3The gases have all decomposed.
The MMTCE value was 0.5X 10 regardless of the addition of Ar-10. In addition, the cleaning speed for silicon nitride is about 10.0 × 10 when normalized to an MMTCE value of 1,000 nm/min-10To 12.5X 10-10Within the range of (a).
As described above, the cleaning method of the present invention is free from generation of gas causing an increase in the temperature of the earth after the cleaning process, so that the influence on the increase in the temperature of the earth can be reduced.
The cleaning method of the present invention can increase the cleaning speed to improve the efficiency and uniformly clean the processing chamber.
In addition, the invention uses cheap cleaning gas to replace NF3Therefore, the manufacturing cost of the semiconductor device can be greatly reduced.
The above description is for the purpose of convenience only and is not intended to limit the invention to the particular embodiments described herein. All changes that come within the meaning and range of equivalency of the claims are to be embraced within their scope.

Claims (13)

1. A method of cleaning a manufacturing apparatus of a semiconductor device, comprising the steps of:
a gas supply step of supplying a first cleaning gas and a second cleaning gas into a processing chamber and forming the first and second cleaning gases into a mixed gas, wherein the first cleaning gas contains a carbon fluoride gas and oxygen gas, and the second cleaning gas contains nitrogen gas;
an activation step of activating a mixed gas formed by the first and second cleaning gases by a high frequency energy; and
an exhaust step for removing the residue and residual gas left after the activated mixed gas cleaning.
2. The method for cleaning manufacturing equipment of a semiconductor device according to claim 1, wherein the carbon fluoride gas is C3F8、C4F8And C4F8One of O.
3. The method of claim 1, wherein the second cleaning gas comprises N2、N2One of O and NO.
4. The method for cleaning manufacturing equipment of a semiconductor device according to claim 1, wherein a flow ratio of the carbon fluoride gas to the oxygen gas is in a range of 0.1 to 0.5.
5. The method for cleaning the manufacturing equipment of the semiconductor device according to claim 1, wherein a flow ratio of the second cleaning gas to the first cleaning gas is in a range of 0.01 to 0.5.
6. The method of claim 1, wherein a mixture of the first and second cleaning gases is activated by a plasma generator outside the processing chamber.
7. The method according to claim 1, wherein the first and second cleaning gases form a mixture sufficient to clean silicon, silicon nitride and silicon oxide remaining in the processing chamber.
8. A method of cleaning a manufacturing apparatus of a semiconductor device, comprising the steps of:
a step of activating a first cleaning gas by high frequency energy, wherein the first cleaning gas comprises carbon fluoride gas and oxygen gas;
a step of activating a second cleaning gas by a high frequency energy, wherein the second cleaning gas contains nitrogen;
a step of mixing the activated first and second cleaning gases to form a mixed gas of the first and second cleaning gases; and
an exhaust step for removing the residue and residual gas left after the mixed gas cleaning.
9. Themethod for cleaning manufacturing equipment of a semiconductor device according to claim 8, wherein the carbon fluoride gas is C3F8、C4F8And C4F8One of O.
10. The method of claim 8, wherein the second cleaning gas comprises N2、N2One of O and NO.
11. The method for cleaning manufacturing equipment of a semiconductor device according to claim 8, wherein a flow ratio of the carbon fluoride gas to the oxygen gas is in a range of 0.1 to 0.5.
12. The method for cleaning the manufacturing equipment of a semiconductor device according to claim 8, wherein a flow ratio of the second cleaning gas to the first cleaning gas is in a range of 0.01 to 0.5.
13. The method according to claim 8, wherein the first and second cleaning gases form a mixture sufficient to clean silicon, silicon nitride and silicon oxide remaining in the processing chamber.
CNA2004100004672A 2003-01-29 2004-01-29 Cleaning method for mfg. appts. of semiconductor device Pending CN1519889A (en)

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