CN1514477A - 使用无氮介电蚀刻停止层的半导体元件及其制程 - Google Patents
使用无氮介电蚀刻停止层的半导体元件及其制程 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 189
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003989 dielectric material Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 44
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 40
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 18
- 239000001569 carbon dioxide Substances 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 17
- 239000001307 helium Substances 0.000 claims description 15
- 229910052734 helium Inorganic materials 0.000 claims description 15
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 15
- SVQWJBABQVRZDN-UHFFFAOYSA-N C.C[SiH](C)C Chemical compound C.C[SiH](C)C SVQWJBABQVRZDN-UHFFFAOYSA-N 0.000 claims description 14
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 12
- 229920002472 Starch Polymers 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 11
- 235000019698 starch Nutrition 0.000 claims description 11
- 239000008107 starch Substances 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 14
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 179
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 239000004020 conductor Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000013508 migration Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000007848 Bronsted acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
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Abstract
本发明是关于一种使用无氮介电蚀刻停止层的半导体元件及其制程,其制程步骤包括:提供一基底;依序形成一第一蚀刻停止层及一第二蚀刻停止层于上述基底上,其中上述第二蚀刻停止层是为一无氮介电材料的停止层,而此第一蚀刻停止层是为碳化硅(SiC)层;形成一介电层于该第二蚀刻停止层上;依序定义上述介电层、第二蚀刻停止层以及第一蚀刻停止层以构成至少一开口于上述基底上,并露出开口内的基底;以及形成一导电层于上述开口内。
Description
技术领域
本发明是有关于一种半导体元件及其制程,特别是有关于一种使用无氮介电蚀刻停止层(N-free dielectric etching stop layer)的半导体元件及其制程。
背景技术
在半导体元件的制作过程中,是于后段半导体制程(back end of theline;BEOL)中利用金属导线结构以连结先前已制备于晶圆上的各式元件,并形成对外连结线路而完成整体半导体元件的制程。而随着半导体元件积集度的提升,铜金属搭配镶嵌式(damascene)制程的内联机结构可谓为当今后段制程中金属导线连结技术的主流。
而上述的镶嵌式(damascene)内联机结构,更可细分为单镶嵌(damascene)及双镶嵌(dual damascene)两种,以双镶嵌制程为例,是于半导体基底的介电层上,先行制作出具有介层洞(via hole)与内联机图案沟槽(trench),接着再以导电金属材料填满介层洞和内联机图案沟槽,配合以化学机械研磨制程移除介电层上方多余的金属后,则同时形成出金属接触插塞(plug)与金属内联机结构,达到简化制程步骤的效果。
而双镶嵌制程亦可细分为两类,一种是先形成介层洞开口后再形成导线沟槽开口,另一种则是先形成导线沟槽开口后再形成介层洞开口。
以下以图1A至图1F说明习知的一种先形成介层洞开口后再形成导线沟槽开口的双镶嵌结构的制造方法。
如图1A所示,在已形成既定的金属内联机结构102,例如铜或铝的半导体基底100上,先形成第一氮化硅层104,接着依序第一介电层106,接着形成一第二氮化硅层108,接着再形成一第二介电层110。其中上述第一氮化硅层104与第二氮化硅层108是作为蚀刻停止层之用。
接着,如图1B所示,在介电层110覆盖光阻层112,并进行微影蚀刻制程,在介电层108上对应内联机结构102的区域,形成介层洞开口114。接着以光阻层112为幕罩,继续蚀刻第二氮化硅层108及介电层106,而在去除光阻层110后,则于介电层间形成介层洞开口114,并露出其内的第一氮化硅层104,如图1C所示。
接着如图1D所示,在介电层110上覆盖一光阻层116,并利用微影制程在光阻层116上定义出导线沟槽图案118。部分的光阻材料会残留于介层洞114中,形成光阻插塞116a。
接着以光阻层116的沟槽图案为幕罩,蚀刻介电层110至作为蚀刻停止层的第二氮化硅层108为止,以形成导线沟槽118。
最后则去除导线沟槽中的第二氮化硅层108以及第一氮化硅层104,如图1F所示。于填入金属导电材料后,去除多余的导电材料后,则形成金属接触插塞与金属内联机结构120。
在此,蚀刻停止层(在此为第一氮化硅层104与第二氮化硅层108)的作用是作为防止上述金属材料于内部扩散的阻障层,此外,亦提供了于上述介电层内定义沟槽及介层洞结构时的蚀刻停止效果(因两者间构成材质不同,具有较佳的蚀刻选择比),可得到较佳的定义后沟槽及介层洞结构。
然而,由于定义沟槽图案时的光阻材质会填入之前形成的介层洞开口内(如光阻插塞116a),并于后续制程中与开口中的蚀刻停止层(在此为第一氮化硅层104与第二氮化硅层108)构成材料中所逸出(out-gassing)的氮原子(N)及环境中水气反应,进而生成碱性物质并中和光阻材质中的质子酸,而于显影后,产生如习知的光阻图案的底脚(footing)或底切(undercut)等变形情形(未显示),并进而影响转移后的介层洞或沟槽的外型,造成介层洞或沟槽毒化情形(via poisoning or trenchpoisoning)。
且于后续导电金属材质的填入后,由于上述原因易容易于双镶嵌图案中形成金属导线的不规则形状。此外,上述原因也会造成电流于导线和介层洞插塞流动的障碍,而形成电子迁移孔洞,使得产品可靠度下降。这些问题,均会严重影响内联机(由多层导线和介层窗插塞所构成)的品质。
而应用含氮介电材料(如氮化硅或氮氧化硅)于镶嵌式制程中的作为蚀刻停止层具有另一问题,由于含氮介电材料的介电常数偏高(氮化硅Si3N4约为7;氮氧化硅SiON约为5.2),亦会产生如寄生电容的问题,而较不适于当今以铜金属作为导电层材质及搭配低介电常数介电材料(low-k dielectric)的主流多重内联机结构上的应用。
发明内容
本发明的主要目的是提供了一种使用无氮介电蚀刻停止层的半导体元件及形成此具有无氮介电蚀刻停止层的半导体元件制程,适合应用于一般半导体制程或当今主流的镶嵌制程。
本发明的无氮介电材料具有较低的介电常数,其所形成的蚀刻停止层与邻近的介电层(如低介电常数材料的介电层)的组合将提供如时依性介电崩溃(time dependence dielectric breakdown;TDDB)、电致变迁(electro-migration;EM)及应力变迁(stress migration;SM)等电性上良好的表现,而采用本发明的无氮介电材料作为蚀刻停止层具有减低导电构件间的漏电流,进而提升整体元件电性表现的效果。
为达上述目的,本发明提供了一种使用无氮介电蚀刻停止层的半导体制程,其步骤包括:
提供一半导体基底;依序形成一第一蚀刻停止层及一第二蚀刻停止层于此半导体基底上,其中第二蚀刻停止层是为一无氮介电材料(N-freedielectric)的蚀刻停止层,而上述第一蚀刻停止层是为碳化硅(SiC)层;形成一介电层于第二蚀刻停止层上;依序定义介电层、第二蚀刻停止层以及第一蚀刻停止层以构成复数个开口于基底上,并露出开口内的半导体基底;以及形成一导电层于该等开口内。
再者,利用上述制程所形成的使用无氮介电蚀刻停止层的半导体元件,其结构包括:
一半导体基底,其上依序堆栈有一第一蚀刻停止层、一第二蚀刻停止层以及一介电层,其中第一蚀刻停止层是为碳化硅(SiC)层;以及至少一导电层,设置于此些膜层内并接触该半导体基底,以构成一导电构件。而此导电构件可为一接触插栓或一导线。
此外,于上述半导体制程及半导体元件内,第一蚀刻停止层是借由电浆加强型化学气相沉积法(PECVD)所形成,且为一无氮介电材料(N-freedielectric)的蚀刻停止层,而形成该第一蚀刻停止层的制程气体中实质上只使用三甲基硅甲烷(trimethylsilane)气体而不包含有惰性气体。
再者,于上述半导体制程及半导体元件中形成碳化硅材质的第一蚀刻停止层的操作条件如下:
于工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于50-500瓦特(Watts)高频射频功率(HFRF power);气体流量介于100-1500每立方公分/每分钟(standard cubic centimeter per minute;SCCM)的三甲基硅甲烷(trimethylsilane;3MS)为制程气体,且无使用其它惰性气体制程气体(如氦气He);介于0.5-2托(Torr.)反应压力;以及介于300-400℃的反应温度。
此外,上述半导体制程及半导体元件内第二蚀刻停止层较佳为一碳氧化硅(SiOC)材质,而本发明中亦揭露了借由电浆加强型化学气相沉积法(PECVD)形成此碳氧化硅(SiOC)材质的第二蚀刻停止层的两较佳操作条件,其操作条件分别如下:
操作条件之一为:
于工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于300-500瓦特(Watts)高频射频功率(HFRF power)并搭配工作频率约为900千赫兹(KHz)的低频射频电源(high frequency radio frequence power supply)所提供的介于0-200瓦特(Watts)低频射频功率(HFRF power);以三甲基硅甲烷(trimethylsilane;3MS)与二氧化碳(CO2)为制程气体,其中三甲基硅甲烷气体流量介于100-300每立方公分/每分钟(SCCM),而二氧化碳气体流量介于350-1050每立方公分/每分钟(SCCM);介于0.5-2.5托(Torr.)反应压力;以及介于300-400℃的反应温度。
操作条件之二为:
以工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于300-500瓦特(Watts)高频射频功率(HFRF power),并搭配工作频率约为900千赫兹(KHz)的低频射频电源(high frequency radio frequence power supply)所提供的介于0-200瓦特(Watts)低频射频功率(HFRF power);以三甲基硅甲烷(trimethylsilane;3MS)、二氧化碳(CO2)与氦气(He)为制程气体,其中三甲基硅甲烷气体流量介于100-300每立方公分/每分钟(SCCM),而二氧化碳气体流量介于350-1050每立方公分/每分钟(SCCM),而氦气(He)气体流量介于400-1200每立方公分/每分钟(SCCM);介于2-5托(Torr.)的反应压力;以及介于300-400℃的反应温度。
再者,由上述由第一蚀刻停止层(碳化硅材质,k约为2.8)及第二蚀刻停止层(碳氧化硅材质,k约为4.2-4.5)所构成复合的蚀刻停止层,可提供而与邻近的介电层间(例如为碳氧化硅材质的低介电材料介电层)良好的蚀刻选择效果,除此之外其与邻近的介电层(如低介电常数材料的介电层)的组合亦提供了如时依性介电崩溃(time dependence dielectricbreakdown;TDDB)、电致变迁(electro-migration;EM)及应力变迁(stress migration;SM)等电性上良好的表现,故采用本发明的无氮介电材料的蚀刻停止层将可大幅减低金属结构间的漏电流,而提升整体元件的电性表现。
此外,本发明亦提供了另一种使用无氮介电蚀刻停止层的半导体制程,其步骤包括:
提供一半导体基底;形成一第一蚀刻停止层于上述半导体基底上,其中第一蚀刻停止层是为碳化硅(SiC)层;形成一介电层于上述第一蚀刻停止层上;依序定义介电层以及第一蚀刻停止层以构成复数个开口于该基底上,并露出该等开口内的基底;以及形成一导电层于该等开口内。
再者,利用上述制程所形成的使用无氮介电蚀刻停止层的半导体元件,其结构包括:
一半导体基底,其上依序堆栈有一第一蚀刻停止层以及一介电层,其中第一蚀刻停止层是为碳化硅(SiC)层;以及至少一导电层,设置于此些膜层内并接触半导体基底,以构成一导电构件。而此导电构件可为一接触插栓或一导线。
此外,于上述半导体制程及半导体元件内,第一蚀刻停止层是借由电浆加强型化学气相沉积法(PECVD)所形成,且为一无氮介电材料(N-freedielectric)的蚀刻停止层,而形成该第一蚀刻停止层的制程气体中实质上只使用三甲基硅甲烷(trimethylsilane)气体而不包含有惰性气体。
再者,于上述半导体制程及半导体元件中形成碳化硅材质的第一蚀刻停止层的操作条件如下:
于工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于100-1000瓦特(Watts)高频射频功率(HFRF power);气体流量介于150-1500每立方公分/每分钟(standard cubic centimeter per minute;SCCM)的三甲基硅甲烷(trimethylsilane;3MS)为制程气体,且无使用其它惰性气体制程气体(如氦气He);介于0.5-2托(Torr.)反应压力;以及介于300-400℃的反应温度。
再者,由于上述第一蚀刻停止层是完全由碳化硅材质所构成,可提供与邻近的介电层间(如为碳氧化硅材质的低介电材料介电层)更为良好的蚀刻选择效果,除此之外其具有更为低的介电常数(k约为2.8),与邻近的介电层(如碳氧化硅材质低介电常数材料的介电层)的组合亦提供了如时依性介电崩溃(time dependence dielectric breakdown;TDDB)、电致变迁(electro-migration;EM)及应力变迁(stress migration;SM)等电性上良好的表现,故采用本发明的无氮介电材料的蚀刻停止层将可大幅减低半导体结构间的漏电流,而提升整体元件的电性表现。
附图说明
图1A至图1F是说明习知的一种先形成介层洞开口后再形成导线沟槽开口的双镶嵌结构的制造方法;
图2A至图2D是说明本发明第一实施例中所使用的无氮介电蚀刻停止层的半导体制程;
图3A至图3C是说明本发明第二实施例中所使用的无氮介电蚀刻停止层的半导体制程。
符号说明:
100、200、300-半导体基底
102-内联机结构
104-第一氮化硅层
106-第一介电层
108-第二氮化硅层
110-第二介电层
112、116-光阻层
114-介层洞开口
116a-光阻插塞
120-金属接触插塞与金属内联机结构
202、206、302-沉积程序
ESL-双层蚀刻停止层
204、302-第一蚀刻停止层
208-第二蚀刻停止层
210、306-介电层
212、308-开口
214、310-导电层
具体实施方式
为了让本发明的上述目的、特征、及优点能更明显易懂,以下配合所附图式,作详细说明如下:
第一实施例:
以下以图2A至图2D说明本发明的使用无氮介电蚀刻停止层的半导体制程。
首先,如图2A所示,提供一半导体基底200,例如为一硅基底,其上形成有元件及内联机,为简化图示,此处仅绘示出一平整基底,借由一沉积程序202于半导体基底200上先形成第一蚀刻停止层204,其厚度介于10-80埃()。而形成此第一蚀刻停止层204的沉积程序202例如借由电浆加强型化学气相沉积法(plasma enhanced chemical vapordeposition;PECVD)所完成,且实质上只使用三甲基硅甲烷(trimethylsilane;3MS)为制程气体,无使用其它如氮气、氦气等惰性气体所形成,为一碳化硅(SiC)材质的膜层,其介电常数约为2.8。
而上述沉积程序202的较佳操作条件如下:
(a):以工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于50-500瓦特(Watts)高频射频功率(HFRF power),较佳的功率约为50-200瓦特(Watts);
(b):以气体流量介于100-1500每立方公分/每分钟(standard cubiccentimeter per minute;SCCM)的三甲基硅甲烷(trimethylsilane;3MS)为制程气体,较佳的制程气体流量约为150每立方公分/每分钟(SCCM),无使用其它惰性气体制程气体(如氦气He),可形成结构较致密的碳化硅(SiC)薄膜;
(c):反应压力介于0.5-2托(Torr.),较佳的反应压力约为1.7托(Torr.),反应压力较低具有减低表面缺陷(surface defects)的功效;以及
(d):反应温度介于300-400℃,较佳的反应温度约为350℃。
接着,如图2B所示,借由一沉积程序206于第一蚀刻停止层204上形成一第二蚀刻停止层208,其厚度介于500-700埃()。而形成此第二蚀刻停止层208的沉积程序206例如借由电浆加强型化学气相沉积法(plasma enhanced chemical vapor deposition;PECVD)所形成,其材质较佳为碳氧化硅(SiOC)材质的膜层,具有约为4.2-4.5的介电常数。
而上述沉积程序206中利用电浆加强型化学气相沉积法(PECVD)所形成第二蚀刻停止层208的碳氧化硅(SiOC)材料,在此本发明则提供了沉积程序206中两种较佳的操作条件,于操作条件一中是采用两种制程气体以形成此碳氧化硅材料,而于操作条件二中是采用三种制程气体以形成此碳氧化硅材料,以上的操作条件将个别地简述如下:
操作条件一:
(a):以工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于300-500瓦特(Watts)高频射频功率(HFRF power),较佳的高频射频功率约为400瓦特(Watts)并搭配工作频率约为900千赫兹(KHz)的低频射频电源(highfrequency radio frequence power supply)所提供的介于0-200瓦特(Watts)低频射频功率(HFRF power),而较佳的低频射频功率约为50-200瓦特(Watts);
(b):以三甲基硅甲烷(trimethylsilane;3MS)与二氧化碳(CO2)为制程气体,其中三甲基硅甲烷气体流量介于100-300每立方公分/每分钟(SCCM),较佳的三甲基硅甲烷气体流量约为100每立方公分/每分钟(SCCM),而二氧化碳气体流量介于350-1050每立方公分/每分钟(SCCM),较佳的二氧化碳气体流量约为350每立方公分/每分钟(SCCM);
(c):反应压力介于0.5-2.5托(Torr.),较佳的反应压力介于为1.5-1.9托(Torr.),反应压力较低具有减低表面缺陷(surface defects)的功效;以及
(d):反应温度介于300-400℃,较佳的反应温度约为350℃。
操作条件二:
(a):以工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于300-500瓦特(Watts)高频射频功率(HFRF power),较佳的高频射频功率约为400瓦特(Watts)并搭配工作频率约为900千赫兹(KHz)的低频射频电源(highfrequency radio frequence power supply)所提供的介于0-200瓦特(Watts)低频射频功率(HFRF power),而较佳的低频射频功率约大约50-200瓦特(Watts);
(b):以三甲基硅甲烷(trimethylsilane;3MS)、二氧化碳(CO2)与氦气(He)为制程气体,其中三甲基硅甲烷气体流量介于100-300每立方公分/每分钟(SCCM),较佳的三甲基硅甲烷气体流量约为100每立方公分/每分钟(SCCM),而二氧化碳气体流量介于350-1050每立方公分/每分钟(SCCM),较佳的二氧化碳气体流量约为350每立方公分/每分钟(SCCM),而氦气(He)气体流量介于400-1200每立方公分/每分钟(SCCM),较佳的氦气气体流量约为400每立方公分/每分钟(SCCM);
(c):反应压力介于2-5托(Torr.),较佳的反应压力介于为3-4托(Torr.),反应压力较低具有减低表面缺陷(surface defects)的功效;
(d):反应温度介于300-400℃,较佳的反应温度约为350℃。
在此,本发明的上述第一蚀刻停止层204与第二蚀刻停止层208可视为一复合的双层蚀刻停止层ESL,其中第二蚀刻停止层208较第一蚀刻停止层204为厚且此双层停止层ESL具有一介于500-700埃()的整体厚度,而其整体的介电常数也可更减低为介于2.8-4.2间。
且于先前形成的第一蚀刻停止层204(碳化硅材质)的沉积过程中,由与所使用的反应气体(在此为三甲基硅甲烷)除了不含氮原子(N)外,亦不含有氧原子(O),故于沉积过程中对于位于其下方先前存在于半导体基底200内的暨有元件或内联机的裸露表面(在此未显示)不会有氧化其表面的顾虑,可维持元件或内导线表面结构的完整性而不对其电性表现造成影响,并于此平整的半导体基底200上借由此第一蚀刻停止层204及厚度较第一蚀刻停止层204为厚的第二蚀刻停止层208(碳氧化硅材质)以构成一复合的蚀刻停止层ESL。
如图2C所示,接着形成介电层210于上述第二蚀刻停止层208,例如为利用化学气相沉积(CVD)方式沉积的掺氟二氧化硅(fluorinatedSiO2,FSG)或应用材料公司的黑钻石薄膜或低介电常数的碳氧化硅材料(SiOC low-k)以作其材质。接着进行一般微影蚀刻制程(未显示),在介电层210上对应于位于半导体基底200内的元件或内联机的区域(未显示),依序定义介电层210、第二蚀刻停止层208及第一蚀刻停止层204以构成复数个开口212,并露出开口212内的基底表面。
接着如图2D所示,于开口212内填入如铜、铝或钨等导电材料后,并去除多余的导电材料后(例如利用一化学机械研磨程序),以形成一导电层214于开口212内。而上述导电层214的功用,除了可作为连接元件的接触插栓构件外,亦可依实际需要调整开口212的线宽,以于开口212内形成应用为导线构件的导电层214。
如此,借由上述制程所形成的半导体元件,其结构如图2D所示,包括:
半导体基底200,其上依序堆栈有第一蚀刻停止层204、第二蚀刻停止层208以及介电层210,其中第一蚀刻停止层是为碳化硅(SiC)层;以及至少一导电层214(在此显示为两个),设置于上述膜层内并接触半导体基底200,以构成一导电构件,而此导电构件可为一接触插栓或一导线结构。
第二实施例:
以下以图3A至图3C说明本发明的另一使用无氮介电蚀刻停止层的半导体制程。
首先,如图3A所示,提供一半导体基底300,例如为一硅基底,其上形成有元件及内联机,为简化图示,此处仅绘示出一平整基底,借由一沉积程序302于半导体基底300上先形成第一蚀刻停止层304,其厚度介于400-700埃()。而形成此第一蚀刻停止层304的沉积程序302例如借由电浆加强型化学气相沉积法(plasma enhanced chemical vapordeposition;PECVD)所完成,且实质上只使用三甲基硅甲烷(trimethylsilane;3MS)为制程气体,无使用其它如氮气、氦气等惰性气体所形成,为一碳化硅(SiC)材质的膜层,其介电常数约为2.8。
而上述沉积程序302的较佳操作条件如下:
(a):以工作频率约为13.56百万赫兹(MHz)的高频射频电源(highfrequency radio frequence power supply)所提供的介于100-1000瓦特(Watts)高频射频功率(HFRF power),较佳的功率约为100瓦特(Watts);
(b):以气体流量介于150-1500每立方公分/每分钟(standard cubiccentimeter per minute;SCCM)的三甲基硅甲烷(trimethylsilane;3MS)为制程气体,无使用其它如氮气、氦气等惰性气体所形成,较佳的气体流量约为150每立方公分/每分钟(SCCM),可形成结构较致密的碳化硅(SiC)薄膜;
(c):反应压力介于0.5-2托(Torr.),较佳的反应压力约为1.7托(Torr.),反应压力较低具有减低表面缺陷(surface defects)的功效;
(d):反应温度介于300-400℃,较佳的反应温度约为350℃。
于此第一蚀刻停止层304(碳化硅材质)的沉积过程中,由与所使用的制程气体(在此为三甲基硅甲烷)除了不含氮原子(N)外,亦不含有氧原子(O),故于沉积过程中对于位于其下方先前存在于半导体基底300内的暨有元件或内联机的裸露表面(在此未显示)不会有氧化其表面的顾虑,可维持元件或内导线表面结构的完整性而不对其电性表现造成影响。
如图3B所示,接着形成介电层306于上述第一蚀刻停止层304上,例如为利用化学气相沉积(CVD)方式沉积的掺氟二氧化硅(fluorinatedSiO2,FSG)或应用材料公司的黑钻石薄膜或低介电常数的碳氧化硅材料(SiOC low-k)以作为其材质。接着进行一般微影蚀刻制程,在介电层306上对应于位于半导体基底300内的元件或内联机的区域(未显示),依序定义介电层306及第一蚀刻停止层304以构成复数个开口308,并露出开口308内的半导体基底表面。
接着如图3C所示,于开口308内填入如铜、铝或钨等导电金属材料后,并去除多余的导电材料后(例如利用化学气相沉积法),以形成一导电层310于开口308内。而上述导电层310的功用,除了可作为连接元件的接触插栓构件外,亦可依实际需要调整开口308的线宽,以于开口308内形成应用为导线构件的导电层310。
如此,借由上述制程所形成的半导体元件,其结构如图3C所示,包括:
半导体基底300,其上依序堆栈有第一蚀刻停止层302以及介电层306,其中第一蚀刻停止层是为碳化硅(SiC)层;以及至少一导电层310(在此显示为两个),设置于上述膜层内并接触半导体基底300,以构成一导电构件,而此导电构件可为一接触插栓或一导线结构。
电性评估:
在此以第一及第二实施例中所揭露的具有本发明的无氮介电蚀刻停止层的半导体元件(如图2D及图3C所示)为电性评估对象,在此导电层(214及310)视为一金属导线结构,而两导线间的间距则与其导线线宽相同(约为0.12μm),所使用的介电层材质为介电常数约为黑钻石薄膜(black diamond),其厚度约为2000-7000埃,而金属导线的材质为铜金属,评估改变所使用的蚀刻停止层材质(整体厚度约为550埃),其整体(蚀刻停止层与邻近的介电层)电性表现的变化,其评估项目则分为以下3项:
(1):时依性介电崩溃(time dependence dielectric breakdown;TDDB);
(2):电致变迁(electro-migration;EM);
(3):崩溃电压(breakdown voltage;Vbd)。
表一:评估结果
蚀刻停止层组成结构 | TDDB@3.6V.125℃(years) | EM@3.6V,125℃(A/cm2) | Vbd@1mA/cm2(MV/cm) |
SiC+反应条件1的SiOC(w/o He) | 4.1*107 | 7*105 | -4.4 |
SiC+反应条件2的SiOC(w/He) | 9.7*109 | 1*106 | -3.3 |
SiC only | N/A | N/A | -5 |
业界标准 | 10 | 5.5*105 |
本发明的三种蚀刻停止层结构,其实际应用于半导体制程中的评估结果,皆能符合业界标准,且于如TDDB及EM项目中,更远优于当今业界的标准,本发明的无氮介电材料其应用于半导体制程中以作为蚀刻停止层之用,可符合深次微米世代的半导体制程的要求。
本发明的实施例是以一单镶嵌式半导体制程作为说明,任何熟习此技艺者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰,将本发明的无氮介电材料蚀刻停止层更应用于双镶嵌半导体制程或一般的半导体制程,故不在此加以限定本发明的无氮介电材料蚀刻停止层的使用时机。
Claims (33)
1.一种使用无氮介电蚀刻停止层的半导体制程,包括下列步骤:
提供一半导体基底;
依序形成一第一蚀刻停止层及一第二蚀刻停止层于该半导体基底上,其中该第二蚀刻停止层是为一无氮介电材料(N-free dielectric)的蚀刻停止层,而该第一蚀刻停止层是为碳化硅(SiC)层;
形成一介电层于该第二蚀刻停止层上;
依序定义该介电层、该第二蚀刻停止层以及该第一蚀刻停止层以构成复数个开口于该基底上,并露出该开口内的半导体基底;
形成一导电层于该开口内。
2.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是借由电浆加强型化学气相沉积法(PECVD)所形成。
3.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是为一无氮介电材料(N-free dielectric)的蚀刻停止层。
4.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中形成该第一蚀刻停止层的制程气体中实质上只使用三甲基硅甲烷(trimethylsilane)气体而不包含有惰性气体。
5.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是于50-500瓦特(Watts)高频射频功率(HFRFpower)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz)。
6.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是于0.5-2托(Torr.)的反应压力下、300-400℃的反应温度下以及100-1500每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下所形成。
7.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是为一碳氧化硅(SiOC)材质,其形成方法是借由电浆加强型化学气相沉积法(PECVD),使用三甲基硅甲烷(trimethylsilane)与二氧化碳(CO2)为制程气体所形成。
8.根据权利要求7所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是于300-500瓦特(Watts)高频射频功率(HFRFpower)下及0-200瓦特(Watts)低频射频功率(LFRF power)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz),而该低频射频功率的工作频率为900千赫兹(KHz)。
9.根据权利要求7所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是于0.5-2.5托(Torr.)的反应压力下、300-400℃的反应温度下以及100-300每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下及于350-1050每立方公分/每分钟(SCCM)的二氧化碳气体流量下所形成。
10.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是为一碳氧化硅(SiOC)材质,其形成方法是借由电浆加强型化学气相沉积法(PECVD),使用三甲基硅甲烷(trimethylsilane)、二氧化碳(CO2)及氦气(He)为制程气体所形成。
11.根据权利要求10所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是于300-500瓦特(Watts)高频射频功率(HFRFpower)下及0-200瓦特(Watts)低频射频功率(LFRF power)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz),而该低频射频功率的工作频率为900千赫兹(KHz)。
12.根据权利要求1所述的使用无氮介电蚀刻停止层的半导体制程,其中该第二蚀刻停止层是于2-5托(Torr.)的反应压力下、300-400℃的反应温度下、100-300每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下、350-1050每立方公分/每分钟(SCCM)的二氧化碳气体流量下及400-1200每立方公分/每分钟(SCCM)的氦气气体流量下所形成。
13.一种使用无氮介电蚀刻停止层的半导体制程,包括下列步骤:
提供一半导体基底;
形成一第一蚀刻停止层于该半导体基底上,而该第一蚀刻停止层是为碳化硅(SiC)层;
形成一介电层于该第一蚀刻停止层上;
依序定义该介电层以及该第一蚀刻停止层以构成复数个开口于该基底上,并露出该开口内的基底;
形成一导电层于该开口内。
14.根据权利要求13所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是为一无氮材料(N-free)的蚀刻停止层。
15.根据权利要求13所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是借由电浆加强型化学气相沉积法(PECVD)所形成。
16.根据权利要求13所述的使用无氮介电蚀刻停止层的半导体制程,其中形成该第一蚀刻停止层的制程气体中实质上只使用三甲基硅甲烷(trimethylsilane)气体而不包含有惰性气体。
17.根据权利要求13所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是于100-1000瓦特(Watts)高频射频功率(HFRF power)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz)。
18.根据权利要求13所述的使用无氮介电蚀刻停止层的半导体制程,其中该第一蚀刻停止层是于0.5-2托(Torr.)的反应压力下、300-400℃的反应温度下及150-1500每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下所形成。
19.一种使用无氮介电蚀刻停止层的半导体元件,其特征在于所述半导体元件包括:
一半导体基底,其上依序堆栈有一第一蚀刻停止层及一介电层,其特征在于:第一蚀刻停止层是为碳化硅(SiC)层;
至少一导电层,设置于该膜层内并接触该半导体基底,以构成一导电构件。
20.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第一蚀刻停止层是为一无氮材料(N-free)的蚀刻停止层。
21.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第一蚀刻停止层是借由电浆加强型化学气相沉积法(PECVD)所形成。
22.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:形成该第一蚀刻停止层的制程气体中实质上只使用三甲基硅甲烷(trimethylsilane)气体而不包含有惰性气体。
23.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第一蚀刻停止层是于100-1000瓦特(Watts)高频射频功率(HFRF power)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz)。
24.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第一蚀刻停止层是于0.5-2托(Torr.)的反应压力下、300-400℃的反应温度下以及150-1500每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下所形成。
25.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该导电构件为接触插栓或导线。
26.根据权利要求19所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:于该第一蚀刻停止层与该介电层间更包括一第二蚀刻停止层。
27.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是为一碳氧化硅(SiOC)材质,是借由电浆加强型化学气相沉积法(PECVD),使用三甲基硅甲烷(trimethylsilane)与二氧化碳(CO2)为制程气体所形成。
28.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是于300-500瓦特(Watts)高频射频功率(HFRF power)下及0-200瓦特(Watts)低频射频功率(LFRF power)下所形成,且该高频射频功率的工作频率为13.56百万赫兹(MHz),而该低频射频功率的工作频率为900千赫兹(KHz)。
29.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是于0.5-2.5托(Torr.)的反应压力下、300-400℃的反应温度下、100-300每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下以及于350-1050每立方公分/每分钟(SCCM)的二氧化碳气体流量下所形成。
30.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是为一碳氧化硅(SiOC)材质,其形成方法是借由电浆加强型化学气相沉积法(PECVD),使用三甲基硅甲烷(trimethylsilane)、二氧化碳(CO2)及氦气(He)为制程气体所形成。
31.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是于300-500瓦特(Watts)高频射频功率(HFRF power)下及0-200瓦特(Watts)低频射频功率(LFRF power)下所形成,其中该高频射频功率的工作频率为13.56百万赫兹(MHz),而该低频射频功率的工作频率为900千赫兹(KHz)。
32.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该第二蚀刻停止层是于2-5托(Torr.)的反应压力下、300-400℃的反应温度下、100-300每立方公分/每分钟(SCCM)的三甲基硅甲烷(trimethylsilane)气体流量下、350-1050每立方公分/每分钟(SCCM)的二氧化碳气体流量下以及400-1200每立方公分/每分钟(SCCM)的氦气气体流量下所形成。
33.根据权利要求26所述的使用无氮介电蚀刻停止层的半导体元件,其特征在于:该导电构件为接触插栓或导线。
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US10/335,589 US20040124420A1 (en) | 2002-12-31 | 2002-12-31 | Etch stop layer |
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US7375040B2 (en) | 2008-05-20 |
CN1245750C (zh) | 2006-03-15 |
SG128451A1 (en) | 2007-01-30 |
US20040124420A1 (en) | 2004-07-01 |
US20060110938A1 (en) | 2006-05-25 |
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