CN1508611A - 抑制图像采集中漏电流的方法 - Google Patents
抑制图像采集中漏电流的方法 Download PDFInfo
- Publication number
- CN1508611A CN1508611A CNA031577911A CN03157791A CN1508611A CN 1508611 A CN1508611 A CN 1508611A CN A031577911 A CNA031577911 A CN A031577911A CN 03157791 A CN03157791 A CN 03157791A CN 1508611 A CN1508611 A CN 1508611A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002254851 | 2002-08-30 | ||
JP2002254851A JP4342780B2 (ja) | 2002-08-30 | 2002-08-30 | 表示装置及びその製造方法 |
JP2002281665A JP2004119719A (ja) | 2002-09-26 | 2002-09-26 | 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法 |
JP2002281665 | 2002-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1508611A true CN1508611A (zh) | 2004-06-30 |
CN100507684C CN100507684C (zh) | 2009-07-01 |
Family
ID=31497704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031577911A Expired - Lifetime CN100507684C (zh) | 2002-08-30 | 2003-08-29 | 光学传感器二极管 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7265740B2 (zh) |
EP (1) | EP1394859A3 (zh) |
KR (1) | KR100607619B1 (zh) |
CN (1) | CN100507684C (zh) |
SG (1) | SG110066A1 (zh) |
TW (1) | TWI235351B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101995994A (zh) * | 2009-08-19 | 2011-03-30 | 索尼公司 | 传感装置、驱动传感元件的方法以及电子单元 |
CN102110415A (zh) * | 2009-12-25 | 2011-06-29 | 索尼公司 | 驱动电路和显示设备 |
CN102427079A (zh) * | 2011-12-09 | 2012-04-25 | 上海中科高等研究院 | Cmos图像传感器 |
CN101903853B (zh) * | 2008-10-21 | 2013-08-14 | 株式会社日本显示器西 | 图像拾取装置、显示及图像拾取装置和电子装置 |
CN104424880A (zh) * | 2013-08-21 | 2015-03-18 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光显示装置、显示器及减少漏电流的方法 |
CN107104115A (zh) * | 2015-12-28 | 2017-08-29 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN108957883A (zh) * | 2018-07-20 | 2018-12-07 | 武汉华星光电技术有限公司 | 一种显示面板及显示设备 |
CN109785797A (zh) * | 2019-03-14 | 2019-05-21 | 电子科技大学 | 一种新型的amoled像素电路 |
CN112470279A (zh) * | 2018-07-30 | 2021-03-09 | 索尼半导体解决方案公司 | 固态摄像装置和电子设备 |
CN114497004A (zh) * | 2022-01-21 | 2022-05-13 | Nano科技(北京)有限公司 | 具有暗电流指示功能的光电二极管结构以及光电传感器 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7265740B2 (en) | 2002-08-30 | 2007-09-04 | Toshiba Matsushita Display Technology Co., Ltd. | Suppression of leakage current in image acquisition |
TW584953B (en) * | 2003-04-25 | 2004-04-21 | Toppoly Optoelectronics Corp | ESD protection device with thick poly film, electronic device and method for forming the same |
KR100669270B1 (ko) * | 2003-08-25 | 2007-01-16 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 표시 장치 및 광전 변환 소자 |
US7612818B2 (en) * | 2004-03-29 | 2009-11-03 | Toshiba Matsushita Display Technology Co., Ltd. | Input sensor containing display device and method for driving the same |
JP2006186266A (ja) * | 2004-12-28 | 2006-07-13 | Toshiba Matsushita Display Technology Co Ltd | 光電変換素子及びこれを用いた表示装置 |
JP4497366B2 (ja) * | 2005-02-04 | 2010-07-07 | 国立大学法人東北大学 | 光センサおよび固体撮像装置 |
GB2443204A (en) | 2006-10-04 | 2008-04-30 | Sharp Kk | Photosensor and ambient light sensor |
CN101611340B (zh) * | 2007-05-18 | 2011-08-03 | 夏普株式会社 | 显示装置 |
CN101600985B (zh) * | 2007-05-18 | 2011-02-02 | 夏普株式会社 | 显示装置 |
CN101611499B (zh) * | 2007-05-18 | 2011-06-22 | 夏普株式会社 | 显示装置 |
WO2009022577A1 (ja) * | 2007-08-10 | 2009-02-19 | Sharp Kabushiki Kaisha | 光センサおよびそれを備えた表示装置 |
JP2009065166A (ja) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサ及びその製造方法 |
TWI348770B (en) | 2007-09-28 | 2011-09-11 | Au Optronics Corp | Light sensor |
US20110122111A1 (en) * | 2008-06-03 | 2011-05-26 | Christopher Brown | Display device |
JP5275739B2 (ja) * | 2008-10-03 | 2013-08-28 | 株式会社ジャパンディスプレイウェスト | センサ素子およびその駆動方法 |
WO2010041489A1 (ja) * | 2008-10-09 | 2010-04-15 | シャープ株式会社 | フォトダイオード、フォトダイオードを備えた表示装置及びそれらの製造方法 |
WO2010047086A1 (ja) * | 2008-10-23 | 2010-04-29 | シャープ株式会社 | 半導体装置およびその製造方法ならびに表示装置 |
JP5157825B2 (ja) * | 2008-10-29 | 2013-03-06 | ソニー株式会社 | 有機elディスプレイの製造方法 |
JP5481127B2 (ja) * | 2009-08-19 | 2014-04-23 | 株式会社ジャパンディスプレイ | センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器 |
JP5721994B2 (ja) * | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
JP5512800B2 (ja) * | 2010-04-16 | 2014-06-04 | シャープ株式会社 | 半導体装置 |
JP2013130729A (ja) | 2011-12-21 | 2013-07-04 | Japan Display Central Co Ltd | 表示装置 |
TW201337871A (zh) * | 2012-03-01 | 2013-09-16 | Chunghwa Picture Tubes Ltd | 具影像擷取功能之顯示器裝置及其操作方法 |
JP5953242B2 (ja) | 2013-01-28 | 2016-07-20 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6085518B2 (ja) | 2013-05-09 | 2017-02-22 | 株式会社ジャパンディスプレイ | 表示装置 |
US9691797B2 (en) * | 2014-04-08 | 2017-06-27 | Sharp Kabushiki Kaisha | Display device |
Family Cites Families (18)
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DE3276091D1 (en) * | 1981-12-24 | 1987-05-21 | Nippon Denso Co | Semiconductor device including overvoltage protection diode |
GB2133893A (en) * | 1983-01-19 | 1984-08-01 | Bl Tech Ltd | Detecting leaks |
US4785186A (en) * | 1986-10-21 | 1988-11-15 | Xerox Corporation | Amorphous silicon ionizing particle detectors |
US5021694A (en) * | 1987-03-30 | 1991-06-04 | Nec Corporation | Circuit for driving a gated p-n-p-n device |
US5262649A (en) * | 1989-09-06 | 1993-11-16 | The Regents Of The University Of Michigan | Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation |
JPH06103745B2 (ja) * | 1989-10-06 | 1994-12-14 | 株式会社東芝 | 集積回路素子 |
JP2959682B2 (ja) | 1991-03-20 | 1999-10-06 | 日本電信電話株式会社 | フォトダイオード |
JP3191745B2 (ja) * | 1997-04-23 | 2001-07-23 | 日本電気株式会社 | 薄膜トランジスタ素子及びその製造方法 |
JPH1197705A (ja) * | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
JP4256544B2 (ja) * | 1998-08-25 | 2009-04-22 | シャープ株式会社 | 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路 |
KR100307397B1 (ko) * | 1999-06-14 | 2001-11-01 | 준 신 이 | 씨앗층으로 플루오르화칼슘 또는 산화세륨을 적용하여 미세결정 규소박막을 성장시킨 박막 트랜지스터의 제조방법 |
JP4112184B2 (ja) | 2000-01-31 | 2008-07-02 | 株式会社半導体エネルギー研究所 | エリアセンサ及び表示装置 |
US6747638B2 (en) | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
JP2001308460A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 窒化物半導体レーザ素子とその光ピックアップ装置 |
JP4703815B2 (ja) * | 2000-05-26 | 2011-06-15 | 株式会社半導体エネルギー研究所 | Mos型センサの駆動方法、及び撮像方法 |
JP4543560B2 (ja) | 2001-02-09 | 2010-09-15 | 日本電気株式会社 | 表示機能を内蔵した画像入力装置 |
JP4646095B2 (ja) * | 2001-04-19 | 2011-03-09 | シャープ株式会社 | 半導体発光装置およびその製造方法ならびに光学式情報記録再生装置 |
US7265740B2 (en) | 2002-08-30 | 2007-09-04 | Toshiba Matsushita Display Technology Co., Ltd. | Suppression of leakage current in image acquisition |
-
2003
- 2003-08-07 US US10/635,509 patent/US7265740B2/en active Active
- 2003-08-12 TW TW092122133A patent/TWI235351B/zh not_active IP Right Cessation
- 2003-08-19 SG SG200304845A patent/SG110066A1/en unknown
- 2003-08-21 EP EP03018663A patent/EP1394859A3/en not_active Withdrawn
- 2003-08-29 CN CNB031577911A patent/CN100507684C/zh not_active Expired - Lifetime
- 2003-08-29 KR KR1020030060158A patent/KR100607619B1/ko not_active IP Right Cessation
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101903853B (zh) * | 2008-10-21 | 2013-08-14 | 株式会社日本显示器西 | 图像拾取装置、显示及图像拾取装置和电子装置 |
CN101995994A (zh) * | 2009-08-19 | 2011-03-30 | 索尼公司 | 传感装置、驱动传感元件的方法以及电子单元 |
CN101995994B (zh) * | 2009-08-19 | 2013-07-24 | 株式会社日本显示器西 | 传感装置、驱动传感元件的方法以及电子单元 |
CN102110415A (zh) * | 2009-12-25 | 2011-06-29 | 索尼公司 | 驱动电路和显示设备 |
CN102427079A (zh) * | 2011-12-09 | 2012-04-25 | 上海中科高等研究院 | Cmos图像传感器 |
CN102427079B (zh) * | 2011-12-09 | 2014-01-08 | 中国科学院上海高等研究院 | Cmos图像传感器 |
CN104424880A (zh) * | 2013-08-21 | 2015-03-18 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光显示装置、显示器及减少漏电流的方法 |
CN107104115A (zh) * | 2015-12-28 | 2017-08-29 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN107104115B (zh) * | 2015-12-28 | 2021-11-26 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN108957883A (zh) * | 2018-07-20 | 2018-12-07 | 武汉华星光电技术有限公司 | 一种显示面板及显示设备 |
CN112470279A (zh) * | 2018-07-30 | 2021-03-09 | 索尼半导体解决方案公司 | 固态摄像装置和电子设备 |
CN109785797A (zh) * | 2019-03-14 | 2019-05-21 | 电子科技大学 | 一种新型的amoled像素电路 |
CN114497004A (zh) * | 2022-01-21 | 2022-05-13 | Nano科技(北京)有限公司 | 具有暗电流指示功能的光电二极管结构以及光电传感器 |
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KR100607619B1 (ko) | 2006-08-02 |
SG110066A1 (en) | 2005-04-28 |
CN100507684C (zh) | 2009-07-01 |
KR20040020033A (ko) | 2004-03-06 |
EP1394859A2 (en) | 2004-03-03 |
US7265740B2 (en) | 2007-09-04 |
TW200501021A (en) | 2005-01-01 |
EP1394859A3 (en) | 2008-07-09 |
TWI235351B (en) | 2005-07-01 |
US20040043676A1 (en) | 2004-03-04 |
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