CN114497004A - 具有暗电流指示功能的光电二极管结构以及光电传感器 - Google Patents

具有暗电流指示功能的光电二极管结构以及光电传感器 Download PDF

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CN114497004A
CN114497004A CN202210074477.9A CN202210074477A CN114497004A CN 114497004 A CN114497004 A CN 114497004A CN 202210074477 A CN202210074477 A CN 202210074477A CN 114497004 A CN114497004 A CN 114497004A
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photodiode
dark current
photosensitive
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石彬
祁帆
蔡鹏飞
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NANO (BEIJING) PHOTONICS Inc
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Abstract

本发明提供一种具有暗电流指示功能的光电二极管结构，包括：感光光电二极管及参考光电二极管；参考光电二极管的光敏面设置阻光层，且感光光电二极管与参考光电二极管的暗电流之间具有固定的倍数关系。本发明还提供一种光电传感器，包括：处理模块以及所述的光电二极管结构。通过本发明的结构设计，光电二极管结构可输出两路电流信号，使得实际工作时只需将两路电流信号相减即可得到准确的入射光电流，最终达到消除暗电流，减少噪声的目的，而且本发明无需通过增设外围器件来消除光电二极管的暗电流，因此本发明具有结构简洁，成本低廉的优势，而且进一步提升了光电转换效率。

Description

具有暗电流指示功能的光电二极管结构以及光电传感器
技术领域
本发明属于光电探测设备技术领域，尤其涉及一种具有暗电流指示功能的光电二极管结构以及光电传感器。
背景技术
光电二极管作为光电传感器的核心器件，可用于距离检测、接触报警和手势识别等，在这些应用中，光电二极管接收散射信号光，并将光信号转换成电信号输出。在整个接收过程中，光电二极管对散射信号光的收集能力和光电转换效率是两个关键因素，为提升上述两个性能，现有设计中最常见的方案是增大光电二极管的孔径以及吸收层的厚度，然而，孔径变大、吸收层增厚都会显著增加光电二极管的暗电流，从而增加噪声。
发明内容
为解决上述技术问题，本发明提供一种具有暗电流指示功能的光电二极管结构以及光电传感器。为了对披露的实施例的一些方面有一个基本的理解，下面给出了简单的概括。该概括部分不是泛泛评述，也不是要确定关键/重要组成元素或描绘这些实施例的保护范围。其唯一目的是用简单的形式呈现一些概念，以此作为后面的详细说明的序言。
本发明采用如下技术方案：
在一些可选的实施例中，提供一种具有暗电流指示功能的光电二极管结构，包括：感光光电二极管及参考光电二极管；所述参考光电二极管通过电极与所述感光光电二极管并联，所述参考光电二极管的光敏面设置阻光层，且所述感光光电二极管和所述参考光电二极管的暗电流之间具有固定的倍数关系。
进一步的，所述感光光电二极管以及所述参考光电二极管为锗硅光电二极管或锗硅雪崩光电二极管。
进一步的，所述感光光电二极管以及所述参考光电二极管使用硅作为基底，使用一层经过N掺杂的硅作为阴极连接层，使用一层经过P掺杂的硅作为阳极连接层，使用锗作为吸收层。
进一步的，当所述感光光电二极管与所述参考光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
进一步的，所述感光光电二极管的阳极与所述参考光电二极管的阳极连接，或者所述感光光电二极管的阴极与所述参考光电二极管的阴极连接；所述感光光电二极管与所述参考光电二极管之间的连接是指共用同一电极或者是指通过打线连接。
在一些可选的实施例中，提供一种光电传感器，包括：处理模块以及所述的具有暗电流指示功能的光电二极管结构；所述处理模块，用于获取所述感光光电二极管和所述参考光电二极管输出的两路电流信号，并将两路电流信号相减以消除暗电流。
进一步的，所述感光光电二极管的暗电流Id感光和所述参考光电二极管的暗电流Id参考之间具有固定的倍数关系：Id感光＝N×Id参考；
且所述感光光电二极管和所述参考光电二极管的暗电流之间具有固定的倍数关系，是指任何可以通过所述参考光电二极管指示所述感光光电二极管暗电流的情况，包括但不限于以下情况：
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系不随时间及环境的变化而变化，此时N为一客观的固定常数并存储在所述处理模块中；
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系随时间及环境的变化而变化，但此变化可忽略，此时所述处理模块预设一个固定常数作为N值；
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系随时间及环境的变化而变化，且此变化不可忽略，此时所述处理模块生成表格数据并存储，所述表格数据包含有不同环境及时间所对应的N值。
本发明所带来的有益效果：通过本发明的结构设计，光电二极管结构可输出两路电流信号，使得实际工作时只需将两路电流信号相减即可得到准确的入射光电流，最终达到消除暗电流，减少噪声的目的，而且本发明无需通过增设外围器件来消除光电二极管的暗电流，因此本发明具有结构简洁，成本低廉的优势，而且进一步提升了光电转换效率。
附图说明
图1是本发明一种具有暗电流指示功能的光电二极管结构的示意图；
图2是本发明一种具有暗电流指示功能的光电二极管结构的等效电路图。
具体实施方式
以下描述和附图充分地展示出本发明的具体实施方案，以使本领域的技术人员能够实践它们。其他实施方案可以包括结构的、逻辑的、电气的、过程的以及其他的改变。实施例仅代表可能的变化。除非明确要求，否则单独的部件和功能是可选的，并且操作的顺序可以变化。一些实施方案的部分和特征可以被包括在或替换其他实施方案的部分和特征。
实施例1：
如图1-2所示，本发明提供一种具有暗电流指示功能的光电二极管结构，包括：感光光电二极管1及参考光电二极管2。
感光光电二极管1通过光敏面102接收信号光，并把光信号转成电信号。
参考光电二极管2的光敏面设置阻光层103，因此，参考光电二极管2不接收信号光，其用于输出暗电流参考值，以实时指示感光光电二极管1的暗电流大小。其中，阻光层103为一层在二极管工作波段不透光的物质，使得杂散的信号光完全不能穿过，以保证参考光电二极管2在任意时刻输出的电流均为自身的暗电流，以保证后续可准确的消除暗电流。
阻光层103所使用的不透光的物质，可以是任何使信号光无法透过的介质、金属或结构等。具体的，可以是反射或吸收。
参考光电二极管2通过电极101与感光光电二极管1并联，感光光电二极管1的阳极与参考光电二极管2的阳极连接，或者感光光电二极管1的阴极与参考光电二极管2的阴极连接。感光光电二极管1与参考光电二极管2之间的连接是指两者共用同一电极，或者是指两者通过打线连接。
感光光电二极管1和参考光电二极管2的暗电流之间具有固定的倍数关系，即Id感光＝N×Id参考，其中，Id感光为感光光电二极管1的暗电流，Id参考为参考光电二极管2的暗电流。
图2中展示了感光光电二极管1和参考光电二极管2的阴极相连接的情况，对于感光光电二极管1和参考光电二极管2的阳极相连接的情况，其工作原理相同，因此也在本发明保护的范围内。图2中，第一端口的电压为V1，第二端口的电压为V2，第三端口的电压为V3。
对于感光光电二极管1，其偏压为第二端口与第三端口之间的电势差，即感光光电二极管的偏压为V2-V3，感光光电二极管1输出的电流为信号光电流和自身暗电流的和，即I信号+Id感光，方向为D→C→E→F。
对于参考光电二极管2，其偏压为第二端口与第一端口之间的电势差，即偏压为V2-V1，参考光电二极管2输出的电流为自身的暗电流，即Id参考，方向为D→C→B→A。
因此，本发明的光电二极管结构可输出两组电流信号：第一组由作为信号输出端的第三端口输出，输出电流为I信号+Id感光；第二组由作为参考端的第一端口输出，输出电流为Id参考。两组电流信号同时输出至光电二极管结构的外部进行后续运算，由于Id感光＝N×Id参考，所以令信号输出端输出的电流实时减去N×Id参考即可达到暗电流消除的效果，进而降低暗电流带来的噪声。
感光光电二极管1以及参考光电二极管2为锗硅光电二极管或锗硅雪崩光电二极管，且具有如下特征：
第一，使用硅作为基底；
第二，使用一层经过N掺杂的硅作为阴极连接层；
第三，使用一层经过P掺杂的硅作为阳极连接层；
第四，使用锗作为吸收层；
第五，当感光光电二极管与参考光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
保证本发明的光电二极管结构具有较高的光收集能力和光电转换效率。
实施例2：
本发明提供一种光电传感器，包括：处理模块以及实施例1中的具有暗电流指示功能的光电二极管结构。
处理模块，用于获取感光光电二极管1和参考光电二极管2输出的两路电流信号，并将两路电流信号相减以消除暗电流，最终得到准确的信号光电流。
实际应用时，光电二极管结构输出的两组电流信号同时由外电路收集，并输入到处理模块中进行运算，处理模块可以为运算器或微机处理系统。感光光电二极管1的暗电流Id感光和参考光电二极管2的暗电流Id参考之间具有固定的倍数关系：Id感光＝N×Id参考。
感光光电二极管1和参考光电二极管2的暗电流之间具有固定的倍数关系，是指任何可以通过参考光电二极管2指示感光光电二极管1暗电流的情况，包括但不限于以下情况：
第一种情况，感光光电二极管1和参考光电二极管2暗电流之间的倍数关系不随时间及环境的变化而变化，此时N为一客观的固定常数，其存储在处理模块中，处理模块具体计算时调取使用；
第二种情况，感光光电二极管1和参考光电二极管2暗电流之间的倍数关系随时间及环境的变化而变化，但变化量非常微小，使得实际计算时可以忽略此变化，此时处理模块预设一个固定常数作为N值，N值存储在处理模块中，具体计算时可调取使用；
第三种情况，感光光电二极管1和参考光电二极管2暗电流之间的倍数关系随时间及环境的变化而变化，且此变化不可忽略，此时处理模块生成表格数据并存储，表格数据包含有不同环境及时间所对应的N值，此表格数据储存在处理模块中，具体计算时通过查表实时获取N值再进行减法运算。
本发明提出的具有暗电流指示功能的光电二极管结构，同时具有感光光电二极管1和参考光电二极管2。工作时，该光电二极管结构同时输出两组电流信号。在外电路，通过对信号端的电流和参考端的电流进行实时运算，即可减去信号端电流中的暗电流组分，从而达到消除暗电流、减小噪声的效果。因此，本发明的结构设计使得芯片可直接输出两路电流信号，在外电路通过简单运算即可达到暗电流消除效果，在保证输出准确的入射光电流数值的前提下，本发明具有结构简洁，成本低廉的优点。
本领域技术人员还应当理解，结合本文的实施例描述的各种说明性的逻辑框、模块、电路和算法步骤均可以实现成电子硬件、计算机软件或其组合。为了清楚地说明硬件和软件之间的可交换性，上面对各种说明性的部件、框、模块、电路和步骤均围绕其功能进行了一般地描述。至于这种功能是实现成硬件还是实现成软件，取决于特定的应用和对整个系统所施加的设计约束条件。熟练的技术人员可以针对每个特定应用，以变通的方式实现所描述的功能，但是，这种实现决策不应解释为背离本公开的保护范围。

Claims (7)

1.一种具有暗电流指示功能的光电二极管结构，其特征在于，包括：感光光电二极管及参考光电二极管；
所述参考光电二极管通过电极与所述感光光电二极管并联，所述参考光电二极管的光敏面设置阻光层，且所述感光光电二极管和所述参考光电二极管的暗电流之间具有固定的倍数关系。
2.根据权利要求1所述的一种具有暗电流指示功能的光电二极管结构，其特征在于，所述感光光电二极管以及所述参考光电二极管为锗硅光电二极管或锗硅雪崩光电二极管。
3.根据权利要求2所述的一种具有暗电流指示功能的光电二极管结构，其特征在于，所述感光光电二极管以及所述参考光电二极管使用硅作为基底，使用一层经过N掺杂的硅作为阴极连接层，使用一层经过P掺杂的硅作为阳极连接层，使用锗作为吸收层。
4.根据权利要求3所述的一种具有暗电流指示功能的光电二极管结构，其特征在于，当所述感光光电二极管与所述参考光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
5.根据权利要求4所述的一种具有暗电流指示功能的光电二极管结构，其特征在于，所述感光光电二极管的阳极与所述参考光电二极管的阳极连接，或者所述感光光电二极管的阴极与所述参考光电二极管的阴极连接；
所述感光光电二极管与所述参考光电二极管之间的连接是指共用同一电极或者是指通过打线连接。
6.一种光电传感器，其特征在于，包括：处理模块以及如权利要求1-5任一项所述的具有暗电流指示功能的光电二极管结构；
所述处理模块，用于获取所述感光光电二极管和所述参考光电二极管输出的两路电流信号，并将两路电流信号相减以消除暗电流。
7.根据权利要求6所述的一种光电传感器，其特征在于，所述感光光电二极管的暗电流Id感光和所述参考光电二极管的暗电流Id参考之间具有固定的倍数关系：Id感光＝N×Id参考；
且所述感光光电二极管和所述参考光电二极管的暗电流之间具有固定的倍数关系，是指任何可以通过所述参考光电二极管指示所述感光光电二极管暗电流的情况，包括但不限于以下情况：
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系不随时间及环境的变化而变化，此时N为一客观的固定常数并存储在所述处理模块中；
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系随时间及环境的变化而变化，但此变化可忽略，此时所述处理模块预设一个固定常数作为N值；
所述感光光电二极管和所述参考光电二极管暗电流之间的倍数关系随时间及环境的变化而变化，且此变化不可忽略，此时所述处理模块生成表格数据并存储，所述表格数据包含有不同环境及时间所对应的N值。
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