CN114497003A - 一种具有暗电流自补偿功能的面入射光电二极管结构 - Google Patents

一种具有暗电流自补偿功能的面入射光电二极管结构 Download PDF

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CN114497003A
CN114497003A CN202210074447.8A CN202210074447A CN114497003A CN 114497003 A CN114497003 A CN 114497003A CN 202210074447 A CN202210074447 A CN 202210074447A CN 114497003 A CN114497003 A CN 114497003A
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photodiode
compensation
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石彬
祁帆
蔡鹏飞
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NANO (BEIJING) PHOTONICS Inc
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Abstract

本发明提供一种具有暗电流自补偿功能的面入射光电二极管结构，包括：感光光电二极管以及补偿光电二极管；补偿光电二极管的光敏面设置阻光层，且感光光电二极管与补偿光电二极管的暗电流相等。本发明无需外电路运放的配合，在芯片层面上即可实现暗电流的自补偿功能；本发明同时具有感光光电二极管与补偿光电二极管，工作时，补偿光电二极管可以将感光光电二极管的暗电流补偿抵消掉，从而减小感光光电二极管暗电流带来的噪声；本发明的感光光电二极管与补偿光电二极管的偏压是单独进行控制的，不会受到限制，因此可应用于更多的使用场景中。

Description

一种具有暗电流自补偿功能的面入射光电二极管结构
技术领域
本发明属于光电探测器技术领域，尤其涉及一种具有暗电流自补偿功能的面入射光电二极管结构。
背景技术
光电二极管作为光电传感器的核心器件，可用于距离检测、接触报警和手势识别等，在这些应用中，光电二极管接收散射信号光，并将光信号转换成电信号输出。在整个接收过程中，光电二极管对散射信号光的收集能力和光电转换效率是两个关键因素，为提升上述两个性能，现有设计中最常见的方案是增大光电二极管的孔径以及吸收层的厚度，然而，孔径变大、吸收层增厚都会显著增加光电二极管的暗电流，从而增加噪声。为解决上述技术问题，申请公布号为CN108829171A的专利文件公开一种消除监控二极管暗电流的装置及方法，但是需要在外电路配合使用可调电阻和运算放大器才能实现暗电流的消除，时效性较差。除此之外，CN108829171A所用两颗光电二极管与可调电阻直接串联后再接到5V偏压下，因此在调节过程中两颗光电二极管是联动的，为了实现暗电流的消除，感光二极管的偏压及工作状态是被限定的。
发明内容
为解决上述技术问题，本发明提供一种具有暗电流自补偿功能的面入射光电二极管结构。为了对披露的实施例的一些方面有一个基本的理解，下面给出了简单的概括。该概括部分不是泛泛评述，也不是要确定关键/重要组成元素或描绘这些实施例的保护范围。其唯一目的是用简单的形式呈现一些概念，以此作为后面的详细说明的序言。
本发明采用如下技术方案：
在一些可选的实施例中，提供一种具有暗电流自补偿功能的面入射光电二极管结构，包括：感光光电二极管以及补偿光电二极管；所述补偿光电二极管通过电极与所述感光光电二极管串联，所述补偿光电二极管的光敏面设置阻光层，且所述感光光电二极管与所述补偿光电二极管的暗电流相等。
进一步的，所述感光光电二极管的阳极与所述补偿光电二极管的阴极连接，或者，所述感光光电二极管的阴极与所述补偿光电二极管的阳极连接；所述感光光电二极管与所述补偿光电二极管相连接的一端作为面入射光电二极管结构的信号输出端。
进一步的，所述感光光电二极管以及所述补偿光电二极管为锗硅光电二极管或锗硅雪崩光电二极管。
进一步的，所述感光光电二极管以及所述补偿光电二极管使用硅作为基底，使用一层经过N掺杂的硅作为阴极连接层，使用一层经过P掺杂的硅作为阳极连接层，使用锗作为吸收层。
进一步的，当所述感光光电二极管与所述补偿光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
进一步的，所述感光光电二极管与所述补偿光电二极管的暗电流相等，是指所有使所述感光光电二极管和所述补偿光电二极管暗电流相等的情况，包括但不限于如下情况：
所述感光光电二极管与所述补偿光电二极管的结构和形状相同，且工作偏压相同，此时暗电流相等；
所述感光光电二极管与所述补偿光电二极管的结构和形状不相同，但结构和形状上的差异对两者在同一偏压下的暗电流数值无影响，两者工作偏压相同，此时暗电流相等；
所述感光光电二极管与所述补偿光电二极管的结构和形状不相同，且结构和形状上的差异使两者在同一偏压下的暗电流不相同，此时通过调整各自的工作偏压使得暗电流相等。
本发明所带来的有益效果：
1.本发明无需外电路运放的配合，在芯片层面上即可实现暗电流的自补偿功能，具有较好的时效性，而且可避免由于引入其他器件所带来的不稳定因素；
2.本发明同时具有感光光电二极管与补偿光电二极管，工作时，补偿光电二极管可以将感光光电二极管的暗电流补偿抵消掉，从而减小感光光电二极管暗电流带来的噪声；
3.本发明的感光光电二极管与补偿光电二极管的偏压是单独进行控制的，不会受到限制，因此可应用于更多的使用场景中。
附图说明
图1是本发明一种具有暗电流自补偿功能的面入射光电二极管结构的示意图；
图2是本发明一种具有暗电流自补偿功能的面入射光电二极管结构的等效电路图。
具体实施方式
以下描述和附图充分地展示出本发明的具体实施方案，以使本领域的技术人员能够实践它们。其他实施方案可以包括结构的、逻辑的、电气的、过程的以及其他的改变。实施例仅代表可能的变化。除非明确要求，否则单独的部件和功能是可选的，并且操作的顺序可以变化。一些实施方案的部分和特征可以被包括在或替换其他实施方案的部分和特征。
如图1-2所示，在一些说明性的实施例中，本发明提供一种具有暗电流自补偿功能的面入射光电二极管结构，包括：感光光电二极管1以及补偿光电二极管2。
感光光电二极管1通过光敏面102接收信号光，并把光信号转成电信号。
补偿光电二极管2的光敏面设置阻光层103，因此，补偿光电二极管2是不接收信号光的，其只是用于提供暗电流的实时补偿。其中，阻光层103为一层在二极管工作波段不透光的物质，使得杂散的信号光完全不能穿过，以保证补偿光电二极管2在任意时刻输出的电流均为自身的暗电流，以保证感光光电二极管1与补偿光电二极管2配合使用时可直接且准确的消除暗电流。
阻光层103所使用的是不透光的物质，可以是任何使信号光无法透过的介质、金属或结构等。具体的，可以是反射或吸收。
补偿光电二极管2通过电极101与感光光电二极管1串联，感光光电二极管1的阳极与补偿光电二极管2的阴极连接，或者，感光光电二极管1的阴极与补偿光电二极管2的阳极连接。感光光电二极管1与补偿光电二极管2之间的连接是指两者共用同一电极，或者是指两者通过打线连接。
感光光电二极管1与补偿光电二极管2的暗电流相等，即Id感光＝Id补偿，其中，Id感光为感光光电二极管1的暗电流，Id补偿为补偿光电二极管2的暗电流。
图2中展示了感光光电二极管1的阴极与补偿光电二极管2的阳极相连接的情况，对于感光光电二极管1的阳极和补偿光电二极管2的阴极相连接的情况，其工作原理相同，因此也在本发明保护的范围内。图2中，第一端口的电压为V1，第二端口的电压为V2，第三端口的电压为V3。
对于感光光电二极管1，其偏压为第二端口与第一端口之间的电势差，即感光光电二极管的偏压为V2-V1，感光光电二极管1输出的电流为信号光电流和自身暗电流的和，即I信号+Id感光，方向为D→C→B→A。
对于补偿光电二极管2，其偏压为第二端口与第三端口之间的电势差，即偏压为V3-V2，补偿光电二极管2输出的电流为自身的暗电流，即Id补偿，方向为F→E→C→D。
因此，对于第二端口所在的支路，感光光电二极管1和补偿光电二极管2的暗电流大小相等、方向相反，从而相互抵消。通过第二端口的总电流为I信号，从而消除了感光光电二极管1自身暗电流对信噪比的影响。感光光电二极管1与补偿光电二极管2相连接的一端则可作为面入射光电二极管结构的信号输出端。
感光光电二极管1以及补偿光电二极管2为锗硅光电二极管或锗硅雪崩光电二极管，且具有如下特征：
第一，使用硅作为基底；
第二，使用一层经过N掺杂的硅作为阴极连接层；
第三，使用一层经过P掺杂的硅作为阳极连接层；
第四，使用锗作为吸收层；
第五，当感光光电二极管与补偿光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
保证本发明的面入射光电二极管结构具有较高的光收集能力和光电转换效率。
感光光电二极管1与补偿光电二极管2的暗电流相等，是指所有使感光光电二极管1和补偿光电二极管2暗电流相等的情况，包括但不限于如下情况：
第一种情况，感光光电二极管1与补偿光电二极管2的结构和形状相同，且两者的工作偏压也相同，此时暗电流相等，可完全消除暗电流；
第二种情况，感光光电二极管1与补偿光电二极管2的结构和形状不相同，但结构和形状上的差异对两者在同一偏压下的暗电流数值无影响，且两者的工作偏压相同，此时暗电流相等，可完全消除暗电流；
第三种情况，感光光电二极管1与补偿光电二极管2的结构和形状不相同，且结构和形状上的差异使两者在同一偏压下的暗电流不相同，此时通过调整各自的工作偏压使得暗电流相等即可，此时也可完全消除暗电流。
本领域技术人员还应当理解，结合本文的实施例描述的各种说明性的逻辑框、模块、电路和算法步骤均可以实现成电子硬件、计算机软件或其组合。为了清楚地说明硬件和软件之间的可交换性，上面对各种说明性的部件、框、模块、电路和步骤均围绕其功能进行了一般地描述。至于这种功能是实现成硬件还是实现成软件，取决于特定的应用和对整个系统所施加的设计约束条件。熟练的技术人员可以针对每个特定应用，以变通的方式实现所描述的功能，但是，这种实现决策不应解释为背离本公开的保护范围。

Claims (6)

1.一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，包括：感光光电二极管以及补偿光电二极管；
所述补偿光电二极管通过电极与所述感光光电二极管串联，所述补偿光电二极管的光敏面设置阻光层，且所述感光光电二极管与所述补偿光电二极管的暗电流相等。
2.根据权利要求1所述的一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，所述感光光电二极管的阳极与所述补偿光电二极管的阴极连接，或者，所述感光光电二极管的阴极与所述补偿光电二极管的阳极连接；
所述感光光电二极管与所述补偿光电二极管相连接的一端作为面入射光电二极管结构的信号输出端。
3.根据权利要求2所述的一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，所述感光光电二极管以及所述补偿光电二极管为锗硅光电二极管或锗硅雪崩光电二极管。
4.根据权利要求3所述的一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，所述感光光电二极管以及所述补偿光电二极管使用硅作为基底，使用一层经过N掺杂的硅作为阴极连接层，使用一层经过P掺杂的硅作为阳极连接层，使用锗作为吸收层。
5.根据权利要求4所述的一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，当所述感光光电二极管与所述补偿光电二极管为雪崩光电二极管时，则使用一层本征硅作为光电倍增层，使用一层经过P掺杂的硅作为电荷层。
6.根据权利要求5所述的一种具有暗电流自补偿功能的面入射光电二极管结构，其特征在于，所述感光光电二极管与所述补偿光电二极管的暗电流相等，是指所有使所述感光光电二极管和所述补偿光电二极管暗电流相等的情况，包括但不限于如下情况：
所述感光光电二极管与所述补偿光电二极管的结构和形状相同，且工作偏压相同，此时暗电流相等；
所述感光光电二极管与所述补偿光电二极管的结构和形状不相同，但结构和形状上的差异对两者在同一偏压下的暗电流数值无影响，两者工作偏压相同，此时暗电流相等；
所述感光光电二极管与所述补偿光电二极管的结构和形状不相同，且结构和形状上的差异使两者在同一偏压下的暗电流不相同，此时通过调整各自的工作偏压使得暗电流相等。
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