CN1448992A - 在半导体器件中形成接触插塞的方法 - Google Patents
在半导体器件中形成接触插塞的方法 Download PDFInfo
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- CN1448992A CN1448992A CN03101730A CN03101730A CN1448992A CN 1448992 A CN1448992 A CN 1448992A CN 03101730 A CN03101730 A CN 03101730A CN 03101730 A CN03101730 A CN 03101730A CN 1448992 A CN1448992 A CN 1448992A
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- contact hole
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000011049 filling Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 36
- 238000004140 cleaning Methods 0.000 claims description 30
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- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
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- 238000005406 washing Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
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- 229920005591 polysilicon Polymers 0.000 description 22
- 230000001590 oxidative effect Effects 0.000 description 14
- 230000008021 deposition Effects 0.000 description 10
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- 239000011229 interlayer Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000000348 solid-phase epitaxy Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR17679/02 | 2002-03-30 | ||
KR10-2002-0017679A KR100446316B1 (ko) | 2002-03-30 | 2002-03-30 | 반도체장치의 콘택플러그 형성 방법 |
KR17679/2002 | 2002-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1448992A true CN1448992A (zh) | 2003-10-15 |
CN100338736C CN100338736C (zh) | 2007-09-19 |
Family
ID=28450112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031017304A Expired - Fee Related CN100338736C (zh) | 2002-03-30 | 2003-01-21 | 在半导体器件中形成接触插塞的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6844259B2 (zh) |
KR (1) | KR100446316B1 (zh) |
CN (1) | CN100338736C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102479923A (zh) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器的制作方法 |
CN108538780A (zh) * | 2018-04-18 | 2018-09-14 | 睿力集成电路有限公司 | 位线/存储节点接触栓塞和多晶硅接触薄膜的制造方法 |
CN109768050A (zh) * | 2018-12-18 | 2019-05-17 | 长江存储科技有限责任公司 | 三维存储器及其制备方法 |
CN110896668A (zh) * | 2018-12-18 | 2020-03-20 | 长江存储科技有限责任公司 | 多堆栈三维存储器件以及其形成方法 |
US11011539B2 (en) | 2018-12-18 | 2021-05-18 | Yangtze Memory Technologies Co., Ltd. | Multi-stack three-dimensional memory devices and methods for forming the same |
WO2022142314A1 (zh) * | 2020-12-30 | 2022-07-07 | 长鑫存储技术有限公司 | 存储节点接触结构的形成方法及半导体结构 |
Families Citing this family (25)
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---|---|---|---|---|
KR100475122B1 (ko) * | 2002-12-20 | 2005-03-10 | 삼성전자주식회사 | 실리콘 접촉저항을 개선할 수 있는 반도체 소자 형성방법 |
US7049230B2 (en) * | 2003-11-26 | 2006-05-23 | Hynix Semiconductor Inc. | Method of forming a contact plug in a semiconductor device |
US20050164469A1 (en) * | 2004-01-28 | 2005-07-28 | Infineon Technologies North America Corp. | Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches |
US7138307B2 (en) * | 2004-08-04 | 2006-11-21 | Intel Corporation | Method to produce highly doped polysilicon thin films |
US20060182993A1 (en) * | 2004-08-10 | 2006-08-17 | Mitsubishi Chemical Corporation | Compositions for organic electroluminescent device and organic electroluminescent device |
US7144808B1 (en) | 2005-06-13 | 2006-12-05 | Texas Instruments Incorporated | Integration flow to prevent delamination from copper |
US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
US20060281303A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Tack & fuse chip bonding |
US7786592B2 (en) * | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
US7687400B2 (en) * | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7838997B2 (en) * | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7560813B2 (en) * | 2005-06-14 | 2009-07-14 | John Trezza | Chip-based thermo-stack |
US7851348B2 (en) * | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US8456015B2 (en) * | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
US7781886B2 (en) * | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
KR100605585B1 (ko) * | 2005-06-20 | 2006-07-31 | 주식회사 하이닉스반도체 | 이중층 고상에피택시실리콘을 패드플러그로서 갖는 반도체소자 및 제조방법 |
US7687397B2 (en) * | 2006-06-06 | 2010-03-30 | John Trezza | Front-end processed wafer having through-chip connections |
US20070281460A1 (en) * | 2006-06-06 | 2007-12-06 | Cubic Wafer, Inc. | Front-end processed wafer having through-chip connections |
JP4249765B2 (ja) * | 2006-07-05 | 2009-04-08 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
JP2009200384A (ja) * | 2008-02-25 | 2009-09-03 | Elpida Memory Inc | 単結晶層含有基板、soi基板、半導体装置およびそれらの製造方法 |
KR101076887B1 (ko) | 2009-06-26 | 2011-10-25 | 주식회사 하이닉스반도체 | 반도체 메모리소자의 랜딩플러그 형성방법 |
EP2416350A1 (en) | 2010-08-06 | 2012-02-08 | Imec | A method for selective deposition of a semiconductor material |
US8815735B2 (en) * | 2012-05-03 | 2014-08-26 | Nanya Technology Corporation | Semiconductor device and method of manufacturing the same |
Family Cites Families (16)
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JPH0671073B2 (ja) * | 1989-08-29 | 1994-09-07 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2808965B2 (ja) * | 1992-02-19 | 1998-10-08 | 日本電気株式会社 | 半導体装置 |
JP2699921B2 (ja) * | 1995-04-21 | 1998-01-19 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2685028B2 (ja) * | 1995-05-31 | 1997-12-03 | 日本電気株式会社 | 半導体装置の製造方法 |
US5599736A (en) * | 1995-06-28 | 1997-02-04 | Vanguard International Semiconductor Corporation | Fabrication method for polysilicon contact plugs |
JPH09115866A (ja) * | 1995-10-17 | 1997-05-02 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5759905A (en) * | 1995-12-29 | 1998-06-02 | Micron Technology, Inc. | Semiconductor processing method of forming a conductively doped semiconductive material plug within a contact opening |
JPH1027847A (ja) * | 1996-07-09 | 1998-01-27 | Mitsubishi Electric Corp | 集積化半導体素子 |
JP2877108B2 (ja) * | 1996-12-04 | 1999-03-31 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR100426492B1 (ko) * | 1996-12-28 | 2004-06-11 | 주식회사 하이닉스반도체 | 반도체소자의전하저장전극형성방법 |
US5994211A (en) * | 1997-11-21 | 1999-11-30 | Lsi Logic Corporation | Method and composition for reducing gate oxide damage during RF sputter clean |
US6249010B1 (en) * | 1998-08-17 | 2001-06-19 | National Semiconductor Corporation | Dielectric-based anti-fuse cell with polysilicon contact plug and method for its manufacture |
KR100322536B1 (ko) * | 1999-06-29 | 2002-03-18 | 윤종용 | 에치 백을 이용한 다결정 실리콘 컨택 플러그 형성방법 및 이를 이용한 반도체 소자의 제조방법 |
US6187659B1 (en) * | 1999-08-06 | 2001-02-13 | Taiwan Semiconductor Manufacturing Company | Node process integration technology to improve data retention for logic based embedded dram |
US6268281B1 (en) * | 1999-11-15 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Method to form self-aligned contacts with polysilicon plugs |
JP2002009038A (ja) * | 2000-06-21 | 2002-01-11 | Asm Japan Kk | 半導体基板の処理方法 |
-
2002
- 2002-03-30 KR KR10-2002-0017679A patent/KR100446316B1/ko not_active IP Right Cessation
- 2002-12-31 US US10/331,724 patent/US6844259B2/en not_active Expired - Fee Related
-
2003
- 2003-01-21 CN CNB031017304A patent/CN100338736C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102479923A (zh) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器的制作方法 |
CN102479923B (zh) * | 2010-11-30 | 2014-04-02 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器的制作方法 |
CN108538780A (zh) * | 2018-04-18 | 2018-09-14 | 睿力集成电路有限公司 | 位线/存储节点接触栓塞和多晶硅接触薄膜的制造方法 |
CN109768050A (zh) * | 2018-12-18 | 2019-05-17 | 长江存储科技有限责任公司 | 三维存储器及其制备方法 |
CN110896668A (zh) * | 2018-12-18 | 2020-03-20 | 长江存储科技有限责任公司 | 多堆栈三维存储器件以及其形成方法 |
US10985142B2 (en) | 2018-12-18 | 2021-04-20 | Yangtze Memory Technologies Co., Ltd. | Multi-deck three-dimensional memory devices and methods for forming the same |
US11011539B2 (en) | 2018-12-18 | 2021-05-18 | Yangtze Memory Technologies Co., Ltd. | Multi-stack three-dimensional memory devices and methods for forming the same |
CN110896668B (zh) * | 2018-12-18 | 2021-07-20 | 长江存储科技有限责任公司 | 多堆栈三维存储器件以及其形成方法 |
US11367737B2 (en) | 2018-12-18 | 2022-06-21 | Yangtze Memory Technologies Co., Ltd. | Multi-stack three-dimensional memory devices and methods for forming the same |
WO2022142314A1 (zh) * | 2020-12-30 | 2022-07-07 | 长鑫存储技术有限公司 | 存储节点接触结构的形成方法及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
CN100338736C (zh) | 2007-09-19 |
KR100446316B1 (ko) | 2004-09-01 |
US20030186533A1 (en) | 2003-10-02 |
US6844259B2 (en) | 2005-01-18 |
KR20030078562A (ko) | 2003-10-08 |
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