CN1427456A - 在半导体器件上形成多孔介电材料层的方法及形成的器件 - Google Patents
在半导体器件上形成多孔介电材料层的方法及形成的器件 Download PDFInfo
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- CN1427456A CN1427456A CN01143895A CN01143895A CN1427456A CN 1427456 A CN1427456 A CN 1427456A CN 01143895 A CN01143895 A CN 01143895A CN 01143895 A CN01143895 A CN 01143895A CN 1427456 A CN1427456 A CN 1427456A
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- dielectric material
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- temperature
- porous dielectric
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Images
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (50)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/739,935 | 2000-12-18 | ||
US09/739,935 US6451712B1 (en) | 2000-12-18 | 2000-12-18 | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1427456A true CN1427456A (zh) | 2003-07-02 |
CN1236479C CN1236479C (zh) | 2006-01-11 |
Family
ID=24974382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011438959A Expired - Fee Related CN1236479C (zh) | 2000-12-18 | 2001-12-18 | 在半导体器件上形成多孔介电材料层的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6451712B1 (zh) |
KR (1) | KR100411986B1 (zh) |
CN (1) | CN1236479C (zh) |
HK (1) | HK1055641A1 (zh) |
SG (2) | SG125963A1 (zh) |
TW (1) | TW513764B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7816256B2 (en) | 2006-07-17 | 2010-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for improving the reliability of interconnect structures and resulting structure |
CN103378052A (zh) * | 2012-04-20 | 2013-10-30 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法以及形成导电部件的方法 |
CN103578969A (zh) * | 2012-08-03 | 2014-02-12 | 英飞凌科技奥地利有限公司 | 制造包括介电结构的半导体器件的方法 |
CN104779197A (zh) * | 2014-01-13 | 2015-07-15 | 台湾积体电路制造股份有限公司 | 半导体器件金属化系统和方法 |
CN116798952A (zh) * | 2023-08-21 | 2023-09-22 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及半导体器件 |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
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TW410435B (en) * | 1998-06-30 | 2000-11-01 | United Microelectronics Corp | The metal interconnection manufacture by using the chemical mechanical polishing process |
US6541367B1 (en) * | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6423811B1 (en) | 2000-07-19 | 2002-07-23 | Honeywell International Inc. | Low dielectric constant materials with polymeric networks |
EP1323189A2 (en) | 2000-09-13 | 2003-07-02 | Shipley Company LLC | Electronic device manufacture |
US7141188B2 (en) * | 2001-05-30 | 2006-11-28 | Honeywell International Inc. | Organic compositions |
US6740685B2 (en) * | 2001-05-30 | 2004-05-25 | Honeywell International Inc. | Organic compositions |
US20040102584A1 (en) * | 2001-12-03 | 2004-05-27 | Lau Kreisler S. | Low dielectric constant materials with polymeric networks |
US6933586B2 (en) * | 2001-12-13 | 2005-08-23 | International Business Machines Corporation | Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens |
US7456488B2 (en) * | 2002-11-21 | 2008-11-25 | Advanced Technology Materials, Inc. | Porogen material |
US7423166B2 (en) | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
US7108771B2 (en) * | 2001-12-13 | 2006-09-19 | Advanced Technology Materials, Inc. | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films |
US6723634B1 (en) * | 2002-03-14 | 2004-04-20 | Advanced Micro Devices, Inc. | Method of forming interconnects with improved barrier layer adhesion |
EP1493183B1 (en) | 2002-04-02 | 2012-12-05 | Dow Global Technologies LLC | Process for making air gap containing semiconducting devices and resulting semiconducting device |
KR101051276B1 (ko) * | 2002-04-02 | 2011-07-22 | 다우 글로벌 테크놀로지스 엘엘씨 | 이중 다마신 배선의 패터닝을 위한 3층 마스킹 구조물 |
JP2003338499A (ja) * | 2002-05-20 | 2003-11-28 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
US6831003B1 (en) | 2002-05-31 | 2004-12-14 | Advanced Micro Devices, Inc. | Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration |
US6903001B2 (en) * | 2002-07-18 | 2005-06-07 | Micron Technology Inc. | Techniques to create low K ILD for BEOL |
US6964919B2 (en) * | 2002-08-12 | 2005-11-15 | Intel Corporation | Low-k dielectric film with good mechanical strength |
JP2004104012A (ja) * | 2002-09-12 | 2004-04-02 | Renesas Technology Corp | 半導体装置 |
JP2004274020A (ja) * | 2002-09-24 | 2004-09-30 | Rohm & Haas Electronic Materials Llc | 電子デバイス製造 |
KR100481181B1 (ko) * | 2002-11-08 | 2005-04-07 | 삼성전자주식회사 | 반도체소자의 다공성 물질막을 형성하는 방법 |
US6917108B2 (en) * | 2002-11-14 | 2005-07-12 | International Business Machines Corporation | Reliable low-k interconnect structure with hybrid dielectric |
US6924222B2 (en) * | 2002-11-21 | 2005-08-02 | Intel Corporation | Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide |
US6943121B2 (en) * | 2002-11-21 | 2005-09-13 | Intel Corporation | Selectively converted inter-layer dielectric |
US7018918B2 (en) * | 2002-11-21 | 2006-03-28 | Intel Corporation | Method of forming a selectively converted inter-layer dielectric using a porogen material |
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CN116798952A (zh) * | 2023-08-21 | 2023-09-22 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及半导体器件 |
CN116798952B (zh) * | 2023-08-21 | 2023-11-14 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及半导体器件 |
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US6831364B2 (en) | 2004-12-14 |
US20030057414A1 (en) | 2003-03-27 |
US20020074659A1 (en) | 2002-06-20 |
SG106653A1 (en) | 2004-10-29 |
KR100411986B1 (ko) | 2003-12-24 |
CN1236479C (zh) | 2006-01-11 |
HK1055641A1 (en) | 2004-01-16 |
SG125963A1 (en) | 2006-10-30 |
KR20020048861A (ko) | 2002-06-24 |
TW513764B (en) | 2002-12-11 |
US6451712B1 (en) | 2002-09-17 |
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