CN1391263A - 用于清洗晶片的清洗水和清洗晶片的方法 - Google Patents
用于清洗晶片的清洗水和清洗晶片的方法 Download PDFInfo
- Publication number
- CN1391263A CN1391263A CN02123010A CN02123010A CN1391263A CN 1391263 A CN1391263 A CN 1391263A CN 02123010 A CN02123010 A CN 02123010A CN 02123010 A CN02123010 A CN 02123010A CN 1391263 A CN1391263 A CN 1391263A
- Authority
- CN
- China
- Prior art keywords
- wafer
- water
- clean
- clean wafers
- rinse water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 193
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 235000012431 wafers Nutrition 0.000 title claims description 241
- 238000005406 washing Methods 0.000 title abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 16
- 230000002829 reductive effect Effects 0.000 claims description 54
- 238000001035 drying Methods 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 6
- 229960001231 choline Drugs 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- -1 polyoxy Polymers 0.000 claims 2
- 238000005201 scrubbing Methods 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 abstract description 11
- 230000033116 oxidation-reduction process Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 46
- 239000002245 particle Substances 0.000 description 21
- 238000004220 aggregation Methods 0.000 description 13
- 230000002776 aggregation Effects 0.000 description 13
- 230000003068 static effect Effects 0.000 description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
- C02F2103/346—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from semiconductor processing, e.g. waste water from polishing of wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001179081A JP4046486B2 (ja) | 2001-06-13 | 2001-06-13 | 洗浄水及びウエハの洗浄方法 |
JP179081/2001 | 2001-06-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1391263A true CN1391263A (zh) | 2003-01-15 |
CN1177355C CN1177355C (zh) | 2004-11-24 |
Family
ID=19019691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021230102A Expired - Fee Related CN1177355C (zh) | 2001-06-13 | 2002-06-13 | 用于清洗晶片的清洗水和清洗晶片的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6797648B2 (zh) |
JP (1) | JP4046486B2 (zh) |
KR (1) | KR20020095115A (zh) |
CN (1) | CN1177355C (zh) |
TW (1) | TW578224B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311520C (zh) * | 2003-09-05 | 2007-04-18 | 大日本斯克林制造株式会社 | 晶片清洗方法与设备 |
CN100343957C (zh) * | 2003-12-25 | 2007-10-17 | 中芯国际集成电路制造(上海)有限公司 | 晶圆喷洗装置 |
CN100362629C (zh) * | 2005-05-13 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体晶片的清洗方法 |
CN1923381B (zh) * | 2005-08-30 | 2012-06-27 | 东京毅力科创株式会社 | 基板清洗装置和基板清洗方法 |
WO2018000353A1 (en) * | 2016-06-30 | 2018-01-04 | Texas Instruments Incorporated | Contaminant removal in ultra-thin semiconductor device fabrication |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4046486B2 (ja) * | 2001-06-13 | 2008-02-13 | Necエレクトロニクス株式会社 | 洗浄水及びウエハの洗浄方法 |
JP2004273961A (ja) * | 2003-03-12 | 2004-09-30 | Ebara Corp | 金属配線形成基板の洗浄処理装置 |
US20050000549A1 (en) * | 2003-07-03 | 2005-01-06 | Oikari James R. | Wafer processing using gaseous antistatic agent during drying phase to control charge build-up |
US7022610B2 (en) * | 2003-12-22 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company | Wet cleaning method to eliminate copper corrosion |
US20080257386A1 (en) * | 2003-12-23 | 2008-10-23 | The Australian National University | Water-Based Cleaning |
US20060112971A1 (en) * | 2004-11-30 | 2006-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of eliminating galvanic corrosion in copper CMP |
KR20060075315A (ko) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조용 구리 화합물 이물질 제거를 위한 세정방법 |
JP2006231474A (ja) * | 2005-02-25 | 2006-09-07 | Disco Abrasive Syst Ltd | 切削装置 |
JP4840020B2 (ja) | 2005-10-14 | 2011-12-21 | ソニー株式会社 | 基板の処理方法 |
US20070190788A1 (en) * | 2006-02-15 | 2007-08-16 | Manoj Balachandran | Wafer removing force reduction on cmp tool |
JP2007317790A (ja) * | 2006-05-24 | 2007-12-06 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5096849B2 (ja) * | 2007-09-13 | 2012-12-12 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
JP5689790B2 (ja) * | 2008-04-03 | 2015-03-25 | サッチェム,インコーポレイテッド | ジカルボン酸オニウムを用いた先進セラミック粉末の調製方法 |
JP2010205782A (ja) * | 2009-02-27 | 2010-09-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2011035300A (ja) * | 2009-08-05 | 2011-02-17 | Asahi Sunac Corp | 洗浄装置、及び洗浄方法 |
CN101972754B (zh) * | 2010-07-21 | 2012-09-05 | 河北工业大学 | 铌酸锂晶片碱性cmp后的表面洁净方法 |
CN101972755B (zh) * | 2010-07-21 | 2012-02-01 | 河北工业大学 | Ulsi铜材料抛光后表面清洗方法 |
CN101912856B (zh) * | 2010-07-21 | 2012-09-19 | 河北工业大学 | 铌酸锂晶体化学机械抛光后的应力控制方法 |
US20130068264A1 (en) * | 2011-09-21 | 2013-03-21 | Nanya Technology Corporation | Wafer scrubber apparatus |
JP2013211404A (ja) * | 2012-03-30 | 2013-10-10 | Kurita Water Ind Ltd | 金属露出基板の洗浄方法 |
JP6378890B2 (ja) * | 2013-03-01 | 2018-08-22 | 株式会社荏原製作所 | 基板処理方法 |
JP6289241B2 (ja) * | 2013-06-20 | 2018-03-07 | 東京エレクトロン株式会社 | 液処理方法、液処理装置及び記憶媒体 |
JP6225067B2 (ja) * | 2013-06-21 | 2017-11-01 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
JP6453724B2 (ja) | 2014-08-26 | 2019-01-16 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
JP6531406B2 (ja) * | 2015-01-29 | 2019-06-19 | 栗田工業株式会社 | 半導体装置の製造方法 |
JP6990034B2 (ja) | 2017-04-19 | 2022-01-12 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR102236398B1 (ko) * | 2020-09-22 | 2021-04-02 | 에스케이씨 주식회사 | 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼 |
US11769662B2 (en) * | 2021-03-19 | 2023-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing charging of semiconductor wafers |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1995004372A1 (en) * | 1993-07-30 | 1995-02-09 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
TW318190B (zh) * | 1993-10-06 | 1997-10-21 | Hitachi Shipbuilding Eng Co | |
US5928207A (en) * | 1997-06-30 | 1999-07-27 | The Regents Of The University Of California | Microneedle with isotropically etched tip, and method of fabricating such a device |
US6517637B1 (en) * | 1997-07-23 | 2003-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for cleaning wafers with ionized water |
US5932022A (en) * | 1998-04-21 | 1999-08-03 | Harris Corporation | SC-2 based pre-thermal treatment wafer cleaning process |
JP4200565B2 (ja) * | 1998-06-24 | 2008-12-24 | 日立金属株式会社 | 電子部品の洗浄方法 |
US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
US6589359B2 (en) * | 2000-07-11 | 2003-07-08 | Tokyo Electron Limited | Cleaning method and cleaning apparatus for substrate |
JP4046486B2 (ja) * | 2001-06-13 | 2008-02-13 | Necエレクトロニクス株式会社 | 洗浄水及びウエハの洗浄方法 |
US6764551B2 (en) * | 2001-10-05 | 2004-07-20 | International Business Machines Corporation | Process for removing dopant ions from a substrate |
JP2004140196A (ja) * | 2002-10-17 | 2004-05-13 | Nec Electronics Corp | 半導体装置の製造方法および基板洗浄装置 |
-
2001
- 2001-06-13 JP JP2001179081A patent/JP4046486B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-11 KR KR1020020032445A patent/KR20020095115A/ko not_active Application Discontinuation
- 2002-06-12 TW TW091112855A patent/TW578224B/zh active
- 2002-06-13 CN CNB021230102A patent/CN1177355C/zh not_active Expired - Fee Related
- 2002-06-13 US US10/167,442 patent/US6797648B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311520C (zh) * | 2003-09-05 | 2007-04-18 | 大日本斯克林制造株式会社 | 晶片清洗方法与设备 |
CN100343957C (zh) * | 2003-12-25 | 2007-10-17 | 中芯国际集成电路制造(上海)有限公司 | 晶圆喷洗装置 |
CN100362629C (zh) * | 2005-05-13 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体晶片的清洗方法 |
CN1923381B (zh) * | 2005-08-30 | 2012-06-27 | 东京毅力科创株式会社 | 基板清洗装置和基板清洗方法 |
WO2018000353A1 (en) * | 2016-06-30 | 2018-01-04 | Texas Instruments Incorporated | Contaminant removal in ultra-thin semiconductor device fabrication |
Also Published As
Publication number | Publication date |
---|---|
KR20020095115A (ko) | 2002-12-20 |
JP2002373879A (ja) | 2002-12-26 |
US6797648B2 (en) | 2004-09-28 |
CN1177355C (zh) | 2004-11-24 |
TW578224B (en) | 2004-03-01 |
US20020189639A1 (en) | 2002-12-19 |
JP4046486B2 (ja) | 2008-02-13 |
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