CN1364317A - 半导体元件及其制造方法 - Google Patents
半导体元件及其制造方法 Download PDFInfo
- Publication number
- CN1364317A CN1364317A CN00805029A CN00805029A CN1364317A CN 1364317 A CN1364317 A CN 1364317A CN 00805029 A CN00805029 A CN 00805029A CN 00805029 A CN00805029 A CN 00805029A CN 1364317 A CN1364317 A CN 1364317A
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- China
- Prior art keywords
- layer
- tungsten
- tungsten oxide
- oxide layer
- semiconductor component
- Prior art date
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910001930 tungsten oxide Inorganic materials 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 52
- 239000010937 tungsten Substances 0.000 claims description 52
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000012298 atmosphere Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- -1 tungsten nitride Chemical class 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 150000002366 halogen compounds Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- AAWZNWVCESLFTD-UHFFFAOYSA-N tungsten;hydrate Chemical compound O.[W] AAWZNWVCESLFTD-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ZKIHCVGCBDREBT-UHFFFAOYSA-N [F].[W] Chemical class [F].[W] ZKIHCVGCBDREBT-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US6140167A (en) * | 1998-08-18 | 2000-10-31 | Advanced Micro Devices, Inc. | High performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formation |
US6204203B1 (en) * | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
-
1999
- 1999-01-14 DE DE19901210A patent/DE19901210A1/de not_active Withdrawn
-
2000
- 2000-01-05 JP JP2000593084A patent/JP2002534818A/ja active Pending
- 2000-01-05 DE DE50015090T patent/DE50015090D1/de not_active Expired - Lifetime
- 2000-01-05 CN CNB008050295A patent/CN100355085C/zh not_active Expired - Fee Related
- 2000-01-05 KR KR1020017008873A patent/KR100703260B1/ko not_active IP Right Cessation
- 2000-01-05 WO PCT/DE2000/000047 patent/WO2000041459A2/de active IP Right Grant
- 2000-01-05 EP EP00902538A patent/EP1145279B1/de not_active Expired - Lifetime
- 2000-01-11 TW TW089100324A patent/TW478165B/zh not_active IP Right Cessation
-
2001
- 2001-07-16 US US09/906,338 patent/US6960541B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101159284B (zh) * | 2007-09-13 | 2010-09-29 | 复旦大学 | 一种自对准形成上电极的wox电阻存储器及其制造方法 |
CN101826595B (zh) * | 2009-03-03 | 2013-02-27 | 复旦大学 | 一种WOx基电阻型存储器及其制备方法 |
CN102169956A (zh) * | 2010-02-25 | 2011-08-31 | 复旦大学 | 一种氧化钨基电阻型存储器及其制备方法 |
CN102169956B (zh) * | 2010-02-25 | 2013-04-17 | 复旦大学 | 一种氧化钨基电阻型存储器及其制备方法 |
CN111977629A (zh) * | 2019-05-21 | 2020-11-24 | 中国科学院宁波材料技术与工程研究所 | 一种氮化钨包覆碳球并在碳球上原位生成氮化钨纳米棒的合成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2000041459A3 (de) | 2001-05-10 |
US20020070414A1 (en) | 2002-06-13 |
CN100355085C (zh) | 2007-12-12 |
KR100703260B1 (ko) | 2007-04-03 |
EP1145279A2 (de) | 2001-10-17 |
EP1145279B1 (de) | 2008-04-09 |
TW478165B (en) | 2002-03-01 |
US6960541B2 (en) | 2005-11-01 |
DE19901210A1 (de) | 2000-07-27 |
JP2002534818A (ja) | 2002-10-15 |
WO2000041459A2 (de) | 2000-07-20 |
KR20010101512A (ko) | 2001-11-14 |
DE50015090D1 (de) | 2008-05-21 |
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