CN1342986A - 氧化物超导体的制造方法,氧化物超导体用的原料及其制备方法 - Google Patents
氧化物超导体的制造方法,氧化物超导体用的原料及其制备方法 Download PDFInfo
- Publication number
- CN1342986A CN1342986A CN01132673A CN01132673A CN1342986A CN 1342986 A CN1342986 A CN 1342986A CN 01132673 A CN01132673 A CN 01132673A CN 01132673 A CN01132673 A CN 01132673A CN 1342986 A CN1342986 A CN 1342986A
- Authority
- CN
- China
- Prior art keywords
- metal trifluoroacetate
- mixed metal
- oxide superconductor
- water
- acetic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000463 material Substances 0.000 title description 4
- 238000002360 preparation method Methods 0.000 title description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 219
- 229910052751 metal Inorganic materials 0.000 claims abstract description 160
- 239000002184 metal Substances 0.000 claims abstract description 154
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 88
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 claims abstract description 63
- 239000000243 solution Substances 0.000 claims abstract description 49
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 23
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 15
- 229910052788 barium Inorganic materials 0.000 claims abstract description 13
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 13
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- VFRSADQPWYCXDG-LEUCUCNGSA-N ethyl (2s,5s)-5-methylpyrrolidine-2-carboxylate;2,2,2-trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.CCOC(=O)[C@@H]1CC[C@H](C)N1 VFRSADQPWYCXDG-LEUCUCNGSA-N 0.000 claims description 67
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 66
- 239000000126 substance Substances 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000000746 purification Methods 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 21
- 238000006467 substitution reaction Methods 0.000 claims description 20
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000004821 distillation Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical class [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- RXUSTVIGZPRAQZ-UHFFFAOYSA-N 2,2,2-trifluoroacetic acid;yttrium Chemical compound [Y].OC(=O)C(F)(F)F.OC(=O)C(F)(F)F.OC(=O)C(F)(F)F RXUSTVIGZPRAQZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- -1 etc.) Chemical compound 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910001422 barium ion Inorganic materials 0.000 description 1
- BQJILRFOGPBJQJ-UHFFFAOYSA-L barium(2+);2,2,2-trifluoroacetate Chemical compound [Ba+2].[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F BQJILRFOGPBJQJ-UHFFFAOYSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- JIDMEYQIXXJQCC-UHFFFAOYSA-L copper;2,2,2-trifluoroacetate Chemical compound [Cu+2].[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F JIDMEYQIXXJQCC-UHFFFAOYSA-L 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000002595 magnetic resonance imaging Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- JPDBEEUPLFWHAJ-UHFFFAOYSA-K samarium(3+);triacetate Chemical compound [Sm+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JPDBEEUPLFWHAJ-UHFFFAOYSA-K 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP269251/2000 | 2000-09-05 | ||
JP269251/00 | 2000-09-05 | ||
JP2000269251A JP3556586B2 (ja) | 2000-09-05 | 2000-09-05 | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1342986A true CN1342986A (zh) | 2002-04-03 |
CN1185660C CN1185660C (zh) | 2005-01-19 |
Family
ID=18755896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011326735A Expired - Lifetime CN1185660C (zh) | 2000-09-05 | 2001-09-05 | 氧化物超导体的制造方法、氧化物超导体用的原料及其制备方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6586042B2 (zh) |
EP (1) | EP1187231B1 (zh) |
JP (1) | JP3556586B2 (zh) |
KR (1) | KR100417146B1 (zh) |
CN (1) | CN1185660C (zh) |
DE (1) | DE60125114T2 (zh) |
DK (1) | DK1187231T3 (zh) |
Cited By (4)
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CN100360470C (zh) * | 2006-04-30 | 2008-01-09 | 西安理工大学 | 钇钡铜氧超导膜的溶胶-凝胶制备方法 |
CN100456508C (zh) * | 2004-07-30 | 2009-01-28 | 株式会社东芝 | 氧化物超导薄膜及其制备方法 |
CN102443792A (zh) * | 2011-12-02 | 2012-05-09 | 西安理工大学 | Ybco超导薄膜的低氟溶液沉积及其热处理工艺 |
CN101747031B (zh) * | 2008-12-16 | 2012-07-18 | 北京有色金属研究总院 | 一种高温超导纳米复合薄膜及其制备方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3548801B2 (ja) * | 2001-03-27 | 2004-07-28 | 独立行政法人産業技術総合研究所 | 特定の金属種に特定の配位子を配位させた金属錯体を含む溶液組成物、希土類超電導膜製造用溶液組成物、特定金属錯体の非結晶固形物、特定の金属種に特定の配位子を配位させた金属錯体を含む溶液の製造方法、希土類超電導膜製造用溶液の製造方法、及び超電導薄膜の形成方法。 |
WO2002093590A1 (fr) * | 2001-05-15 | 2002-11-21 | International Superconductivity Technology Center, The Juridical Foundation | Supraconducteur oxyde sous forme de ruban et son mode de fabrication |
US20030130129A1 (en) * | 2001-07-13 | 2003-07-10 | Massachusetts Institute Of Technology | Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing |
JP3725085B2 (ja) * | 2002-03-05 | 2005-12-07 | 株式会社東芝 | 超電導層及びその製造方法 |
JP4203606B2 (ja) * | 2002-11-08 | 2009-01-07 | 財団法人国際超電導産業技術研究センター | 酸化物超電導厚膜用組成物及び厚膜テープ状酸化物超電導体 |
KR100529602B1 (ko) * | 2003-07-18 | 2005-11-17 | 한국산업기술대학교 | 희토류원소계 초전도 산화물을 이용하는 유기금속증착용 전구용액 제조방법 및 유기금속증착법에 의한 박막형 초전도체 제조방법 |
US20050159298A1 (en) * | 2004-01-16 | 2005-07-21 | American Superconductor Corporation | Oxide films with nanodot flux pinning centers |
EP1655787A1 (en) * | 2004-11-03 | 2006-05-10 | Nexans | Precursor composition for YBCO-based superconductors |
DE102004041053B4 (de) * | 2004-08-25 | 2007-08-16 | Trithor Gmbh | Verfahren zur Herstellung dicker REBCO-Schichten für bandförmige Hochtemeperatur-Supraleiter |
JP4208806B2 (ja) * | 2004-09-16 | 2009-01-14 | 株式会社東芝 | 酸化物超電導体の製造方法 |
EP1655788B1 (en) * | 2004-11-03 | 2009-04-15 | Nexans | Precursor composition for YBCO-based superconductors |
KR100694850B1 (ko) * | 2005-07-01 | 2007-03-13 | 학교법인 한국산업기술대학 | 유기금속전구용액 제조방법 및 이를 이용한유기금속증착법에 의한 박막형 산화물 초전도체 제조방법 |
KR100851620B1 (ko) | 2006-11-14 | 2008-08-12 | 학교법인 한국산업기술대학 | 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법 |
JP4738322B2 (ja) * | 2006-11-30 | 2011-08-03 | 株式会社東芝 | 酸化物超電導体およびその製造方法 |
ES2302637B1 (es) * | 2006-12-14 | 2009-06-05 | Consejo Superior Investig. Cientificas | Material superconductor nanoestructurado tipo reba2cu3o7(re=tierra rara o ytrio) con una elevada densidad de centros de anclaje de vortices y su metodo de preparacion. |
KR100922371B1 (ko) | 2008-01-03 | 2009-10-19 | 한국기계연구원 | 초전도 박막 및 그 제조방법 |
DE102008004818B4 (de) * | 2008-01-17 | 2010-07-15 | Zenergy Power Gmbh | Nasschemisches Verfahren zur Herstellung eines Hochtemperatursupraleiters |
JP5172456B2 (ja) * | 2008-05-07 | 2013-03-27 | 株式会社東芝 | 酸化物超電導体の製造方法 |
JP5085436B2 (ja) * | 2008-06-04 | 2012-11-28 | 株式会社東芝 | 有機フッ素化合物の分析方法 |
US8865628B2 (en) * | 2009-12-09 | 2014-10-21 | National Institute Of Advanced Industrial Science And Technology | Solution for forming rare-earth superconductive film and production method thereof |
JP2013045727A (ja) * | 2011-08-25 | 2013-03-04 | Swcc Showa Cable Systems Co Ltd | テープ状re系酸化物超電導線材の製造方法 |
CN102569636B (zh) * | 2012-01-18 | 2014-02-19 | 西安理工大学 | 一种化学溶液法制备钆钡铜氧高温超导薄膜的方法 |
JP5622778B2 (ja) | 2012-03-23 | 2014-11-12 | 株式会社東芝 | 酸化物超電導体、及び、配向酸化物薄膜 |
JP5763251B2 (ja) * | 2014-08-12 | 2015-08-12 | 株式会社東芝 | 酸化物超電導体の製造方法 |
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US5416063A (en) * | 1987-04-10 | 1995-05-16 | At&T Corp. | Method of producing a layer of superconductive oxide |
US4866031A (en) * | 1987-06-09 | 1989-09-12 | E. I. Du Pont De Nemours And Company | Process for making 90 K superconductors from acetate precursor solutions |
US4983577A (en) * | 1987-12-22 | 1991-01-08 | General Motors Corporation | Metalorganic deposition of superconducting Yb-Ba-Cu-O thin films by rapid thermal annealing |
JPH01230405A (ja) | 1987-10-09 | 1989-09-13 | Mitsubishi Electric Corp | 酸化物超電導厚膜の製造方法 |
US4962086A (en) | 1988-06-08 | 1990-10-09 | International Business Machines Corporation | High Tc superconductor - gallate crystal structures |
FR2648802B1 (fr) * | 1989-06-22 | 1991-09-20 | Rhone Poulenc Chimie | Melanges deshydrates d'halogenures de terres rares et d'alcalino-terreux ou d'alcalins |
US5231074A (en) * | 1990-04-17 | 1993-07-27 | Massachusetts Institute Of Technology | Preparation of highly textured oxide superconducting films from mod precursor solutions |
JPH0710732B2 (ja) | 1991-06-28 | 1995-02-08 | 工業技術院長 | 超電導体の製造方法 |
US5480862A (en) * | 1993-07-30 | 1996-01-02 | Pirelli Cavi S.P.A. | Method for the preparation of precursors for superconductors and compounds thus obtained |
CN1182597C (zh) | 1997-06-18 | 2004-12-29 | 麻省理工学院 | 将金属氟氧化物转化为超导氧化物的受控转化 |
JP3507887B2 (ja) | 2000-09-01 | 2004-03-15 | 独立行政法人産業技術総合研究所 | 単結晶基板の表面にエピタキシャル薄膜を形成する方法 |
JP4822637B2 (ja) | 2000-10-31 | 2011-11-24 | 株式会社Adeka | 酸化物超電導用トリフルオロ酢酸金属塩水和物の製造方法 |
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2000
- 2000-09-05 JP JP2000269251A patent/JP3556586B2/ja not_active Expired - Lifetime
-
2001
- 2001-09-04 EP EP01120704A patent/EP1187231B1/en not_active Expired - Lifetime
- 2001-09-04 KR KR10-2001-0054116A patent/KR100417146B1/ko active IP Right Grant
- 2001-09-04 DK DK01120704T patent/DK1187231T3/da active
- 2001-09-04 DE DE60125114T patent/DE60125114T2/de not_active Expired - Lifetime
- 2001-09-05 CN CNB011326735A patent/CN1185660C/zh not_active Expired - Lifetime
- 2001-09-05 US US09/945,821 patent/US6586042B2/en not_active Expired - Lifetime
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2003
- 2003-05-20 US US10/441,224 patent/US6821930B2/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456508C (zh) * | 2004-07-30 | 2009-01-28 | 株式会社东芝 | 氧化物超导薄膜及其制备方法 |
CN100360470C (zh) * | 2006-04-30 | 2008-01-09 | 西安理工大学 | 钇钡铜氧超导膜的溶胶-凝胶制备方法 |
CN101747031B (zh) * | 2008-12-16 | 2012-07-18 | 北京有色金属研究总院 | 一种高温超导纳米复合薄膜及其制备方法 |
CN102443792A (zh) * | 2011-12-02 | 2012-05-09 | 西安理工大学 | Ybco超导薄膜的低氟溶液沉积及其热处理工艺 |
CN102443792B (zh) * | 2011-12-02 | 2013-06-05 | 西安理工大学 | Ybco超导薄膜的溶液沉积及其热处理工艺 |
Also Published As
Publication number | Publication date |
---|---|
US6821930B2 (en) | 2004-11-23 |
US20020086799A1 (en) | 2002-07-04 |
EP1187231B1 (en) | 2006-12-13 |
KR100417146B1 (ko) | 2004-02-05 |
JP3556586B2 (ja) | 2004-08-18 |
DE60125114D1 (de) | 2007-01-25 |
US20030198748A1 (en) | 2003-10-23 |
JP2002080297A (ja) | 2002-03-19 |
EP1187231A3 (en) | 2005-06-29 |
CN1185660C (zh) | 2005-01-19 |
DK1187231T3 (da) | 2007-04-10 |
DE60125114T2 (de) | 2007-07-05 |
KR20020019409A (ko) | 2002-03-12 |
US6586042B2 (en) | 2003-07-01 |
EP1187231A2 (en) | 2002-03-13 |
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