JP4738322B2 - 酸化物超電導体およびその製造方法 - Google Patents
酸化物超電導体およびその製造方法 Download PDFInfo
- Publication number
- JP4738322B2 JP4738322B2 JP2006324620A JP2006324620A JP4738322B2 JP 4738322 B2 JP4738322 B2 JP 4738322B2 JP 2006324620 A JP2006324620 A JP 2006324620A JP 2006324620 A JP2006324620 A JP 2006324620A JP 4738322 B2 JP4738322 B2 JP 4738322B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- cooh
- fluorine
- gel
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002887 superconductor Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 120
- 229910052731 fluorine Inorganic materials 0.000 claims description 91
- 239000011737 fluorine Substances 0.000 claims description 91
- 239000011248 coating agent Substances 0.000 claims description 86
- 238000000576 coating method Methods 0.000 claims description 86
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 43
- 239000001301 oxygen Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 38
- 229910021645 metal ion Inorganic materials 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 34
- 229910052799 carbon Inorganic materials 0.000 claims description 34
- 108010025899 gelatin film Proteins 0.000 claims description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000005416 organic matter Substances 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052788 barium Inorganic materials 0.000 claims description 10
- -1 promesium Chemical compound 0.000 claims description 10
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 150000002602 lanthanoids Chemical group 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 6
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 6
- VFRSADQPWYCXDG-LEUCUCNGSA-N ethyl (2s,5s)-5-methylpyrrolidine-2-carboxylate;2,2,2-trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.CCOC(=O)[C@@H]1CC[C@H](C)N1 VFRSADQPWYCXDG-LEUCUCNGSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- KGYUZRBIQCDOCN-UHFFFAOYSA-N 2-(2,2,3,3,4,4,5,5,6,6,7,7,7-tridecafluoroheptyl)oxirane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 KGYUZRBIQCDOCN-UHFFFAOYSA-N 0.000 claims description 2
- HMXSIEIEXLGIET-UHFFFAOYSA-N 2-(2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,9-heptadecafluorononyl)oxirane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 HMXSIEIEXLGIET-UHFFFAOYSA-N 0.000 claims description 2
- NSHDLZDDSBGOKN-UHFFFAOYSA-N 2-[2,2,3,3,4,4,5,5,6,7,7,7-dodecafluoro-6-(trifluoromethyl)heptyl]oxirane Chemical compound FC(F)(F)C(F)(C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 NSHDLZDDSBGOKN-UHFFFAOYSA-N 0.000 claims description 2
- PGFXOWRDDHCDTE-UHFFFAOYSA-N hexafluoropropylene oxide Chemical compound FC(F)(F)C1(F)OC1(F)F PGFXOWRDDHCDTE-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 3
- XDIQTPZOIIYCTR-GRFIIANRSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-4-hydroxy-3-phosphonooxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(3r)-3-hydroxy-2,2-dimethyl-4-oxo-4-[[3-oxo-3-[2-(3,3,3-trifluoro-2-oxopropyl)sulfanylethylamino]propyl]amino]butyl] hydrogen phosphate Chemical compound O[C@@H]1[C@H](OP(O)(O)=O)[C@@H](COP(O)(=O)OP(O)(=O)OCC(C)(C)[C@@H](O)C(=O)NCCC(=O)NCCSCC(=O)C(F)(F)F)O[C@H]1N1C2=NC=NC(N)=C2N=C1 XDIQTPZOIIYCTR-GRFIIANRSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 119
- 235000019000 fluorine Nutrition 0.000 description 86
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 83
- 238000000034 method Methods 0.000 description 77
- 239000000654 additive Substances 0.000 description 60
- 230000000996 additive effect Effects 0.000 description 48
- 238000010438 heat treatment Methods 0.000 description 40
- 238000001354 calcination Methods 0.000 description 26
- 238000010304 firing Methods 0.000 description 22
- 239000000843 powder Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 18
- 239000011259 mixed solution Substances 0.000 description 18
- 238000004458 analytical method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 238000000354 decomposition reaction Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 230000006698 induction Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 150000002222 fluorine compounds Chemical class 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 8
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 7
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000011066 ex-situ storage Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 6
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- LRMSQVBRUNSOJL-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)F LRMSQVBRUNSOJL-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 239000012086 standard solution Substances 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- YPJUNDFVDDCYIH-UHFFFAOYSA-N perfluorobutyric acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-N 0.000 description 2
- CXZGQIAOTKWCDB-UHFFFAOYSA-N perfluoropentanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CXZGQIAOTKWCDB-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 2
- KVLHRMQNRDJRKW-UHFFFAOYSA-N 2-(2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-henicosafluoroundecyl)oxirane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 KVLHRMQNRDJRKW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- UMDZPTZRSLRIAV-UHFFFAOYSA-L copper;2-fluoroacetate Chemical compound [Cu+2].[O-]C(=O)CF.[O-]C(=O)CF UMDZPTZRSLRIAV-UHFFFAOYSA-L 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 150000003746 yttrium Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
EB法は、電子ビームで超電導体に必須の金属を含む前駆体を堆積し、その後の熱処理(本焼)によりY系超電導体を形成する。本焼時にはフッ素の存在により擬似液相ネットワークを経て超電導層が成長すると予想される。この方法は、炭素を用いないため、得られる超電導体に残留炭素が全く存在せず、超電導特性を大きく劣化させることがない。しかし、EB法は製造コストが高いという問題がある。
P.M. Mankiewich, et al. Appl. Phys. Lett. 51, 1987, 1753-1755 T. Araki and I. Hirabayashi, Supercond. Sci. Technol. 16, 2003, R71-R94
本発明の他の態様に係る金属酸化フッ化物仮焼膜の製造方法は、イットリウムおよびランタノイド族(ただしセリウム、プラセオジウム、プロメシウム、ルテチウムを除く)からなる群より選択される少なくとも1種の金属Mと、バリウムと、銅とを原子比で1:2:3となるよう混合したフルオロカルボン酸塩のメタノール溶液に、フッ素/(フッ素+水素)が75〜96mol%である有機物を添加し、このとき金属イオン濃度が1.5mol/lである前記メタノール溶液に対して前記有機物の添加量を2.5〜20wt%として、前記金属イオン濃度に比例して前記有機物の添加量を調整してコーティング溶液を調製し、前記コーティング溶液を基板上にコーティングしてゲル膜を形成し、前記ゲル膜を仮焼することを特徴とする。
まず、図1を参照して、金属酢酸塩をフルオロカルボン酸と反応させて高純度溶液を調製する方法を説明する。図1における金属酢酸塩(a1)とは、金属Mの酢酸塩、酢酸バリウム、および酢酸銅の総称である。各々の金属酢酸塩(a1)を水(b)に溶解し、フルオロカルボン酸(a2)を混合する。これらの溶液を、金属イオンがモル比で1:2:3となるように混合して反応させ(c)、減圧下で不純物を揮散させて精製し(d)、不純物入り粉末またはゲル(e)を得る。
CF3COO-Cu-OCOCF3 + H2O → CF3COO-Cu-OH + CF3COOH。
(Ba-O-F:アモルファス) + H2O → BaO + HF↑
(1/2)M2O3 + 2BaO + 3CuO → MBa2Cu3O6
(9)時刻tb4から雰囲気を乾燥Ar/O2ガスに切り替える。乾燥ガスに切り替える理由は、tb4までに形成された酸化物MBa2Cu3O6は800℃付近の高温では水蒸気に安定であるが、600℃付近では水蒸気により分解するためである。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
Sm(OCOCH3)3水和物をイオン交換水に溶解し、反応等モル量のCF3CF2COOHと混合して攪拌した。この溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、黄色粉末を得た。この粉末をメタノールに溶解して溶液4PSSm(presolution Sm)を得た。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
[02]F(CF2)8CH2CH2OH,
[03]F(CF2)10CH2CH2OH,
[04]C3F7OCF(CF3)CF2OCF(CF3)CH2OH,
[05](CF3)2CF(CF2)4CH2CH2OH,
[06](CF3)2CF(CF2)6CH2CH2OH,
[07]H(CF2)6CH2OH,
[08]H(CF2)8CH2OH,
[09]F(CF2)4COOH,
[10]F(CF2)5COOH,
[11]F(CF2)6COOH,
[12]F(CF2)7COOH,
[13]F(CF2)8COOH,
[14]F(CF2)9COOH,
[15]F(CF2)10COOH,
[16]F(CF2)3O[CF(CF3)CF2O]2CF(CF3)COF,
[17]F(CF2)3O[CF(CF3)CF2O]3CF(CF3)COF,
[18]H(CF2)4COOH,
[19]H(CF2)6COOH,
[20]H(CF2)8COOH,
[21]HOOC(CF2)3COOH,
[22]HOOC(CF2)4COOH,
[23]HOOC(CF2)6COOH,
[24]HOOC(CF2)7COOH,
[25](CF3)2C(CH3)COOH,
[26](CF3)2C(CH3)COF,
[27]ヘキサフルオロエポキシプロパン,
[28]3−パーフルオロヘキシル−1,2−エポキシプロパン,
[29]3−パーフルオロオクチル−1,2−エポキシプロパン,
[30]3−パーフルオロデシル−1,2−エポキシプロパン,
[31]3−(パーフルオロ−5−メチルヘキシル)−1,2−エポキシプロパン,
[32]3−(パーフルオロ−7−メチルヘキシル)−1,2−エポキシプロパン,
[33]CF3CH=CF2,
[34]F(CF2)4CH=CH2,
[35]F(CF2)6CH=CH2,
[36]F(CF2)8CH=CH2,
[37]F(CF2)10CH=CH2。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
[08]H(CF2)8CH2OH,
[09]F(CF2)4COOH,
[10]F(CF2)5COOH,
[11]F(CF2)6COOH,
[13]F(CF2)8COOH,
[15]F(CF2)10COOH,
[18]H(CF2)4COOH,
[19]H(CF2)6COOH,
[20]H(CF2)8COOH。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
[02]F(CF2)5COOH,
[03]F(CF2)6COOH,
[04]F(CF2)7COOH,
[05]F(CF2)8COOH,
[06]F(CF2)9COOH,
[07]F(CF2)10COOH,
[08]HOOC(CF2)4COOH,
[09]HOOC(CF2)6COOH,
[10]HOOC(CF2)7COOH,
[11](CF3)2C(CH3)COOH,
[12](CF3)2C(CH3)COF。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
Y(OCOCH3)3、Ba(OCOCH3)2、Cu(OCOCH3)2の各水和物の粉末を、それぞれイオン交換水に溶解し、それぞれ反応等モル量のCF3COOHと混合して攪拌した。これらの溶液を金属イオンがモル比で1:2:3となるように混合して混合溶液を得た。得られた混合溶液をナス型フラスコに入れ、ロータリーエバポレータを用いて減圧下で12時間にわたって反応および精製を行い、半透明青色のゲルまたはゾルを得た。
Claims (9)
- 基板上に、イットリウムおよびランタノイド族(ただしセリウム、プラセオジウム、プロメシウム、ルテチウムを除く)からなる群より選択される少なくとも1種の金属Mと、バリウムと、銅とを1:2:3の原子比で含む酸化物の膜として形成され、平均膜厚が350nm以上であり、残留炭素および残留フッ素を含み、膜表面から100nm以内の部分および基板界面から膜厚の10%の部分を除き、前記膜を膜表面または基板との界面から厚さ10nm毎に複数の領域に区分して分析したとき、互いに隣接する2つの領域における銅、フッ素、酸素および炭素の原子比が1/5倍から5倍の範囲内であり、基板の端部から2mm以内の領域を除いた領域に、幅0.1mm以上長さ1mm以上のクラックがないことを特徴とする酸化物超電導体。
- 平均膜厚が600nm以上であることを特徴とする請求項1に記載の酸化物超電導体。
- イットリウムおよびランタノイド族(ただしセリウム、プラセオジウム、プロメシウム、ルテチウムを除く)からなる群より選択される少なくとも1種の金属Mと、バリウムと、銅とを原子比で1:2:3となるよう混合したフルオロカルボン酸塩のメタノール溶液に、フッ素/(フッ素+水素)が75〜96mol%である有機物を添加し、このとき金属イオン濃度が1.5mol/lである前記メタノール溶液に対して前記有機物の添加量を2.5〜20wt%として、前記金属イオン濃度に比例して前記有機物の添加量を調整してコーティング溶液を調製し、
前記コーティング溶液を基板上にコーティングしてゲル膜を形成し、
前記ゲル膜を仮焼、本焼および酸素アニールして酸化物超電導体の膜を形成する
ことを特徴とする酸化物超電導体の製造方法。 - 前記フルオロカルボン酸塩がトリフルオロ酢酸塩を含むことを特徴とする請求項3に記載の酸化物超電導体の製造方法。
- 前記有機物がフルオロカルボン酸基を含むことを特徴とする請求項3に記載の酸化物超電導体の製造方法。
- 前記有機物が、F(CF2)3OCF(CF3)CH2OH,F(CF2)8CH2CH2OH,F(CF2)10CH2CH2OH,C3F7OCF(CF3)CF2OCF(CF3)CH2OH,(CF3)2CF(CF2)4CH2CH2OH,(CF3)2CF(CF2)6CH2CH2OH,H(CF2)6CH2OH,H(CF2)8CH2OH,F(CF2)4COOH,F(CF2)5COOH,F(CF2)6COOH,F(CF2)7COOH,F(CF2)8COOH,F(CF2)9COOH,F(CF2)10COOH,F(CF2)3O[CF(CF3)CF2O]2CF(CF3)COF,F(CF2)3O[CF(CF3)CF2O]3CF(CF3)COF,H(CF2)4COOH,H(CF2)6COOH,H(CF2)8COOH,HOOC(CF2)3COOH,HOOC(CF2)4COOH,HOOC(CF2)6COOH,HOOC(CF2)7COOH,(CF3)2C(CH3)COOH,(CF3)2C(CH3)COF,ヘキサフルオロエポキシプロパン,3−パーフルオロヘキシル−1,2−エポキシプロパン,3−パーフルオロオクチル−1,2−エポキシプロパン,3−パーフルオロデシル−1,2−エポキシプロパン,3−(パーフルオロ−5−メチルヘキシル)−1,2−エポキシプロパン,3−(パーフルオロ−7−メチルヘキシル)−1,2−エポキシプロパン,CF3CH=CF2,F(CF2)4CH=CH2,F(CF2)6CH=CH2,F(CF2)8CH=CH2,およびF(CF2)10CH=CH2からなる群より選択されることを特徴とする請求項3に記載の酸化物超電導体の製造方法。
- 前記有機物を、2種類以上混合して用いることを特徴とする請求項6に記載の酸化物超電導体の製造方法。
- コーティング溶液に添加される有機物に含まれる前記フルオロカルボン酸基に、少なくとも1つの水素が結合していることを特徴とする請求項5に記載の酸化物超電導体の製造方法。
- イットリウムおよびランタノイド族(ただしセリウム、プラセオジウム、プロメシウム、ルテチウムを除く)からなる群より選択される少なくとも1種の金属Mと、バリウムと、銅とを原子比で1:2:3となるよう混合したフルオロカルボン酸塩のメタノール溶液に、フッ素/(フッ素+水素)が75〜96mol%である有機物を添加し、このとき金属イオン濃度が1.5mol/lである前記メタノール溶液に対して前記有機物の添加量を2.5〜20wt%として、前記金属イオン濃度に比例して前記有機物の添加量を調整してコーティング溶液を調製し、
前記コーティング溶液を基板上にコーティングしてゲル膜を形成し、
前記ゲル膜を仮焼する
ことを特徴とする金属酸化フッ化物仮焼膜の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006324620A JP4738322B2 (ja) | 2006-11-30 | 2006-11-30 | 酸化物超電導体およびその製造方法 |
US11/857,089 US7833941B2 (en) | 2006-11-30 | 2007-09-18 | Oxide superconductor and method for producing the same |
US12/900,024 US8389045B2 (en) | 2006-11-30 | 2010-10-07 | Method for producing oxide superconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006324620A JP4738322B2 (ja) | 2006-11-30 | 2006-11-30 | 酸化物超電導体およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008137833A JP2008137833A (ja) | 2008-06-19 |
JP4738322B2 true JP4738322B2 (ja) | 2011-08-03 |
Family
ID=39498825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006324620A Active JP4738322B2 (ja) | 2006-11-30 | 2006-11-30 | 酸化物超電導体およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7833941B2 (ja) |
JP (1) | JP4738322B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2704224A1 (en) | 2012-08-31 | 2014-03-05 | Kabushiki Kaisha Toshiba | Method for producing oxide superconductor, and oxide superconductor |
WO2017046974A1 (en) | 2015-09-16 | 2017-03-23 | Kabushiki Kaisha Toshiba | Oxide superconductor and method for manufacturing the same |
US10916361B2 (en) | 2016-02-26 | 2021-02-09 | Kabushiki Kaisha Toshiba | Oxide superconductor and method for manufacturing the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5017161B2 (ja) * | 2008-03-27 | 2012-09-05 | 株式会社東芝 | 酸化物超電導体 |
JP5562615B2 (ja) * | 2009-11-24 | 2014-07-30 | 公益財団法人国際超電導産業技術研究センター | 希土類系酸化物超電導線材の製造方法 |
JP5591557B2 (ja) * | 2010-02-16 | 2014-09-17 | 昭和電線ケーブルシステム株式会社 | 酸化物超電導線材の製造方法及び製造装置 |
US8428671B2 (en) † | 2010-03-31 | 2013-04-23 | American Superconductor Corporation | Thick oxide film by single coating |
JP2012146418A (ja) * | 2011-01-07 | 2012-08-02 | Sumitomo Electric Ind Ltd | 酸化物超電導線材とその製造方法 |
JP5622778B2 (ja) * | 2012-03-23 | 2014-11-12 | 株式会社東芝 | 酸化物超電導体、及び、配向酸化物薄膜 |
JP6212241B2 (ja) * | 2015-03-24 | 2017-10-11 | 株式会社東芝 | 超電導体及びその製造方法 |
JP6359740B2 (ja) * | 2017-09-11 | 2018-07-18 | 株式会社東芝 | 超電導体 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002080297A (ja) * | 2000-09-05 | 2002-03-19 | Toshiba Corp | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
JP2003257259A (ja) * | 2002-03-05 | 2003-09-12 | Toshiba Corp | 超電導層及びその製造方法 |
JP2006044963A (ja) * | 2004-07-30 | 2006-02-16 | Toshiba Corp | 酸化物超電導体およびその製造方法 |
JP2006083022A (ja) * | 2004-09-16 | 2006-03-30 | Toshiba Corp | 酸化物超電導体およびその製造方法 |
JP2007165153A (ja) * | 2005-12-14 | 2007-06-28 | Internatl Superconductivity Technology Center | 厚膜テープ状re系(123)超電導体の製造方法。 |
JP2008050190A (ja) * | 2006-08-23 | 2008-03-06 | Internatl Superconductivity Technology Center | テープ状Re系(123)超電導体の製造方法。 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4223076B2 (ja) * | 1997-06-18 | 2009-02-12 | マサチューセッツ・インスティテュート・オブ・テクノロジー | 金属オキシフッ化物の超伝導性酸化物への制御された変換 |
US6673387B1 (en) * | 2000-07-14 | 2004-01-06 | American Superconductor Corporation | Control of oxide layer reaction rates |
US20020056401A1 (en) | 2000-10-23 | 2002-05-16 | Rupich Martin W. | Precursor solutions and methods of using same |
KR100529602B1 (ko) * | 2003-07-18 | 2005-11-17 | 한국산업기술대학교 | 희토류원소계 초전도 산화물을 이용하는 유기금속증착용 전구용액 제조방법 및 유기금속증착법에 의한 박막형 초전도체 제조방법 |
EP1805817B1 (en) * | 2004-10-01 | 2016-11-16 | American Superconductor Corporation | Thick superconductor films with improved performance |
-
2006
- 2006-11-30 JP JP2006324620A patent/JP4738322B2/ja active Active
-
2007
- 2007-09-18 US US11/857,089 patent/US7833941B2/en active Active
-
2010
- 2010-10-07 US US12/900,024 patent/US8389045B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002080297A (ja) * | 2000-09-05 | 2002-03-19 | Toshiba Corp | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
JP2003257259A (ja) * | 2002-03-05 | 2003-09-12 | Toshiba Corp | 超電導層及びその製造方法 |
JP2006044963A (ja) * | 2004-07-30 | 2006-02-16 | Toshiba Corp | 酸化物超電導体およびその製造方法 |
JP2006083022A (ja) * | 2004-09-16 | 2006-03-30 | Toshiba Corp | 酸化物超電導体およびその製造方法 |
JP2007165153A (ja) * | 2005-12-14 | 2007-06-28 | Internatl Superconductivity Technology Center | 厚膜テープ状re系(123)超電導体の製造方法。 |
JP2008050190A (ja) * | 2006-08-23 | 2008-03-06 | Internatl Superconductivity Technology Center | テープ状Re系(123)超電導体の製造方法。 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2704224A1 (en) | 2012-08-31 | 2014-03-05 | Kabushiki Kaisha Toshiba | Method for producing oxide superconductor, and oxide superconductor |
WO2017046974A1 (en) | 2015-09-16 | 2017-03-23 | Kabushiki Kaisha Toshiba | Oxide superconductor and method for manufacturing the same |
US10916361B2 (en) | 2016-02-26 | 2021-02-09 | Kabushiki Kaisha Toshiba | Oxide superconductor and method for manufacturing the same |
US11501899B2 (en) | 2016-02-26 | 2022-11-15 | Kabushiki Kaisha Toshiba | Oxide superconductor and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20080139393A1 (en) | 2008-06-12 |
US8389045B2 (en) | 2013-03-05 |
JP2008137833A (ja) | 2008-06-19 |
US7833941B2 (en) | 2010-11-16 |
US20110172103A1 (en) | 2011-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4738322B2 (ja) | 酸化物超電導体およびその製造方法 | |
Araki et al. | Review of a chemical approach to YBa2Cu3O7− x-coated superconductors—metalorganic deposition using trifluoroacetates | |
JP4234424B2 (ja) | 前駆体溶液およびその使用方法 | |
RU2414769C2 (ru) | Сверхпроводящий провод | |
JP5057784B2 (ja) | ナノドットフラックス・ピン止めセンターを有する酸化物膜 | |
JP4041672B2 (ja) | 接合高温超伝導性被覆テープ | |
JP3556586B2 (ja) | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 | |
US7919434B2 (en) | Oxide superconducting film and method of preparing the same | |
JP4208806B2 (ja) | 酸化物超電導体の製造方法 | |
JP3725085B2 (ja) | 超電導層及びその製造方法 | |
JP5757718B2 (ja) | 酸化物超電導線材の製造方法 | |
JP5649626B2 (ja) | 酸化物超電導体の製造方法 | |
JP2003300726A (ja) | テープ状酸化物超電導体及びその製造方法 | |
JP4891505B2 (ja) | 多層体を作製するための方法及び組成物 | |
JP2011510171A (ja) | 高温超伝導体を製造するための湿式化学的方法 | |
JP5172456B2 (ja) | 酸化物超電導体の製造方法 | |
Araki et al. | A large volume reduction and calcining profile for large-area YBa2Cu3O7− x film by metalorganic deposition using trifluoroacetates | |
JP2011201712A (ja) | 配向酸化物膜の製造方法および配向酸化物膜、酸化物超電導体 | |
JP2010135134A (ja) | Re123超電導薄膜線材の製造方法およびre123超電導薄膜線材 | |
WO2013153651A1 (ja) | 酸化物超電導薄膜線材とその製造方法 | |
JP2012113860A (ja) | 酸化物超電導薄膜線材とその製造方法 | |
JP2011195435A (ja) | 超電導膜の製造方法並びに該方法により得られる仮焼成膜及び本焼成膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110405 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110426 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4738322 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140513 Year of fee payment: 3 |