KR100851620B1 - 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법 - Google Patents
유기금속증착법에 의한 박막형 산화물 초전도체 제조방법 Download PDFInfo
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- KR100851620B1 KR100851620B1 KR1020060111997A KR20060111997A KR100851620B1 KR 100851620 B1 KR100851620 B1 KR 100851620B1 KR 1020060111997 A KR1020060111997 A KR 1020060111997A KR 20060111997 A KR20060111997 A KR 20060111997A KR 100851620 B1 KR100851620 B1 KR 100851620B1
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- heat treatment
- thin film
- oxide
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000002243 precursor Substances 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 15
- 239000002887 superconductor Substances 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 238000001354 calcination Methods 0.000 claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 9
- 229910052786 argon Inorganic materials 0.000 claims abstract description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 22
- 150000002902 organometallic compounds Chemical class 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 claims description 11
- 239000007858 starting material Substances 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 9
- 238000004090 dissolution Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 229960005215 dichloroacetic acid Drugs 0.000 claims description 6
- 235000015110 jellies Nutrition 0.000 claims description 6
- 239000008274 jelly Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 DCA metal compound Chemical class 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
- H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (4)
- 출발원료를 금속염 및 금속산화물로 하고, 전기 출발원료를 유기산과 물에 혼합·교반하고, 가열하여 용해시키는 용해공정(S10)과; 상기 출발원료가 완전히 용해되어 용액이 맑아지면 상기 용액이 점성이 있는 젤리상태가 될 때까지 용매를 증발시키는 증발공정(S20)과; 상기 출발원료에서 얻어지는 젤리상태의 유기금속화합물을 유기용매에 녹여서 초전도 산화물 박막 제조용 전구용액을 얻는 전구용액수득공정(S30)과; 유기금속화합물 전구용액을 기판 위에 도포하는 도포공정(S40)과; 염소를 포함하는 유기금속화합물 박막이 도포된 것을 열처리 조건(승온속도, 변환온도, PH2O, 가스 유량, 산소 분압)을 조절함으로써 RE-Ba-Cu 산화물로 변환하는 변환공정(S50)과; 최종 산소열처리를 통해 산화물초전도체 박막으로 변환시켜 77K에서 자장이 가해지지 않은 상태에서 통전 임계전류밀도가 1x105 A/㎠ 이상인 산화물초전도박막을 제조하는 열처리공정(S60)을 포함하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법에 있어서,상기 금속염과 금속산화물을 유기산과 물에 혼합·교반하고, 가열하여 용해시키는 용해공정(S10)에서 상기 유기산은 dichloroacetic acid를 사용하고,상기 RE-Ba-Cu 산화물로 변환하는 변환공정(S50)에서의 열처리 조건은 수증기가 포함된 산소 분위기에서 가스유량은 300~5000sccm, 수증기함량은 4~40%를 유지하면서 100℃에서 600℃까지 0.1~300℃/min 승온속도로 가열 후 노냉하는 하소열처리공정(S51)과; 상기 하소열처리된 산화물전구체박막을 산소 200~3000ppm을 포함하는 아르곤 가스에 4~40%의 수증기가 포함된 분위기에서 740℃~810℃ 범위에서 열처리하는 변환열처리공정(S52)의 2단계로 진행되는 것을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 1항에 있어서,상기 유기금속화합물을 유기용매에 녹여서 초전도 산화물 박막 제조용 전구용액을 얻는 전구용액수득공정(S30)에서의 상기 유기용매는 2-methoxyethanol 또는 methanol을 사용하는 것을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 삭제
- 제 1항에 있어서,상기 유기금속화합물 전구용액을 기판 위에 도포하는 도포공정(S40)에서 상기 기판은 단결정 산화물이나 금속 위에 이축배향된 산화물층이 도포된 기판을 사용하는 것을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
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KR100851620B1 true KR100851620B1 (ko) | 2008-08-12 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002080297A (ja) | 2000-09-05 | 2002-03-19 | Toshiba Corp | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
US6486100B1 (en) | 1997-09-16 | 2002-11-26 | Ut-Battelle, Llc | Method for preparing preferentially oriented, high temperature superconductors using solution reagents |
JP2003034527A (ja) | 2001-05-15 | 2003-02-07 | Internatl Superconductivity Technology Center | 厚膜テープ状酸化物超電導体及びその製造方法 |
KR20050010193A (ko) * | 2003-07-18 | 2005-01-27 | 한국산업기술대학교 | 초전도 산화물을 이용하는 유기금속증착용 전구용액제조방법 및 유기금속증착법에 의한 박막형 초전도체제조방법 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6486100B1 (en) | 1997-09-16 | 2002-11-26 | Ut-Battelle, Llc | Method for preparing preferentially oriented, high temperature superconductors using solution reagents |
JP2002080297A (ja) | 2000-09-05 | 2002-03-19 | Toshiba Corp | 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法 |
JP2003034527A (ja) | 2001-05-15 | 2003-02-07 | Internatl Superconductivity Technology Center | 厚膜テープ状酸化物超電導体及びその製造方法 |
KR20050010193A (ko) * | 2003-07-18 | 2005-01-27 | 한국산업기술대학교 | 초전도 산화물을 이용하는 유기금속증착용 전구용액제조방법 및 유기금속증착법에 의한 박막형 초전도체제조방법 |
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