CN1319891A - 防止低介电常数材料中的铜互连被氧化的结构 - Google Patents

防止低介电常数材料中的铜互连被氧化的结构 Download PDF

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Publication number
CN1319891A
CN1319891A CN01111894A CN01111894A CN1319891A CN 1319891 A CN1319891 A CN 1319891A CN 01111894 A CN01111894 A CN 01111894A CN 01111894 A CN01111894 A CN 01111894A CN 1319891 A CN1319891 A CN 1319891A
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CN
China
Prior art keywords
insulator
steel structure
layer
conductor
copper
Prior art date
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Pending
Application number
CN01111894A
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English (en)
Chinese (zh)
Inventor
V·J·麦加海
E·N·莱维尼
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International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1319891A publication Critical patent/CN1319891A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
CN01111894A 2000-03-23 2001-03-22 防止低介电常数材料中的铜互连被氧化的结构 Pending CN1319891A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53385100A 2000-03-23 2000-03-23
US09/533851 2000-03-23

Publications (1)

Publication Number Publication Date
CN1319891A true CN1319891A (zh) 2001-10-31

Family

ID=24127691

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01111894A Pending CN1319891A (zh) 2000-03-23 2001-03-22 防止低介电常数材料中的铜互连被氧化的结构

Country Status (5)

Country Link
JP (1) JP2001313296A (ja)
KR (1) KR20010092679A (ja)
CN (1) CN1319891A (ja)
GB (1) GB2365215A (ja)
TW (1) TW478101B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293622C (zh) * 2001-12-26 2007-01-03 株式会社东芝 半导体器件及其制造方法
CN100356562C (zh) * 2003-09-30 2007-12-19 三洋电机株式会社 半导体装置及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
CN1720490B (zh) 2002-11-15 2010-12-08 应用材料有限公司 用于控制具有多变量输入参数的制造工艺的方法和系统
US7244674B2 (en) 2004-04-27 2007-07-17 Agency For Science Technology And Research Process of forming a composite diffusion barrier in copper/organic low-k damascene technology
US8012872B2 (en) 2004-11-08 2011-09-06 Nxp B.V. Planarising damascene structures
US8884441B2 (en) 2013-02-18 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Process of ultra thick trench etch with multi-slope profile
US9368448B2 (en) * 2013-12-20 2016-06-14 Applied Materials, Inc. Metal-containing films as dielectric capping barrier for advanced interconnects

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69127037T2 (de) * 1990-08-01 1998-02-12 Ibm Kupfer-Germanium Verbindungen, die bei Niedrigtemperatur hergestellt werden können
EP0917737A1 (en) * 1997-01-16 1999-05-26 Koninklijke Philips Electronics N.V. Semiconductor device provided with a metallization with a barrier layer comprising at least titanium, tungsten, or nitrogen, and method of manufacturing same
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6015749A (en) * 1998-05-04 2000-01-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293622C (zh) * 2001-12-26 2007-01-03 株式会社东芝 半导体器件及其制造方法
CN100356562C (zh) * 2003-09-30 2007-12-19 三洋电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
TW478101B (en) 2002-03-01
KR20010092679A (ko) 2001-10-26
GB0101254D0 (en) 2001-02-28
JP2001313296A (ja) 2001-11-09
GB2365215A (en) 2002-02-13

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