GB0101254D0 - Structure for protecting copper interconnects in low dielectric constant materials from oxidation - Google Patents
Structure for protecting copper interconnects in low dielectric constant materials from oxidationInfo
- Publication number
- GB0101254D0 GB0101254D0 GBGB0101254.1A GB0101254A GB0101254D0 GB 0101254 D0 GB0101254 D0 GB 0101254D0 GB 0101254 A GB0101254 A GB 0101254A GB 0101254 D0 GB0101254 D0 GB 0101254D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- oxidation
- dielectric constant
- low dielectric
- constant materials
- copper interconnects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53385100A | 2000-03-23 | 2000-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0101254D0 true GB0101254D0 (en) | 2001-02-28 |
GB2365215A GB2365215A (en) | 2002-02-13 |
Family
ID=24127691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0101254A Withdrawn GB2365215A (en) | 2000-03-23 | 2001-01-18 | Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2001313296A (en) |
KR (1) | KR20010092679A (en) |
CN (1) | CN1319891A (en) |
GB (1) | GB2365215A (en) |
TW (1) | TW478101B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US6879046B2 (en) | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
JP3648480B2 (en) * | 2001-12-26 | 2005-05-18 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US7272459B2 (en) | 2002-11-15 | 2007-09-18 | Applied Materials, Inc. | Method, system and medium for controlling manufacture process having multivariate input parameters |
JP4266901B2 (en) * | 2003-09-30 | 2009-05-27 | 三洋電機株式会社 | Semiconductor device and manufacturing method thereof |
US7244674B2 (en) | 2004-04-27 | 2007-07-17 | Agency For Science Technology And Research | Process of forming a composite diffusion barrier in copper/organic low-k damascene technology |
JP2008519450A (en) * | 2004-11-08 | 2008-06-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Method for manufacturing damascene structure on substrate, method for manufacturing integrated circuit, and semiconductor device manufactured by these methods |
US8884441B2 (en) | 2013-02-18 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process of ultra thick trench etch with multi-slope profile |
US9368448B2 (en) * | 2013-12-20 | 2016-06-14 | Applied Materials, Inc. | Metal-containing films as dielectric capping barrier for advanced interconnects |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0472804B1 (en) * | 1990-08-01 | 1997-07-30 | International Business Machines Corporation | Copper germanium compounds capable of being produced at low temperature |
JP2000507052A (en) * | 1997-01-16 | 2000-06-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Semiconductor device provided with metallized layer containing at least titanium, tungsten or nitrogen and method for manufacturing the same |
US5913147A (en) * | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US6015749A (en) * | 1998-05-04 | 2000-01-18 | Taiwan Semiconductor Manufacturing Company | Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure |
-
2000
- 2000-12-29 TW TW089128210A patent/TW478101B/en not_active IP Right Cessation
-
2001
- 2001-01-18 GB GB0101254A patent/GB2365215A/en not_active Withdrawn
- 2001-03-02 KR KR1020010010781A patent/KR20010092679A/en not_active Application Discontinuation
- 2001-03-21 JP JP2001081508A patent/JP2001313296A/en active Pending
- 2001-03-22 CN CN01111894A patent/CN1319891A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2001313296A (en) | 2001-11-09 |
GB2365215A (en) | 2002-02-13 |
KR20010092679A (en) | 2001-10-26 |
CN1319891A (en) | 2001-10-31 |
TW478101B (en) | 2002-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |