CN1282986C - 一种在使用下游等离子体的绝缘蚀刻器中的改进的抗蚀剂剥离 - Google Patents
一种在使用下游等离子体的绝缘蚀刻器中的改进的抗蚀剂剥离 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 19
- 238000011065 in-situ storage Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims description 65
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000004140 cleaning Methods 0.000 abstract description 7
- 210000002381 plasma Anatomy 0.000 description 88
- 229920000642 polymer Polymers 0.000 description 13
- 238000001020 plasma etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
一种实现介质刻蚀、刻蚀掩膜剥离、和刻蚀腔体清洗的方法和设备。在刻蚀腔体内放入晶片。在刻蚀腔体内,使用一种由原位等离子体装置产生的原位等离子体对晶片实现介质刻蚀。使用一种由与刻蚀腔体连接的远程等离子体装置产生的远程等离子体剥离刻蚀掩膜。从刻蚀腔体取出晶片,或使用原位等离子体或使用远程等离子体来清洗刻蚀腔体。在没有使用约束环的刻蚀腔体中,用加热器加热刻蚀腔体壁来提供改进的清洗。
Description
发明领域
本发明涉及半导体器件的制造。更准确地说,本发明涉及介质材料刻蚀和抗蚀剂剥离的改进技术。
发明背景
在一些半导体器件的制造中,可以用等离子体刻蚀系统刻蚀介质层。这种等离子体刻蚀系统可以是高浓度等离子体系统,例如电感性或ECR系统,或者中等浓度等离子体系统,例如电容性系统。高浓度等离子体蚀刻器能很好的分解气体以便通过给腔体内通氧气来清洗腔体壁。可以通过等离子体产生的热、等离子体产生的UV辐射、和等离子体引起的大量分解来进行这种清洗。
中等浓度等离子体刻蚀系统,例如电容性等离子体系统,可以用于氧化物刻蚀。在这种中等浓度等离子体刻蚀系统中通常使用化学聚合物。这种中等浓度等离子体刻蚀系统通常会在腔体壁上生成聚合物淀积。这样的系统通常允许在腔体壁上生成聚合物淀积,然后用湿法清洗去掉聚合物淀积。在中等浓度等离子体系统中通常需要这种湿法清洗,因为这种系统没有进行充分的分解,也没有足够的等离子体能量接触腔体壁以实现令人满意的聚合物清洗。当腔体壁仅仅被部分清洗且聚合物没有被令人满意地去掉时,有时新的聚合物就不能很牢固地粘在可能产生部分聚合物的腔体壁上,而这部分将成为附加的污染源。
使用封闭等离子体的等离子体刻蚀系统,例如由Lenz等人在美国申请的于1996年七月九日公布的专利5,534,751“使用封闭等离子体的等离子体刻蚀设备”中所揭示的设备,通常将等离子体限制在约束环内,该约束环使等离子体保持在远离腔体壁的封闭区域内。在封闭区域内保持的等离子体通常在邻近约束环处提供足够浓度和足够热量的等离子体以清洗约束环。
很清楚,给CVD设备提供通常用来清洗CVD腔体的远程等离子体源。通常这种等离子体设备使用氟的化学性质。这种CVD设备用于气相淀积。
很清楚,在剥离腔体内使用远程等离子体源,剥离腔体通常使用远地产生的等离子体来剥离刻蚀掩膜。
根据上述内容,通过中等浓度等离子体系统产生的等离子体浓度不足以充分清洗腔体壁,因此希望在中等浓度等离子体系统中能有一种装置用来提供充分清洗腔体壁的等离子体。
发明内容
在一个实施例中,本发明涉及一种中等浓度绝缘等离子体刻蚀系统,它具有用以提供等离子体系统清洗并且有可能允许在刻蚀系统内进行剥离的附加远程等离子体源。
在第二个实施例中,本发明涉及一种中等浓度绝缘等离子体系统,它具有附加的远程等离子体源和用来加热腔体壁的加热器以便对腔体壁进行清洗。
在第三个实施例中,本发明涉及一种封闭的中等浓度绝缘等离子体系统,它具有用来提高原位剥离率的附加远程等离子体源。
本发明的各方面特征将要在下面的本发明的详细描述中结合附图做更加详细地描述。
附图说明
结合附图的图形通过实例阐述本发明,但本发明不局限于此,其中相同标号表示相同部分,其中:
图1是一种刻蚀腔体的示意图。
图2是使用图1所示刻蚀腔体过程的流程图。
图3是另一种刻蚀腔体的示意图。
图4是使用图3所示刻蚀腔体过程的流程图。
优选实施例描述
现在,本发明将要结合如附图所示的一些优选实施例作详细描述。在下面的描述中,提出多个具体细节以便对本发明有全面的理解。然而,本领域内的技术人员都会明白,本发明无需这些具体细节的一些或全部就可以实现。在其他例子中,众所周知的工艺步骤和/或结构没有详细描述以免使本发明含糊不清。
为便于讨论,图1示出了描述本发明优选实施例的刻蚀腔体10的示意图。刻蚀腔体10包括一个接地的腔体壁12,一个与射频能量源16连接的静电夹盘14,一个位于连接蚀刻剂气体源20的刻蚀腔体10的顶部的蚀刻剂气体分配系统18,一些靠近且包围腔体壁12的加热器22,和一个与剥离气体源25连接的远程等离子体源24。腔体壁12可以是用作阳极的铝或导电陶瓷。
图2是在本发明优选实施例中所用的刻蚀腔体的工作流程图。晶片26安装在刻蚀腔体10内靠近底部的静电夹盘14上(步骤201)。晶片26有一个介质层28,例如二氧化硅氧化物层或氮化物层,其中部分介质层28被抗蚀剂掩膜30覆盖而部分介质层28没有被抗蚀剂掩膜30覆盖。
接下来刻蚀腔体10刻蚀掉介质层28中的没有被抗蚀剂掩膜30覆盖的部分(步骤202)。这是通过往刻蚀腔体10内通入蚀刻剂气体,使刻蚀腔体内部的压力达到20-200毫托来实现的。在本发明的优选实施例中,蚀刻剂气体包括具有通用分子式CyFx的碳氟化合物气体和氧气。在先有技术中已经知道所用蚀刻剂气体的剂量。蚀刻剂气体源20经过在刻蚀腔体10顶部的蚀刻剂气体分配系统18提供蚀刻剂气体。射频能量源16给静电夹盘14提供射频信号,在静电夹盘14和接地的腔体壁12之间产生射频波,它以静电夹盘14作为阴极而以腔体壁12作为阳极激励蚀刻剂气体。被射频波激励的蚀刻剂气体分解成离子,在腔体内部生成等离子体并且围住晶片26。因为晶片位于等离子体内,介质层28没有被抗蚀剂掩膜30覆盖的部分就被刻蚀掉。因为腔体壁12,静电夹盘14,能量源16,蚀刻剂气体分配系统18,和蚀刻剂气体源20在晶片周围形成等离子体且维持着等离子体,所以这些部分就提供了原位等离子体。刻蚀处理的结果是在腔体壁12上生成了由抗蚀剂掩膜30和碳氟化合物蚀刻剂气体产生的聚合物的残余物32。当充分刻蚀介质层28时,通过停止产生原位等离子体来停止刻蚀工序(步骤202)。
示出的远程等离子体源24与腔体壁12连接。远程等离子体源24可以放置在刻蚀腔体10周围的其他位置。远程等离子体源24和腔体10内部之间的入口必须足够大以使得在远程等离子体源24内生成的充足的氧原子团可以无损失的从远程等离子体源24通入到腔体10的内部。远程等离子体源24可以使用微波或者感应放电或者一些其他高浓度的可分解的远程源。这种远程源的一个例子就是由麻萨诸塞州ASTeX of Woburn提供的ASTRON。由剥离气体源25提供氧气给远程等离子体源24。远程等离子体源24分解氧气产生氧原子团,这些氧原子团流进刻蚀腔体10,使腔体内的压力达到100-1,000毫托。氧原子团与抗蚀剂掩膜30反应用以去掉抗蚀剂掩膜30(步骤204)。在优选实施例中,中止来自刻蚀气体源20的刻蚀气体流和来自射频能量源16的能量,这样只需要氧原子团就可以实现对抗蚀剂掩膜30的剥离。在另一个实施例中,结合使用原位等离子体和远程等离子体以实现剥离。在另一个实施例中,氢气和氮气的混合气体可以单独用作剥离气体或者结合氧气用作剥离气体。
为中止剥离工序,需要停止来自远程等离子体的反应物流。从刻蚀腔体10取出晶片26(步骤206)。为清洗腔体壁12上的聚合物的残余物32,腔体壁加热器22给腔体壁12加热。在优选实施例中,腔体壁被加热到80℃至300℃的温度。在本发明的更优选实施例中,腔体壁被加热到120℃至200℃的温度。在本发明的最优选实施例中,腔体壁被加热到150℃的温度。由剥离气体源25提供氧气给远程等离子体源24。远程等离子体源24分解氧气产生氧原子团,这些氧原子团流进刻蚀腔体10,使腔体内的压力达到100-1,000毫托。氧原子团与经加热的腔体壁12反应,从腔体壁12上清洗掉聚合物的残余物32(步骤208)。在另一个实施例中,氢气和氮气的混合气体作为来自远程等离子体源的等离子体源可单独使用或者结合氧气使用。当腔体壁12得到充分的清洗时,来自远程等离子体源24的等离子体被停止,刻蚀腔体10为下一块晶片做好准备。
图3是本发明另一优选实施例的使用封闭等离子体的刻蚀腔体40的示意图。刻蚀腔体40包括一个腔体壁42,一个与射频(RF)能量源46连接的静电夹盘44,一个接地的阳极48,一个蚀刻剂气体源50,约束环52和一个与剥离气体源55连接的远程等离子体源54。在刻蚀腔体40的底部用作阴极的静电夹盘44和在刻蚀腔体40的顶部的阳极48被紧密的放置在一起以便将等离子体区限制在一个狭小的区域。约束环52把等离子体区的四周围住以进一步限制等离子体区,保持等离子体在刻蚀腔体40的中心附近,而离开腔体壁42。约束环52可以由石英制成并且以环型板形式形成,由约束环52之间的间隙把这些环型板分隔开。在这个例子中,示出了三个约束环52,但是在其他的实施例中可以使用一个或更多个约束环。约束环52之间的狭窄间隙防止等离子体到达腔体壁42,因为间隙非常的小,这使得间隙内的绝大多数等离子体由于与约束环52的碰撞而消灭,不能到达腔体壁42。
图4是在本发明优选实施例中所用的刻蚀腔体的工作流程图。晶片56安装在刻蚀腔体40内靠近底部的静电夹盘44上(步骤401)。晶片56有一介质层58,例如二氧化硅氧化物层或氮化物层,其中部分介质层58被抗蚀剂掩膜60覆盖而部分介质层58没有被抗蚀剂掩膜60覆盖。
接下来刻蚀腔体40刻蚀掉介质层58中的没有被抗蚀剂掩膜60覆盖的部分(步骤402)。这是通过往刻蚀腔体40内通入蚀刻剂气体,使刻蚀腔体内部的压力达到20-200毫托来实现的。在本发明的优选实施例中,蚀刻剂气体包括具有通用分子式CyFx的碳氟化合物气体和氧气。在先有技术中已经知道所使用蚀刻剂气体的剂量。由与刻蚀腔体40连接的蚀刻剂气体源50提供蚀刻剂气体。射频能量源46给静电夹盘44提供射频信号,在静电夹盘44和接地的阳极48之间产生射频波,激励蚀刻剂气体。被射频波激励的蚀刻剂气体分解成离子,在腔体内生成等离子体,围住晶片56。因为晶片位于等离子体内,介质层58没有被抗蚀剂掩膜60覆盖的部分就被刻蚀掉。因为静电夹盘44,能量源46,阳极48,和蚀刻剂气体源50在晶片周围形成等离子体且维持着等离子体,所以这些部分就提供了原位等离子体。刻蚀处理的结果是在约束环52上生成由抗蚀剂掩膜60和碳氟化合物蚀刻剂气体产生的聚合物的残余物62。当充分刻蚀介质层58时,通过停止产生原位等离子体来停止刻蚀工序(步骤402)。
示出的远程等离子体源54经过阳极48与刻蚀腔体壁42连接。远程等离子体源54和腔体40内部之间的入口必须足够大以使得在远程等离子体源54内生成的足够的氧原子团可以无损失的从远程等离子体源54通入到腔体40的内部。远程等离子体源54可以使用微波或者感应放电或者一些其他高浓度的分离的远程源。这种远程源的一个例子就是由麻萨诸塞州ASTeX of Woburn提供的ASTRON。由剥离气体源55提供氧气给远程等离子体源54。远程等离子体源54分解氧气产生氧原子团,这些氧原子团流进刻蚀腔体40,使腔体内的压力达到100-1,000毫托。氧原子团与抗蚀剂掩膜60反应,去掉抗蚀剂掩膜60(步骤404)。在优选实施例中,来自刻蚀气体源50的刻蚀气体流和来自射频能量源46的能量持续不断,这样使得通过来自远程等离子体源54的氧原子团和原位等离子体实现对抗蚀剂掩膜60的剥离。在另一个实施例中,氢气和氮气的混合气体作为来自远程等离子体源的等离子体源可以单独使用或者结合氧气使用。为中止剥离工序,需要停止来自远程等离子体源54的反应物流及原位等离子体。
从刻蚀腔体40取出晶片56(步骤406)。为清洗约束环52上的聚合物的残余物62,使氧或氮/氢蚀刻剂气体流进刻蚀腔体40,使腔体内的压力达到100-1,000毫托。在先有技术中已经知道所使用蚀刻剂气体的剂量。射频能量源46给静电夹盘44提供射频信号,在静电夹盘44和接地的阳极48之间产生射频波,激励蚀刻剂气体。被射频波激励的蚀刻剂气体分解成离子,在腔体内部产生等离子体并且围住晶片56。因为通过静电夹盘44,阳极48,和约束环52将原位等离子体限定在一个狭小区域,所以原位等离子体有足够的浓度和能量用以清洗约束环52上的聚合物的残余物62。当约束环52得到充分的清洗时,停止原位等离子体,刻蚀腔体40为下一块晶片做好准备。
在另一个实施例中,在没有封闭等离子体的刻蚀腔体内或者在有封闭等离子体的刻蚀腔体内用原位等离子体和远程等离子体进行清洗。
尽管本发明根据几个实施例已经作了描述,但是在本发明的范围内还存在变更的、替换的、等效的方案。也应该注意到,可以用许多替换方案来实现本发明的方法和设备。因此,这意味着下面附加的权利要求书的说明包括了符合本发明真实精神和范围内的所有变更、替换、等效方案。
Claims (10)
1.一种对布置在衬底上的介质层进行至少部分刻蚀的方法,其中所述介质层一部分在刻蚀掩膜下面而所述介质层另一部分不在刻蚀掩膜下面,所述方法包括以下步骤:
将衬底放入刻蚀腔体内;
给刻蚀腔体内通入蚀刻剂气体;
由刻蚀腔体内的蚀刻剂气体产生原位等离子体;
刻蚀掉介质层中的不在刻蚀掩膜下面的部分;
在远程等离子体源处产生远程等离子体;
给刻蚀腔体内通入远程等离子体;
当衬底位于刻蚀腔体内时,剥离去掉刻蚀掩膜;和
从刻蚀腔体内取出衬底。
2.根据权利要求1的方法,进一步包括在从刻蚀腔体内取出衬底的步骤后,提供等离子体清洗刻蚀腔体的步骤。
3.根据权利要求1或2所述的方法,其中蚀刻剂气体还包括氧气。
4.根据权利要求1或2的方法,还包括在给刻蚀腔体内通入远程等离子体之前,停止给刻蚀腔体内通蚀刻剂气体的步骤。
5.根据权利要求1的方法,其中在远程等离子体源处产生的远程等离子体是由氧气、氮气和氢气构成的组中的气体。
6.根据权利要求2的方法,其中提供等离子体清洗刻蚀腔体的步骤包括,将腔体壁加热到温度80℃-300℃。
7.根据权利要求2的方法,其中提供等离子体清洗刻蚀腔体的步骤包括,将腔体壁加热到120℃-200℃的温度。
8.根据权利要求2的方法,其中提供等离子体清洗刻蚀腔体的步骤包括,将腔体壁加热到150℃的温度。
9.根据权利要求2的方法,其中提供等离子体清洗刻蚀腔体的步骤还包括:
在远程等离子体源处产生远程等离子体;
给刻蚀腔体内通入远程等离子体;和
使用远程等离子体,以去掉受到加热的腔体壁上的残余物。
10.根据权利要求2的方法,还包括将等离子体限制在约束环内的步骤,其中提供等离子体清洗刻蚀腔体的步骤包括:
给刻蚀腔体内通入蚀刻剂气体;
由刻蚀腔体内的蚀刻剂气体产生原位等离子体;和
用由蚀刻剂气体产生的原位等离子体去掉约束环上的残余物。
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Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
US7588036B2 (en) * | 2002-07-01 | 2009-09-15 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
US20070051471A1 (en) * | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
US7097716B2 (en) * | 2002-10-17 | 2006-08-29 | Applied Materials, Inc. | Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect |
KR100542740B1 (ko) * | 2002-11-11 | 2006-01-11 | 삼성전자주식회사 | 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법 |
US6923189B2 (en) * | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
US7140374B2 (en) * | 2003-03-14 | 2006-11-28 | Lam Research Corporation | System, method and apparatus for self-cleaning dry etch |
US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US7053994B2 (en) * | 2003-10-28 | 2006-05-30 | Lam Research Corporation | Method and apparatus for etch endpoint detection |
US7211518B2 (en) * | 2004-04-19 | 2007-05-01 | Lam Research Corporation | Waferless automatic cleaning after barrier removal |
US20050279453A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | System and methods for surface cleaning |
US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
US20060051965A1 (en) * | 2004-09-07 | 2006-03-09 | Lam Research Corporation | Methods of etching photoresist on substrates |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US20060228889A1 (en) * | 2005-03-31 | 2006-10-12 | Edelberg Erik A | Methods of removing resist from substrates in resist stripping chambers |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
US7479457B2 (en) * | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
US8317929B2 (en) * | 2005-09-16 | 2012-11-27 | Asml Netherlands B.V. | Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus |
US7695567B2 (en) * | 2006-02-10 | 2010-04-13 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
US20070254112A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning |
US7605063B2 (en) * | 2006-05-10 | 2009-10-20 | Lam Research Corporation | Photoresist stripping chamber and methods of etching photoresist on substrates |
US20070266946A1 (en) * | 2006-05-22 | 2007-11-22 | Byung-Chul Choi | Semiconductor device manufacturing apparatus and method of using the same |
US7740736B2 (en) * | 2006-06-08 | 2010-06-22 | Lam Research Corporation | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber |
US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US7789965B2 (en) * | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US8043430B2 (en) * | 2006-12-20 | 2011-10-25 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
US8283255B2 (en) * | 2007-05-24 | 2012-10-09 | Lam Research Corporation | In-situ photoresist strip during plasma etching of active hard mask |
KR101423554B1 (ko) | 2007-07-31 | 2014-07-25 | (주)소슬 | 플라즈마 식각 장치 및 이를 이용한 웨이퍼 식각 방법 |
KR101372356B1 (ko) * | 2007-07-11 | 2014-03-12 | (주)소슬 | 플라즈마 처리 방법 |
US8622021B2 (en) | 2007-10-31 | 2014-01-07 | Lam Research Corporation | High lifetime consumable silicon nitride-silicon dioxide plasma processing components |
WO2010003266A1 (en) * | 2008-07-09 | 2010-01-14 | Oerlikon Solar Ip Ag, Trübbach | Remote plasma cleaning method and apparatus for applying said method |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
SG178288A1 (en) * | 2009-08-31 | 2012-03-29 | Lam Res Corp | A multi-peripheral ring arrangement for performing plasma confinement |
JP2010080986A (ja) * | 2010-01-14 | 2010-04-08 | Canon Anelva Corp | 絶縁膜エッチング装置 |
CN104550132B (zh) * | 2013-10-29 | 2016-12-07 | 中芯国际集成电路制造(上海)有限公司 | 超深孔等离子刻蚀工艺后关键尺寸一致性的控制方法 |
US9870932B1 (en) * | 2016-07-27 | 2018-01-16 | Lam Research Corporation | Pressure purge etch method for etching complex 3-D structures |
CN111586957B (zh) * | 2019-02-19 | 2021-05-04 | 大连理工大学 | 一种容性耦合等离子体放电装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240728A (ja) * | 1985-08-15 | 1987-02-21 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
JP2555062B2 (ja) * | 1987-04-10 | 1996-11-20 | 株式会社日立製作所 | プラズマ処理装置 |
US4857140A (en) * | 1987-07-16 | 1989-08-15 | Texas Instruments Incorporated | Method for etching silicon nitride |
US4836905A (en) * | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Processing apparatus |
JP2646811B2 (ja) * | 1990-07-13 | 1997-08-27 | ソニー株式会社 | ドライエッチング方法 |
JPH05243167A (ja) * | 1992-02-28 | 1993-09-21 | Sony Corp | 半導体装置の製造方法 |
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5589041A (en) * | 1995-06-07 | 1996-12-31 | Sony Corporation | Plasma sputter etching system with reduced particle contamination |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JPH0936103A (ja) * | 1995-07-18 | 1997-02-07 | Ulvac Japan Ltd | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 |
US5788799A (en) * | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
EP1055249A1 (en) * | 1998-02-09 | 2000-11-29 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
JP3218348B2 (ja) * | 1998-05-21 | 2001-10-15 | 株式会社アルバック | プラズマアッシング方法 |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
JP2000030896A (ja) * | 1998-07-10 | 2000-01-28 | Anelva Corp | プラズマ閉込め装置 |
US6168726B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Etching an oxidized organo-silane film |
-
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