ATE362647T1 - Verfahren zur veraschung eines photolackes mit einem mikrowellen-plasma in einem ätzkamer für dielektrische schichten und plasma-machine dafür - Google Patents

Verfahren zur veraschung eines photolackes mit einem mikrowellen-plasma in einem ätzkamer für dielektrische schichten und plasma-machine dafür

Info

Publication number
ATE362647T1
ATE362647T1 AT01926387T AT01926387T ATE362647T1 AT E362647 T1 ATE362647 T1 AT E362647T1 AT 01926387 T AT01926387 T AT 01926387T AT 01926387 T AT01926387 T AT 01926387T AT E362647 T1 ATE362647 T1 AT E362647T1
Authority
AT
Austria
Prior art keywords
etch
plasma
photoresistant
ashing
etching
Prior art date
Application number
AT01926387T
Other languages
English (en)
Inventor
Jeffrey Marks
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE362647T1 publication Critical patent/ATE362647T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT01926387T 2000-03-30 2001-03-16 Verfahren zur veraschung eines photolackes mit einem mikrowellen-plasma in einem ätzkamer für dielektrische schichten und plasma-machine dafür ATE362647T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/539,294 US6362110B1 (en) 2000-03-30 2000-03-30 Enhanced resist strip in a dielectric etcher using downstream plasma

Publications (1)

Publication Number Publication Date
ATE362647T1 true ATE362647T1 (de) 2007-06-15

Family

ID=24150619

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01926387T ATE362647T1 (de) 2000-03-30 2001-03-16 Verfahren zur veraschung eines photolackes mit einem mikrowellen-plasma in einem ätzkamer für dielektrische schichten und plasma-machine dafür

Country Status (11)

Country Link
US (2) US6362110B1 (de)
EP (1) EP1269514B1 (de)
JP (1) JP4860087B2 (de)
KR (1) KR100787019B1 (de)
CN (1) CN1282986C (de)
AT (1) ATE362647T1 (de)
AU (1) AU2001252928A1 (de)
DE (1) DE60128460T2 (de)
RU (1) RU2279732C2 (de)
TW (1) TW516069B (de)
WO (1) WO2001075932A2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902629B2 (en) * 2002-04-12 2005-06-07 Applied Materials, Inc. Method for cleaning a process chamber
US7588036B2 (en) * 2002-07-01 2009-09-15 Applied Materials, Inc. Chamber clean method using remote and in situ plasma cleaning systems
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US7097716B2 (en) * 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US6923189B2 (en) * 2003-01-16 2005-08-02 Applied Materials, Inc. Cleaning of CVD chambers using remote source with cxfyoz based chemistry
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
US7211518B2 (en) * 2004-04-19 2007-05-01 Lam Research Corporation Waferless automatic cleaning after barrier removal
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US20060228889A1 (en) * 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US8317929B2 (en) * 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
US7695567B2 (en) * 2006-02-10 2010-04-13 Applied Materials, Inc. Water vapor passivation of a wall facing a plasma
US20070254112A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
US20070266946A1 (en) * 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
KR101423554B1 (ko) 2007-07-31 2014-07-25 (주)소슬 플라즈마 식각 장치 및 이를 이용한 웨이퍼 식각 방법
KR101372356B1 (ko) * 2007-07-11 2014-03-12 (주)소슬 플라즈마 처리 방법
CN101889329B (zh) * 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
CN102089848B (zh) * 2008-07-09 2013-05-22 欧瑞康太阳能股份公司(特吕巴赫) 远程等离子体清洗方法和用于应用所述方法的设备
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5794988B2 (ja) * 2009-08-31 2015-10-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 局所的なプラズマ閉じ込め及び圧力制御の構成、並びにその方法
JP2010080986A (ja) * 2010-01-14 2010-04-08 Canon Anelva Corp 絶縁膜エッチング装置
CN104550132B (zh) * 2013-10-29 2016-12-07 中芯国际集成电路制造(上海)有限公司 超深孔等离子刻蚀工艺后关键尺寸一致性的控制方法
US9870932B1 (en) * 2016-07-27 2018-01-16 Lam Research Corporation Pressure purge etch method for etching complex 3-D structures
CN111586957B (zh) * 2019-02-19 2021-05-04 大连理工大学 一种容性耦合等离子体放电装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240728A (ja) * 1985-08-15 1987-02-21 Tokuda Seisakusho Ltd ドライエツチング装置
JP2555062B2 (ja) * 1987-04-10 1996-11-20 株式会社日立製作所 プラズマ処理装置
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4836905A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Processing apparatus
JP2646811B2 (ja) * 1990-07-13 1997-08-27 ソニー株式会社 ドライエッチング方法
JPH05243167A (ja) * 1992-02-28 1993-09-21 Sony Corp 半導体装置の製造方法
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH0936103A (ja) * 1995-07-18 1997-02-07 Ulvac Japan Ltd 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US5849639A (en) * 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
JP2002503031A (ja) * 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 種密度を個別制御するプラズマアシスト処理チャンバ
JP3218348B2 (ja) * 1998-05-21 2001-10-15 株式会社アルバック プラズマアッシング方法
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
JP2000030896A (ja) * 1998-07-10 2000-01-28 Anelva Corp プラズマ閉込め装置
US6168726B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Etching an oxidized organo-silane film

Also Published As

Publication number Publication date
KR20020093869A (ko) 2002-12-16
DE60128460D1 (de) 2007-06-28
WO2001075932A2 (en) 2001-10-11
EP1269514B1 (de) 2007-05-16
DE60128460T2 (de) 2008-01-17
US20020052114A1 (en) 2002-05-02
AU2001252928A1 (en) 2001-10-15
CN1282986C (zh) 2006-11-01
RU2002126255A (ru) 2004-03-27
JP2003529928A (ja) 2003-10-07
KR100787019B1 (ko) 2007-12-18
US6362110B1 (en) 2002-03-26
EP1269514A2 (de) 2003-01-02
RU2279732C2 (ru) 2006-07-10
JP4860087B2 (ja) 2012-01-25
TW516069B (en) 2003-01-01
CN1432190A (zh) 2003-07-23
WO2001075932A3 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
ATE362647T1 (de) Verfahren zur veraschung eines photolackes mit einem mikrowellen-plasma in einem ätzkamer für dielektrische schichten und plasma-machine dafür
JP5414179B2 (ja) フォトレジスト及びエッチング残余物の低圧除去
TW200625440A (en) Wafer bevel polymer removal
KR20180093096A (ko) 주입형 포토레지스트 스트리핑 공정
JP2013511128A5 (de)
KR20170089782A (ko) 하이브리드 스테어-스텝 에칭
JP2012023385A (ja) 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程
TW201442108A (zh) 在原處之金屬殘餘物清潔
KR102070459B1 (ko) 평활 측벽의 급속 교번 에칭 프로세스를 위한 제어된 가스 혼합
WO2008046304A8 (fr) Procédé de nettoyage post-gravure/calcination d'une tranche de semi-conducteur
TW432525B (en) Insitu dry cleaning method for poly gate etch
CN106920727A (zh) 等离子体处理装置及其清洗方法
US5840203A (en) In-situ bake step in plasma ash process to prevent corrosion
TW200520073A (en) Process of dual damascene or damascene
TW201828360A (zh) 高深寬比蝕刻
JPS57114235A (en) Cleaning of semiconductor substrate
TW200737339A (en) Method for removing polymer from a wafer and removing polymer in an interconnect process
KR20140015203A (ko) 트랜치/비아 ｃｄ 축소 및 튜닝 방법
KR100741916B1 (ko) 플라즈마 처리장치 및 그 세정방법
TW201903897A (zh) 用於半導體處理之矽基沉積
KR20200118354A (ko) 반도체 프로세싱을 위한 실리콘-기반 증착
JP2000509211A (ja) 半導体ウェハー表面からフォトレジストをクリーニングし、ストリッピングする方法
KR970018160A (ko) 반도체 웨이퍼의 폴리머 제거방법
KR20060042548A (ko) 스트립 챔버의 플라즈마 검출센서 고정장치
KR980009687U (ko) 반도체 웨이퍼 에싱장치의 가스분사관

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties