CN1272989C - 产生x-光的方法和装置 - Google Patents

产生x-光的方法和装置 Download PDF

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Publication number
CN1272989C
CN1272989C CNB018163963A CN01816396A CN1272989C CN 1272989 C CN1272989 C CN 1272989C CN B018163963 A CNB018163963 A CN B018163963A CN 01816396 A CN01816396 A CN 01816396A CN 1272989 C CN1272989 C CN 1272989C
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CN
China
Prior art keywords
ejectisome
target
electron beam
interaction area
hits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB018163963A
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English (en)
Chinese (zh)
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CN1466860A (zh
Inventor
汉斯·赫茨
奥斯卡·亨伯格
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Ixram Stock Company
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Jettec AB
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Publication date
Priority claimed from SE0002785A external-priority patent/SE0002785D0/xx
Priority claimed from SE0003073A external-priority patent/SE522150C2/sv
Application filed by Jettec AB filed Critical Jettec AB
Publication of CN1466860A publication Critical patent/CN1466860A/zh
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Publication of CN1272989C publication Critical patent/CN1272989C/zh
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/112Non-rotating anodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/08Targets (anodes) and X-ray converters
    • H01J2235/081Target material
    • H01J2235/082Fluids, e.g. liquids, gases
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
CNB018163963A 2000-07-28 2001-07-18 产生x-光的方法和装置 Expired - Lifetime CN1272989C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE0002785A SE0002785D0 (sv) 2000-07-28 2000-07-28 Method and apparatus for generating x-ray or EUV radiation as well as use thereof
SE00027854 2000-07-28
SE00030734 2000-08-31
SE0003073A SE522150C2 (sv) 2000-08-31 2000-08-31 Förfarande och apparat för alstring av röntgenstrålning samt användning därav

Publications (2)

Publication Number Publication Date
CN1466860A CN1466860A (zh) 2004-01-07
CN1272989C true CN1272989C (zh) 2006-08-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018163963A Expired - Lifetime CN1272989C (zh) 2000-07-28 2001-07-18 产生x-光的方法和装置

Country Status (7)

Country Link
EP (1) EP1305984B1 (ja)
JP (1) JP5073146B2 (ja)
CN (1) CN1272989C (ja)
AT (1) ATE489838T1 (ja)
AU (1) AU2001272873A1 (ja)
DE (1) DE60143527D1 (ja)
WO (1) WO2002011499A1 (ja)

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CN105719926A (zh) * 2014-12-22 2016-06-29 西门子公司 金属射线x射线管

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US6933515B2 (en) * 2003-06-26 2005-08-23 University Of Central Florida Research Foundation Laser-produced plasma EUV light source with isolated plasma
DE102004003854A1 (de) * 2004-01-26 2005-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren und Vorrichtungen zur Erzeugung fester Filamente in einer Vakuumkammer
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Euv光源、euv露光装置、及び半導体デバイスの製造方法
US7557366B2 (en) * 2006-05-04 2009-07-07 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
SE530094C2 (sv) * 2006-05-11 2008-02-26 Jettec Ab Metod för alstring av röntgenstrålning genom elektronbestrålning av en flytande substans
KR101437583B1 (ko) * 2007-07-03 2014-09-12 삼성전자주식회사 리소그라피 장치 및 리소그라피 방법
DE102008026938A1 (de) 2008-06-05 2009-12-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsquelle und Verfahren zum Erzeugen von Röntgenstrahlung
CN104681378B (zh) * 2009-04-03 2017-04-12 伊克斯拉姆公司 在x射线产生中液体金属靶的供应
EP2415065A1 (en) 2009-04-03 2012-02-08 Excillum AB Supply of a liquid-metal target in x-ray generation
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Lpp方式のeuv光源とその発生方法
US8976932B2 (en) * 2010-07-09 2015-03-10 Bsr Co., Ltd. X-ray generating device
JP5347138B2 (ja) * 2010-12-27 2013-11-20 双葉電子工業株式会社 光殺菌装置および紫外線エックス線発生装置
JP5167475B2 (ja) * 2010-12-27 2013-03-21 双葉電子工業株式会社 光殺菌装置および紫外線エックス線発生装置
US20140161233A1 (en) 2012-12-06 2014-06-12 Bruker Axs Gmbh X-ray apparatus with deflectable electron beam
CN103079327B (zh) * 2013-01-05 2015-09-09 中国科学院微电子研究所 一种靶源预整形增强的极紫外光发生装置
CN105190823B (zh) * 2013-02-13 2017-11-17 皇家飞利浦有限公司 多x射线束管
CN103209536A (zh) * 2013-03-22 2013-07-17 中国科学院上海光学精密机械研究所 产生软x射线的方法
DE102013209447A1 (de) * 2013-05-22 2014-11-27 Siemens Aktiengesellschaft Röntgenquelle und Verfahren zur Erzeugung von Röntgenstrahlung
DE102013220189A1 (de) 2013-10-07 2015-04-23 Siemens Aktiengesellschaft Röntgenquelle und Verfahren zur Erzeugung von Röntgenstrahlung
CN106061388B (zh) * 2014-01-07 2019-03-08 杰特克公司 X-射线微成像
CN103871832B (zh) * 2014-03-21 2016-08-24 中国科学院空间科学与应用研究中心 一种极紫外脉冲发生调制器
EP3170194B1 (en) 2014-07-17 2019-05-22 Siemens Healthcare GmbH Fluid injector for x-ray tubes and method to provide a liquid anode by liquid metal injection
US9301381B1 (en) * 2014-09-12 2016-03-29 International Business Machines Corporation Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas
DE102014226813A1 (de) 2014-12-22 2016-06-23 Siemens Aktiengesellschaft Metallstrahlröntgenröhre
EP3214635A1 (en) * 2016-03-01 2017-09-06 Excillum AB Liquid target x-ray source with jet mixing tool
RU2709183C1 (ru) * 2019-04-26 2019-12-17 Общество С Ограниченной Ответственностью "Эуф Лабс" Источник рентгеновского излучения с жидкометаллической мишенью и способ генерации излучения
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
EP3493239A1 (en) * 2017-12-01 2019-06-05 Excillum AB X-ray source and method for generating x-ray radiation
KR102447685B1 (ko) * 2020-07-22 2022-09-27 포항공과대학교 산학협력단 특정 파장대의 광원을 발생시키기 위한 장치 및 방법
US11882642B2 (en) 2021-12-29 2024-01-23 Innovicum Technology Ab Particle based X-ray source
WO2023128856A1 (en) 2021-12-29 2023-07-06 Innovicum Technology Ab Particle based x-ray source

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US4953191A (en) * 1989-07-24 1990-08-28 The United States Of America As Represented By The United States Department Of Energy High intensity x-ray source using liquid gallium target
US5052034A (en) * 1989-10-30 1991-09-24 Siemens Aktiengesellschaft X-ray generator
JPH03283398A (ja) * 1990-03-30 1991-12-13 Shimadzu Corp X線発生装置
JPH05258692A (ja) * 1992-03-10 1993-10-08 Nikon Corp X線発生方法およびx線発生装置
JP2552433B2 (ja) * 1994-06-30 1996-11-13 関西電力株式会社 レーザープラズマx線源のデブリス除去方法及び装置
JPH08162286A (ja) * 1994-12-07 1996-06-21 Olympus Optical Co Ltd レーザプラズマ光源
SE510133C2 (sv) * 1996-04-25 1999-04-19 Jettec Ab Laser-plasma röntgenkälla utnyttjande vätskor som strålmål
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5763930A (en) * 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
JP3817848B2 (ja) * 1997-07-18 2006-09-06 株式会社ニコン 照明装置
AU3466899A (en) * 1998-04-03 1999-10-25 Advanced Energy Systems, Inc. Diffuser system and energy emission system for photolithography
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JP3602356B2 (ja) * 1998-12-02 2004-12-15 三菱電機株式会社 電磁波発生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105719926A (zh) * 2014-12-22 2016-06-29 西门子公司 金属射线x射线管
US9911568B2 (en) 2014-12-22 2018-03-06 Siems Aktiengesellschaft Metal-jet X-ray tube
CN105719926B (zh) * 2014-12-22 2018-06-22 西门子公司 金属射线x射线管

Also Published As

Publication number Publication date
EP1305984A1 (en) 2003-05-02
CN1466860A (zh) 2004-01-07
DE60143527D1 (de) 2011-01-05
WO2002011499A1 (en) 2002-02-07
JP5073146B2 (ja) 2012-11-14
JP2004505421A (ja) 2004-02-19
EP1305984B1 (en) 2010-11-24
AU2001272873A1 (en) 2002-02-13
ATE489838T1 (de) 2010-12-15

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Effective date of registration: 20190926

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Patentee after: Ixram Stock Company

Address before: Stoxund, Sweden

Patentee before: Jettec AB

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