CN1267395A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1267395A
CN1267395A CN98808360A CN98808360A CN1267395A CN 1267395 A CN1267395 A CN 1267395A CN 98808360 A CN98808360 A CN 98808360A CN 98808360 A CN98808360 A CN 98808360A CN 1267395 A CN1267395 A CN 1267395A
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mentioned
semiconductor device
electrode pad
semiconductor chip
connection electrode
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CN98808360A
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English (en)
Inventor
菊地正义
田口升
上田光一
渡边真
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Citizen Watch Co Ltd
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Citizen Watch Co Ltd
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Publication of CN1267395A publication Critical patent/CN1267395A/zh
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Abstract

在半导体芯片(1a)上边,在其多个输入输出端子用电极焊盘(2)上,形成具有开口部分(3a)的绝缘膜(3),在该绝缘膜(3)上边,分别设置多个连接电极(4),使得通过开口部分(3a)与各个电极焊盘(2)接触。在该各个连接电极(4)上边设置热可塑性的树脂(5),使该树脂(5)附着或含有多个(理想的是10个以上)的导电性粒子(9),构成半导体装置(1)。在把该半导体装置装配到已形成了布线图形的基板是之际,当把该半导体装置定位为使连接电极(4)与规定的布线相对,压接到已涂敷上绝缘性树脂的基板上进行加热时,连接电极(4)和布线,借助于夹持在其间的多个导电性粒子(9)而导通。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法。特别是涉及在作为电视或计算机等的信息设备的显示装置使用的液晶显示面板的玻璃基板上边，用玻璃上的芯片(COG)方式装配的半导体装置，或在内置于电子设备内进行控制的印制布线基板上边，用板上芯片(COB)方式装配的半导体装置和该半导体装置的制造方法。
技术背景
首先，用图18～图19，以中介各向异性导电薄膜用COG方式装配在液晶显示面板上的半导体装置为例，对现有的半导体装置进行说明。
图18和图19都是现有的半导体装置，图18的剖面图示出了具有直壁式的凸点的半导体装置，图19的剖面图示出了具有蘑菇式的凸点的半导体装置。
图20的示意性剖面图示出了中介各向异性导电薄膜把图18所示的半导体装置装配到液晶显示面板的玻璃基板上的状态。
图18所示的半导体装置10，在半导体芯片10a(虽然示出了简单的剖面，但实际上形成有多个MOS晶体管等的元器件)的一面上，设有由铝构成的多个(在图中，仅仅放大示出了2个)的输入输出端子用电极焊盘2。在该半导体芯片10a上，设置了在各个电极焊盘上边具有开口部分3a的绝缘膜3，在与该绝缘膜3上边的各个电极焊盘2对应的位置上，通过各自的开口部分3a，中介与电极焊盘2接触的电极膜12，设置直壁式的凸点15。
电极膜12使用用来防止电极焊盘2和作为凸点15的材质的金之间的相互扩散的金属、和具有保持凸点15的贴紧性的功能的金属这样的至少2层的电极膜。
该半导体装置10，例如如图20所示装配到形成了由ITO(In和Sn的氧化物)图形形成的布线17的液晶显示面板的玻璃基板16上边，而把使导电性粒子19分散后的各向异性导电薄膜18夹在中间。
这时，采用把导电性粒子19夹在半导体装置10的凸点15和玻璃基板16的布线17之间，并进行加热和加压的办法，使凸点15与布线17电连接。另外，在相邻的凸点彼此间，由于未把导电性粒子夹在中间，故保持绝缘性。
导电性粒子19，使用在有机高分子树脂的表面上形成有镍(Ni)和金(Au)的叠层膜，且直径为5微米～10微米之间的导电性粒子。
在图20中，为了便于进行图示，示出的是在各个凸点15和布线17之间分别夹持有2个或3个导电性粒子19的情况，但是，为了得到1Ω以下的电导，至少需要夹持10个左右的导电性粒子19。
为此，由实验结果得知，在导电性粒子19的直径为5微米的情况下，凸点15的上表面的面积必须在3000微米2以上。
这样一来，凸点15由于其上表面的面积必须在3000微米2以上，故若打算把凸点15的排列节距定为80微米，把凸点间的间隙定为20微米来进行设计，则必须把其尺寸定为60微米×50微米。
此外，凸点15的高度(从绝缘膜3的表面到凸点15的上表面为止的高度)，考虑到把导电性粒子19效率良好地捕捉到凸点15上边的情况，和用各向异性导电薄膜18的树脂填充半导体装置10和玻璃基板16之间的间隙的情况，在10微米～20微米之间进行设计。
此外，在凸点为直壁式，导电粒子的直径为5微米的情况下，其排列节距(连接节距)到50微米为止可以进行对应。
另一方面，如图19所示，也有设置蘑菇式的凸点25的半导体装置20。
该蘑菇式的凸点25，是金(Au)或铜(Cu)与金的叠层膜，用电镀法设置，但是与直壁式的凸点一样，中介电极膜12与半导体芯片20a的各个电极焊盘2导通。
在与图20所示的情况同样地使用各向异性导电薄膜，把具有该蘑菇式的凸点25的半导体装置20装配到基板上的情况下，如设导电性粒子19的直径为5微米，由于凸点25的直径大，故连接节距只能至80微米为止进行对应。
这样一来，在现有的半导体装置中有具备直壁式和蘑菇式这么2种类型的凸点的半导体装置，但是不论哪一种的凸点都可以用电镀法设置，故在其高度上易于产生不均一性。例如，在凸点的高度为15微米的情况下，会发生4微米(±2微米)左右的不均一性。为此，凸点与布线之间的电连接的状态也易于产生不均一性，使装配状态下的半导体装置的连接变得不稳定，在把液晶驱动用IC等的半导体装置装配到液晶显示面板上的情况下，存在着会招致显示不良的问题。
然而，液晶显示装置年年要求高精细显示，其中也有象素节距尺寸为20微米～40微米的液晶显示装置。
但是，如果导电性粒子的大小比直径5微米还小，则虽然仍可以设计与20微米～40微米的象素节距对应的半导体装置的凸点，但如果其直径定为5微米，即便是用直壁式凸点15，由于连接节距50微米也是最小的，故使之与20微米～40微米这样的所要求的象素节距对应地装配半导体装置10，是不可能的。
为此，不得不展宽象素节距，在装配区域内进行设计。当象素节距展宽后，就必须与之对应起来增大液晶显示装置的边框面积，结果就存在着要求小型化的液晶显示装置的商品价值下跌的问题。
此外，为了与20微米这么细的象素节距相对应地得到20微米的连接节距，在形成凸点的情况下，对于厚度10～20微米的抗蚀剂来说，就必须把其开口宽度形成为10微米以下。为此，还存在着抗蚀剂的纵横比(厚度与开口宽度之比)变得很苛刻，其稳定的形成变得困难起来的问题。
特别是在图19所示的半导体装置那样的蘑菇式的凸点的情况下，其排列节距最小是80微米，与直壁式的凸点的情况比较，相对于象素节距必须进一步展宽连接节距进行设计。要展宽连接节距，就必须展宽液晶显示装置的显示区域外侧的边框面积，结果商品价值比装配设置直壁式的凸点的情况下还要进一步下跌。
另外，在蘑菇式的凸点的情况下，由于持有伞这种构造上的特征，故要形成与连接节距20微米对应的高度10微米～20微米的凸点，事实上是不可能的。
本发明就是为解决现有的半导体装置中的这样的问题而发明出来的，目的是提供在装配状态下的电连接确实且稳定，而且还可以使连接节距充分地小的半导体装置，和该半导体装置的制造方法。
发明的公开
为了实现上述目的，本发明的半导体装置是这样一种半导体装置：在半导体芯片上边，设置在该半导体芯片所具有的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜，在该绝缘膜上边，设有多个连接电极，使之分别通过上述各个开口部分与各个电极焊盘接触，在该各个连接电极上边，分别设置热可塑性树脂，该各个热可塑性树脂具有多个导电性粒子。
上述连接电极，可以用铬和铜这样的2层膜，或铬和铜和金这样的3层膜构成。
本发明的半导体装置的制造方法，具有下述(1)～(5)的各个工序。
(1)在半导体芯片上边，形成在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜的工序；
(2)在该绝缘膜上边，形成通过上述各个开口部分与各个电极焊盘接触的金属膜的工序；
(3)在该金属膜上边的大致整个面上形成热可塑性的感光性树脂膜，并用光刻方法，在与上述各个电极焊盘对应的位置上形成掩模的工序；
(4)用刻蚀法除去未被由上述金属膜的上述感光性树脂构成的掩模覆盖起来的部分，在被上述掩模覆盖起来的部分上，分别形成与上述电极焊盘接触的连接电极的工序；
(5)把导电性粒子附着到上述感光性树脂上的工序。
在上述(3)的工序中，也可以在上述金属膜的大致整个面上形成具有导电性粒子的热可塑性的感光性树脂膜。
借助于此，在上述(4)的工序中，当用刻蚀法除去未被由上述金属膜的上述感光性树脂构成的掩模覆盖起来的部分，在被上述掩模覆盖起来的部分上，分别形成与上述电极焊盘接触的连接电极后，在其各个连接电极上边，将剩下具有导电性粒子的热可塑性的感光性树脂膜。
因此，就不再需要上述(5)的把导电性粒子附着到上述感光性树脂上的工序。
在这些半导体装置的制造方法中，在形成上述金属膜的工序中，可以在上述半导体芯片的形成了上述绝缘膜的整个面上，用溅射法，形成由铬和铜这2层膜或由铬和铜和金这3层膜构成的金属膜。
此外，在上述(1)的工序中，也可以在半导体芯片上边形成了上述绝缘膜之后，用无电解电镀法，在该绝缘膜上边，分别形成通过上述各个开口部分与各个电极焊盘接触，且比开口部分还大的多个连接电极，在该连接电极上边，分别设置热可塑性树脂，并把导电性粒子附着到该各个热可塑性树脂上。
或者，采用在用该无电解电镀法形成的各个连接电极上边，分别设置具有导电性粒子的热可塑性树脂的办法，不再需要把导电性粒子附着到上述热可塑性树脂上的工序。
附图的简单说明
图1的示意性剖面图示出了本发明的半导体装置的一个实施例。
图2到图7的示意性剖面图分别依次示出了用来说明本发明的半导体装置的制造方法的实施例1的各个工序。
图8的工序图示出了把导电性粒子附着到设置在把多个连接电极排列起来的半导体装置的各个连接电极上边的热可塑性树脂上的工序。
图9的示意性剖面图示出了把图1所示的半导体装置装配到液晶显示面板的玻璃基板上边时的初始工序。
图10的示意性剖面图示出了上述情况下其加压和加热工序。
图11的示意性剖面图示出了上述情况下其装配完毕后的状态。
图12到图14的示意性剖面图，为了说明本发明的半导体装置的制造方法的实施例2，依次示出了与实施例1不同的工序。
图15到图17的示意性剖面图示出了用于说明本发明的半导体装置的实施例3、4的中间工序。
图18和图19的示意性剖面图示出了现有的半导体装置的不同的例子。
图20的示意性剖面图示出了把图18示出的现有的半导体装置装配到液晶显示面板的玻璃基板上边时的装配构造。
优选实施例
以下，用附图说明本发明的半导体装置及其制造方法的优选实施例。
[半导体装置的构造：图1]
首先，用图1说明本发明的半导体装置的一个实施例。在图1中，对于与图18相同的部分赋予同一标号。
示于图1的半导体装置1，在半导体芯片1a(虽然示出的是简单的剖面，但实际上形成有多个MOS晶体管等的元器件)的一面上，设有多个(在图中仅仅放大示出了2个)输入输出端子用电极焊盘2。
形成绝缘膜3，使得把该半导体芯片1a上边覆盖起来，在该绝缘膜3的各个电极焊盘2上边，分别开设开口部分3a。
在与该绝缘膜3上边的各个电极焊盘2对应的位置上，分别设置多个连接电极4使得通过各个开口部分3a与各个电极焊盘进行接触，在该各个连接电极4上边，分别具备热可塑性树脂5。在该树脂5上，每个都附着多个(理想的是10个以上)导电性粒子(小球)。
绝缘膜3用厚度0.2～3微米的氮化硅(SiN)膜形成。除了氮化硅(SiN)膜之外，作为无机质膜，也可以使用含有磷硅酸盐玻璃(PSG)之类的杂质的氧化硅膜，或作为有机质膜的聚酰亚胺膜。此外，还可以作成为把氮化硅(SiN)膜所代表的无机质膜和有机质膜组合起来的2层构造。
连接电极4，可以用金(Au)、银(Ag)或铜(Cu)等的单层金属膜，或使铬(Cr)和铜(Cu)叠层为2层的金属膜，或由铬(Cr)和铜(Cu)和金(Au)构成的3层膜构成。此外，也可以是钛(Ti)—钨(W)合金与金(Au)的2层膜。
连接电极4的厚度，形成为在0.5微米～5微米之间。在形成得比5微米还厚的情况下，除用后边要讲的溅射法形成时所需要的形成时间变长外，为了使连接电极4图形化，对金属膜进行刻蚀的时间也将变长，故是不能令人满意的。而且，其端部侧壁易成为锥状，难以得到良好的刻蚀特性，从这点看也是不理想的。
设于连接电极4的上边的热可塑性树脂5，出于其形成方法，使用感光性树脂，橡胶系抗蚀剂或二叠氮(diazido)类抗蚀剂，例如，使用JSR生产的THB或东京应化生产的OMR83(负抗蚀剂)、OFPR800(正抗蚀剂)等。
但是，在其形成时不用光刻方法的情况下，没必要是感光性树脂，只要是热可塑性树脂即可。
该树脂5的厚度，由于要使之具有保持用后述的要领附着的导电性粒子9的功能，故希望作成为对于导电性粒子9的直径来说，其1/3倍～3倍间的大小。
特别是在树脂5的厚度为导电性粒子9的直径的3倍以上的情况下，在用后述的要领附着导电性粒子9的过程中，会因树脂5的形状坍塌而向两侧扩展，因此相邻的连接电极4间的缝隙有被树脂5填满的可能。这样的话，如后述那样，在中介绝缘性树脂(粘接剂)把该半导体装置装配到基板上时，就不能向连接电极4彼此间的间隙内填充该绝缘性树脂，在装配构造的可靠性方面将成为不能令人满意的结果。
导电性粒子9是直径为1微米到15微米的球状的粒子，也可以是直径在5微米以下的粒子。该导电性粒子9，作为高分子树脂是在其表面上形成了镍(Ni)和金(Au)的叠层膜的粒子。但是，并不限于此，也可以使用由镍(Ni)、钯(Pd)/锡(Sn)、金(Au)、银(Ag)、铜(Cu)等构成的单体金属粒子和合金粒子。
如上所述，由于在连接电极4上边设有热可塑性树脂5，故该半导体装置1可以防止连接电极4与空气之间的直接接触。因此，可以在连接电极4的表面上使用银(Ag)、铜(Cu)等的比较易于氧化的金属，可以降低造价。
此外，由于把导电性粒子9附着到热可塑性树脂5上之后再设于各个连接电极4上边，故在压接到基板上进行装配之际，可以使多个导电性粒子9仅仅在有连接电极4的地方与布线接触。因此，可以良好地保持装配半导体装置1时的电连接状态。
而且，连接电极4，如后述那样，采用用溅射法或真空蒸镀法形成的办法，可以使其高度的均一性改善，故与布线之间的接触状态成为均一性高的状态。因此，即便是在把半导体装置1装配到液晶显示面板的玻璃基板上的情况下，也可以确保良好的显示性能。
此外，该半导体装置1，由于是在连接电极4以外的部分上不存在导电性粒子9的构造，故作为装配时的绝缘性树脂(粘接剂)使用热固化型树脂或热可塑性树脂或光固化型树脂的情况下，会提高绝缘特性。
此外，由于仅仅在连接电极4上边设有导电性粒子9，故在连接电极4彼此之间，不会夹进导电性粒子9，因而可以提高各个连接电极间的电绝缘性。因此，即便是设置连接电极4的间隔狭窄，仍可以良好地保持绝缘性，所以可以实现用比以往更微细的节距进行的连接。
例如，在把该半导体装置1装配到液晶显示面板的玻璃基板上的情况下，与20微米～40微米的连接节距进行对应也就成为可能。
导电性粒子9，由于其大小也可以是比现有技术的直径还小的5微米，故可以使连接电极4的面积减小与之相应的量。这对于实现用与液晶显示面板的微细的象素节距对应的连接节距进行的连接也有贡献。
[制造方法的实施例1：图1～图8]
作为本发明的半导体装置的制造方法的实施例1，说明制造图1所示的半导体装置1的制造方法，
图2到图7的示意性剖面图依次示出了其制造工序，图1示出了用该工序制成的半导体装置。
首先，如图2所示，在半导体芯片1a的设有多个电极焊盘2的面上边，在厚度为0.5～5微米的范围内形成在各个电极焊盘上边具有开口部分3a的绝缘膜3。
该绝缘膜3，用等离子体化学汽相淀积(CVD)法，在半导体芯片1a的整个面上形成氮化硅(SiN)膜。然后，在该SiN膜上边涂敷感光性树脂，并用光刻法在与电极焊盘2对应的部分上形成开口，以该感光性树脂为掩模，对该SiN膜进行刻蚀，形成开口部分3a。
其次，如图3所示，用溅射法或真空蒸镀法，在半导体芯片1a的绝缘膜3的整个面上，形成0.5微米～10微米之间的大体上均一的膜厚的金属膜14。该金属膜14用单层的金属膜或多层的金属膜形成，理想的是用铬和铜的2层膜，或铬和铜和金的3层膜，或钛—钨合金与金的2层膜中的任何一者形成。
该金属膜14，通过绝缘膜3的各个开口部分3a与各个电极焊盘接触。同时，使下层成为与铝电极焊盘2贴紧性好的金属膜，使上层成为电导率高的金属膜。
接着，如图4所示，在金属膜14的整个面上，形成热可塑性的感光性树脂5的膜。然后，对该感光性树脂5，用进行暴光和显影处理的光刻法，如图5所示，在与各个电极焊盘2对应的位置上，使感光性树脂5图形化，使之形成比绝缘膜3的开口部分3a还大的掩模。
在这里，在作为掩模剩下的感光性树脂5与绝缘膜3的开口部分3a的大小相等或小一些的时候，在对金属膜14进行湿法刻蚀的情况下，由于在后述的金属膜14的刻蚀之际有可能同时刻蚀掉电极焊盘2的一部分，故使感光性树脂5图形化为在开口部分3a的周围覆盖2微米以上的大小。
在用干法刻蚀使金属膜14图形化的情况下，如果增大金属膜14和电极焊盘2之间的刻蚀选择比，则可以使作为掩模剩下的感光性树脂5的大小成为与绝缘膜3的开口部分3的大小相等或小一些。
接着，采用以该感光性树脂5为掩模对金属膜14进行刻蚀，除掉未被感光性树脂5覆盖的部分的办法，如图6所示，在被感光性树脂5覆盖起来的部分上，分别形成连接电极4。在该刻蚀处理之后也不除掉感光性树脂5。
然后，如图7所示，准备在上表面上以高密度载置多个导电性粒子9的平板30。另一方面，在内置有加热器41的加压加热工具40的下表面上，使已形成了感光性树脂5的面朝下地固定图6所示的半导体芯片1a。此时，半导体芯片1a用真空吸附法固定到加压加热工具40上。然后，使该加压加热工具40下降，把半导体芯片1a的感光性树脂5一侧推压到平板30上。
这样一来，借助于加压加热工具40内的加热器41的加热，热可塑性的感光性树脂5某种程度地软化，可以附着多个平板30上边的导电性粒子9。另外，平板30的感光性树脂5的个数，仅仅减少了进行该附着的那么大的量。采用经过该工序的办法，如图1所示，完成在各个连接电极4上边的感光性树脂5上分别附着上多个导电性粒子9的半导体装置1。
在附着该导电性粒子9的工序中，把加压的实际加重定为1～5kg，，把加热温度定为100℃，把加压时间定为5～10秒。
载置于平板30上边的导电性粒子9，理想的是以高密度附着到感光性树脂5上，在设连接电极4的面积为S1，并定义投影到压接后的导电性粒子9的压接方向上后所看到的面积为S2的情况下，在平板30上边排列的导电性粒子9的密度，理想的是至少要成为满足S1＞S2×10的关系。
在本实施例中，由于用溅射法或真空蒸镀法形成金属膜14，并对之进行刻蚀以形成连接电极4，故其高度(膜厚)的不均一性在0.5微米以下的范围内，可以得到不均一性非常小，大体上均一的连接电极。
而且，由于不再需要现有的电镀工艺，故还具有可以缩短工序的好处。
在上述的例子中，为了图示的方便，在半导体芯片1a上设置了2个连接电极4和已附着上导电性粒子9的感光性树脂5，但实际上在半导体芯片上将设置多个连接电极，故这种情况下，向感光性树脂5附着导电性粒子9的工序，示于图8，在该图8中，对与图7对应的部分赋予了同一标号。
在图8中，(a)示出了密密排列载置有多个导电性粒子9的平板30。(b)示出了使形成了连接电极4和感光性树脂5的半导体芯片1a的感光性树脂5一侧的面抵接到平板30上边的导电性粒子9上的状态。
(c)示出了正在用加压加热工具40对半导体芯片1a加压加热的状态。
(d)示出了从平板30上取下该半导体芯片1a，使多个导电性粒子9附着到各个感光性树脂5上，完成半导体装置1后的状态。
[半导体装置的装配方法：图9～图11]
其次，对把用上述的制造方法制造的图1所示的半导体装置装配到液晶显示面板的玻璃基板上的方法进行说明。
如图9所示，在液晶显示面板的布线17形成图形后的玻璃基板16上边的装配半导体装置1的位置上，用分配器涂敷密封用的绝缘性树脂，使布线17和半导体装置1的连接电极14进行位置对准后，从半导体装置1的背面一侧用加压加热工具40加压加热，使绝缘性树脂固化。
如图10的示，在从半导体装置1的背面一侧，用加压加热工具40进行加压加热时，各个连接电极4上边的感光性树脂5软化，在连接电极4和布线17双方已进行接触的状态下，把各个导电性粒子9夹进去。这时，已夹进去的导电性粒子9使连接电极4和布线17电导通，但未被夹进去的导电性粒子9则借助于感光性树脂5和绝缘性树脂13保持绝缘性。
另外，作为绝缘性树脂13，在使用已形成薄片状的绝缘性树脂的情况下，用加压工具压接配置于玻璃基板16上边。
在作为绝缘性树脂13使用热固化性或热可塑性的树脂的情况下，不再需要图10所示的光源灯泡50，但在使用光固化性树脂的情况下，则必须在保持对半导体装置1加压状态不变的状态下，从玻璃基板16的相反的一侧使光源灯泡50发光以向绝缘性树脂13照射光来使之固化。
图11示出的是这样地把半导体装置1装配到玻璃基板16上后的状态(装配构造)。
在该装配状态下，采用使半导体装置1的各个连接电极4和玻璃基板16上边的各个布线17之间具有含于感光性树脂5中的导电性粒子9相互接触的办法进行电连接，但是相邻的连接电极4彼此间则进行绝缘而不会因导电性粒子9而导通。
夹在连接电极4和布线17之间的导电性粒子9产生5～50％左右的变形，在该变形状态下，可以采用使绝缘性树脂13固化的办法，维持连接状态以维持良好的电导通。
不限于液晶显示面板的玻璃基板，把半导体装置1装配到内置于各种电子设备内的印制布线基板上的情况下，也是一样的。
[制造方法的实施例2：图12～图14]
其次，用图12～图14，对本发明的半导体装置的制造方法的实施例2进行说明。
在本实施例2中，到在半导体芯片1a的设有电极焊盘2的面上边形成绝缘膜3和金属膜14为止的工序，和用图2和图3说明的实施例1的情况是相同的。
在本实施例2中，如图12所示，在形成于半导体芯片1a的整个面上的金属膜14上边，涂敷已混入了多个导电性粒子9的热可塑性的感光性树脂6，形成树脂膜。
然后，与实施例1的情况下一样，用光刻法，如图13所示，使混入了导电性粒子9的感光性树脂6图形化，使得在半导体芯片1a的与各个电极焊盘2对应的部分上，形成比绝缘膜3的开口部分3a还大的掩模。
然后，采用以该感光性树脂6为掩模对金属膜14进行刻蚀的办法，如图14所示，在各个电极焊盘2上边形成连接电极4。
借助于此，完成在各个连接电极4上边设有混入了导电性粒子9的感光性树脂6的半导体装置1。因此，不再需要把导电性粒子9附着于实施例1中的感光性树脂5上的工序。
[制造方法的实施例3、4：图15～图17]
在本发明的半导体装置的制造方法的前边说过的实施例1、2中，在半导体芯片1a的具有电极焊盘2的面上边，用溅射法或真空蒸镀法形成绝缘膜3。对此，在实施例3、4中，如图15所示，仅仅在电极焊盘2的上部，用无电解电镀法形成由2层或3层的金属膜构成的连接电极4。
为此，在已形成了绝缘膜3的半导体芯片1a的整个面上，形成感光性树脂膜，对之进行暴光和显影处理后，在与各个电极焊盘2对应的位置上形成开口。然后，以该感光性树脂膜为掩模，进行例如镍(Ni)的无电解电镀，仅仅在其开口部分内形成镍膜，再进行金(Au)的无电解电镀，在镍膜上边形成金属膜，以形成2层膜的连接电极4。然后，除去掩模中所使用的感光性树脂，就成为图15所示的状态。
在实施例3中，如上所述，在各个电极焊盘2上边已形成了连接电极4的半导体芯片1a的整个面上，如图16所示，形成热可塑性的感光性树脂5的膜，对之进行暴光和显影处理后，进行图形化，使得仅仅剩下各个连接电极4上边的感光性树脂5，与实施例1的情况下一样，把导电性粒子9附着到该各个感光性树脂5上，由此完成与图1所示的半导体装置相同的半导体装置。
在实施例4中，如图15所示，在各个电极焊盘2上边已形成了连接电极4的半导体芯片的整个面上，如图17所示，形成已混入了导电性粒子9的热可塑性的感光性树脂6的膜，对之进行暴光和显影处理后，使之图形化为仅仅剩下各个连接电极4上边的混入了导电性粒子9的感光性树脂6，就可以完成与图14所示的半导体装置同样的半导体装置1。
这样制造的半导体装置，也可以进行与前边所说的半导体装置同样的处理，中介绝缘性树脂，确实地装配到玻璃基板或印制布线基板上边。
工业上利用的可能性
由以上的说明可知，倘采用本发明，通过设置与现有的半导体装置的凸点比较起来高度均一性极高的由金属膜形成的连接电极，在其上设置含有导电性粒子的热可塑性树脂，就可以仅仅在进行电连接所需的部位上以高密度预先设置导电性粒子。因此，作为导电性粒子可以使用直径5微米以下的粒子。借助于此，在把本发明的半导体装置装配到例如液晶显示面板的玻璃基板上的情况下，可以实现小于40微米的微细的连接节距下的装配构造。
此外，与现有的凸点不同，由于连接电极的高度用金属膜形成得低，故在把半导体装置热压接到基板上之际，可以抑制导电性粒子的流出，因而可以效果良好地把导电性小球捕捉到连接电极上边。
因此，本发明的半导体装置，除了液晶显示装置的驱动用IC，作为装载到各种电子设备的印制布线基板上的IC、LSI、门阵列等的各种半导体装置是有效的。

Claims (9)

1.一种半导体装置，其特征是：
具备：
设于半导体芯片上边，在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜；
在该绝缘膜上边设置的多个连接电极，使之分别通过上述各个开口部分与各个电极焊盘接触；以及
分别在该连接电极上边设置的热可塑性树脂，
且该各个树脂具有多个导电性粒子。
2.权利要求1所述的半导体装置，其特征是：上述连接电极，用铬和铜的2层膜构成
3.权利要求1所述的半导体装置，其特征是：上述连接电极，用铬和铜和金的3层膜构成。
4.一种半导体装置的制造方法，其特征是具有下述工序：
在半导体芯片上边，形成在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜的工序；
在该绝缘膜上边，形成通过上述各个开口部分与各个电极焊盘接触的金属膜的工序；
在该金属膜上边的大致整个面上形成热可塑性的感光性树脂膜，并用光刻方法，在与上述各个电极焊盘对应的位置上形成掩模的工序；
用刻蚀法除去未被由上述金属膜的上述感光性树脂构成的掩模覆盖起来的部分，在被上述掩模覆盖起来的部分上，分别形成与上述电极焊盘接触的连接电极的工序；以及
把导电性粒子附着到上述感光性树脂上的工序。
5.权利要求4所述的半导体装置的制造方法，其特征是：在形成上述金属膜的工序中，在上述半导体芯片的形成了上述绝缘膜的面的整个面上，用溅射法或真空蒸镀法，形成由铬和铜的2层膜或铬和铜和金的3层膜构成的金属膜。
6.一种半导体装置的制造方法，其特征是具有下述工序：
在半导体芯片上边，形成在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜的工序；
在该绝缘膜上边，形成通过上述各个开口部分与各个电极焊盘接触的金属膜的工序；
在该金属膜上边的大致整个面上形成含有导电性粒子的热可塑性的感光性树脂膜，并用光刻方法，在与上述各个电极焊盘对应的位置上形成掩模的工序；以及
用刻蚀法除去未被由上述金属膜的上述感光性树脂构成的掩模覆盖起来的部分，在被上述掩模覆盖起来的部分上，分别形成与上述电极焊盘接触的连接电极的工序。
7.权利要求6所述的半导体装置的制造方法，其特征是：在形成上述金属膜的工序中，在上述半导体芯片的形成了上述绝缘膜的面的整个面上，用溅射法或真空蒸镀法，形成由铬和铜的2层膜或铬和铜和金的3层膜构成的金属膜。
8.一种半导体装置的制造方法，其特征是具有下述工序：
在半导体芯片上边，形成在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜的工序；
用无电解电镀法，在该绝缘膜上边，分别形成通过上述各个开口部分与各个电极焊盘接触的多个连接电极的工序；
在上述各个连接电极上边，分别设置热可塑性的树脂的工序；以及
把导电性粒子附着到该各个热可塑性的树脂上的工序。
9.一种半导体装置的制造方法，其特征是具有下述工序：
在半导体芯片上边，形成在该半导体芯片的多个输入输出端子用电极焊盘上分别具有开口部分的绝缘膜的工序；
用无电解电镀法，在该绝缘膜上边，分别形成通过上述各个开口部分与各个电极焊盘接触、且比该开口部分还大的多个连接电极的工序；
在上述多个连接电极上边分别设置含有导电性粒子的热可塑性的树脂的工序。
CN98808360A 1997-08-21 1998-08-21 半导体装置及其制造方法 Pending CN1267395A (zh)

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CN111293103A (zh) * 2018-12-07 2020-06-16 南亚科技股份有限公司 半导体装置

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