CN1258211C - 门氧化膜形成用硅化铪靶及其制造方法 - Google Patents
门氧化膜形成用硅化铪靶及其制造方法 Download PDFInfo
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- CN1258211C CN1258211C CNB028117050A CN02811705A CN1258211C CN 1258211 C CN1258211 C CN 1258211C CN B028117050 A CNB028117050 A CN B028117050A CN 02811705 A CN02811705 A CN 02811705A CN 1258211 C CN1258211 C CN 1258211C
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- Prior art keywords
- gate oxide
- hfsi
- targe
- powder
- hafnium
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- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 18
- 238000002360 preparation method Methods 0.000 title description 2
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims description 50
- 239000002245 particle Substances 0.000 claims description 28
- 238000007731 hot pressing Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 13
- 229910004129 HfSiO Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 description 27
- 239000012071 phase Substances 0.000 description 23
- 206010010144 Completed suicide Diseases 0.000 description 21
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 18
- 229910021332 silicide Inorganic materials 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 15
- 238000005245 sintering Methods 0.000 description 13
- 238000006356 dehydrogenation reaction Methods 0.000 description 10
- 150000002362 hafnium Chemical class 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000011863 silicon-based powder Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5427—Particle size related information expressed by the size of the particles or aggregates thereof millimeter or submillimeter sized, i.e. larger than 0,1 mm
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- C04B2235/721—Carbon content
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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Abstract
Description
Claims (7)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP217586/2001 | 2001-07-18 | ||
JP2001217586 | 2001-07-18 | ||
JP2002105905A JP3995082B2 (ja) | 2001-07-18 | 2002-04-09 | ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法 |
JP105905/2002 | 2002-04-09 |
Publications (2)
Publication Number | Publication Date |
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CN1515029A CN1515029A (zh) | 2004-07-21 |
CN1258211C true CN1258211C (zh) | 2006-05-31 |
Family
ID=26618909
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CNB028117050A Expired - Fee Related CN1258211C (zh) | 2001-07-18 | 2002-06-05 | 门氧化膜形成用硅化铪靶及其制造方法 |
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US (2) | US7517515B2 (zh) |
EP (1) | EP1408541B1 (zh) |
JP (1) | JP3995082B2 (zh) |
KR (1) | KR100694482B1 (zh) |
CN (1) | CN1258211C (zh) |
TW (1) | TW574390B (zh) |
WO (1) | WO2003009367A1 (zh) |
Families Citing this family (14)
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US6986834B2 (en) * | 2002-08-06 | 2006-01-17 | Nikko Materials Co., Ltd. | Hafnium silicide target and manufacturing method for preparation thereof |
US7287412B2 (en) * | 2003-06-03 | 2007-10-30 | Nano-Proprietary, Inc. | Method and apparatus for sensing hydrogen gas |
JP4388263B2 (ja) * | 2002-09-11 | 2009-12-24 | 日鉱金属株式会社 | 珪化鉄スパッタリングターゲット及びその製造方法 |
JP4526758B2 (ja) * | 2002-09-11 | 2010-08-18 | 日鉱金属株式会社 | 珪化鉄粉末及びその製造方法 |
DE602004029768D1 (de) * | 2003-03-07 | 2010-12-09 | Nippon Mining Co | Target aus hafniumlegierung und dessen herstellungsverfahren |
DE602004027052D1 (de) * | 2003-07-25 | 2010-06-17 | Nikko Materials Co Ltd | Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium |
EP2017360B1 (en) * | 2003-11-19 | 2012-08-08 | JX Nippon Mining & Metals Corporation | High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium |
KR100613098B1 (ko) * | 2004-12-29 | 2006-08-16 | 동부일렉트로닉스 주식회사 | 반도체 소자의 게이트 산화막 제조 방법 |
EP1930451B9 (en) * | 2005-07-07 | 2011-10-26 | Nippon Mining & Metals Co., Ltd. | High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafnium |
WO2010048975A1 (de) * | 2008-10-31 | 2010-05-06 | Leybold Optics Gmbh | Hafniumoxid-beschichtung |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
KR101110871B1 (ko) * | 2009-06-09 | 2012-02-15 | 주식회사 아롱엘텍 | 두피 마사지기 |
US8787066B2 (en) * | 2011-10-26 | 2014-07-22 | Intermolecular, Inc. | Method for forming resistive switching memory elements with improved switching behavior |
CN103231185B (zh) * | 2013-04-03 | 2014-12-10 | 株洲宏大高分子材料有限公司 | 一种HFSi焊销及其制备方法 |
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US4619697A (en) * | 1984-08-30 | 1986-10-28 | Mitsubishi Kinzoku Kabushiki Kaisha | Sputtering target material and process for producing the same |
JPS6272122A (ja) * | 1985-09-25 | 1987-04-02 | Nec Corp | 高融点金属シリサイドの形成方法 |
JP2594794B2 (ja) * | 1987-08-06 | 1997-03-26 | 株式会社ジャパンエナジー | シリサイドターゲットとその製造方法 |
JPS6439374U (zh) | 1987-09-04 | 1989-03-09 | ||
US5209835A (en) | 1988-03-03 | 1993-05-11 | Asahi Glass Company Ltd. | Method for producing a specified zirconium-silicon amorphous oxide film composition by sputtering |
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
JP2907907B2 (ja) * | 1988-12-21 | 1999-06-21 | 株式会社東芝 | スパッタリング用ターゲットおよびその製造方法 |
US5294321A (en) | 1988-12-21 | 1994-03-15 | Kabushiki Kaisha Toshiba | Sputtering target |
KR940008936B1 (ko) | 1990-02-15 | 1994-09-28 | 가부시끼가이샤 도시바 | 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법 |
WO1991018125A1 (en) | 1990-05-15 | 1991-11-28 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
JPH05214523A (ja) | 1992-02-05 | 1993-08-24 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
DE4214719C2 (de) * | 1992-05-04 | 1995-02-02 | Starck H C Gmbh Co Kg | Verfahren zur Herstellung feinteiliger Metall- und Keramikpulver |
JPH0616412A (ja) * | 1992-06-26 | 1994-01-25 | Mitsubishi Materials Corp | 高融点金属シリサイドの製造方法 |
JP2794382B2 (ja) | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
JPH0874045A (ja) * | 1994-09-12 | 1996-03-19 | Mitsubishi Materials Corp | 成膜中にパーティクル発生の少ないスパッタリング用Coシリサイド焼結ターゲット材 |
JPH0820863A (ja) | 1995-06-12 | 1996-01-23 | Toshiba Corp | シリサイド膜およびその膜を使用した半導体装置 |
KR0169379B1 (ko) * | 1995-10-06 | 1999-02-01 | 김광호 | 터미날 고상용액을 형성하는 알루미늄-하프늄 합금을 이용한 게이트 전극의 제조방법 |
AT1669U1 (de) * | 1996-11-22 | 1997-09-25 | Plansee Ag | Oxidationsschutzschicht für refraktärmetalle |
JP3792007B2 (ja) * | 1997-06-12 | 2006-06-28 | 株式会社日鉱マテリアルズ | スパッタリングターゲットの製造方法 |
EP1028824B1 (en) | 1997-07-15 | 2002-10-09 | Tosoh Smd, Inc. | Refractory metal silicide alloy sputter targets, use and manufacture thereof |
JP2000188400A (ja) | 1998-11-09 | 2000-07-04 | Texas Instr Inc <Ti> | 半導体デバイスを形成する方法 |
JP2000208508A (ja) * | 1999-01-13 | 2000-07-28 | Texas Instr Inc <Ti> | 珪酸塩高誘電率材料の真空蒸着 |
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JP4501250B2 (ja) * | 2000-06-19 | 2010-07-14 | 日鉱金属株式会社 | 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット |
JP4596379B2 (ja) | 2001-07-09 | 2010-12-08 | Jx日鉱日石金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット |
US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
US6986834B2 (en) | 2002-08-06 | 2006-01-17 | Nikko Materials Co., Ltd. | Hafnium silicide target and manufacturing method for preparation thereof |
DE602004029768D1 (de) | 2003-03-07 | 2010-12-09 | Nippon Mining Co | Target aus hafniumlegierung und dessen herstellungsverfahren |
DE602004027052D1 (de) | 2003-07-25 | 2010-06-17 | Nikko Materials Co Ltd | Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium |
EP2017360B1 (en) | 2003-11-19 | 2012-08-08 | JX Nippon Mining & Metals Corporation | High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium |
-
2002
- 2002-04-09 JP JP2002105905A patent/JP3995082B2/ja not_active Expired - Fee Related
- 2002-06-05 KR KR1020047000571A patent/KR100694482B1/ko active IP Right Grant
- 2002-06-05 EP EP02733313A patent/EP1408541B1/en not_active Expired - Lifetime
- 2002-06-05 US US10/480,319 patent/US7517515B2/en not_active Expired - Fee Related
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- 2002-06-05 CN CNB028117050A patent/CN1258211C/zh not_active Expired - Fee Related
- 2002-06-11 TW TW91112590A patent/TW574390B/zh not_active IP Right Cessation
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2009
- 2009-03-03 US US12/396,716 patent/US7674446B2/en not_active Expired - Fee Related
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US7674446B2 (en) | 2010-03-09 |
JP2003096560A (ja) | 2003-04-03 |
US20040170552A1 (en) | 2004-09-02 |
EP1408541A1 (en) | 2004-04-14 |
EP1408541A4 (en) | 2007-07-18 |
WO2003009367A1 (fr) | 2003-01-30 |
US20090194898A1 (en) | 2009-08-06 |
JP3995082B2 (ja) | 2007-10-24 |
CN1515029A (zh) | 2004-07-21 |
KR20040015359A (ko) | 2004-02-18 |
EP1408541B1 (en) | 2012-11-28 |
TW574390B (en) | 2004-02-01 |
KR100694482B1 (ko) | 2007-03-12 |
US7517515B2 (en) | 2009-04-14 |
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