TW574390B - Hafnium silicide target for forming gate oxide film and method for preparation thereof - Google Patents
Hafnium silicide target for forming gate oxide film and method for preparation thereof Download PDFInfo
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- TW574390B TW574390B TW91112590A TW91112590A TW574390B TW 574390 B TW574390 B TW 574390B TW 91112590 A TW91112590 A TW 91112590A TW 91112590 A TW91112590 A TW 91112590A TW 574390 B TW574390 B TW 574390B
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- oxide film
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- 238000000034 method Methods 0.000 title claims description 8
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 title abstract description 7
- 238000002360 preparation method Methods 0.000 title description 2
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 58
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 58
- 239000000843 powder Substances 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000007731 hot pressing Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- -1 C · 300 ppm or less Substances 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052681 coesite Inorganic materials 0.000 abstract description 14
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 14
- 229910052682 stishovite Inorganic materials 0.000 abstract description 14
- 229910052905 tridymite Inorganic materials 0.000 abstract description 14
- 229910004129 HfSiO Inorganic materials 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000013077 target material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 61
- 239000002245 particle Substances 0.000 description 29
- 239000012071 phase Substances 0.000 description 25
- 238000011049 filling Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 238000006356 dehydrogenation reaction Methods 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011863 silicon-based powder Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009837 dry grinding Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JCBNMVUSYPTHJY-UHFFFAOYSA-N [Ti].[Ar] Chemical compound [Ti].[Ar] JCBNMVUSYPTHJY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
- C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
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- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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Description
574390 A7 —^ --21--- 五、發明說明(/ ) [技術領域] 本發明係關於一種對於可做爲高介電體閘極絕緣膜使 用之HfSiO膜以及HfSiON膜之形成上爲適宜之富有加工 性、耐脆化性等之給矽化物靶及其製造方法。又’於本說 明書中所使用之單位「ppm」全部代表wtppm。 [背景技術] 介電體閘極絕緣膜之膜厚會大幅地影響M0S電晶體 之性能,在與矽基板之界面必須呈現電性穩定、載體之遷 移度不致惡化。 以往,做爲此種閘極絕緣膜係使用Si〇2膜,從界面特 性來看確爲最優之材料。又,做爲閘極絕緣膜使用之Si〇2 膜其具有厚度愈薄則載體(亦即電子或電洞)的數量愈增加 而可增加汲極電流(drain current)之特性。 基於此種特性,閘極Si02膜每當因配線之微細化造成 電源電壓下降之情況,在不致損及絕緣破壞之可靠性的範 圍下,多將其薄膜化。惟,一旦閘極Si02膜成爲3mn以下 ,則會流過直接穿隧漏電流,而出現無法當作絕緣膜來作 用之問題。 另一方面,仍欲謀求電晶體之更加微細化,但只要如 前述般做爲閘極絕緣膜之Si02膜的膜厚受到限制,則電晶 體之微細化無法邁進,從而出現電晶體性能無法獲得改善 之問題。 又,爲了降低LSI之電源電壓、降低消耗電力,有必 要將閘極絕緣膜做進一步的薄層化,惟一旦Si02膜成爲 3 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) • 1 I I I 1 I I 訂----I I I I 一 A7 574390 ______B7 五、發明說明(>) 3nm以下則如上述般有閘極絕緣膜破壞之問題,所以在薄 膜化方面有其極限。 鑒於以上情事,近來乃取代Si02膜改針對高介電體閘 極絕緣膜進行探討。此高介電體閘極絕緣膜中受到矚目者 有HfSiO膜以及HfSiON膜。 此高介電體閘極絕緣膜能以較厚之膜來得到與Si02膜 同等之電容,可抑制穿隧漏電流之發生,此爲其特徵所在 。又,由於可視爲在Si02添加Hf,所以預期在界面特性 上也和Si02接近。 是以,乃需要得到一種濺鍍靶,來輕易、安定地形成 品質優良之HfSiO以及HfSiON高介電體閘極絕緣膜。 [發明之揭示] 本發明爲了解決上述問題,其課題在於提供一種對於 可做爲高介電體閘極絕緣膜(具備替代Si02膜之特性)使用 之HfSiO膜以及HfSiON膜之形成上爲適宜之富有加工性 、耐脆化性等之給矽化物靶及其製造方法。 本發明係提供: 1. 一種閘極氧化膜形成用給矽化物靶,係由HfSiu^ 2.〇〇所構成(在此組成比中,不包含Si : 1.02。亦即,僅Si 之下限値超過1.02。此於本說明書中皆同樣)。 2. —種閘極氧化膜形成用飴矽化物靶,係由 2.00所構成’且具備以HfSi相以及HfSi2相爲主之混相。 3. 如上述第1或2項之閘極氧化膜形成用給矽化物靶 ,其相對密度在95%以上。 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公爱^ (請先閱讀背面之注意事項再填寫本頁) ί I I--— —訂 --------線- A7 574390 ___B7__ 五、發明說明(f ) 則是和做爲基材之Si基板的整合性佳,又由於容易成爲非 晶性結構,所以有漏電流減少之特徵。 基於以上之情事,依據使用目的來考慮並決定介電係 數與漏電流之平衡是必要的。又,於元件之製造程序中被 要求分別固有之相容性(適合性),所以必須有可依必要性 來任意變更Hf與Si之組成比的材料。 將給與矽之混合物粉加以燒結之情況,依組成比之不 同,會成爲HfSi相、HfSi2相等之矽化物相與Hf相、Si相 等之混晶,一般,這些當中之化合物給矽化物,因其熔點 高而於燒結時無法充分地提升密度,成爲孔洞之組織燒結 體,而有產生許多粒子之問題。 再者,若不依照組成比來調整熱壓條件(亦即加熱溫度 與壓力),則無法得到最適密度之靶。 本發明基於密度提升之目標進而硏究改良,終於成功 地獲得可適宜當作閘極絕緣膜形成用給矽化物靶之物。 本發明,係採用了考量到介電係數與漏電流之平衡之 由HfSihOW.QQ所構成之聞極絕緣膜形成用給砂化物祀。此 給矽化物靶係具備以HfSi相以及HfSi2相爲主之混相,可 得到孔洞組織消失、相對密度在95%以上之給矽化物靶。 若相對密度未滿95%,則密度不足、脆性下降且加工 性也變差。再者脆性結晶會因爲破壞飛散引起粒子增加。 是以,以上述範圍爲佳。 閘極氧化膜形成用給矽化物靶中之氧含量以 500〜lOOOOppm爲佳。若氧未滿500ppm,則耙製造中有起 6 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) >1裝 ί n n 一:OJ· 1 1MI ϋ I ϋ ϋ A7 574390 五、發明說明(() 火之危險性,相反地若超過l〇〇〇〇ppm則祀中之氧會以氧 化物的形式析出而成爲濺鍍中之異常放電的原因,粒子會 增加導致製品良率下降。 又’靶中之锆的含有量以抑制在2.5重量%以下爲佳 。若錐量超過2.5重量%,則用以形成氧化膜之反應性濺鍍 時之電壓、電流、基板溫度等的程序條件會大幅變動,非 所喜好者。 再者,閘極氧化膜形成用給矽化物靶中之雜質以C : 300ppm 以下、Ti : lOOppm 以下、Mo : 100ppnl 以下、W :lOppm 以下、Nb : lOppm 以下、Fe : lOppm 以下、Ni ·· lOppm 以下、Cr : lOppm 以下、Na : O.lppm 以下、K : O.lppm 以下、U ·· O.Olppm 以下、Th : O.Olppm 以下爲佳 。因爲這些雜質會成爲閘極與下部Si基板部之污染源。 在製造由HfSiiow.oo所構成之在耐脆化性優異之閘極 氧化膜形成用給矽化物靶之時,係合成出由HfSh .02-2.00 所 構成之組成的粉末,將之以1400°C〜1535°C做熱壓來製造 。若未滿1400°C密度無法充分提升,若超過1535°C則開始 出現部份熔解,固非所喜好者。 於合成出由HfSii^^.oo所構成之組成的粉末之際,係 讓氫化給粉與Si粉以1 : 1.02〜1 : 2.00之莫爾比來調製、 混合之後,在600°C〜800°C進行燒成。 雖也曾考慮使用Hf粉,惟Hf粉具強氧化力,一經粉 末化會出現起火的問題,故非所好者。 是以,爲了防止此種起火,係使用氫化給。氫化給粉 7 紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公楚) (請先閱讀背面之注意事項再填寫本頁) --------訂---------線成 A7 574390 ____B7_ 五、發明說明(^ ) 以及矽粉以微粉碎至低於100網眼來使用爲佳。藉由使用 此種微細粉,可達成燒結時之高密度化。 藉由上述燒成之際的加熱來進行脫氫與矽化物化。脫 氫係自約600°c起發生。燒結係在真空中(ΐχΐ〇_4〜ΐχΐ〇_ 2Torr)進行,爲了脫氫呈現若干氫環境氣氛。 又,加熱到800°C來結束脫氫,且因Hf金屬而有起火 之虞的部分係進行矽化物化或是使之燒結到無起火之虞之 地步(大約3μπι以上)。 如上述般,在加熱合成之際,藉由在低溫下進行脫氫 與矽化物化,可抑制粒子生長,燒成粉之一次粒子仍呈現 微細狀態,於成型之際可高密度化。燒成粉一旦巨大化, 則燒結前之微粉碎困難,會引發巨大粒子之殘存以及密度 下降。 如上所述,由於在低溫進行燒成,乃具有可抑制結晶 粒子之生長的重大特徵,可將閘極氧化膜形成用給矽化物 靶之平均結晶粒徑調整成爲5〜200μιη。於是,於燒結之際 可達成高密度化。 平均結晶粒徑未滿5μιη之粑,其氧含量要控制在 lOOOOppm以下係困難的,又在製程中有起火之虞,另超過 200μηι的情況下,由於粒子會增加,製品良率會降低,所 以上述平均結晶粒徑以控制在5〜200μηι爲佳。 藉由上述之由HfSiuw.oo所構成之組成的粉末之合成 、以及使其於1400°C〜1535°C進行熱壓,可達成燒結時之 高密度化。 8 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---------線秦 A7 574390 ___B7_—____ _ 五、發明說明(j ) 上述熱壓之溫度爲合成粉之液相生成正下方之溫度’ 在此溫度範圍之燒結係重要的。藉此,可得到相對密度達 95%以上之高密度化之給矽化物靶。 經高密度化之本發明的給矽化物靶,具有可防止濺鍍 中因孔洞而產生粒子等之效果。 實施例 以下說明實施例。又,本實施例僅代表發明之一例, 本發明並不受限於該等實施例。亦即,於本發明之技術思 想所含之其他的態樣以及變形亦包含在本發明中。 (實施例1) 將100網眼以下之HfH2粉與100網眼以下之Si粉混 合,在真空中、800°C加熱,藉此一倂進行脫氫反應與矽化 物合成反應,得到HfSi^之合成粉。 將此給矽化物粉加以粉碎,得到100網眼以下之給矽 化物粉末。此時,亦可加入事先合成完畢之給矽化物粉。 此給矽化物粉末經XRD可確認爲由HfSi相以及HfSi2相 之混相所構成。 使用該矽化物粉末,於1500°C以300kg/cm2x2小時之 條件藉由熱壓法來得到密度99.3%之燒結體。將該燒結體 進一步以機械加工製作出(|)300mmx6.35mm t之耙。可得到 幾乎沒有孔洞之組織。 使用以上述方式所製作之靶進行濺鍍,測定6英吋型 晶圓上之粒子,結果發現,0.2μπι以上之尺寸的粒子合計 爲12個,粒子產生顯著地降低了。 9___ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 ϋ I ϋ n^0J· I ϋ n ϋ ϋ ϋ I # A7 574390 ____B7__ 五、發明說明(f ) (請先閱讀背面之注意事項再填寫本頁) 由以上可知,本發明可得到富有加工性、耐脆化性等 之給矽化物靶。再者由於可適用於濕式加工,所以在加工 中完全沒有起火的危險性。 (實施例2) 將100網眼以下之HfH2粉與1〇〇網眼以下之Si粉混 合,在真空中、800°C加熱,藉此一倂進行脫氫反應與矽化 物合成反應,得到HfSih5之合成粉。 將此給矽化物粉加以粉碎,得到100網眼以下之給矽 化物粉末。此時,亦可加入事先合成完畢之給矽化物粉。 此給矽化物粉末經XRD可確認爲由HfSi相以及HfSi2相 之混相所構成。 使用該給矽化物粉末,於1420°C以300kg/cm2x2小時 之條件藉由熱壓法來得到密度99.8%之燒結體。將該燒結 體進一步以機械加工製作出φ300ηπηχ6.35mm t之耙。 使用以上述方式所製作之給矽化物靶進行濺鍍,測定 6英吋型晶圓上之粒子,結果發現,0.2μιη以上之尺寸的粒 子合計爲18個,粒子產生顯著地降低了。 由以上可知,本發明可得到富有加工性、耐脆化性等 之給矽化物靶。再者在加工中完全沒有起火的危險性。 (實施例3) 將100網眼以下之HfH2粉與100網眼以下之Si粉混 合,在真空中、800°C加熱,藉此一倂進行脫氫反應與矽化 物合成反應,得到HfSi^之合成粉。 將此給矽化物粉加以粉碎,得到1〇〇網眼以下之飴矽 10 一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) A7 574390 五、發明說明(jo 化物粉末。此時,亦可加入事先合成完畢之給矽化物粉。 此給矽化物粉末經XRD可確認爲由HfSi相以及HfSi2相 之混相所構成。 使用該給矽化物粉末,於1520°C以300kg/cm2x2小時 之條件藉由熱壓法來得到密度98.4%之燒結體。將該燒結 體進一步以機械加工製作出(|)300mmx6.35mm t之耙。 使用以上述方式所製作之給矽化物靶進行濺鍍,測定 6英吋型晶圓上之粒子,結果發現,〇.2μηι以上之尺寸的粒 子合計爲20個,粒子產生顯著地降低了。 由以上可知,本發明可得到富有加工性、耐脆化性等 之給矽化物靶。再者在加工中完全沒有起火的危險性。 (比較例1) 將100網眼以下之HfH2粉與100網眼以下之Si粉混 合,在真空中、80(TC加熱,藉此一倂進行脫氫反應與矽化 物合成反應,得到HfSiu之合成粉。將此給矽化物粉加以 粉碎,得到100網眼以下之給矽化物粉末。此給矽化物粉 末經XRD可確認爲由HfSi相以及HfSi2相之混相所構成 〇 使用該給矽化物粉末,於1500°C以120kg/cm2x2小時 之條件藉由熱壓法來得到燒結體。以此方式所得之燒結體 ,爲92.7%之低密度物。將該燒結體進一步以機械加工製 作出(j)300mmx6.35mm t 之耙。 本靶之密度低,所以存在著孔洞。是以,在製作於實 用元件製作上所使用之靶之際的加工,對於加工液之污染 _ 11 ___ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) <請先閱讀背面之注意事項再填寫本頁) 裝
H ϋ ϋ n 一一OJ· ·.1 n ϋ ϋ H ϋ I 574390 A7 _____B7 _ 五、發明說明(ft)) 的去除極爲困難,所以無法以濕式磨削來進行。因此,爲 了防止加工粉之起火,必須採用在惰性環境氣氛中進行乾 式磨削此種特別的對策。 使用以上述方式所製作之靶進行濺鍍,測定6英吋型 晶圓上之粒子’結果發現,〇.2μιη以上之尺寸的粒子合計 爲270個。再者,靶面外圍部出現了許多被稱爲結球之突 起。 如上所述,在超過本發明之範圍的高溫下進行燒結, 無法達成密度提升,又會產生許多粒子、 (比較例2) 將100網眼以下之HfH2粉與1〇〇網眼以下之Si粉混 合,在真空中、800°C加熱,藉此一倂進行脫氫反應與矽化 物合成反應,得到HfSi^之合成粉。 將此給矽化物粉加以粉碎,得到100網眼以下之給矽 化物粉末。此鉛矽化物粉末經XRD可確認爲由HfSi相以 及HfSi2相之混相所構成。 使用該給矽化物粉末,於1380°C以300kg/cm2x2小時 之條件藉由熱壓法來得到燒結體。以此方式所得之燒結體 ,爲90.6%之低密度物。將該燒結體進一步以機械加工製 作出(|)300mmx6.35mm t 之耙。 本靶之密度低,所以存在著貫通孔洞。是以,在製作 於實用元件製作上所使用之靶之際的加工,對於加工液之 污染的去除極爲困難,所以無法以濕式磨削來進行。因此 ,爲了防止加工粉之起火,必須採用在惰性環境氣氛中進 12 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) --裝 ----訂---------線Λ A7 574390 _____B7_ 五、發明說明(fj ) 行乾式磨削此種特別的對策。 使用以上述方式所製作之靶進行濺鍍,測定6英吋型 晶圓上之粒子,結果發現,〇·2μηι以上之尺寸的粒子合計 爲490個。再者,出現了許多結球。 如上所述,在超過本發明之範圍的高溫下進行燒結之 密度過低,又會產生許多粒子。 實施例1〜3之靶的相對密度爲95%以上。又,粒子數 目在20個以下。再者,於1400°C〜1535°C之最適熱壓條件 下,同樣地可達成相對密度之提升。 如此,確認Hf : Si之比爲1 ·· 1.02〜2_00之給矽化物 靶可藉由上述條件般來提升燒結體之密度,且可安定地被 製造。 相對於此,比較例1之相對密度低達92.7%。其結果 ,粒子數目爲270個,且出現結球,爲不佳之結果。 又,比較例2之相對密度低達90.6%。其結果,粒子 數目爲490個,同樣地出現結球,爲不佳之結果。 由以上可知,本發明之實施例的優越性相當明顯,可 知具有優異的特性。 [發明之效果] 本發明具有下述特徵:可得到一種給矽化物靶,其對 於可做爲高介電體閘極絕緣膜(具備替代Si02膜之特性)使 用之HfSiO膜以及HfSiON膜之形成上爲適宜,且富有加 工性、耐脆化性等。 本發明之給矽化物靶的相對密度在95%以上屬高密度 13 ^紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公f (請先閱讀背面之注意事項再填寫本頁) I --------訂---------線義 574390 A7 ___B7___ 五、發明說明(|Y) V 物,擁有.優異的強度。 又,高密度化之本發明的給矽化物靶,可防止於濺鍍 中因孔洞所導致之粒子產生以及因脆性組織之破壞飛散所 導致之粒子產生,於靶之加工與製造過程中不會起火,此 爲其顯著效果所在。 (請先閱讀背面之注意事項再填寫本頁) I --------訂---------線秦 14 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 申請曰期 __江1、c?(p、11_ 案 號 9/i/ ^rf° 類 別 C^clL·· Η〇/ύ%ί (以上各攔由本局填註) 「92. 4· 14,錄正
年 a” 'J ] 丨
It·' ·»*» 1,-., ^ 4 '* 丄.:::'」 574390 集^專利説明書 發明 一、新型名稱 中 文 閫極氬化腾形成用紿矽化物靶及其製浩卞法 英 文 HAFNIUM SILICIDE TARGET FOR FORMING GATE OXIDE FILM AND METHOD FOR PREPARATION THEREOF 姓 名 ⑴入間田修一 (2齡木了 一 發明 創作 國 籍 曰本 住、居所 (1X2)日本茨城縣北茨城市華川町臼場187番地4 曰鑛材料股份有限公司磯原工場內 姓 名 (名稱) 曰鑛材料股份有限公司 國 籍 曰本 三、申請人 住、居所 (事務所) 曰本東京都港區虎門2-KM 代表人 姓 名 鈴木孝 訂 線 本紙度適用中國國( CNS ) A4規格( 210x197公釐) 裝
574390 A7 _B7 五、發明說明() 4. 如上述第1或2項之閘極氧化膜形成用給矽化物靶 ,其氧含有量爲500〜lOOOOppm。 5. 如上述第1或2項之閘極氧化膜形成用鉛矽化物靶 ,其中,鉻含有量在2.5重量%以下。 6·如上述第1或2項之閘極氧化膜形成用飴矽化物靶 ,其中,雜質中之C : 300ppm以下、Ti : 100ppm以下、 Mo : lOOppm 以下、W : lOppm 以下、Nb : lOppm 以下、 Fe ·· lOppm 以下、Ni ·· lOppm 以下、Cr : lOppm 以下、Na :O.lppm 以下、K : O.lppm 以下、u : O.Olppm 以下、Th :O.Olppm 以下。 7·如上述第1或2項之閘極氧化膜形成用鈴矽化物靶 ,其平均結晶粒徑爲5〜200μιη。 8·—種閘極氧化膜形成用給矽化物靶之製造方法,係 合成出由HfSi^w.oo所構成之組成的粉末,將該粉末粉碎 到1〇〇篩目以下,然後以1400°C〜1535°C予以熱壓。 9·如上述第8項之閘極氧化膜形成用飴矽化物靶之製 造方法,係以150〜2000kgf/cm2進行熱壓。 [發明之實施形態] 具備有替代Si02膜之特性的高介電體閘極絕緣膜,係 使用HfSi祀以氧反應性濺鍍所形成。此氧化物膜被視爲以 ΗίΌ2 · Si〇2所表示之氧化物膜的混成體或是其氧的一部分 被氮取代之膜,在靶方面通常係要求具有si/Hf=1.〇之組成 。一般Hf與Si之組成比被要求接近於所欲形成之膜的組 成比’富Hf之氧化膜有電容率高之傾向,富si之氧化膜 5 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) (請先閱讀背面之注意事項再填寫本頁) I · I I I--I I 訂-------I I .
Claims (1)
- 57439〇申請專利範圍 1· 一種閘極氧化膜形成用給矽化物靶’係由HfSh.02-2.0〇所構成,且相對密度在95%以上。 2·—種閘極氧化膜形成用給矽化物靶,係由HfSiKo^ 2.〇〇所構成,具備以HfSi相以及HfSi2相爲主之混相,且相 對密度在95%以上。 3.如申請專利範圍第1或2項之閘極氧化膜形成用飴 矽化物靶,其氧含有量爲500〜lOOOOppm。 4·如申請專利範圍第1或2項之閘極氧化膜形成用給 矽化物靶,其中,锆含有量在2.5重量%以下。 5·如申請專利範圍第1或2項之閘極氧化膜形成用給 矽化物靶,其中,雜質中之C ·· 300ppm以下、Ti ·· l〇0ppm 以下、Mo : lOOppm 以下、W : lOppm 以下、Nb : i〇ppm 以下、Fe : lOppm 以下、Ni : lOppm 以下、Cr : 10ppm 以 下、Na ·· O.lppm 以下、K ·· O.lppm 以下、U ·· 〇.〇lppm 以 下、Th : O.Olppm 以下。 6·—種閘極氧化膜形成用給矽化物靶之製造方法,係 合成出由HfSiro^.oo所構成之組成的粉末,將該粉末粉碎 到100 篩目以下,然後以1400 °C〜1535七、 150〜2000kgf/cm2進行熱壓或是熱均壓(HIP)。 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐〉
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1528120B1 (en) * | 2002-08-06 | 2011-04-13 | Nippon Mining & Metals Co., Ltd. | Hafnium silicide target and method for preparation thereof |
US7287412B2 (en) * | 2003-06-03 | 2007-10-30 | Nano-Proprietary, Inc. | Method and apparatus for sensing hydrogen gas |
JP4388263B2 (ja) * | 2002-09-11 | 2009-12-24 | 日鉱金属株式会社 | 珪化鉄スパッタリングターゲット及びその製造方法 |
JP4526758B2 (ja) * | 2002-09-11 | 2010-08-18 | 日鉱金属株式会社 | 珪化鉄粉末及びその製造方法 |
JP4203070B2 (ja) * | 2003-03-07 | 2008-12-24 | 日鉱金属株式会社 | ハフニウム合金ターゲット及びその製造方法 |
CN100376696C (zh) * | 2003-07-25 | 2008-03-26 | 日矿金属株式会社 | 高纯度铪材料、由同种材料构成的靶和薄膜以及高纯度铪的制造方法 |
US20060266158A1 (en) * | 2003-11-19 | 2006-11-30 | Nikko Materials Co., Ltd. | High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium |
KR100613098B1 (ko) * | 2004-12-29 | 2006-08-16 | 동부일렉트로닉스 주식회사 | 반도체 소자의 게이트 산화막 제조 방법 |
JP5032316B2 (ja) * | 2005-07-07 | 2012-09-26 | Jx日鉱日石金属株式会社 | 高純度ハフニウム、高純度ハフニウムからなるターゲット及び薄膜並びに高純度ハフニウムの製造方法 |
WO2010048975A1 (de) * | 2008-10-31 | 2010-05-06 | Leybold Optics Gmbh | Hafniumoxid-beschichtung |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
KR101110871B1 (ko) * | 2009-06-09 | 2012-02-15 | 주식회사 아롱엘텍 | 두피 마사지기 |
US8787066B2 (en) * | 2011-10-26 | 2014-07-22 | Intermolecular, Inc. | Method for forming resistive switching memory elements with improved switching behavior |
CN103231185B (zh) * | 2013-04-03 | 2014-12-10 | 株洲宏大高分子材料有限公司 | 一种HFSi焊销及其制备方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4619697A (en) * | 1984-08-30 | 1986-10-28 | Mitsubishi Kinzoku Kabushiki Kaisha | Sputtering target material and process for producing the same |
JPS6272122A (ja) * | 1985-09-25 | 1987-04-02 | Nec Corp | 高融点金属シリサイドの形成方法 |
JP2594794B2 (ja) * | 1987-08-06 | 1997-03-26 | 株式会社ジャパンエナジー | シリサイドターゲットとその製造方法 |
JPS6439374U (zh) | 1987-09-04 | 1989-03-09 | ||
US5354446A (en) | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
US5209835A (en) | 1988-03-03 | 1993-05-11 | Asahi Glass Company Ltd. | Method for producing a specified zirconium-silicon amorphous oxide film composition by sputtering |
US5294321A (en) | 1988-12-21 | 1994-03-15 | Kabushiki Kaisha Toshiba | Sputtering target |
EP0374931B1 (en) * | 1988-12-21 | 1994-03-02 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
KR940008936B1 (ko) | 1990-02-15 | 1994-09-28 | 가부시끼가이샤 도시바 | 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법 |
DE69117868T2 (de) | 1990-05-15 | 1996-07-25 | Toshiba Kawasaki Kk | Zerstäubungstarget und dessen herstellung |
JPH05214523A (ja) | 1992-02-05 | 1993-08-24 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
DE4214719C2 (de) * | 1992-05-04 | 1995-02-02 | Starck H C Gmbh Co Kg | Verfahren zur Herstellung feinteiliger Metall- und Keramikpulver |
JPH0616412A (ja) * | 1992-06-26 | 1994-01-25 | Mitsubishi Materials Corp | 高融点金属シリサイドの製造方法 |
JP2794382B2 (ja) * | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
JPH0874045A (ja) * | 1994-09-12 | 1996-03-19 | Mitsubishi Materials Corp | 成膜中にパーティクル発生の少ないスパッタリング用Coシリサイド焼結ターゲット材 |
JPH0820863A (ja) | 1995-06-12 | 1996-01-23 | Toshiba Corp | シリサイド膜およびその膜を使用した半導体装置 |
KR0169379B1 (ko) * | 1995-10-06 | 1999-02-01 | 김광호 | 터미날 고상용액을 형성하는 알루미늄-하프늄 합금을 이용한 게이트 전극의 제조방법 |
AT1669U1 (de) * | 1996-11-22 | 1997-09-25 | Plansee Ag | Oxidationsschutzschicht für refraktärmetalle |
JP3792007B2 (ja) * | 1997-06-12 | 2006-06-28 | 株式会社日鉱マテリアルズ | スパッタリングターゲットの製造方法 |
DE69808664T2 (de) | 1997-07-15 | 2003-07-24 | Tosoh Smd, Inc. | Feuerfeste metall-silizid-legierung sputter-targets, dessen verwendung und herstellung |
JP2000188400A (ja) | 1998-11-09 | 2000-07-04 | Texas Instr Inc <Ti> | 半導体デバイスを形成する方法 |
JP2000208508A (ja) * | 1999-01-13 | 2000-07-28 | Texas Instr Inc <Ti> | 珪酸塩高誘電率材料の真空蒸着 |
US6165413A (en) | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of making high density sputtering targets |
JP4501250B2 (ja) * | 2000-06-19 | 2010-07-14 | 日鉱金属株式会社 | 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット |
JP4596379B2 (ja) | 2001-07-09 | 2010-12-08 | Jx日鉱日石金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット |
US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
EP1528120B1 (en) | 2002-08-06 | 2011-04-13 | Nippon Mining & Metals Co., Ltd. | Hafnium silicide target and method for preparation thereof |
JP4203070B2 (ja) * | 2003-03-07 | 2008-12-24 | 日鉱金属株式会社 | ハフニウム合金ターゲット及びその製造方法 |
CN100376696C (zh) * | 2003-07-25 | 2008-03-26 | 日矿金属株式会社 | 高纯度铪材料、由同种材料构成的靶和薄膜以及高纯度铪的制造方法 |
US20060266158A1 (en) * | 2003-11-19 | 2006-11-30 | Nikko Materials Co., Ltd. | High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium |
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2002
- 2002-04-09 JP JP2002105905A patent/JP3995082B2/ja not_active Expired - Fee Related
- 2002-06-05 CN CNB028117050A patent/CN1258211C/zh not_active Expired - Fee Related
- 2002-06-05 EP EP02733313A patent/EP1408541B1/en not_active Expired - Lifetime
- 2002-06-05 WO PCT/JP2002/005547 patent/WO2003009367A1/ja active Application Filing
- 2002-06-05 US US10/480,319 patent/US7517515B2/en not_active Expired - Fee Related
- 2002-06-05 KR KR1020047000571A patent/KR100694482B1/ko active IP Right Grant
- 2002-06-11 TW TW91112590A patent/TW574390B/zh not_active IP Right Cessation
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2009
- 2009-03-03 US US12/396,716 patent/US7674446B2/en not_active Expired - Fee Related
Also Published As
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US20090194898A1 (en) | 2009-08-06 |
EP1408541A1 (en) | 2004-04-14 |
US7517515B2 (en) | 2009-04-14 |
CN1515029A (zh) | 2004-07-21 |
JP3995082B2 (ja) | 2007-10-24 |
KR100694482B1 (ko) | 2007-03-12 |
EP1408541A4 (en) | 2007-07-18 |
US7674446B2 (en) | 2010-03-09 |
CN1258211C (zh) | 2006-05-31 |
EP1408541B1 (en) | 2012-11-28 |
US20040170552A1 (en) | 2004-09-02 |
KR20040015359A (ko) | 2004-02-18 |
JP2003096560A (ja) | 2003-04-03 |
WO2003009367A1 (fr) | 2003-01-30 |
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