CN1257313A - 发光二极管 - Google Patents
发光二极管 Download PDFInfo
- Publication number
- CN1257313A CN1257313A CN99127756.2A CN99127756A CN1257313A CN 1257313 A CN1257313 A CN 1257313A CN 99127756 A CN99127756 A CN 99127756A CN 1257313 A CN1257313 A CN 1257313A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- energy gap
- luminescent
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims description 599
- 239000012535 impurity Substances 0.000 claims description 106
- 238000009792 diffusion process Methods 0.000 claims description 94
- 239000011229 interlayer Substances 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 17
- 230000006798 recombination Effects 0.000 claims description 15
- 238000005215 recombination Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 5
- 238000005253 cladding Methods 0.000 abstract 7
- 230000007547 defect Effects 0.000 description 26
- 239000013078 crystal Substances 0.000 description 24
- 239000002800 charge carrier Substances 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 230000009467 reduction Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- KQZLRWGGWXJPOS-NLFPWZOASA-N 1-[(1R)-1-(2,4-dichlorophenyl)ethyl]-6-[(4S,5R)-4-[(2S)-2-(hydroxymethyl)pyrrolidin-1-yl]-5-methylcyclohexen-1-yl]pyrazolo[3,4-b]pyrazine-3-carbonitrile Chemical compound ClC1=C(C=CC(=C1)Cl)[C@@H](C)N1N=C(C=2C1=NC(=CN=2)C1=CC[C@@H]([C@@H](C1)C)N1[C@@H](CCC1)CO)C#N KQZLRWGGWXJPOS-NLFPWZOASA-N 0.000 description 1
- 206010058490 Hyperoxia Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940125877 compound 31 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000222 hyperoxic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP338656/98 | 1998-11-30 | ||
JP338655/1998 | 1998-11-30 | ||
JP33865598 | 1998-11-30 | ||
JP33865698 | 1998-11-30 | ||
JP338655/98 | 1998-11-30 | ||
JP338656/1998 | 1998-11-30 | ||
JP33679899A JP3698402B2 (ja) | 1998-11-30 | 1999-11-26 | 発光ダイオード |
JP336798/1999 | 1999-11-26 | ||
JP336798/99 | 1999-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1257313A true CN1257313A (zh) | 2000-06-21 |
CN100355092C CN100355092C (zh) | 2007-12-12 |
Family
ID=27340800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991277562A Expired - Lifetime CN100355092C (zh) | 1998-11-30 | 1999-11-30 | 发光二极管 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6265732B1 (zh) |
JP (1) | JP3698402B2 (zh) |
KR (2) | KR100385755B1 (zh) |
CN (1) | CN100355092C (zh) |
DE (1) | DE19957312A1 (zh) |
TW (1) | TW432727B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104097A (zh) * | 2011-01-14 | 2011-06-22 | 映瑞光电科技(上海)有限公司 | 多量子阱结构、发光二极管和发光二极管封装件 |
CN105489732A (zh) * | 2015-12-08 | 2016-04-13 | 天津三安光电有限公司 | 垂直发光二极管的制作方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020145146A1 (en) * | 1999-04-27 | 2002-10-10 | Kenji Shibata | LED of AlGaInP system and epitaxial wafer used for same |
JP2001274456A (ja) * | 2000-01-18 | 2001-10-05 | Sharp Corp | 発光ダイオード |
JP2001274503A (ja) * | 2000-03-28 | 2001-10-05 | Nec Corp | 自励発振型半導体レーザ |
JP2001291895A (ja) * | 2000-04-06 | 2001-10-19 | Sharp Corp | 半導体発光素子 |
US6448582B1 (en) * | 2000-09-21 | 2002-09-10 | Yale University | High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region |
JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2002111053A (ja) * | 2000-10-02 | 2002-04-12 | Sharp Corp | 半導体発光素子 |
JP4091261B2 (ja) * | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
US6608328B2 (en) * | 2001-02-05 | 2003-08-19 | Uni Light Technology Inc. | Semiconductor light emitting diode on a misoriented substrate |
TW546855B (en) * | 2001-06-07 | 2003-08-11 | Sumitomo Chemical Co | Group 3-5 compound semiconductor and light emitting diode |
JP2004111923A (ja) | 2002-08-22 | 2004-04-08 | Osram Opto Semiconductors Gmbh | ビーム放射性半導体構成素子 |
DE10306311B4 (de) * | 2002-08-22 | 2008-08-07 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Diffusionsstoppschicht |
CN1319183C (zh) * | 2002-10-11 | 2007-05-30 | 夏普株式会社 | 半导体发光器件以及制造半导体发光器件的方法 |
JP2004153241A (ja) * | 2002-10-11 | 2004-05-27 | Sharp Corp | 半導体発光素子及びその製造方法 |
JP2007096267A (ja) * | 2005-08-30 | 2007-04-12 | Hitachi Cable Ltd | 半導体発光素子用エピタキシャルウェハ及びその製造方法並びに半導体発光素子 |
KR101073249B1 (ko) | 2005-09-06 | 2011-10-12 | 엘지이노텍 주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
KR100880635B1 (ko) * | 2006-11-30 | 2009-01-30 | 엘지전자 주식회사 | 발광 소자 |
DE102007003282B4 (de) * | 2007-01-23 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
JP2008192790A (ja) * | 2007-02-05 | 2008-08-21 | Showa Denko Kk | 発光ダイオード |
JP2010067903A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 発光素子 |
TWI389347B (zh) * | 2008-11-13 | 2013-03-11 | Epistar Corp | 光電元件及其製作方法 |
US8222657B2 (en) * | 2009-02-23 | 2012-07-17 | The Penn State Research Foundation | Light emitting apparatus |
JP6223075B2 (ja) | 2012-10-09 | 2017-11-01 | キヤノン株式会社 | 発光素子の製造方法及び発光素子 |
JP6287204B2 (ja) * | 2013-12-27 | 2018-03-07 | 日亜化学工業株式会社 | 半導体光源装置 |
US10156335B1 (en) * | 2017-08-01 | 2018-12-18 | Epistar Corporation | Light-emitting device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59208888A (ja) | 1983-05-13 | 1984-11-27 | Nec Corp | 化合物半導体発光素子 |
JP2724827B2 (ja) * | 1987-07-02 | 1998-03-09 | 国際電信電話株式会社 | 赤外発光素子 |
JPH02151085A (ja) | 1988-12-01 | 1990-06-11 | Nec Corp | 半導体発光素子 |
JP3290672B2 (ja) * | 1990-08-20 | 2002-06-10 | 株式会社東芝 | 半導体発光ダイオード |
JPH0513809A (ja) * | 1991-07-03 | 1993-01-22 | Nec Corp | 半導体発光素子 |
JP3264563B2 (ja) * | 1993-03-15 | 2002-03-11 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2773597B2 (ja) * | 1993-03-25 | 1998-07-09 | 信越半導体株式会社 | 半導体発光装置及びその製造方法 |
JPH07202260A (ja) * | 1993-12-27 | 1995-08-04 | Furukawa Electric Co Ltd:The | 歪超格子発光素子 |
JPH07288338A (ja) | 1994-04-15 | 1995-10-31 | Sanken Electric Co Ltd | 半導体発光素子 |
JP3024484B2 (ja) | 1994-07-01 | 2000-03-21 | サンケン電気株式会社 | 半導体発光素子 |
JP2795195B2 (ja) | 1994-09-28 | 1998-09-10 | 信越半導体株式会社 | 発光素子 |
JP2661576B2 (ja) * | 1994-12-08 | 1997-10-08 | 日本電気株式会社 | 半導体発光素子 |
JPH08288544A (ja) | 1995-04-14 | 1996-11-01 | Toshiba Corp | 半導体発光素子 |
US5717226A (en) * | 1996-09-18 | 1998-02-10 | Industrial Technology Research Institute | Light-emitting diodes and method of manufacturing the same |
US6107648A (en) * | 1997-03-13 | 2000-08-22 | Rohm Co., Ltd. | Semiconductor light emitting device having a structure which relieves lattice mismatch |
JPH10284756A (ja) | 1997-04-02 | 1998-10-23 | Daido Steel Co Ltd | 発光ダイオード |
JPH10303507A (ja) * | 1997-04-25 | 1998-11-13 | Sony Corp | 半導体発光素子 |
EP0886326A3 (en) | 1997-06-06 | 1999-11-24 | Hewlett-Packard Company | Separate hole injection structure for improved reliability light emitting semiconductor devices |
JPH11340505A (ja) * | 1998-05-25 | 1999-12-10 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2000058917A (ja) * | 1998-08-07 | 2000-02-25 | Pioneer Electron Corp | Iii族窒化物半導体発光素子及びその製造方法 |
US6121691A (en) * | 1999-02-26 | 2000-09-19 | Illinois Tool Works Inc. | Power reduction circuit for engine acceleration |
-
1999
- 1999-11-26 JP JP33679899A patent/JP3698402B2/ja not_active Expired - Lifetime
- 1999-11-29 DE DE19957312A patent/DE19957312A1/de not_active Withdrawn
- 1999-11-30 CN CNB991277562A patent/CN100355092C/zh not_active Expired - Lifetime
- 1999-11-30 KR KR10-1999-0053927A patent/KR100385755B1/ko active IP Right Grant
- 1999-11-30 US US09/452,057 patent/US6265732B1/en not_active Expired - Lifetime
- 1999-11-30 TW TW088120880A patent/TW432727B/zh not_active IP Right Cessation
-
2001
- 2001-05-10 US US09/853,064 patent/US6384430B1/en not_active Expired - Lifetime
-
2002
- 2002-11-25 KR KR10-2002-0073404A patent/KR100411404B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104097A (zh) * | 2011-01-14 | 2011-06-22 | 映瑞光电科技(上海)有限公司 | 多量子阱结构、发光二极管和发光二极管封装件 |
CN105489732A (zh) * | 2015-12-08 | 2016-04-13 | 天津三安光电有限公司 | 垂直发光二极管的制作方法 |
CN105489732B (zh) * | 2015-12-08 | 2017-12-22 | 天津三安光电有限公司 | 垂直发光二极管的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3698402B2 (ja) | 2005-09-21 |
CN100355092C (zh) | 2007-12-12 |
KR100385755B1 (ko) | 2003-05-28 |
DE19957312A1 (de) | 2000-07-06 |
JP2000228536A (ja) | 2000-08-15 |
US6384430B1 (en) | 2002-05-07 |
KR20030004199A (ko) | 2003-01-14 |
US6265732B1 (en) | 2001-07-24 |
KR20000035778A (ko) | 2000-06-26 |
TW432727B (en) | 2001-05-01 |
KR100411404B1 (ko) | 2003-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1257313A (zh) | 发光二极管 | |
CN1086249C (zh) | 半导体发光器件 | |
CN1236535C (zh) | 氮化物半导体元件 | |
CN1211867C (zh) | 发光元件 | |
CN1269229C (zh) | 半导体发光器件及其制造方法 | |
CN100547814C (zh) | N型ⅲ族氮化物半导体叠层结构 | |
CN1224113C (zh) | 半导体发光元件 | |
CN1106045C (zh) | 氮化物半导体发光器件 | |
CN1461061A (zh) | 白色发光元件 | |
CN1199291C (zh) | 半导体发光器件及其制造方法 | |
CN1666350A (zh) | 具有不掺杂包层和多量子阱的ⅲ族氮化物led | |
CN1641900A (zh) | 半导体发光元件 | |
CN1993835A (zh) | 氮化物半导体发光器件 | |
CN1473363A (zh) | 具有无镓层的iii族氮化物发光器件 | |
CN1498427A (zh) | 半导体发光元件 | |
CN1885572A (zh) | 一种GaN基LED外延片及其制备方法 | |
CN1909257A (zh) | 半导体发光元件 | |
CN1918717A (zh) | 基于氮化镓的化合物半导体多层结构及其制造方法 | |
CN1262022C (zh) | 发光闸流晶体管及自扫描型发光装置 | |
CN1586015A (zh) | 紫外光发射元件 | |
CN101030618A (zh) | 氮化物半导体发光装置制造方法 | |
CN1155118C (zh) | 半导体发光二极管 | |
CN1534804A (zh) | 发光二极管 | |
CN1864277A (zh) | 氮化物半导体;使用该半导体的发光器件,发光二极管,激光器件和灯;及其制造方法 | |
CN101030698A (zh) | 氮化物半导体发光装置制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN'AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CO. (JP) OSAKA, JAPAN Effective date: 20150105 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: 361009 XIAMEN, FUJIAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150105 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: sharp corporation |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20000621 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000006 Denomination of invention: Semiconductor LED and its preparing process Granted publication date: 20071212 License type: Common License Record date: 20160311 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CX01 | Expiry of patent term |
Granted publication date: 20071212 |
|
CX01 | Expiry of patent term |