CN1250984C - 改善了光学性能和电性能的功能薄膜 - Google Patents
改善了光学性能和电性能的功能薄膜 Download PDFInfo
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Abstract
提供的是一种包含一个过渡层的功能薄膜,该过渡层包含一种从铝和硅中选择的第一成分和至少一种从氧和氮中选择的第二成分,该第一成分和第二成分有随该薄膜的厚度渐变的含量梯度,渐变的含量梯度是如此分布的,以致在外部光线的入射方向上,第一成分的含量随薄膜的厚度逐渐增大,而第二成分的含量随薄膜的厚度逐渐减小。
Description
技术领域
本发明涉及一种功能薄膜,更具体地说,涉及一种有可调光学性能和电性能的功能薄膜及其制造方法。
背景技术
一种既能使外部光线的反射度减少到最低限度又有电导性的功能薄膜有多种多样的用途,包括遮阳镜、外部光线屏蔽玻璃、紫外线防护和隔绝材料或电磁屏蔽材料。
作为功能薄膜的一个例子,也可以列举在彩色显示器件例如彩色阴极射线管的无机发光材料(phosphor)层之间形成的、用于吸收外部光线和从毗邻无机发光材料层图案散射出来的光线的一种黑色基材。如果一个显示器件的屏幕的外部光线反射度提高,则可见影像就变得模糊。由于外部光线主要是在该屏幕的黑色基材上反射的,因而,通过提高该显示器件各象素周围的黑色基材的吸收度来改善亮度和反差的尝试一直在不断进行。因此,用铬制作了一种有由铬层和氧化铬层组成的层压薄膜结构的黑色基材。为了进一步提高该黑色基材的吸收性,可以向该氧化铬层中添加碳。
美国专利No.5,976,639公开了一种利用由过渡层和金属层组成的层压薄膜在显示板的内表面上形成液晶显示器黑色基材的方法。按照此专利,该层压薄膜有一个过渡层,其中,一种构成元素例如Cr、W、Ta、Ti、Fe、Ni或Mo的含量在外部光线的入射方向上每100最多增加约0.5%~约20%。该过渡层可以进一步包括一种构成元素例如氧(O)、氮(N)或碳(C)。该金属元素理想地是铬。该过渡层配置在一个低金属层与一个高金属层之间。高金属层的金属元素含量在50%~100%(重量)的范围内,而低金属层的金属元素含量在10%~50%(重量)的范围内。
然而,美国专利No.5,976,639中描述的黑色基材使用了对环境有害的材料例如铬。此外,一种可以调节其折射率和电导率的高效率功能薄膜,在该专利中也未见公开。
发明内容
为了解决上述问题,本发明的一个目的是通过使用除铬外的无毒金属与一种介电材料的混合物提供一种有优异机械性能、光学性能和电性能的功能薄膜。
为了达到上述目的,提供的是一种包括一个过渡层的功能薄膜,该过渡层包含一种从铝(Al)和硅(Si)中选择的第一成分和至少一种从氧和氮中选择的第二成分,该第一成分和第二成分有随该薄膜的厚度渐变的含量梯度。
较好的是,该渐变含量梯度是这样分布的,以致折射率在外部光线的入射方向上随薄膜的厚度逐渐增大或减少。
此外,该渐变含量梯度较好是这样分布的,以致光吸收效率在外部光线的入射方向上随薄膜的厚度逐渐增大。
该第一成分是铝,且渐变的含量梯度较好是这样分布的,以致电导率随该薄膜的厚度逐渐增大或减小。
较好的是,该渐变含量梯度是这样分布的,以致在外部光线的入射方向上,第一成分的含量随薄膜厚度逐渐减少,而第二成分的含量随薄膜厚度逐渐增大。
该薄膜较好沉积在一种基材上,该基材的折射率与该薄膜接触该基材的一面的折射率之差小于或等于0.5。
按照本发明的另一个方面,该功能薄膜可以进一步包括一个导电层,该导电层由从钛(Ti)、铝(Al)、银(Ag)、铜(Cu)、金(Au)、铂(Pt)、钴(Co)、铁(Fe)和铟锡氧化物(ITO)组成的一组中选择的至少一种金属成分组成。如以上所述,形成有该导电层的功能薄膜的第一成分是如上述的Si或Al。
该导电层的形成位置没有特别限定,但鉴于该薄膜的低电阻特征,在该功能薄膜用于需要电导率特征的领域以及第一成分是硅且Si含量随该薄膜的厚度增加的情况下,该电导层较好是在该薄膜接触该基材的那一面的反面上形成的。
按照本发明的功能薄膜可以有利地用来作为一种显示器件的黑色基材。
在按照本发明的功能薄膜包括一个导电层的情况下,它也可以有利地用来作为一种显示器件的电极。
本发明涉及一种包含一个过渡层的功能薄膜,该过渡层包含一种从铝和硅中选择的第一成分和至少一种从氧和氮中选择的第二成分,该第一成分和第二成分有随该薄膜的厚度渐变的含量梯度,渐变的含量梯度是如此分布的,以致在外部光线的入射方向上,第一成分的含量随薄膜的厚度逐渐增大,而第二成分的含量随薄膜的厚度逐渐减小。
按照本发明的功能薄膜,其中,渐变的含量梯度是如此分布的,以致折射率在外部光线的入射方向上随该薄膜的厚度逐渐增大或减小。
按照本发明的功能薄膜,其中,渐变的含量梯度是如此分布的,以致光吸收效率在外部光线的入射方向上随薄膜的厚度逐渐增大。
按照本发明的功能薄膜,其中,第一成分是铝且其渐变的含量梯度分布得使电导率随该薄膜的厚度逐渐增大或减小。
按照本发明的功能薄膜,其中,该薄膜沉积在一种基材上,该基材的折射率与该薄膜接触该基材的一面的折射率之差小于或等于0.5。
按照本发明的功能薄膜,其中,该薄膜进一步包含一个由从钛、铝、银、铜、金、铂、钴、铁和铟锡氧化物组成的一组中选择的至少一种金属成分组成的导电层。
按照本发明的功能薄膜,其中,第一成分是硅且该导电层是在该薄膜接触基材的那一面的反面上形成的。
按照本发明的功能薄膜,进一步包含一个由从钛、铝、银、铜、金、铂、钴、铁和铟锡氧化物组成的一组中选择的至少一种金属成分组成的导电层。
按照本发明的功能薄膜,其中,第一成分是硅且该导电层是在该薄膜接触该基材的那一面的反面上形成的。
附图说明
通过参照附图详细地描述其较好实施方案,本发明的上述目的和优点将变得更加显而易见,其中:
图1是一幅示意图,说明按照本发明的一种功能薄膜的结构;
图2是按照本发明的一种功能薄膜的原理说明图;
图3是按照本发明一种实施方案的一种功能薄膜的硅(Si)成分和氧(O)成分分布变化说明图;和
图4是按照本发明另一种实施方案的一种功能薄膜的铝(Al)成分和氧(O)成分分布变化说明图
具体实施方式
本发明的特征在于,一种包含一个从铝(Al)和硅(Si)中选择的第一成分和一个从氧(O)和氮(N)中选择的第二成分的层压薄膜是通过一种反应性溅射方法形成一个过渡层而得到的,其中,该第一成分和第二成分有随该薄膜的厚度变化的梯度。
如图1中所示,涂布在基材10上的薄膜20的反射度(R)是一般用式(1)代表的反射系数(r)的绝对值平方:
式中Ns和Nf分别表示基材和薄膜的复合折射率,ns和nf分别表示基材和薄膜的折射率,而ks和kf分别表示基材和薄膜的消光系数。
为了降低该薄膜的反射度,更好的是该基材与该薄膜之间的折射率差异较小。换言之,若该基材与该薄膜的折射率变得相等,则反射就不会发生。
通过逐渐改变(增加或减少)该薄膜厚度增大方向上的折射率,就能得到一种其中只有吸收发生而无反射发生的薄膜。
根据上述原理,本发明的发明者设计了图2中所示的一种功能薄膜。一种从Al和Si中选择的第一成分和一种从O和N中选择的第二成分是边控制第一成分和第二成分的沉积速度边用一种反应性溅射方法沉积在一个毗邻该基材的部分上的,从而,在一个毗邻该基材的部分上沉积了一种其折射率类似于该基材的折射率的介电材料。
在此,假设该基材的折射率和消光系数是以上说明的ns和ks,而第一种材料的折射率和消光系数是n1和k1。由于该基材与第一种材料之间的折射率差异微不足道,因而,根据式(1)所代表的原理,光线的反射几乎可以避免。
然后,通过边调节第一成分含量与第二成分含量之比边执行该反应性溅射方法,在第一种材料上沉积一种实质上具有与第一种材料相同折射率的第二种材料(折射率:n2;消光系数:k2),因而,根据与如上所述相同的原理,降低了光线的反射率。根据与如上所述相同的原理,可以连续地沉积一种折射率为n3且消光系数为k3的第三种材料、一种折射率为n4且消光系数为k4的第四种材料、一种折射率为n5且消光系数为k5的第五种材料等等。
可以创造折射率梯度,使得该折射率逐渐增大或减少。为了降低外部光线的反射度和提高光线吸收效率,沉积较好以消光系数能在外部光线的入射方向上增大这样一种方式执行。通过让该消光系数随薄膜的厚度逐渐增大,就能使通过该薄膜的光线数量逐渐减少,直至当厚度达到预定水平时没有光线透射。
此外,通过使用Al作为第一成分和通过使Al含量随该薄膜的厚度增加,也使该薄膜的折射率和电导率均能随其厚度逐渐增大,从而使外部光线的反射度最小化并实现一种有高电导率的光学结构。这样一种结构,当作为一种显示器件的一种电磁屏蔽材料或黑色基材应用时,能有效地防止电荷积累。
如果用Si作为第一成分且Si含量随该薄膜的厚度增大,则较好在供上述使用目的的薄膜上进一步形成一个导电层。在此,该导电层由从钛(Ti)、铝(Al)、银(Ag)、铜(Cu)、金(Au)、铂(Pt)、钴(Co)、铁(Fe)和铟锡氧化物(ITO)组成的一组中选择的至少一种金属成分组成。
按照本发明,该薄膜是沉积在一种基材上的,该基材的折射率与该薄膜接触该基材的一面的折射率之差小于或等于0.5。如果大于0.5,则与该基材尤其玻璃基材相比,该薄膜的反射度就会不理想地增大。
在按照本发明的功能薄膜中,较好用Si或Al作为第一成分,因为其氧化物的性能类似于用来作为基材材料的玻璃的性能。
此外,在按照本发明的功能薄膜中,较好用氧或氮作为与该第一成分反应的第二成分,并进行溅射。换言之,较好使用Si氧化物、Al氧化物、Si氮化物或Al氮化物。沉积是以形成该氧化物或氮化物的各成分的组成比的逐渐改变来执行的。
按照本发明的功能薄膜是用一种反应性溅射方法以如下方式制造的。
反应性溅射可以用一台装置执行,该装置包含一个配备抽吸系统的真空室、一个配置于该真空室内的磁控管阴极、一个配置于该磁控管阴极上的靶例如Si或Al、一个导入磁控管放电用气体的第一气体入口系统、一个导入一种能与所溅射金属元素反应的反应性气体例如氧气或氮气的第二气体入口系统、一种用来转移基材从而使之能处于向上面对放电空间的位置的载体。
第一气体入口系统和第二气体入口系统的喷嘴是经由该放电空间彼此相对的。此外,第一气体入口系统和第二气体入口系统的喷嘴分别置于该基材的转移线的上游和下游。
在上述配置中,该反应性气体在该放电空间中的分压在该基材的转移方向上逐渐降低。
在使用氧和氮两者作为反应性气体的情况下,一种反应性气体的分压逐渐降低而另一种气体的分压逐渐增大。
按照本发明的一种实施方案,提供的是一种包含Si氧化物(SiOx)或硅氮化物(SiNx)的功能薄膜。在把Si氧化物沉积在一种碱石灰玻璃基材上的情况下,用Si作为靶而用氧(O2)作为一种第二气体即反应性气体。该第二气体的分压是如此调节的,以致其折射率类似于该碱石灰玻璃基材的折射率的SiO2在沉积初始阶段就沉积在该基材上,O2的分压随着沉积的进展逐渐降低,且在沉积的最终阶段只有Si沉积。图3示意性地显示组成随薄膜厚度增加的变化。
按照本发明的另一个方面,通过沉积一个Si层然后使用从Ti、Al、Ag、Cu、Au、Pt、Co、Fe和ITO或其合金组成的一组中选择的至少一种金属靶作为该溅射装置的靶沉积一个金属层,提供一种有导电性的功能薄膜。有一个金属导电层的功能薄膜可以应用于一种等离子体显示板(PDP)的电极、各种各样显示器件的黑色基材、等等。
替而代之,本发明提供一种有Al氧化物或氮化物的功能薄膜。在沉积一种Al氧化物的情况下,用Al作为靶而用氧(O2)或氮(N2)作为第二气体即一种反应性气体。随后的沉积过程与Si的情况相同。
在使用Al作为靶的情况下,在初始阶段得到一个Al氧化物或氮化物层,且最终得到一个Al层。由于Al本身是一种金属,因而它可以直接用于需要导电薄膜的各种各样用途,而无需另外形成一个金属导电层。图4示意性地显示在沉积Al氧化物的情况下组成随薄膜厚度变化而变化。在碱石灰基材的情况下,铝与氧的含量比较好是2∶3,以使该基材与初始阶段薄膜的折射率几乎相同。
图3和图4说明靶的组成呈线性变化的情况,但本发明不限于此,沉积可以进行得使之具有阶式梯度。如果加给每个靶的射频(RF)或直流(DC)电源功率线性地增大或减少,则会产生如图3和图4所示的一种线性含量梯度。替代地,通过对某一靶逐渐施加预定的RF或DC电源功率,可以得到一种有阶式梯度的功能薄膜。
现在,将通过下列实施例详细地描述本发明,但本发明不限于此。
实施例1
作为靶的硅(Si)和作为一种反应性气体的氧(O2)用一台反应性溅射装置沉积在一种碱石灰玻璃基材上,同时逐渐降低氧的分压,使得Si和O2有随薄膜厚度变化的含量梯度。
调整硅与氧的原子比,使之在沉积初始阶段为1∶2,并逐渐降低O2的分压,直至当该薄膜厚度达到1500时只沉积Si。
当该薄膜的总厚度为2000时,用一种银(Ag)靶进一步形成一个1000厚的导电层。
实施例2
按与实施例1中相同的方式制造一种功能薄膜,所不同的是用氧和氮两者作为反应性气体来形成薄膜。
实施例3
按与实施例1中相同的方式制造一种功能薄膜,所不同的是,用Al靶代替Si靶,而且不执行一个形成导电层的单独步骤。此外,也调整铝与氧的原子比,使之在沉积初始阶段为大约2∶3。
对实施例1~3中制造的黑色基材的电性能和光学性能进行评估。评估结果综合在表1中。
在表1中,反射度和光密度是用一台紫外一可见光谱仪在550nm波长测定的,表面电阻Rs是用一种四点探针方法测定的。
表1
构成元素 | Rs(mΩ/□) | 反射度(550nm,%) | 光密度 | 厚度() | |
实施例1 | Si/O/Ag | 240 | 0.05 | 4.5 | 3000 |
实施例2 | Si/N/O/Ag | 210 | 0.2 | 4.2 | 3300 |
实施例3 | Al/O | 352 | 0.5 | 4.6 | 3500 |
从表1可知,按照实施例1~3的功能薄膜有良好的反射度、表面电阻和光密度,即,该功能薄膜显示出表面电阻为200~350mΩ/□、反射度为0.5或以下、光密度为4.0或以上。
在按照本发明的功能薄膜中,为了大大降低该薄膜的反射度,可以容易地调节该薄膜的折射率,使之实质上与基材的折射率相同。此外,在逐渐改变该薄膜的折射率的同时,最终能提供具有所希望电性能的薄膜,因而,该薄膜兼备一个光吸收层和一个导电层。因此,按照本发明的功能薄膜可以用于同时需要光学性能和电性能的各种各样用途。
虽然本发明已经参照其较好实施方案具体地显示和描述,但业内人士要理解的是,可以对其中的形式和细节做各种改变而不会背离所附权利要求书所界定的本发明的精神和范围。
Claims (9)
1.一种包含一个过渡层的功能薄膜,该过渡层包含一种从铝和硅中选择的第一成分和至少一种从氧和氮中选择的第二成分,该第一成分和第二成分有随该薄膜的厚度渐变的含量梯度,渐变的含量梯度是如此分布的,以致在外部光线的入射方向上,第一成分的含量随薄膜的厚度逐渐增大,而第二成分的含量随薄膜的厚度逐渐减小。
2.按照权利要求1的功能薄膜,其中,渐变的含量梯度是如此分布的,以致折射率在外部光线的入射方向上随该薄膜的厚度逐渐增大或减小。
3.按照权利要求1的功能薄膜,其中,渐变的含量梯度是如此分布的,以致光吸收效率在外部光线的入射方向上随薄膜的厚度逐渐增大。
4.按照权利要求1的功能薄膜,其中,第一成分是铝且其渐变的含量梯度分布得使电导率随该薄膜的厚度逐渐增大或减小。
5.按照权利要求1的功能薄膜,其中,该薄膜沉积在一种基材上,该基材的折射率与该薄膜接触该基材的一面的折射率之差小于或等于0.5。
6.按照权利要求1的功能薄膜,其中,该薄膜进一步包含一个由从钛、铝、银、铜、金、铂、钴、铁和铟锡氧化物组成的一组中选择的至少一种金属成分组成的导电层。
7.按照权利要求6的功能薄膜,其中,第一成分是硅。
8.按照权利要求5的功能薄膜,进一步包含一个由从钛、铝、银、铜、金、铂、钴、铁和铟锡氧化物组成的一组中选择的至少一种金属成分组成的导电层。
9.按照权利要求8的功能薄膜,其中,第一成分是硅且该导电层是在该薄膜接触该基材的那一面的反面上形成的。
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JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
US6015323A (en) * | 1997-01-03 | 2000-01-18 | Micron Technology, Inc. | Field emission display cathode assembly government rights |
US6495251B1 (en) * | 1997-06-20 | 2002-12-17 | Ppg Industries Ohio, Inc. | Silicon oxynitride protective coatings |
JPH1131650A (ja) * | 1997-07-14 | 1999-02-02 | Kokusai Electric Co Ltd | 反射防止膜、被処理基板、被処理基板の製造方法、微細パターンの製造方法、および半導体装置の製造方法 |
JP2001192821A (ja) * | 2000-01-07 | 2001-07-17 | Nippon Sheet Glass Co Ltd | 被膜を基体に被覆する方法およびその方法を用いた物品 |
-
2001
- 2001-02-07 KR KR1020010005938A patent/KR100708640B1/ko not_active IP Right Cessation
- 2001-10-24 DE DE10152411A patent/DE10152411A1/de not_active Withdrawn
- 2001-10-31 GB GB0126124A patent/GB2372042B/en not_active Expired - Lifetime
- 2001-11-05 CN CNB011379103A patent/CN1250984C/zh not_active Expired - Fee Related
- 2001-11-28 US US09/994,786 patent/US6623862B2/en not_active Expired - Fee Related
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2002
- 2002-02-05 JP JP2002027532A patent/JP2002323605A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20020065759A (ko) | 2002-08-14 |
KR100708640B1 (ko) | 2007-04-18 |
GB0126124D0 (en) | 2002-01-02 |
JP2002323605A (ja) | 2002-11-08 |
GB2372042B (en) | 2005-01-26 |
US20020187354A1 (en) | 2002-12-12 |
CN1368649A (zh) | 2002-09-11 |
DE10152411A1 (de) | 2002-08-08 |
US6623862B2 (en) | 2003-09-23 |
GB2372042A (en) | 2002-08-14 |
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