CN1243602A - 制备薄硅膜的方法 - Google Patents

制备薄硅膜的方法 Download PDF

Info

Publication number
CN1243602A
CN1243602A CN98801852A CN98801852A CN1243602A CN 1243602 A CN1243602 A CN 1243602A CN 98801852 A CN98801852 A CN 98801852A CN 98801852 A CN98801852 A CN 98801852A CN 1243602 A CN1243602 A CN 1243602A
Authority
CN
China
Prior art keywords
substrate
single crystal
crystal film
etchant
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98801852A
Other languages
English (en)
Chinese (zh)
Inventor
K·J·韦伯
A·W·布拉科斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Energy Retail Ltd
Original Assignee
Boral Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boral Energy Ltd filed Critical Boral Energy Ltd
Publication of CN1243602A publication Critical patent/CN1243602A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN98801852A 1997-01-21 1998-01-21 制备薄硅膜的方法 Pending CN1243602A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPO4686 1997-01-21
AUPO4686A AUPO468697A0 (en) 1997-01-21 1997-01-21 A method of producing thin silicon epitaxial films

Publications (1)

Publication Number Publication Date
CN1243602A true CN1243602A (zh) 2000-02-02

Family

ID=3798990

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98801852A Pending CN1243602A (zh) 1997-01-21 1998-01-21 制备薄硅膜的方法

Country Status (7)

Country Link
EP (1) EP0970514A4 (ja)
JP (1) JP2001508947A (ja)
KR (1) KR20000070285A (ja)
CN (1) CN1243602A (ja)
AU (2) AUPO468697A0 (ja)
CA (1) CA2278174A1 (ja)
WO (1) WO1998032164A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102122679A (zh) * 2009-04-15 2011-07-13 朱慧珑 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法
CN102484168A (zh) * 2009-08-25 2012-05-30 荷兰能源研究中心基金会 太阳电池及制造太阳电池的方法
CN101946335B (zh) * 2008-02-21 2012-11-21 夏普株式会社 太阳能电池及太阳能电池的制造方法
CN106847999A (zh) * 2017-02-28 2017-06-13 南通壹选工业设计有限公司 一种太阳能发电组件的制造方法
CN110311014A (zh) * 2019-07-08 2019-10-08 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
CN110676205A (zh) * 2019-09-17 2020-01-10 中国电子科技集团公司第十一研究所 芯片的衬底的多次使用方法及红外探测器

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPR174800A0 (en) 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
KR20040068928A (ko) 2001-11-29 2004-08-02 오리진 에너지 솔라 피티와이 리미티드 반도체 가공 방법
AU2002342438C1 (en) * 2001-11-29 2009-09-17 The Australian National University Semiconductor texturing process
JP4301950B2 (ja) 2001-12-04 2009-07-22 オリジン エナジー ソーラー ピーティーワイ リミテッド 太陽電池用の薄いシリコンシートを製造する方法
AU2002349175B2 (en) * 2001-12-04 2008-11-06 The Australian National University Method of making thin silicon sheets for solar cells
JPWO2005069356A1 (ja) * 2004-01-15 2008-04-24 独立行政法人科学技術振興機構 単結晶薄膜の製造方法及びその単結晶薄膜デバイス
US7910822B1 (en) 2005-10-17 2011-03-22 Solaria Corporation Fabrication process for photovoltaic cell
US8227688B1 (en) 2005-10-17 2012-07-24 Solaria Corporation Method and resulting structure for assembling photovoltaic regions onto lead frame members for integration on concentrating elements for solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US7910392B2 (en) 2007-04-02 2011-03-22 Solaria Corporation Method and system for assembling a solar cell package
US8049098B2 (en) 2007-09-05 2011-11-01 Solaria Corporation Notch structure for concentrating module and method of manufacture using photovoltaic strips
US7910035B2 (en) 2007-12-12 2011-03-22 Solaria Corporation Method and system for manufacturing integrated molded concentrator photovoltaic device
KR101025301B1 (ko) * 2009-02-19 2011-03-29 한국세라믹기술원 박막 실리콘 태양전지의 제조방법
USD699176S1 (en) 2011-06-02 2014-02-11 Solaria Corporation Fastener for solar modules

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
DE3177084D1 (en) * 1980-04-10 1989-09-21 Massachusetts Inst Technology Method of producing sheets of crystalline material
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US5073230A (en) * 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5286335A (en) * 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5344517A (en) * 1993-04-22 1994-09-06 Bandgap Technology Corporation Method for lift-off of epitaxial layers and applications thereof
US5662768A (en) * 1995-09-21 1997-09-02 Lsi Logic Corporation High surface area trenches for an integrated ciruit device
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101946335B (zh) * 2008-02-21 2012-11-21 夏普株式会社 太阳能电池及太阳能电池的制造方法
CN102122679A (zh) * 2009-04-15 2011-07-13 朱慧珑 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法
CN102122679B (zh) * 2009-04-15 2014-08-06 聚日（苏州）科技有限公司 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法
CN102484168A (zh) * 2009-08-25 2012-05-30 荷兰能源研究中心基金会 太阳电池及制造太阳电池的方法
CN102484168B (zh) * 2009-08-25 2015-04-15 荷兰能源研究中心基金会 太阳电池及制造太阳电池的方法
CN106847999A (zh) * 2017-02-28 2017-06-13 南通壹选工业设计有限公司 一种太阳能发电组件的制造方法
CN106847999B (zh) * 2017-02-28 2018-08-03 南通壹选工业设计有限公司 一种太阳能发电组件的制造方法
CN110311014A (zh) * 2019-07-08 2019-10-08 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
CN110311014B (zh) * 2019-07-08 2020-11-24 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
CN110676205A (zh) * 2019-09-17 2020-01-10 中国电子科技集团公司第十一研究所 芯片的衬底的多次使用方法及红外探测器
CN110676205B (zh) * 2019-09-17 2023-01-06 中国电子科技集团公司第十一研究所 芯片的衬底的多次使用方法及红外探测器

Also Published As

Publication number Publication date
JP2001508947A (ja) 2001-07-03
AU743826B2 (en) 2002-02-07
WO1998032164A1 (en) 1998-07-23
CA2278174A1 (en) 1998-07-23
AUPO468697A0 (en) 1997-02-13
AU5544098A (en) 1998-08-07
KR20000070285A (ko) 2000-11-25
EP0970514A1 (en) 2000-01-12
EP0970514A4 (en) 2000-11-02

Similar Documents

Publication Publication Date Title
CN1243602A (zh) 制备薄硅膜的方法
McCann et al. A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates
CN1122317C (zh) 用于生产半导体衬底的方法
DE4019209C2 (ja)
US6664169B1 (en) Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
DE69738307T2 (de) Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle
JP3360919B2 (ja) 薄膜太陽電池の製造方法，及び薄膜太陽電池
KR101699253B1 (ko) 웨이퍼 기초 솔라 패널의 제조 방법
US20130065350A1 (en) Thin Interdigitated Backside Contact Solar Cell and Manufacturing Process Thereof
US20150171240A1 (en) Fabrication methods for monolithically isled back contact back junction solar cells
US5702538A (en) Silicon semiconductor wafer solar cell and process for producing said wafer
CA1064601A (en) Manufacture of semiconductor ribbon
JPH11214720A (ja) 薄膜結晶太陽電池の製造方法
AU751353B2 (en) Crystal growth process, semiconductor device, and its production process
US4152536A (en) Solar cells
CN108963006A (zh) 一种太阳能电池及其制备方法和基于其的电池片及光伏组件
CA1083253A (en) Manufacture of semiconductor ribbon and solar cells
JPH0575148A (ja) 太陽電池の製造方法
EP2195475B1 (en) Wafer/ribbon crystal and method for its manufacture
JP3602323B2 (ja) 太陽電池の製造方法
JP3542521B2 (ja) 半導体基体及び太陽電池の製造方法と陽極化成装置
US8969183B2 (en) Method for producing thin layers of crystalline or polycrystalline materials
JP2004140087A (ja) 太陽電池用多結晶シリコン基板とその製造法、及びこの基板を用いた太陽電池の製造法
Weber et al. Silicon as a photovoltaic material
WO1992010003A1 (en) Method for manufacturing thin silicon solar cell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Applicant after: Orizin energy retail Ltd

Applicant before: Boral Energy-Source Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: BORAL ENERGY-SOURCE CO., LTD. TO: AORUIJIN ENERGY RETAIL CO., LTD.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication