AUPO468697A0 - A method of producing thin silicon epitaxial films - Google Patents

A method of producing thin silicon epitaxial films

Info

Publication number
AUPO468697A0
AUPO468697A0 AUPO4686A AUPO468697A AUPO468697A0 AU PO468697 A0 AUPO468697 A0 AU PO468697A0 AU PO4686 A AUPO4686 A AU PO4686A AU PO468697 A AUPO468697 A AU PO468697A AU PO468697 A0 AUPO468697 A0 AU PO468697A0
Authority
AU
Australia
Prior art keywords
thin silicon
silicon epitaxial
producing thin
epitaxial films
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPO4686A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Australian National University
Original Assignee
Australian National University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Australian National University filed Critical Australian National University
Priority to AUPO4686A priority Critical patent/AUPO468697A0/en
Publication of AUPO468697A0 publication Critical patent/AUPO468697A0/en
Priority to EP98900480A priority patent/EP0970514A4/en
Priority to CN98801852A priority patent/CN1243602A/zh
Priority to PCT/AU1998/000027 priority patent/WO1998032164A1/en
Priority to AU55440/98A priority patent/AU743826B2/en
Priority to KR1019997006513A priority patent/KR20000070285A/ko
Priority to CA 2278174 priority patent/CA2278174A1/en
Priority to JP53341198A priority patent/JP2001508947A/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
AUPO4686A 1997-01-21 1997-01-21 A method of producing thin silicon epitaxial films Abandoned AUPO468697A0 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
AUPO4686A AUPO468697A0 (en) 1997-01-21 1997-01-21 A method of producing thin silicon epitaxial films
EP98900480A EP0970514A4 (en) 1997-01-21 1998-01-21 PROCESS FOR PRODUCING SILICON FILM FILMS
CN98801852A CN1243602A (zh) 1997-01-21 1998-01-21 制备薄硅膜的方法
PCT/AU1998/000027 WO1998032164A1 (en) 1997-01-21 1998-01-21 A method of producing thin silicon films
AU55440/98A AU743826B2 (en) 1997-01-21 1998-01-21 A method of producing thin silicon films
KR1019997006513A KR20000070285A (ko) 1997-01-21 1998-01-21 실리콘 박막 제조 방법
CA 2278174 CA2278174A1 (en) 1997-01-21 1998-01-21 A method of producing thin silicon films
JP53341198A JP2001508947A (ja) 1997-01-21 1998-01-21 シリコン薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPO4686A AUPO468697A0 (en) 1997-01-21 1997-01-21 A method of producing thin silicon epitaxial films

Publications (1)

Publication Number Publication Date
AUPO468697A0 true AUPO468697A0 (en) 1997-02-13

Family

ID=3798990

Family Applications (2)

Application Number Title Priority Date Filing Date
AUPO4686A Abandoned AUPO468697A0 (en) 1997-01-21 1997-01-21 A method of producing thin silicon epitaxial films
AU55440/98A Ceased AU743826B2 (en) 1997-01-21 1998-01-21 A method of producing thin silicon films

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU55440/98A Ceased AU743826B2 (en) 1997-01-21 1998-01-21 A method of producing thin silicon films

Country Status (7)

Country Link
EP (1) EP0970514A4 (ja)
JP (1) JP2001508947A (ja)
KR (1) KR20000070285A (ja)
CN (1) CN1243602A (ja)
AU (2) AUPO468697A0 (ja)
CA (1) CA2278174A1 (ja)
WO (1) WO1998032164A1 (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPR174800A0 (en) 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
KR20040068928A (ko) 2001-11-29 2004-08-02 오리진 에너지 솔라 피티와이 리미티드 반도체 가공 방법
AU2002342438C1 (en) * 2001-11-29 2009-09-17 The Australian National University Semiconductor texturing process
JP4301950B2 (ja) 2001-12-04 2009-07-22 オリジン エナジー ソーラー ピーティーワイ リミテッド 太陽電池用の薄いシリコンシートを製造する方法
AU2002349175B2 (en) * 2001-12-04 2008-11-06 The Australian National University Method of making thin silicon sheets for solar cells
JPWO2005069356A1 (ja) * 2004-01-15 2008-04-24 独立行政法人科学技術振興機構 単結晶薄膜の製造方法及びその単結晶薄膜デバイス
US7910822B1 (en) 2005-10-17 2011-03-22 Solaria Corporation Fabrication process for photovoltaic cell
US8227688B1 (en) 2005-10-17 2012-07-24 Solaria Corporation Method and resulting structure for assembling photovoltaic regions onto lead frame members for integration on concentrating elements for solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US7910392B2 (en) 2007-04-02 2011-03-22 Solaria Corporation Method and system for assembling a solar cell package
US8049098B2 (en) 2007-09-05 2011-11-01 Solaria Corporation Notch structure for concentrating module and method of manufacture using photovoltaic strips
US7910035B2 (en) 2007-12-12 2011-03-22 Solaria Corporation Method and system for manufacturing integrated molded concentrator photovoltaic device
JP5203397B2 (ja) * 2008-02-21 2013-06-05 シャープ株式会社 太陽電池の製造方法
KR101025301B1 (ko) * 2009-02-19 2011-03-29 한국세라믹기술원 박막 실리콘 태양전지의 제조방법
CN101976657B (zh) * 2009-04-15 2013-10-30 朱慧珑 用于半导体器件制造的基板结构及其制造方法
NL2003390C2 (en) * 2009-08-25 2011-02-28 Stichting Energie Solar cell and method for manufacturing such a solar cell.
USD699176S1 (en) 2011-06-02 2014-02-11 Solaria Corporation Fastener for solar modules
CN106847999B (zh) * 2017-02-28 2018-08-03 南通壹选工业设计有限公司 一种太阳能发电组件的制造方法
CN110311014B (zh) * 2019-07-08 2020-11-24 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
CN110676205B (zh) * 2019-09-17 2023-01-06 中国电子科技集团公司第十一研究所 芯片的衬底的多次使用方法及红外探测器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
DE3177084D1 (en) * 1980-04-10 1989-09-21 Massachusetts Inst Technology Method of producing sheets of crystalline material
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US5073230A (en) * 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5286335A (en) * 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5344517A (en) * 1993-04-22 1994-09-06 Bandgap Technology Corporation Method for lift-off of epitaxial layers and applications thereof
US5662768A (en) * 1995-09-21 1997-09-02 Lsi Logic Corporation High surface area trenches for an integrated ciruit device
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method

Also Published As

Publication number Publication date
JP2001508947A (ja) 2001-07-03
AU743826B2 (en) 2002-02-07
WO1998032164A1 (en) 1998-07-23
CA2278174A1 (en) 1998-07-23
AU5544098A (en) 1998-08-07
CN1243602A (zh) 2000-02-02
KR20000070285A (ko) 2000-11-25
EP0970514A1 (en) 2000-01-12
EP0970514A4 (en) 2000-11-02

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