CA2278174A1 - A method of producing thin silicon films - Google Patents
A method of producing thin silicon films Download PDFInfo
- Publication number
- CA2278174A1 CA2278174A1 CA 2278174 CA2278174A CA2278174A1 CA 2278174 A1 CA2278174 A1 CA 2278174A1 CA 2278174 CA2278174 CA 2278174 CA 2278174 A CA2278174 A CA 2278174A CA 2278174 A1 CA2278174 A1 CA 2278174A1
- Authority
- CA
- Canada
- Prior art keywords
- film
- substrate
- layer
- etchant
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 140
- 229910052710 silicon Inorganic materials 0.000 title claims description 140
- 239000010703 silicon Substances 0.000 title claims description 140
- 239000000758 substrate Substances 0.000 claims abstract description 250
- 238000005530 etching Methods 0.000 claims abstract description 54
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 230000015556 catabolic process Effects 0.000 claims abstract description 5
- 238000006731 degradation reaction Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 168
- 239000000872 buffer Substances 0.000 claims description 89
- 230000000873 masking effect Effects 0.000 claims description 88
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims description 26
- 239000011574 phosphorus Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 208000012868 Overgrowth Diseases 0.000 claims description 3
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical group NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUP04686 | 1997-01-21 | ||
| AUPO4686A AUPO468697A0 (en) | 1997-01-21 | 1997-01-21 | A method of producing thin silicon epitaxial films |
| PCT/AU1998/000027 WO1998032164A1 (en) | 1997-01-21 | 1998-01-21 | A method of producing thin silicon films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2278174A1 true CA2278174A1 (en) | 1998-07-23 |
Family
ID=3798990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2278174 Abandoned CA2278174A1 (en) | 1997-01-21 | 1998-01-21 | A method of producing thin silicon films |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0970514A4 (ja) |
| JP (1) | JP2001508947A (ja) |
| KR (1) | KR20000070285A (ja) |
| CN (1) | CN1243602A (ja) |
| AU (2) | AUPO468697A0 (ja) |
| CA (1) | CA2278174A1 (ja) |
| WO (1) | WO1998032164A1 (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
| KR20040068928A (ko) | 2001-11-29 | 2004-08-02 | 오리진 에너지 솔라 피티와이 리미티드 | 반도체 가공 방법 |
| AU2002342438C1 (en) * | 2001-11-29 | 2009-09-17 | The Australian National University | Semiconductor texturing process |
| JP4301950B2 (ja) | 2001-12-04 | 2009-07-22 | オリジン エナジー ソーラー ピーティーワイ リミテッド | 太陽電池用の薄いシリコンシートを製造する方法 |
| AU2002349175B2 (en) * | 2001-12-04 | 2008-11-06 | The Australian National University | Method of making thin silicon sheets for solar cells |
| JPWO2005069356A1 (ja) * | 2004-01-15 | 2008-04-24 | 独立行政法人科学技術振興機構 | 単結晶薄膜の製造方法及びその単結晶薄膜デバイス |
| US7910822B1 (en) | 2005-10-17 | 2011-03-22 | Solaria Corporation | Fabrication process for photovoltaic cell |
| US8227688B1 (en) | 2005-10-17 | 2012-07-24 | Solaria Corporation | Method and resulting structure for assembling photovoltaic regions onto lead frame members for integration on concentrating elements for solar cells |
| US8035028B2 (en) * | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
| US7910392B2 (en) | 2007-04-02 | 2011-03-22 | Solaria Corporation | Method and system for assembling a solar cell package |
| US8049098B2 (en) | 2007-09-05 | 2011-11-01 | Solaria Corporation | Notch structure for concentrating module and method of manufacture using photovoltaic strips |
| US7910035B2 (en) | 2007-12-12 | 2011-03-22 | Solaria Corporation | Method and system for manufacturing integrated molded concentrator photovoltaic device |
| JP5203397B2 (ja) * | 2008-02-21 | 2013-06-05 | シャープ株式会社 | 太陽電池の製造方法 |
| KR101025301B1 (ko) * | 2009-02-19 | 2011-03-29 | 한국세라믹기술원 | 박막 실리콘 태양전지의 제조방법 |
| CN101976657B (zh) * | 2009-04-15 | 2013-10-30 | 朱慧珑 | 用于半导体器件制造的基板结构及其制造方法 |
| NL2003390C2 (en) * | 2009-08-25 | 2011-02-28 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
| USD699176S1 (en) | 2011-06-02 | 2014-02-11 | Solaria Corporation | Fastener for solar modules |
| CN106847999B (zh) * | 2017-02-28 | 2018-08-03 | 南通壹选工业设计有限公司 | 一种太阳能发电组件的制造方法 |
| CN110311014B (zh) * | 2019-07-08 | 2020-11-24 | 绵阳金能移动能源有限公司 | 一种降低柔性铜铟镓硒太阳电池串联电阻的方法 |
| CN110676205B (zh) * | 2019-09-17 | 2023-01-06 | 中国电子科技集团公司第十一研究所 | 芯片的衬底的多次使用方法及红外探测器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328549A (en) * | 1980-04-10 | 1994-07-12 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| DE3177084D1 (en) * | 1980-04-10 | 1989-09-21 | Massachusetts Inst Technology | Method of producing sheets of crystalline material |
| US4705659A (en) * | 1985-04-01 | 1987-11-10 | Motorola, Inc. | Carbon film oxidation for free-standing film formation |
| US4883561A (en) * | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
| US5073230A (en) * | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
| US5362671A (en) * | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
| US5286335A (en) * | 1992-04-08 | 1994-02-15 | Georgia Tech Research Corporation | Processes for lift-off and deposition of thin film materials |
| US5344517A (en) * | 1993-04-22 | 1994-09-06 | Bandgap Technology Corporation | Method for lift-off of epitaxial layers and applications thereof |
| US5662768A (en) * | 1995-09-21 | 1997-09-02 | Lsi Logic Corporation | High surface area trenches for an integrated ciruit device |
| US5710057A (en) * | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
-
1997
- 1997-01-21 AU AUPO4686A patent/AUPO468697A0/en not_active Abandoned
-
1998
- 1998-01-21 CA CA 2278174 patent/CA2278174A1/en not_active Abandoned
- 1998-01-21 AU AU55440/98A patent/AU743826B2/en not_active Ceased
- 1998-01-21 CN CN98801852A patent/CN1243602A/zh active Pending
- 1998-01-21 WO PCT/AU1998/000027 patent/WO1998032164A1/en not_active Application Discontinuation
- 1998-01-21 EP EP98900480A patent/EP0970514A4/en not_active Withdrawn
- 1998-01-21 KR KR1019997006513A patent/KR20000070285A/ko not_active Application Discontinuation
- 1998-01-21 JP JP53341198A patent/JP2001508947A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001508947A (ja) | 2001-07-03 |
| AU743826B2 (en) | 2002-02-07 |
| WO1998032164A1 (en) | 1998-07-23 |
| AUPO468697A0 (en) | 1997-02-13 |
| AU5544098A (en) | 1998-08-07 |
| CN1243602A (zh) | 2000-02-02 |
| KR20000070285A (ko) | 2000-11-25 |
| EP0970514A1 (en) | 2000-01-12 |
| EP0970514A4 (en) | 2000-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |