CN102122679A - 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法 - Google Patents
薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法 Download PDFInfo
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- CN102122679A CN102122679A CN2010101501004A CN201010150100A CN102122679A CN 102122679 A CN102122679 A CN 102122679A CN 2010101501004 A CN2010101501004 A CN 2010101501004A CN 201010150100 A CN201010150100 A CN 201010150100A CN 102122679 A CN102122679 A CN 102122679A
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 196
- 239000000758 substrate Substances 0.000 claims abstract description 130
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 71
- 239000010408 film Substances 0.000 claims description 67
- 230000004888 barrier function Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 67
- 238000000137 annealing Methods 0.000 claims 2
- 238000003491 array Methods 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 238000005215 recombination Methods 0.000 abstract description 9
- 230000006798 recombination Effects 0.000 abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (67)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21267309P | 2009-04-15 | 2009-04-15 | |
US61/212,673 | 2009-04-15 |
Publications (2)
Publication Number | Publication Date |
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CN102122679A true CN102122679A (zh) | 2011-07-13 |
CN102122679B CN102122679B (zh) | 2014-08-06 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN2010101501023A Expired - Fee Related CN101976657B (zh) | 2009-04-15 | 2010-04-14 | 用于半导体器件制造的基板结构及其制造方法 |
CN201010150100.4A Expired - Fee Related CN102122679B (zh) | 2009-04-15 | 2010-04-14 | 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法 |
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CN2010101501023A Expired - Fee Related CN101976657B (zh) | 2009-04-15 | 2010-04-14 | 用于半导体器件制造的基板结构及其制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593232A (zh) * | 2012-03-19 | 2012-07-18 | 厦门大学 | 一种横向结构的pn太阳能电池及其制备方法 |
CN103378211A (zh) * | 2012-04-19 | 2013-10-30 | 聚日(苏州)科技有限公司 | 太阳能电池单元及其制造方法 |
CN103579407A (zh) * | 2012-07-26 | 2014-02-12 | 聚日(苏州)科技有限公司 | 一种太阳能电池及其制造方法 |
CN110277463A (zh) * | 2019-07-10 | 2019-09-24 | 中威新能源(成都)有限公司 | 一种太阳能电池结构制作方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101687A (en) * | 1978-01-27 | 1979-08-10 | Sharp Corp | Solar battery unit |
CN85103355A (zh) * | 1984-12-10 | 1986-11-12 | 三洋电机株式会社 | 光电池 |
JPH1190923A (ja) * | 1997-09-19 | 1999-04-06 | Hitachi Cable Ltd | マルチワイヤソーによる切断方法 |
CN1241038A (zh) * | 1998-06-12 | 2000-01-12 | 佳能株式会社 | 太阳能电池组件、电池组件列、电池系统及其监控方法 |
CN1243602A (zh) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | 制备薄硅膜的方法 |
JP2003282903A (ja) * | 2002-03-25 | 2003-10-03 | Sanyo Electric Co Ltd | 太陽電池装置 |
CN1841787A (zh) * | 2005-03-29 | 2006-10-04 | 三洋电机株式会社 | 光电动势元件和该光电动势元件的制造方法 |
CN1941428A (zh) * | 2005-09-30 | 2007-04-04 | 三洋电机株式会社 | 太阳能电池单元及太阳能电池模块以及制造方法 |
CN101017858A (zh) * | 2007-01-10 | 2007-08-15 | 北京市太阳能研究所有限公司 | 一种背接触式太阳能电池及其制作方法 |
CN101118914A (zh) * | 2007-08-31 | 2008-02-06 | 李毅 | 一种太阳能电池及制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1972102B (zh) * | 2006-10-19 | 2010-08-18 | 上海大学 | 静电致动折叠梁式纳米级步进微致动器 |
-
2010
- 2010-04-14 CN CN2010101501023A patent/CN101976657B/zh not_active Expired - Fee Related
- 2010-04-14 CN CN201010150100.4A patent/CN102122679B/zh not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101687A (en) * | 1978-01-27 | 1979-08-10 | Sharp Corp | Solar battery unit |
CN85103355A (zh) * | 1984-12-10 | 1986-11-12 | 三洋电机株式会社 | 光电池 |
CN1243602A (zh) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | 制备薄硅膜的方法 |
JPH1190923A (ja) * | 1997-09-19 | 1999-04-06 | Hitachi Cable Ltd | マルチワイヤソーによる切断方法 |
CN1241038A (zh) * | 1998-06-12 | 2000-01-12 | 佳能株式会社 | 太阳能电池组件、电池组件列、电池系统及其监控方法 |
JP2003282903A (ja) * | 2002-03-25 | 2003-10-03 | Sanyo Electric Co Ltd | 太陽電池装置 |
CN1841787A (zh) * | 2005-03-29 | 2006-10-04 | 三洋电机株式会社 | 光电动势元件和该光电动势元件的制造方法 |
CN1941428A (zh) * | 2005-09-30 | 2007-04-04 | 三洋电机株式会社 | 太阳能电池单元及太阳能电池模块以及制造方法 |
CN101017858A (zh) * | 2007-01-10 | 2007-08-15 | 北京市太阳能研究所有限公司 | 一种背接触式太阳能电池及其制作方法 |
CN101118914A (zh) * | 2007-08-31 | 2008-02-06 | 李毅 | 一种太阳能电池及制造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593232A (zh) * | 2012-03-19 | 2012-07-18 | 厦门大学 | 一种横向结构的pn太阳能电池及其制备方法 |
CN102593232B (zh) * | 2012-03-19 | 2014-09-03 | 厦门大学 | 一种横向结构的pn太阳能电池及其制备方法 |
CN103378211A (zh) * | 2012-04-19 | 2013-10-30 | 聚日(苏州)科技有限公司 | 太阳能电池单元及其制造方法 |
CN103378211B (zh) * | 2012-04-19 | 2017-02-15 | 聚日(苏州)科技有限公司 | 太阳能电池单元及其制造方法 |
CN103579407A (zh) * | 2012-07-26 | 2014-02-12 | 聚日(苏州)科技有限公司 | 一种太阳能电池及其制造方法 |
CN110277463A (zh) * | 2019-07-10 | 2019-09-24 | 中威新能源(成都)有限公司 | 一种太阳能电池结构制作方法 |
CN110277463B (zh) * | 2019-07-10 | 2024-03-15 | 通威太阳能(成都)有限公司 | 一种太阳能电池结构制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101976657A (zh) | 2011-02-16 |
CN102122679B (zh) | 2014-08-06 |
CN101976657B (zh) | 2013-10-30 |
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Owner name: SUNOVEL (SUZHOU) TECHNOLOGIES LIMITED Free format text: FORMER OWNER: ZHU HUILONG Effective date: 20121101 Free format text: FORMER OWNER: LO ZHIJIONG YIN HAIZHOU Effective date: 20121101 |
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Effective date of registration: 20121101 Address after: 215123 Suzhou City, Suzhou Province Industrial Park, No. love road, No. 188 Applicant after: ZHU, Huilong Address before: American New York Applicant before: Zhu Huilong Applicant before: Luo Zhijiong Applicant before: Yin Haizhou |
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Effective date of registration: 20201230 Address after: 224000 room 312, building 3, R & D center, 69 East Ring Road, Yancheng Economic and Technological Development Zone, Jiangsu Province Patentee after: JIANGSU CHINESE TECHNOLOGY TECHNOLOGY SERVICE Co.,Ltd. Address before: 215123 No.188, Ren'ai Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: ZHU, Huilong |
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Effective date of registration: 20210709 Address after: Room 309, building 1, No.69, Donghuan South Road, Yancheng Economic and Technological Development Zone, Jiangsu 224000 Patentee after: Jiangsu Yanxin Automobile Industry Investment Development Co.,Ltd. Address before: 224000 room 312, building 3, R & D center, 69 East Ring Road, Yancheng Economic and Technological Development Zone, Jiangsu Province Patentee before: JIANGSU CHINESE TECHNOLOGY TECHNOLOGY SERVICE Co.,Ltd. |
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Granted publication date: 20140806 |