CN1230925C - 有机薄膜晶体管 - Google Patents

有机薄膜晶体管 Download PDF

Info

Publication number
CN1230925C
CN1230925C CNB021472424A CN02147242A CN1230925C CN 1230925 C CN1230925 C CN 1230925C CN B021472424 A CNB021472424 A CN B021472424A CN 02147242 A CN02147242 A CN 02147242A CN 1230925 C CN1230925 C CN 1230925C
Authority
CN
China
Prior art keywords
changing
base
group
phenanthroline
phenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021472424A
Other languages
English (en)
Chinese (zh)
Other versions
CN1412864A (zh
Inventor
东口达
小田敦
石川仁志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1412864A publication Critical patent/CN1412864A/zh
Application granted granted Critical
Publication of CN1230925C publication Critical patent/CN1230925C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/625Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing at least one aromatic ring having 7 or more carbon atoms, e.g. azulene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/624Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
CNB021472424A 2001-10-18 2002-10-18 有机薄膜晶体管 Expired - Fee Related CN1230925C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001320342A JP3823312B2 (ja) 2001-10-18 2001-10-18 有機薄膜トランジスタ
JP2001320342 2001-10-18

Publications (2)

Publication Number Publication Date
CN1412864A CN1412864A (zh) 2003-04-23
CN1230925C true CN1230925C (zh) 2005-12-07

Family

ID=19137745

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021472424A Expired - Fee Related CN1230925C (zh) 2001-10-18 2002-10-18 有机薄膜晶体管

Country Status (3)

Country Link
US (1) US6747287B1 (US06747287-20040608-C00024.png)
JP (1) JP3823312B2 (US06747287-20040608-C00024.png)
CN (1) CN1230925C (US06747287-20040608-C00024.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742368A (zh) * 2009-04-21 2016-07-06 希百特股份有限公司 双重自对准金属氧化物tft

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651083A (ja) * 1992-07-28 1994-02-25 Ishikawajima Harima Heavy Ind Co Ltd 原子炉サプレッションプールの冷却装置
CN100492697C (zh) * 2003-08-22 2009-05-27 松下电器产业株式会社 纵型有机fet及其制造方法
JP2005075868A (ja) * 2003-08-29 2005-03-24 Fujitsu Ltd 蛍光材料、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンスディスプレイ
WO2005069383A1 (ja) * 2004-01-15 2005-07-28 Matsushita Electric Industrial Co., Ltd. 電界効果トランジスタ及びそれを用いた表示装置
EP1624500B1 (de) 2004-08-05 2016-03-16 Novaled GmbH Spiro-Bifluoren Verbindungen als organisches Halbleiter-Matrixmaterial
US7540978B2 (en) * 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
EP1792893A4 (en) * 2004-08-31 2007-11-21 Idemitsu Kosan Co AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS
DE602004006275T2 (de) 2004-10-07 2007-12-20 Novaled Ag Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium
KR100647660B1 (ko) * 2004-11-19 2006-11-23 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 채용한 평판표시장치
EP1846963A4 (en) * 2005-02-08 2010-08-04 Semiconductor Energy Lab LIGHT ELEMENT, ILLUMINATING ELEMENT AND ELECTRONIC DEVICE
JP2006332614A (ja) * 2005-04-25 2006-12-07 Semiconductor Energy Lab Co Ltd 半導体装置、有機トランジスタ及びその作製方法
US20060270066A1 (en) 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
EP1727221B1 (de) * 2005-05-27 2010-04-14 Novaled AG Transparente organische Leuchtdiode
EP1729346A1 (de) * 2005-06-01 2006-12-06 Novaled AG Lichtemittierendes Bauteil mit einer Elektrodenanordnung
EP1739765A1 (de) * 2005-07-01 2007-01-03 Novaled AG Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden
DE502005009802D1 (de) * 2005-11-10 2010-08-05 Novaled Ag Dotiertes organisches Halbleitermaterial
US7919010B2 (en) * 2005-12-22 2011-04-05 Novaled Ag Doped organic semiconductor material
EP1837927A1 (de) * 2006-03-22 2007-09-26 Novaled AG Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern
EP1837926B1 (de) * 2006-03-21 2008-05-07 Novaled AG Heterocyclisches Radikal oder Diradikal, deren Dimere, Oligomere, Polymere, Dispiroverbindungen und Polycyclen, deren Verwendung, organisches halbleitendes Material sowie elektronisches Bauelement
US8247801B2 (en) * 2006-03-31 2012-08-21 Imec Organic semi-conductor photo-detecting device
TWI300251B (en) * 2006-07-14 2008-08-21 Ind Tech Res Inst Manufacturing method of vertical thin film transistor
JP5368797B2 (ja) * 2006-10-12 2013-12-18 出光興産株式会社 有機薄膜トランジスタ素子及び有機薄膜発光トランジスタ
DE102007012794B3 (de) * 2007-03-16 2008-06-19 Novaled Ag Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial
DE102007018456B4 (de) * 2007-04-19 2022-02-24 Novaled Gmbh Verwendung von Hauptgruppenelementhalogeniden und/oder -pseudohalogeniden, organisches halbleitendes Matrixmaterial, elektronische und optoelektronische Bauelemente
JP5373769B2 (ja) * 2007-04-26 2013-12-18 エルジー・ケム・リミテッド 新規のジアミン誘導体およびこれを用いた有機電子素子
EP1988587B1 (de) 2007-04-30 2016-12-07 Novaled GmbH Oxokohlenstoff-, Pseudooxokohlenstoff- und Radialenverbindungen sowie deren Verwendung
EP1990847B1 (de) * 2007-05-10 2018-06-20 Novaled GmbH Verwendung von chinoiden Bisimidazolen und deren Derivaten als Dotand zur Dotierung eines organischen halbleitenden Matrixmaterials
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
DE102007031220B4 (de) * 2007-07-04 2022-04-28 Novaled Gmbh Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen
CN101952250B (zh) 2007-12-03 2014-11-26 株式会社半导体能源研究所 咔唑衍生物,以及使用咔唑衍生物的发光元件、发光器件和电子器件
US8057712B2 (en) * 2008-04-29 2011-11-15 Novaled Ag Radialene compounds and their use
WO2010016405A1 (ja) * 2008-08-07 2010-02-11 出光興産株式会社 新規芳香族アミン誘導体及びそれを用いた有機エレクトロルミネッセンス素子
DE102010013068A1 (de) * 2010-03-26 2011-09-29 Merck Patent Gmbh Verbindungen für elektronische Vorrichtungen
DE102010045405A1 (de) * 2010-09-15 2012-03-15 Merck Patent Gmbh Materialien für organische Elektrolumineszenzvorrichtungen
EP2655316A2 (en) * 2010-12-20 2013-10-30 E.I. Du Pont De Nemours And Company Electroactive materials
EP2660300B1 (en) * 2010-12-29 2019-02-13 LG Chem, Ltd. Novel compound, and organic light-emitting device using same
JP5814044B2 (ja) * 2011-08-16 2015-11-17 富士フイルム株式会社 光電変換素子およびその使用方法、撮像素子、光センサ
JP2015534545A (ja) * 2012-09-04 2015-12-03 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 新規スピロ化合物並びに有機エレクトロニクス用途及びデバイスにおけるその使用
WO2017061779A1 (ko) * 2015-10-06 2017-04-13 주식회사 엘지화학 아민 화합물 및 이를 포함하는 유기 발광 소자
KR102032599B1 (ko) 2015-10-06 2019-10-15 주식회사 엘지화학 아민 화합물 및 이를 포함하는 유기 발광 소자
CN107778212A (zh) * 2016-08-26 2018-03-09 北京鼎材科技有限公司 一种1,5‑二取代萘衍生物及其应用
CN107778213A (zh) * 2016-08-26 2018-03-09 北京鼎材科技有限公司 一种1,4‑二取代萘衍生物及应用
CN109928885B (zh) * 2017-12-19 2022-11-29 北京夏禾科技有限公司 四邻亚苯三芳胺化合物
CN115636822A (zh) * 2021-07-19 2023-01-24 上海和辉光电股份有限公司 一种电子传输材料及其制备方法和应用
CN116003269A (zh) * 2022-11-29 2023-04-25 广东省大湾区华南理工大学聚集诱导发光高等研究院 一种三苯基乙烯衍生物以及包含其的有机电致发光器件

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214916A (en) * 1979-02-05 1980-07-29 Arthur Bradley Thin film photovoltaic converter and method of preparing same
US5152805A (en) * 1989-12-29 1992-10-06 Gte Laboratories Incorporated M-I-M' device and fabrication method
JPH0555568A (ja) 1991-08-28 1993-03-05 Asahi Chem Ind Co Ltd 有機薄膜トランジスタ
US5518767A (en) * 1993-07-01 1996-05-21 Massachusetts Institute Of Technology Molecular self-assembly of electrically conductive polymers
WO1996004687A1 (fr) * 1994-08-05 1996-02-15 Hoechst Aktiengesellschaft Diode electroluminescente organique a jonction p-n
US6278127B1 (en) 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US5574291A (en) 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
EP1342769B1 (en) * 1996-08-19 2010-01-27 TDK Corporation Organic EL Device
US5969376A (en) * 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
JP4085438B2 (ja) 1996-10-17 2008-05-14 松下電器産業株式会社 有機薄膜トランジスタ及び液晶素子と有機発光素子
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
TW399338B (en) 1997-11-24 2000-07-21 Lucent Technologies Inc Method of making an organic thin film transistor and article made by the method
US6316098B1 (en) * 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
WO1999066540A2 (en) * 1998-06-19 1999-12-23 Thin Film Electronics Asa An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
JP2000174277A (ja) 1998-12-01 2000-06-23 Hitachi Ltd 薄膜トランジスタおよびその製造方法
US6387727B1 (en) 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
JP2001019947A (ja) * 1999-07-06 2001-01-23 Fuji Photo Film Co Ltd 新規重合体、発光素子材料およびそれを使用した発光素子
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6621098B1 (en) * 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
KR100462712B1 (ko) * 2000-08-10 2004-12-20 마쯔시다덴기산교 가부시키가이샤 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742368A (zh) * 2009-04-21 2016-07-06 希百特股份有限公司 双重自对准金属氧化物tft

Also Published As

Publication number Publication date
JP2003124472A (ja) 2003-04-25
JP3823312B2 (ja) 2006-09-20
CN1412864A (zh) 2003-04-23
US6747287B1 (en) 2004-06-08

Similar Documents

Publication Publication Date Title
CN1230925C (zh) 有机薄膜晶体管
CN1708475A (zh) 芳族胺衍生物和使用其的有机电致发光元件
CN1213127C (zh) 有机电致发光器件与苯二胺衍生物
CN1303184C (zh) 高效电致发光器件
CN1837324A (zh) 复合材料,使用这种复合材料的发光元件和发光装置
CN101041633A (zh) 芳香胺化合物和利用该芳香胺化合物的发光元件、发光装置、和电子设备
CN1906268A (zh) 用于注入或传输空穴的新材料以及使用该材料的有机电致发光器件
CN1659931A (zh) 场致发光器件
CN1239446C (zh) 稠合八环芳族化合物,和使用它的有机电致发光元件和有机电致发光显示器
CN1631890A (zh) 四苯基卟啉衍生物及其在有机电致发光器件中的应用
CN101068796A (zh) 化合物、组合物和薄膜
CN1893144A (zh) 复合材料及其发光元件、发光装置和电子装置
CN1675399A (zh) 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底
CN1918260A (zh) 用于有机电致发光元件的材料和使用该材料的有机电致发光元件
CN101048465A (zh) 高分子发光体组合物以及高分子发光元件
CN1173886A (zh) 聚酰胺酸,聚酰亚胺膜和液晶取向膜以及用它们制成的液晶显示元件
CN1703937A (zh) 有机电致发光的器件
CN1036029A (zh) 超扭曲-液晶显示(元件)
CN86101044A (zh) 含有联苯酯类的液晶混合材料以及使用它们的装置
CN1526002A (zh) 有机电致发光器件用组合物和使用该组合物的有机电致发光器件
CN101061202A (zh) 液晶组合物
CN1872836A (zh) 有机半导体材料,有机半导体薄膜和有机半导体器件
CN1751024A (zh) 含氮杂环衍生物以及使用该衍生物的有机电致发光元件
CN1042173A (zh) 超扭曲液晶显示器
CN1930921A (zh) 电荷输送膜用组合物和离子化合物、电荷输送膜和有机电致发光器件及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20051207

Termination date: 20131018