CN1230925C - 有机薄膜晶体管 - Google Patents
有机薄膜晶体管 Download PDFInfo
- Publication number
- CN1230925C CN1230925C CNB021472424A CN02147242A CN1230925C CN 1230925 C CN1230925 C CN 1230925C CN B021472424 A CNB021472424 A CN B021472424A CN 02147242 A CN02147242 A CN 02147242A CN 1230925 C CN1230925 C CN 1230925C
- Authority
- CN
- China
- Prior art keywords
- changing
- base
- group
- phenanthroline
- phenyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/625—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing at least one aromatic ring having 7 or more carbon atoms, e.g. azulene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001320342A JP3823312B2 (ja) | 2001-10-18 | 2001-10-18 | 有機薄膜トランジスタ |
JP2001320342 | 2001-10-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1412864A CN1412864A (zh) | 2003-04-23 |
CN1230925C true CN1230925C (zh) | 2005-12-07 |
Family
ID=19137745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021472424A Expired - Fee Related CN1230925C (zh) | 2001-10-18 | 2002-10-18 | 有机薄膜晶体管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6747287B1 (US06747287-20040608-C00024.png) |
JP (1) | JP3823312B2 (US06747287-20040608-C00024.png) |
CN (1) | CN1230925C (US06747287-20040608-C00024.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742368A (zh) * | 2009-04-21 | 2016-07-06 | 希百特股份有限公司 | 双重自对准金属氧化物tft |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0651083A (ja) * | 1992-07-28 | 1994-02-25 | Ishikawajima Harima Heavy Ind Co Ltd | 原子炉サプレッションプールの冷却装置 |
CN100492697C (zh) * | 2003-08-22 | 2009-05-27 | 松下电器产业株式会社 | 纵型有机fet及其制造方法 |
JP2005075868A (ja) * | 2003-08-29 | 2005-03-24 | Fujitsu Ltd | 蛍光材料、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンスディスプレイ |
WO2005069383A1 (ja) * | 2004-01-15 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | 電界効果トランジスタ及びそれを用いた表示装置 |
EP1624500B1 (de) | 2004-08-05 | 2016-03-16 | Novaled GmbH | Spiro-Bifluoren Verbindungen als organisches Halbleiter-Matrixmaterial |
US7540978B2 (en) * | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
EP1792893A4 (en) * | 2004-08-31 | 2007-11-21 | Idemitsu Kosan Co | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS |
DE602004006275T2 (de) | 2004-10-07 | 2007-12-20 | Novaled Ag | Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium |
KR100647660B1 (ko) * | 2004-11-19 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 채용한 평판표시장치 |
EP1846963A4 (en) * | 2005-02-08 | 2010-08-04 | Semiconductor Energy Lab | LIGHT ELEMENT, ILLUMINATING ELEMENT AND ELECTRONIC DEVICE |
JP2006332614A (ja) * | 2005-04-25 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、有機トランジスタ及びその作製方法 |
US20060270066A1 (en) | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
EP1727221B1 (de) * | 2005-05-27 | 2010-04-14 | Novaled AG | Transparente organische Leuchtdiode |
EP1729346A1 (de) * | 2005-06-01 | 2006-12-06 | Novaled AG | Lichtemittierendes Bauteil mit einer Elektrodenanordnung |
EP1739765A1 (de) * | 2005-07-01 | 2007-01-03 | Novaled AG | Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden |
DE502005009802D1 (de) * | 2005-11-10 | 2010-08-05 | Novaled Ag | Dotiertes organisches Halbleitermaterial |
US7919010B2 (en) * | 2005-12-22 | 2011-04-05 | Novaled Ag | Doped organic semiconductor material |
EP1837927A1 (de) * | 2006-03-22 | 2007-09-26 | Novaled AG | Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern |
EP1837926B1 (de) * | 2006-03-21 | 2008-05-07 | Novaled AG | Heterocyclisches Radikal oder Diradikal, deren Dimere, Oligomere, Polymere, Dispiroverbindungen und Polycyclen, deren Verwendung, organisches halbleitendes Material sowie elektronisches Bauelement |
US8247801B2 (en) * | 2006-03-31 | 2012-08-21 | Imec | Organic semi-conductor photo-detecting device |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
JP5368797B2 (ja) * | 2006-10-12 | 2013-12-18 | 出光興産株式会社 | 有機薄膜トランジスタ素子及び有機薄膜発光トランジスタ |
DE102007012794B3 (de) * | 2007-03-16 | 2008-06-19 | Novaled Ag | Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial |
DE102007018456B4 (de) * | 2007-04-19 | 2022-02-24 | Novaled Gmbh | Verwendung von Hauptgruppenelementhalogeniden und/oder -pseudohalogeniden, organisches halbleitendes Matrixmaterial, elektronische und optoelektronische Bauelemente |
JP5373769B2 (ja) * | 2007-04-26 | 2013-12-18 | エルジー・ケム・リミテッド | 新規のジアミン誘導体およびこれを用いた有機電子素子 |
EP1988587B1 (de) | 2007-04-30 | 2016-12-07 | Novaled GmbH | Oxokohlenstoff-, Pseudooxokohlenstoff- und Radialenverbindungen sowie deren Verwendung |
EP1990847B1 (de) * | 2007-05-10 | 2018-06-20 | Novaled GmbH | Verwendung von chinoiden Bisimidazolen und deren Derivaten als Dotand zur Dotierung eines organischen halbleitenden Matrixmaterials |
US20090001356A1 (en) * | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
US7879688B2 (en) * | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
DE102007031220B4 (de) * | 2007-07-04 | 2022-04-28 | Novaled Gmbh | Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen |
CN101952250B (zh) | 2007-12-03 | 2014-11-26 | 株式会社半导体能源研究所 | 咔唑衍生物,以及使用咔唑衍生物的发光元件、发光器件和电子器件 |
US8057712B2 (en) * | 2008-04-29 | 2011-11-15 | Novaled Ag | Radialene compounds and their use |
WO2010016405A1 (ja) * | 2008-08-07 | 2010-02-11 | 出光興産株式会社 | 新規芳香族アミン誘導体及びそれを用いた有機エレクトロルミネッセンス素子 |
DE102010013068A1 (de) * | 2010-03-26 | 2011-09-29 | Merck Patent Gmbh | Verbindungen für elektronische Vorrichtungen |
DE102010045405A1 (de) * | 2010-09-15 | 2012-03-15 | Merck Patent Gmbh | Materialien für organische Elektrolumineszenzvorrichtungen |
EP2655316A2 (en) * | 2010-12-20 | 2013-10-30 | E.I. Du Pont De Nemours And Company | Electroactive materials |
EP2660300B1 (en) * | 2010-12-29 | 2019-02-13 | LG Chem, Ltd. | Novel compound, and organic light-emitting device using same |
JP5814044B2 (ja) * | 2011-08-16 | 2015-11-17 | 富士フイルム株式会社 | 光電変換素子およびその使用方法、撮像素子、光センサ |
JP2015534545A (ja) * | 2012-09-04 | 2015-12-03 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 新規スピロ化合物並びに有機エレクトロニクス用途及びデバイスにおけるその使用 |
WO2017061779A1 (ko) * | 2015-10-06 | 2017-04-13 | 주식회사 엘지화학 | 아민 화합물 및 이를 포함하는 유기 발광 소자 |
KR102032599B1 (ko) | 2015-10-06 | 2019-10-15 | 주식회사 엘지화학 | 아민 화합물 및 이를 포함하는 유기 발광 소자 |
CN107778212A (zh) * | 2016-08-26 | 2018-03-09 | 北京鼎材科技有限公司 | 一种1,5‑二取代萘衍生物及其应用 |
CN107778213A (zh) * | 2016-08-26 | 2018-03-09 | 北京鼎材科技有限公司 | 一种1,4‑二取代萘衍生物及应用 |
CN109928885B (zh) * | 2017-12-19 | 2022-11-29 | 北京夏禾科技有限公司 | 四邻亚苯三芳胺化合物 |
CN115636822A (zh) * | 2021-07-19 | 2023-01-24 | 上海和辉光电股份有限公司 | 一种电子传输材料及其制备方法和应用 |
CN116003269A (zh) * | 2022-11-29 | 2023-04-25 | 广东省大湾区华南理工大学聚集诱导发光高等研究院 | 一种三苯基乙烯衍生物以及包含其的有机电致发光器件 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4214916A (en) * | 1979-02-05 | 1980-07-29 | Arthur Bradley | Thin film photovoltaic converter and method of preparing same |
US5152805A (en) * | 1989-12-29 | 1992-10-06 | Gte Laboratories Incorporated | M-I-M' device and fabrication method |
JPH0555568A (ja) | 1991-08-28 | 1993-03-05 | Asahi Chem Ind Co Ltd | 有機薄膜トランジスタ |
US5518767A (en) * | 1993-07-01 | 1996-05-21 | Massachusetts Institute Of Technology | Molecular self-assembly of electrically conductive polymers |
WO1996004687A1 (fr) * | 1994-08-05 | 1996-02-15 | Hoechst Aktiengesellschaft | Diode electroluminescente organique a jonction p-n |
US6278127B1 (en) | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US6326640B1 (en) * | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
EP1342769B1 (en) * | 1996-08-19 | 2010-01-27 | TDK Corporation | Organic EL Device |
US5969376A (en) * | 1996-08-23 | 1999-10-19 | Lucent Technologies Inc. | Organic thin film transistor having a phthalocyanine semiconductor layer |
JP4085438B2 (ja) | 1996-10-17 | 2008-05-14 | 松下電器産業株式会社 | 有機薄膜トランジスタ及び液晶素子と有機発光素子 |
US6107117A (en) | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
TW399338B (en) | 1997-11-24 | 2000-07-21 | Lucent Technologies Inc | Method of making an organic thin film transistor and article made by the method |
US6316098B1 (en) * | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
WO1999066540A2 (en) * | 1998-06-19 | 1999-12-23 | Thin Film Electronics Asa | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
JP2000174277A (ja) | 1998-12-01 | 2000-06-23 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
JP2001019947A (ja) * | 1999-07-06 | 2001-01-23 | Fuji Photo Film Co Ltd | 新規重合体、発光素子材料およびそれを使用した発光素子 |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
JP2001094107A (ja) | 1999-09-20 | 2001-04-06 | Hitachi Ltd | 有機半導体装置及び液晶表示装置 |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6621098B1 (en) * | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
KR100462712B1 (ko) * | 2000-08-10 | 2004-12-20 | 마쯔시다덴기산교 가부시키가이샤 | 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치 |
-
2001
- 2001-10-18 JP JP2001320342A patent/JP3823312B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-17 US US10/272,962 patent/US6747287B1/en not_active Expired - Fee Related
- 2002-10-18 CN CNB021472424A patent/CN1230925C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742368A (zh) * | 2009-04-21 | 2016-07-06 | 希百特股份有限公司 | 双重自对准金属氧化物tft |
Also Published As
Publication number | Publication date |
---|---|
JP2003124472A (ja) | 2003-04-25 |
JP3823312B2 (ja) | 2006-09-20 |
CN1412864A (zh) | 2003-04-23 |
US6747287B1 (en) | 2004-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1230925C (zh) | 有机薄膜晶体管 | |
CN1708475A (zh) | 芳族胺衍生物和使用其的有机电致发光元件 | |
CN1213127C (zh) | 有机电致发光器件与苯二胺衍生物 | |
CN1303184C (zh) | 高效电致发光器件 | |
CN1837324A (zh) | 复合材料,使用这种复合材料的发光元件和发光装置 | |
CN101041633A (zh) | 芳香胺化合物和利用该芳香胺化合物的发光元件、发光装置、和电子设备 | |
CN1906268A (zh) | 用于注入或传输空穴的新材料以及使用该材料的有机电致发光器件 | |
CN1659931A (zh) | 场致发光器件 | |
CN1239446C (zh) | 稠合八环芳族化合物,和使用它的有机电致发光元件和有机电致发光显示器 | |
CN1631890A (zh) | 四苯基卟啉衍生物及其在有机电致发光器件中的应用 | |
CN101068796A (zh) | 化合物、组合物和薄膜 | |
CN1893144A (zh) | 复合材料及其发光元件、发光装置和电子装置 | |
CN1675399A (zh) | 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底 | |
CN1918260A (zh) | 用于有机电致发光元件的材料和使用该材料的有机电致发光元件 | |
CN101048465A (zh) | 高分子发光体组合物以及高分子发光元件 | |
CN1173886A (zh) | 聚酰胺酸,聚酰亚胺膜和液晶取向膜以及用它们制成的液晶显示元件 | |
CN1703937A (zh) | 有机电致发光的器件 | |
CN1036029A (zh) | 超扭曲-液晶显示(元件) | |
CN86101044A (zh) | 含有联苯酯类的液晶混合材料以及使用它们的装置 | |
CN1526002A (zh) | 有机电致发光器件用组合物和使用该组合物的有机电致发光器件 | |
CN101061202A (zh) | 液晶组合物 | |
CN1872836A (zh) | 有机半导体材料,有机半导体薄膜和有机半导体器件 | |
CN1751024A (zh) | 含氮杂环衍生物以及使用该衍生物的有机电致发光元件 | |
CN1042173A (zh) | 超扭曲液晶显示器 | |
CN1930921A (zh) | 电荷输送膜用组合物和离子化合物、电荷输送膜和有机电致发光器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051207 Termination date: 20131018 |