CN1224874C - 安装存储装置不受数量限制的寄存器和存储模块 - Google Patents
安装存储装置不受数量限制的寄存器和存储模块 Download PDFInfo
- Publication number
- CN1224874C CN1224874C CNB021271860A CN02127186A CN1224874C CN 1224874 C CN1224874 C CN 1224874C CN B021271860 A CNB021271860 A CN B021271860A CN 02127186 A CN02127186 A CN 02127186A CN 1224874 C CN1224874 C CN 1224874C
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- signal
- address signal
- metainstruction
- external timing
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- 230000005055 memory storage Effects 0.000 claims description 42
- 238000003860 storage Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 108091092195 Intron Proteins 0.000 claims 1
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Memory System (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Executing Machine-Instructions (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001229230A JP4812976B2 (ja) | 2001-07-30 | 2001-07-30 | レジスタ、メモリモジュール及びメモリシステム |
JP229230/2001 | 2001-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1400514A CN1400514A (zh) | 2003-03-05 |
CN1224874C true CN1224874C (zh) | 2005-10-26 |
Family
ID=19061614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021271860A Expired - Fee Related CN1224874C (zh) | 2001-07-30 | 2002-07-30 | 安装存储装置不受数量限制的寄存器和存储模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6707726B2 (zh) |
JP (1) | JP4812976B2 (zh) |
KR (1) | KR100523716B1 (zh) |
CN (1) | CN1224874C (zh) |
DE (1) | DE10235739B4 (zh) |
TW (1) | TW573244B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003044349A (ja) * | 2001-07-30 | 2003-02-14 | Elpida Memory Inc | レジスタ及び信号生成方法 |
KR100470995B1 (ko) * | 2002-04-23 | 2005-03-08 | 삼성전자주식회사 | 클럭수신 동기회로를 갖는 멀티클럭 도메인 데이터 입력처리장치 및 그에 따른 클럭신호 인가방법 |
JP3838939B2 (ja) | 2002-05-22 | 2006-10-25 | エルピーダメモリ株式会社 | メモリシステムとモジュール及びレジスタ |
US7200024B2 (en) * | 2002-08-02 | 2007-04-03 | Micron Technology, Inc. | System and method for optically interconnecting memory devices |
US7254331B2 (en) * | 2002-08-09 | 2007-08-07 | Micron Technology, Inc. | System and method for multiple bit optical data transmission in memory systems |
US7836252B2 (en) * | 2002-08-29 | 2010-11-16 | Micron Technology, Inc. | System and method for optimizing interconnections of memory devices in a multichip module |
TW571783U (en) * | 2003-04-29 | 2004-01-11 | Li-Ping Ju | Arc-edged exercise device with stable base |
US7245145B2 (en) * | 2003-06-11 | 2007-07-17 | Micron Technology, Inc. | Memory module and method having improved signal routing topology |
US7120743B2 (en) | 2003-10-20 | 2006-10-10 | Micron Technology, Inc. | Arbitration system and method for memory responses in a hub-based memory system |
US7234070B2 (en) * | 2003-10-27 | 2007-06-19 | Micron Technology, Inc. | System and method for using a learning sequence to establish communications on a high-speed nonsynchronous interface in the absence of clock forwarding |
KR100574951B1 (ko) * | 2003-10-31 | 2006-05-02 | 삼성전자주식회사 | 개선된 레지스터 배치 구조를 가지는 메모리 모듈 |
US7181584B2 (en) * | 2004-02-05 | 2007-02-20 | Micron Technology, Inc. | Dynamic command and/or address mirroring system and method for memory modules |
US7366864B2 (en) * | 2004-03-08 | 2008-04-29 | Micron Technology, Inc. | Memory hub architecture having programmable lane widths |
US7120723B2 (en) * | 2004-03-25 | 2006-10-10 | Micron Technology, Inc. | System and method for memory hub-based expansion bus |
US7590797B2 (en) * | 2004-04-08 | 2009-09-15 | Micron Technology, Inc. | System and method for optimizing interconnections of components in a multichip memory module |
US7220742B2 (en) * | 2004-05-14 | 2007-05-22 | Boehringer Ingelheim International Gmbh | Enantiomerically pure beta agonists, process for the manufacture thereof and use thereof as medicaments |
US7222213B2 (en) * | 2004-05-17 | 2007-05-22 | Micron Technology, Inc. | System and method for communicating the synchronization status of memory modules during initialization of the memory modules |
US7392331B2 (en) * | 2004-08-31 | 2008-06-24 | Micron Technology, Inc. | System and method for transmitting data packets in a computer system having a memory hub architecture |
KR100640629B1 (ko) | 2005-01-12 | 2006-10-31 | 삼성전자주식회사 | 동기식 반도체 메모리 장치의 지연 동기 루프 회로 및동기식 반도체 메모리 장치의 데이터 핀에 연결된 부하의정보를 생성하는 방법 |
JP4808414B2 (ja) | 2005-01-31 | 2011-11-02 | 富士通株式会社 | コンピュータシステム及びメモリシステム |
KR100588593B1 (ko) * | 2005-06-09 | 2006-06-14 | 삼성전자주식회사 | 레지스터형 메모리 모듈 및 그 제어방법 |
KR100753081B1 (ko) * | 2005-09-29 | 2007-08-31 | 주식회사 하이닉스반도체 | 내부 어드레스 생성장치를 구비하는 반도체메모리소자 |
KR100659159B1 (ko) * | 2005-12-07 | 2006-12-19 | 삼성전자주식회사 | 메모리 모듈 |
KR100812602B1 (ko) * | 2006-09-29 | 2008-03-13 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그 구동방법 |
US7653758B2 (en) * | 2006-10-19 | 2010-01-26 | Texas Instruments Deutschalnd Gmbh | Memory system with memory controller and board comprising a digital buffer wherein input/output data and clock signals are applied in parallel |
DE102006049310B4 (de) * | 2006-10-19 | 2011-04-21 | Texas Instruments Deutschland Gmbh | Digitaler Datenpuffer |
KR100910490B1 (ko) * | 2007-12-26 | 2009-08-04 | 주식회사 동부하이텍 | 1/4 주기 지연 클럭 발생기 |
US9412423B2 (en) * | 2012-03-15 | 2016-08-09 | Samsung Electronics Co., Ltd. | Memory modules including plural memory devices arranged in rows and module resistor units |
KR102047825B1 (ko) * | 2013-03-06 | 2019-11-22 | 삼성전자 주식회사 | 분주 클록 생성 장치 및 분주 클록 생성 방법 |
KR102467451B1 (ko) * | 2016-06-17 | 2022-11-17 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 시스템 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6088774A (en) * | 1996-09-20 | 2000-07-11 | Advanced Memory International, Inc. | Read/write timing for maximum utilization of bidirectional read/write bus |
US6115318A (en) * | 1996-12-03 | 2000-09-05 | Micron Technology, Inc. | Clock vernier adjustment |
US5946712A (en) * | 1997-06-04 | 1999-08-31 | Oak Technology, Inc. | Apparatus and method for reading data from synchronous memory |
JP4634605B2 (ja) * | 1998-03-12 | 2011-02-16 | エルピーダメモリ株式会社 | データ伝送システム |
US6407963B1 (en) * | 1999-10-19 | 2002-06-18 | Hitachi, Ltd. | Semiconductor memory device of DDR configuration having improvement in glitch immunity |
JP5568204B2 (ja) * | 1999-10-19 | 2014-08-06 | ピーエスフォー ルクスコ エスエイアールエル | 半導体記憶装置 |
US6333893B1 (en) * | 2000-08-21 | 2001-12-25 | Micron Technology, Inc. | Method and apparatus for crossing clock domain boundaries |
KR100396885B1 (ko) * | 2000-09-05 | 2003-09-02 | 삼성전자주식회사 | 고주파 클럭 신호의 주파수를 낮추어 어드레스 및커맨드의 동작 주파수로 사용하고 서로 다른 주파수의클럭 신호들을 수신하는 반도체 메모리 장치, 이를포함하는 메모리 모듈 및 시스템 메모리 모듈 |
GB2370667B (en) * | 2000-09-05 | 2003-02-12 | Samsung Electronics Co Ltd | Semiconductor memory device having altered clock frequency for address and/or command signals, and memory module and system having the same |
US6574154B2 (en) * | 2000-09-12 | 2003-06-03 | Hitachi, Ltd. | Data transmitter |
JP2002109886A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体記憶装置 |
KR100378194B1 (ko) * | 2001-02-19 | 2003-03-29 | 삼성전자주식회사 | 반도체 메모리 장치의 입력 신호의 셋업 시간 및 홀드시간을 조정할 수 있는 메모리 모듈 및 방법 |
US6556494B2 (en) * | 2001-03-14 | 2003-04-29 | Micron Technology, Inc. | High frequency range four bit prefetch output data path |
-
2001
- 2001-07-30 JP JP2001229230A patent/JP4812976B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-29 US US10/206,823 patent/US6707726B2/en not_active Expired - Lifetime
- 2002-07-29 TW TW91116923A patent/TW573244B/zh not_active IP Right Cessation
- 2002-07-30 DE DE10235739A patent/DE10235739B4/de not_active Expired - Lifetime
- 2002-07-30 CN CNB021271860A patent/CN1224874C/zh not_active Expired - Fee Related
- 2002-07-30 KR KR10-2002-0044985A patent/KR100523716B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20030011697A (ko) | 2003-02-11 |
JP2003044350A (ja) | 2003-02-14 |
DE10235739A1 (de) | 2003-03-27 |
US20030031060A1 (en) | 2003-02-13 |
KR100523716B1 (ko) | 2005-10-26 |
US6707726B2 (en) | 2004-03-16 |
TW573244B (en) | 2004-01-21 |
JP4812976B2 (ja) | 2011-11-09 |
DE10235739B4 (de) | 2008-08-14 |
CN1400514A (zh) | 2003-03-05 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ERBIDA MEMORY CO., LTD. Free format text: FORMER OWNER: ERBIDA MEMORY CO., LTD.; RENESAS EAST JAPAN SEMICONDUCTOR CO., LTD.; HITACHI CO., LTD. Effective date: 20071109 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: ERBIDA MEMORY CO., LTD.; EAST JAPAN SEMICONDUCTOR Free format text: FORMER NAME OR ADDRESS: ERBIDA MEMORY CO., LTD.; HITACHI EAST SEMICONDUCTOR CO., LTD.; HITACHI CO., LTD. Owner name: ERBIDA MEMORY CO., LTD.; RENESAS EAST JAPAN SEMICO Free format text: FORMER NAME OR ADDRESS: ERBIDA MEMORY CO., LTD.; EAST JAPAN SEMICONDUCTOR TECHNOLOGY CO., LTD.; HITACHI CO., LTD. |
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CP03 | Change of name, title or address |
Address after: Tokyo, Japan Co-patentee after: Renesas East Japan Semiconductor Corp. Patentee after: Elpida Memory, Inc. Co-patentee after: Hitachi, Ltd. Address before: Tokyo, Japan Co-patentee before: East Japan Semiconductor Technology Corp. Patentee before: Elpida Memory, Inc. Co-patentee before: Hitachi, Ltd. Address after: Tokyo, Japan Co-patentee after: East Japan Semiconductor Technology Corp. Patentee after: Elpida Memory, Inc. Co-patentee after: Hitachi, Ltd. Address before: Tokyo, Japan Co-patentee before: Hitachi Eastern Semiconductor Corp. Patentee before: Elpida Memory, Inc. Co-patentee before: Hitachi, Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20071109 Address after: Tokyo, Japan Patentee after: Elpida Memory, Inc. Address before: Tokyo, Japan Co-patentee before: Renesas East Japan Semiconductor Corp. Patentee before: Elpida Memory, Inc. Co-patentee before: Hitachi, Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: ELPIDA MEMORY INC. Effective date: 20130905 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130905 Address after: Luxemburg Luxemburg Patentee after: PS4 Russport Co.,Ltd. Address before: Tokyo, Japan Patentee before: Elpida Memory, Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051026 Termination date: 20160730 |
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CF01 | Termination of patent right due to non-payment of annual fee |