CN1220915C - 负作用化学放大的光刻胶组合物 - Google Patents
负作用化学放大的光刻胶组合物 Download PDFInfo
- Publication number
- CN1220915C CN1220915C CNB018112641A CN01811264A CN1220915C CN 1220915 C CN1220915 C CN 1220915C CN B018112641 A CNB018112641 A CN B018112641A CN 01811264 A CN01811264 A CN 01811264A CN 1220915 C CN1220915 C CN 1220915C
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- CN
- China
- Prior art keywords
- exposed
- photoetching compositions
- crosslinking chemical
- alkyl
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 36
- 238000004132 cross linking Methods 0.000 claims abstract description 35
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- 239000002253 acid Substances 0.000 claims abstract description 26
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229920000642 polymer Polymers 0.000 claims abstract description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
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- 238000001259 photo etching Methods 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 39
- -1 oxime sulfonates Chemical class 0.000 claims description 30
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- 150000002989 phenols Chemical class 0.000 claims description 17
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical group O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 230000003993 interaction Effects 0.000 claims description 13
- 229920003986 novolac Polymers 0.000 claims description 7
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims description 6
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 6
- 125000001624 naphthyl group Chemical group 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- MGSRCZKZVOBKFT-UHFFFAOYSA-N thymol Chemical compound CC(C)C1=CC=C(C)C=C1O MGSRCZKZVOBKFT-UHFFFAOYSA-N 0.000 claims description 6
- BLRJSXFWDNMKQT-UHFFFAOYSA-N 2-n-methoxy-1,3,5-triazine-2,4,6-triamine Chemical compound CONC1=NC(N)=NC(N)=N1 BLRJSXFWDNMKQT-UHFFFAOYSA-N 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 4
- 229940100630 metacresol Drugs 0.000 claims description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims description 4
- 150000000342 2,4-xylenols Chemical class 0.000 claims description 3
- 150000000343 2,5-xylenols Chemical class 0.000 claims description 3
- 150000000468 3,4-xylenols Chemical class 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- 239000005844 Thymol Substances 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- HVZWVEKIQMJYIK-UHFFFAOYSA-N nitryl chloride Chemical compound [O-][N+](Cl)=O HVZWVEKIQMJYIK-UHFFFAOYSA-N 0.000 claims description 3
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- 125000001475 halogen functional group Chemical group 0.000 claims 2
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- 125000000217 alkyl group Chemical group 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
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- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
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- NGFUWANGZFFYHK-UHFFFAOYSA-N 1,3,3a,4,6,6a-hexahydroimidazo[4,5-d]imidazole-2,5-dione;formaldehyde Chemical compound O=C.N1C(=O)NC2NC(=O)NC21 NGFUWANGZFFYHK-UHFFFAOYSA-N 0.000 description 1
- YFVKHKCZBSGZPE-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-2-(propylamino)propan-1-one Chemical compound CCCNC(C)C(=O)C1=CC=C2OCOC2=C1 YFVKHKCZBSGZPE-UHFFFAOYSA-N 0.000 description 1
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- BPTKLSBRRJFNHJ-UHFFFAOYSA-N 4-phenyldiazenylbenzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1N=NC1=CC=CC=C1 BPTKLSBRRJFNHJ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 102100033806 Alpha-protein kinase 3 Human genes 0.000 description 1
- 101710082399 Alpha-protein kinase 3 Proteins 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XHXUANMFYXWVNG-ADEWGFFLSA-N Menthyl acetate Natural products CC(C)[C@@H]1CC[C@@H](C)C[C@H]1OC(C)=O XHXUANMFYXWVNG-ADEWGFFLSA-N 0.000 description 1
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- 150000007513 acids Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VFGRALUHHHDIQI-UHFFFAOYSA-N butyl 2-hydroxyacetate Chemical compound CCCCOC(=O)CO VFGRALUHHHDIQI-UHFFFAOYSA-N 0.000 description 1
- IWPATTDMSUYMJV-UHFFFAOYSA-N butyl 2-methoxyacetate Chemical compound CCCCOC(=O)COC IWPATTDMSUYMJV-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- NQIZDFMZAXUZCZ-UHFFFAOYSA-N carbifene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(OCC)C(=O)N(C)CCN(C)CCC1=CC=CC=C1 NQIZDFMZAXUZCZ-UHFFFAOYSA-N 0.000 description 1
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- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- UKDLORMZNPQILV-UHFFFAOYSA-N ethyl 3-hydroxypropanoate Chemical compound CCOC(=O)CCO UKDLORMZNPQILV-UHFFFAOYSA-N 0.000 description 1
- KNFXXAGQEUUZAZ-UHFFFAOYSA-N ethyl ethaneperoxoate Chemical compound CCOOC(C)=O KNFXXAGQEUUZAZ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- IVJISJACKSSFGE-UHFFFAOYSA-N formaldehyde;1,3,5-triazine-2,4,6-triamine Chemical compound O=C.NC1=NC(N)=NC(N)=N1 IVJISJACKSSFGE-UHFFFAOYSA-N 0.000 description 1
- MSYLJRIXVZCQHW-UHFFFAOYSA-N formaldehyde;6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound O=C.NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 MSYLJRIXVZCQHW-UHFFFAOYSA-N 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
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- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
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- YVWPDYFVVMNWDT-UHFFFAOYSA-N methyl 2-ethoxypropanoate Chemical class CCOC(C)C(=O)OC YVWPDYFVVMNWDT-UHFFFAOYSA-N 0.000 description 1
- GSJFXBNYJCXDGI-UHFFFAOYSA-N methyl 2-hydroxyacetate Chemical class COC(=O)CO GSJFXBNYJCXDGI-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical class COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/596,098 | 2000-06-16 | ||
US09/596,098 US6576394B1 (en) | 2000-06-16 | 2000-06-16 | Negative-acting chemically amplified photoresist composition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1436324A CN1436324A (zh) | 2003-08-13 |
CN1220915C true CN1220915C (zh) | 2005-09-28 |
Family
ID=24385975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018112641A Expired - Lifetime CN1220915C (zh) | 2000-06-16 | 2001-05-22 | 负作用化学放大的光刻胶组合物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6576394B1 (zh) |
EP (1) | EP1297386B1 (zh) |
JP (1) | JP4799800B2 (zh) |
KR (1) | KR100790412B1 (zh) |
CN (1) | CN1220915C (zh) |
AT (1) | ATE349725T1 (zh) |
DE (1) | DE60125539T2 (zh) |
TW (1) | TW567403B (zh) |
WO (1) | WO2001096960A1 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI242689B (en) * | 2001-07-30 | 2005-11-01 | Tokyo Ohka Kogyo Co Ltd | Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same |
JP4213925B2 (ja) * | 2002-08-19 | 2009-01-28 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
WO2005023952A1 (ja) * | 2003-08-27 | 2005-03-17 | Nok Corporation | 加硫接着剤組成物 |
WO2005103830A1 (ja) * | 2004-04-23 | 2005-11-03 | Tokyo Ohka Kogyo Co., Ltd. | リソグラフィー用リンス液 |
JP2006008792A (ja) * | 2004-06-24 | 2006-01-12 | Tokyo Ohka Kogyo Co Ltd | シート形成用組成物、シート形成用組成物の製造方法、および、ディスプレイパネル製造用シート状未焼成体 |
JP4823562B2 (ja) * | 2005-05-11 | 2011-11-24 | 東京応化工業株式会社 | レジストパターン形成方法 |
KR20080008354A (ko) * | 2005-05-11 | 2008-01-23 | 도오꾜오까고오교 가부시끼가이샤 | 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
KR101298940B1 (ko) * | 2005-08-23 | 2013-08-22 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법 |
TWI407255B (zh) * | 2005-09-22 | 2013-09-01 | Hitachi Chem Dupont Microsys | 負片型感光性樹脂組成物、圖案形成方法以及電子零件 |
JP4923656B2 (ja) * | 2006-03-22 | 2012-04-25 | 日立化成デュポンマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
JP5434588B2 (ja) * | 2007-03-12 | 2014-03-05 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP4637221B2 (ja) * | 2007-09-28 | 2011-02-23 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
JP5316417B2 (ja) * | 2007-10-29 | 2013-10-16 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
JP5850863B2 (ja) | 2010-02-24 | 2016-02-03 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 潜在性酸及びそれらの使用 |
US20130105440A1 (en) | 2011-11-01 | 2013-05-02 | Az Electronic Materials Usa Corp. | Nanocomposite negative photosensitive composition and use thereof |
CN103309160B (zh) | 2013-07-03 | 2015-08-26 | 北京科华微电子材料有限公司 | 一种负性化学放大光刻胶及其成像方法 |
TWI707199B (zh) * | 2014-10-07 | 2020-10-11 | 大陸商蘇州太陽井新能源有限公司 | 使層圖樣化之方法 |
US9994538B2 (en) | 2015-02-02 | 2018-06-12 | Basf Se | Latent acids and their use |
US20170176856A1 (en) | 2015-12-21 | 2017-06-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working photoresist compositions for laser ablation and use thereof |
SG11201908415XA (en) * | 2017-04-25 | 2019-11-28 | Merck Patent Gmbh | Negative resist formulation for producing undercut pattern profiles |
JP7189217B2 (ja) * | 2017-12-28 | 2022-12-13 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | アルカリ可溶性樹脂および架橋剤を含んでなるネガ型リフトオフレジスト組成物、並びに基板上に金属膜パターンを製造する方法 |
KR102691177B1 (ko) | 2018-01-25 | 2024-08-01 | 메르크 파텐트 게엠베하 | 포토레지스트 리무버 조성물 |
CN111512239B (zh) | 2018-01-25 | 2024-05-03 | 默克专利股份有限公司 | 光致抗蚀剂去除剂组合物 |
KR102609919B1 (ko) | 2019-07-11 | 2023-12-04 | 메르크 파텐트 게엠베하 | 포토레지스트 리무버 조성물 |
WO2022128844A1 (en) | 2020-12-15 | 2022-06-23 | Merck Patent Gmbh | Photoresist remover compositions |
CN118284852A (zh) | 2021-11-17 | 2024-07-02 | 默克专利股份有限公司 | 通过湿式化学蚀刻以改善金属结构制造的组合物和方法 |
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US4540598A (en) | 1983-08-17 | 1985-09-10 | Ciba-Geigy Corporation | Process for curing acid-curable finishes |
JP2655370B2 (ja) * | 1991-08-14 | 1997-09-17 | 富士写真フイルム株式会社 | 感光性組成物 |
EP0571330B1 (de) | 1992-05-22 | 1999-04-07 | Ciba SC Holding AG | Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit |
JPH06266101A (ja) * | 1993-03-12 | 1994-09-22 | Japan Synthetic Rubber Co Ltd | ドライ現像用ポジ型レジスト組成物 |
EP0621508B1 (en) * | 1993-04-20 | 1996-09-25 | Japan Synthetic Rubber Co., Ltd. | Radiation sensitive resin composition |
JP3330254B2 (ja) | 1995-04-19 | 2002-09-30 | 東京応化工業株式会社 | ネガ型レジスト組成物 |
JP3456808B2 (ja) | 1995-09-29 | 2003-10-14 | 東京応化工業株式会社 | ホトレジスト組成物 |
CN1133901C (zh) | 1996-09-02 | 2004-01-07 | 西巴特殊化学品控股有限公司 | 用于高感光的高分辨性i-谱线光致抗蚀剂的烷基磺酰肟化合物 |
JP3053072B2 (ja) * | 1996-09-10 | 2000-06-19 | 東京応化工業株式会社 | レジスト積層体及びそれを用いたパターン形成方法 |
JP3515916B2 (ja) * | 1998-11-02 | 2004-04-05 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料 |
-
2000
- 2000-06-16 US US09/596,098 patent/US6576394B1/en not_active Expired - Lifetime
-
2001
- 2001-04-19 TW TW090109439A patent/TW567403B/zh not_active IP Right Cessation
- 2001-05-22 WO PCT/EP2001/005840 patent/WO2001096960A1/en active IP Right Grant
- 2001-05-22 EP EP01934000A patent/EP1297386B1/en not_active Expired - Lifetime
- 2001-05-22 JP JP2002511025A patent/JP4799800B2/ja not_active Expired - Lifetime
- 2001-05-22 DE DE60125539T patent/DE60125539T2/de not_active Expired - Lifetime
- 2001-05-22 AT AT01934000T patent/ATE349725T1/de not_active IP Right Cessation
- 2001-05-22 KR KR1020027016757A patent/KR100790412B1/ko active IP Right Grant
- 2001-05-22 CN CNB018112641A patent/CN1220915C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1297386A1 (en) | 2003-04-02 |
KR20030076229A (ko) | 2003-09-26 |
DE60125539D1 (de) | 2007-02-08 |
TW567403B (en) | 2003-12-21 |
EP1297386B1 (en) | 2006-12-27 |
CN1436324A (zh) | 2003-08-13 |
US6576394B1 (en) | 2003-06-10 |
JP4799800B2 (ja) | 2011-10-26 |
KR100790412B1 (ko) | 2008-01-02 |
JP2004503830A (ja) | 2004-02-05 |
DE60125539T2 (de) | 2007-10-04 |
WO2001096960A1 (en) | 2001-12-20 |
ATE349725T1 (de) | 2007-01-15 |
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