CN1218367C - 薄膜半导体器件的制造方法 - Google Patents

薄膜半导体器件的制造方法 Download PDF

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Publication number
CN1218367C
CN1218367C CN011410027A CN01141002A CN1218367C CN 1218367 C CN1218367 C CN 1218367C CN 011410027 A CN011410027 A CN 011410027A CN 01141002 A CN01141002 A CN 01141002A CN 1218367 C CN1218367 C CN 1218367C
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CN
China
Prior art keywords
film
thin
semiconductor film
semiconductor device
manufacture method
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Expired - Fee Related
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CN011410027A
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English (en)
Chinese (zh)
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CN1338770A (zh
Inventor
宫坂光敏
时冈秀忠
小川哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
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Seiko Epson Corp
Mitsubishi Electric Corp
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Publication of CN1338770A publication Critical patent/CN1338770A/zh
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN011410027A 2000-06-12 2001-06-12 薄膜半导体器件的制造方法 Expired - Fee Related CN1218367C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP175788/00 2000-06-12
JP175788/2000 2000-06-12
JP2000175788 2000-06-12
JP108055/01 2001-04-06
JP2001108055 2001-04-06
JP108055/2001 2001-04-06
JP175984/2001 2001-06-11
JP2001175984A JP4290349B2 (ja) 2000-06-12 2001-06-11 半導体装置の製造方法
JP175984/01 2001-06-11

Publications (2)

Publication Number Publication Date
CN1338770A CN1338770A (zh) 2002-03-06
CN1218367C true CN1218367C (zh) 2005-09-07

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CN011410027A Expired - Fee Related CN1218367C (zh) 2000-06-12 2001-06-12 薄膜半导体器件的制造方法

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JP (1) JP4290349B2 (https=)
CN (1) CN1218367C (https=)
TW (1) TW521434B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102681288A (zh) * 2012-05-23 2012-09-19 上海交通大学 一种硅基光学限幅器

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4717385B2 (ja) 2003-08-27 2011-07-06 三菱電機株式会社 半導体装置
JP2005236130A (ja) * 2004-02-20 2005-09-02 Hitachi Cable Ltd 半導体装置の製造方法
JP4660103B2 (ja) * 2004-03-09 2011-03-30 三菱電機株式会社 レーザ熱処理方法
JP2006049696A (ja) 2004-08-06 2006-02-16 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
CN100433242C (zh) * 2004-10-10 2008-11-12 友达光电股份有限公司 制作低温多晶硅薄膜的方法
JP4935059B2 (ja) * 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
JP2007035812A (ja) * 2005-07-26 2007-02-08 Mitsubishi Electric Corp 多結晶シリコン膜の製造方法および薄膜トランジスタ
JP5133548B2 (ja) * 2006-09-29 2013-01-30 富士フイルム株式会社 レーザアニール方法およびそれを用いたレーザアニール装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5574312B2 (ja) * 2008-03-25 2014-08-20 国立大学法人山口大学 多結晶シリコン結晶粒界改質方法及び装置
CN113754288B (zh) * 2021-09-08 2023-01-03 深圳爱尔创口腔技术有限公司 通过离子交换增强的荧光硅酸锂玻璃陶瓷及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPH0688979A (ja) * 1992-09-08 1994-03-29 Sumitomo Cement Co Ltd Ｑスイッチ・第２高調波発生複合素子
JPH0864526A (ja) * 1994-08-24 1996-03-08 Sony Corp 光照射による材料の改質方法および半導体装置の製造方法
JPH1084155A (ja) * 1996-09-06 1998-03-31 Ricoh Co Ltd 固体レーザ装置
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3707287B2 (ja) * 1998-09-03 2005-10-19 セイコーエプソン株式会社 半導体装置の製造方法
JP4841740B2 (ja) * 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102681288A (zh) * 2012-05-23 2012-09-19 上海交通大学 一种硅基光学限幅器
CN102681288B (zh) * 2012-05-23 2015-03-25 上海交通大学 一种硅基光学限幅器

Also Published As

Publication number Publication date
JP4290349B2 (ja) 2009-07-01
JP2002367904A (ja) 2002-12-20
TW521434B (en) 2003-02-21
CN1338770A (zh) 2002-03-06

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