CN1215533C - 形成抗蚀图的方法 - Google Patents
形成抗蚀图的方法 Download PDFInfo
- Publication number
- CN1215533C CN1215533C CNB031083188A CN03108318A CN1215533C CN 1215533 C CN1215533 C CN 1215533C CN B031083188 A CNB031083188 A CN B031083188A CN 03108318 A CN03108318 A CN 03108318A CN 1215533 C CN1215533 C CN 1215533C
- Authority
- CN
- China
- Prior art keywords
- resist pattern
- area
- initial
- wettable
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 149
- 239000003960 organic solvent Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 44
- 230000001105 regulatory effect Effects 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 239000002904 solvent Substances 0.000 claims description 27
- 238000009832 plasma treatment Methods 0.000 claims description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- 230000008595 infiltration Effects 0.000 claims description 6
- 238000001764 infiltration Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 64
- 238000005530 etching Methods 0.000 abstract description 21
- 230000004048 modification Effects 0.000 abstract description 2
- 238000012986 modification Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 19
- 238000005260 corrosion Methods 0.000 description 19
- 238000004381 surface treatment Methods 0.000 description 13
- 238000012937 correction Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical class COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 150000004040 pyrrolidinones Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical class CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical class CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002087297A JP3976598B2 (ja) | 2002-03-27 | 2002-03-27 | レジスト・パターン形成方法 |
JP087297/2002 | 2002-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1447387A CN1447387A (zh) | 2003-10-08 |
CN1215533C true CN1215533C (zh) | 2005-08-17 |
Family
ID=28449365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031083188A Expired - Fee Related CN1215533C (zh) | 2002-03-27 | 2003-03-27 | 形成抗蚀图的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6872512B2 (zh) |
JP (1) | JP3976598B2 (zh) |
CN (1) | CN1215533C (zh) |
TW (1) | TWI220765B (zh) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100445707B1 (ko) * | 2002-07-06 | 2004-08-21 | 삼성전자주식회사 | 반도체 장치의 평탄막 형성방법 |
AU2003286758A1 (en) | 2003-07-17 | 2005-03-07 | Honeywell International Inc | Planarization films for advanced microelectronic applications and devices and methods of production thereof |
EP1665394A4 (en) * | 2003-09-09 | 2006-12-13 | Csg Solar Ag | REFLECTING MASK SETTING |
JP2007505487A (ja) * | 2003-09-09 | 2007-03-08 | シーエスジー ソーラー アクチェンゲゼルシャフト | 有機樹脂材料に開口部を形成する方法の改良 |
US20050218113A1 (en) * | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method and system for adjusting a chemical oxide removal process using partial pressure |
JP4524744B2 (ja) * | 2004-04-14 | 2010-08-18 | 日本電気株式会社 | 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法 |
JP4325802B2 (ja) | 2004-08-02 | 2009-09-02 | Nec液晶テクノロジー株式会社 | Tftアレイパターン形成方法 |
JP4314190B2 (ja) * | 2004-12-28 | 2009-08-12 | Nec液晶テクノロジー株式会社 | エッチング方法及びこれを使用したコンタクトホールの形成方法 |
US7166533B2 (en) * | 2005-04-08 | 2007-01-23 | Infineon Technologies, Ag | Phase change memory cell defined by a pattern shrink material process |
JP2007273827A (ja) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | リフロー方法、パターン形成方法および液晶表示装置用tft素子の製造方法 |
JP4451412B2 (ja) * | 2006-03-31 | 2010-04-14 | 東京エレクトロン株式会社 | リフロー方法、パターン形成方法および液晶表示装置用tft素子の製造方法 |
JP2007273826A (ja) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | リフロー方法、パターン形成方法および液晶表示装置用tft素子の製造方法 |
JP5145654B2 (ja) * | 2006-05-29 | 2013-02-20 | 日本電気株式会社 | 基板処理装置及び基板処理方法 |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP2008117965A (ja) * | 2006-11-06 | 2008-05-22 | Tokyo Electron Ltd | リフロー方法、パターン形成方法およびtftの製造方法 |
JP2008117964A (ja) * | 2006-11-06 | 2008-05-22 | Tokyo Electron Ltd | リフロー方法、パターン形成方法およびtftの製造方法 |
AU2008210253A1 (en) * | 2007-01-31 | 2008-08-07 | Newsouth Innovations Pty Limited | Method of forming openings in selected material |
JP5162952B2 (ja) * | 2007-04-26 | 2013-03-13 | 日本電気株式会社 | 液晶表示装置用反射板の製造方法、液晶表示装置及び液晶表示装置用アレイ基板 |
US20080292991A1 (en) * | 2007-05-24 | 2008-11-27 | Advanced Micro Devices, Inc. | High fidelity multiple resist patterning |
JP4375466B2 (ja) * | 2007-09-21 | 2009-12-02 | セイコーエプソン株式会社 | 導電ポスト形成方法、多層配線基板の製造方法及び電子機器の製造方法 |
US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
US8409457B2 (en) * | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
US8617799B2 (en) * | 2008-09-22 | 2013-12-31 | Api Technologies Corp. | Post arrays and methods of making the same |
US8039399B2 (en) * | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
US8796155B2 (en) * | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
US8247302B2 (en) * | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
US8273634B2 (en) | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
US8268543B2 (en) * | 2009-03-23 | 2012-09-18 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9330934B2 (en) * | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US8758987B2 (en) | 2009-09-02 | 2014-06-24 | Micron Technology, Inc. | Methods of forming a reversed pattern in a substrate |
WO2011061976A1 (ja) * | 2009-11-20 | 2011-05-26 | シャープ株式会社 | アレイ基板、その製造方法及び表示装置 |
JP2010056569A (ja) * | 2009-11-30 | 2010-03-11 | Tokyo Electron Ltd | リフロー方法、パターン形成方法および液晶表示装置用tft素子の製造方法 |
US20110129991A1 (en) * | 2009-12-02 | 2011-06-02 | Kyle Armstrong | Methods Of Patterning Materials, And Methods Of Forming Memory Cells |
JP2010103551A (ja) * | 2009-12-17 | 2010-05-06 | Tokyo Electron Ltd | 基板処理装置 |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US10879078B2 (en) * | 2018-09-27 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of patterning resist layer and method of forming semiconductor structure using patterned resist layer |
JP6307764B2 (ja) * | 2013-09-30 | 2018-04-11 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4022932A (en) * | 1975-06-09 | 1977-05-10 | International Business Machines Corporation | Resist reflow method for making submicron patterned resist masks |
US5133840A (en) * | 1990-05-15 | 1992-07-28 | International Business Machines Corporation | Surface midification of a polyimide |
JP4003273B2 (ja) * | 1998-01-19 | 2007-11-07 | セイコーエプソン株式会社 | パターン形成方法および基板製造装置 |
US7771630B2 (en) * | 2000-02-24 | 2010-08-10 | The Regents Of The University Of California | Precise fabrication of polymer microlens arrays |
-
2002
- 2002-03-27 JP JP2002087297A patent/JP3976598B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-17 TW TW092105780A patent/TWI220765B/zh not_active IP Right Cessation
- 2003-03-27 US US10/400,860 patent/US6872512B2/en not_active Expired - Fee Related
- 2003-03-27 CN CNB031083188A patent/CN1215533C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030186170A1 (en) | 2003-10-02 |
US6872512B2 (en) | 2005-03-29 |
TW200400541A (en) | 2004-01-01 |
JP3976598B2 (ja) | 2007-09-19 |
TWI220765B (en) | 2004-09-01 |
CN1447387A (zh) | 2003-10-08 |
JP2003282422A (ja) | 2003-10-03 |
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