CN1208495C - 溅射靶及其制备方法 - Google Patents

溅射靶及其制备方法 Download PDF

Info

Publication number
CN1208495C
CN1208495C CNB971925933A CN97192593A CN1208495C CN 1208495 C CN1208495 C CN 1208495C CN B971925933 A CNB971925933 A CN B971925933A CN 97192593 A CN97192593 A CN 97192593A CN 1208495 C CN1208495 C CN 1208495C
Authority
CN
China
Prior art keywords
titanium dioxide
target
plasma spraying
sputtering target
tio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971925933A
Other languages
English (en)
Other versions
CN1212026A (zh
Inventor
J·E·M·范德尔斯特雷藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
bvba VANDERSTRAETEN E
Vanderstraeten E bvba
Original Assignee
bvba VANDERSTRAETEN E
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10786662&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1208495(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by bvba VANDERSTRAETEN E filed Critical bvba VANDERSTRAETEN E
Publication of CN1212026A publication Critical patent/CN1212026A/zh
Application granted granted Critical
Publication of CN1208495C publication Critical patent/CN1208495C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2456Coating containing TiO2
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134Plasma spraying
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/212TiO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/154Deposition methods from the vapour phase by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Surface Treatment Of Glass (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

一种制备溅射靶的方法,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,电导率小于0.5ohm.cm,还可以与二氧化铌混合,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,还可以是喷涂与氧化铌的混合物,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上。

Description

溅射靶及其制备方法
本发明涉及一种改进的高速溅射靶的制备方法,尤其涉及一种具有高电导率的含有亚化学计量二氧化钛的,用于大功率D.C.溅射的溅射靶的制备方法。
通常用各种氧化物(如二氧化硅)和氮化物(如氮化硅)的溅射涂层在多种衬底上形成具有重要特性的光学涂层。已知这种光学涂层的应用场合包括玻璃窗上的低辐射率膜,反射镜上的冷反射镜,镜框玻璃或TV屏幕上照相版和防反射涂层的增强镜。通常这些涂层都是由几种不同反射指数的不同涂层叠加而成,优选地将高低反射指数的涂层相结合,生产滤光片。对于防反射涂层,优选地将可能呈现最高和最低反射指数的两种材料相结合。这种材料是二氧化钛和二氧化硅。这些材料的另一个优点是耐用性强。对玻璃窗上的低辐射率膜来说,优选地将银涂层与一种高反射指数的材料相结合,以减少银层的反射,改进光的透射。
二氧化钛涂层具有很高的反射指数,由此它能用于提供高反射指数的涂层,或者为光学叠加层提供高反射指数的涂层。生产二氧化钛涂层的现有工艺包括使用钛金属作为溅射靶,使用氧气作为等离子气体中的一个组分。由此在溅射过程中将钛转变成二氧化钛。尽管这种工艺能够生产出满意的二氧化钛涂层,但是沉积速率非常低,比用氧化锌和/或氧化锡涂覆的速率低得多。
作为二氧化钛的代用材料,建议使用另一种材料如氧化铌。尽管可以使用铌金属靶,以稍高于采用钛的等同方法的速率在衬底上涂布氧化铌,但铌非常昂贵。
JP-A-07-233469描述了一种通过在非氧化气氛中以热压二氧化钛粉末,并将压制品烧结成块来制备溅射靶的方法。烧结后的压制品含有TiOx,其中1<x<2,电阻率为10ohm.cm,它对大功率的D.C溅射来说太高了。而溅射过程的稳定性和电弧速率两者都极大地取决于靶的电导率,尤其是在大功率下。
JP-A-62-161945描述了一种生产陶瓷溅射靶的方法,其中采用水等离子体喷涂主要含有ZrO2、TiO2、SiO2、Ta2O3、Al2O3、Fe2O3或这些材料混合物的陶瓷材料,以生产一种可用作溅射靶的成形体。该溅射靶用于非导电靶材料的高频率溅射。
因此,需要一种改进的含有亚化学计量TiO2的溅射靶的制备方法,该方法不包括JP-A-07-233469的热压和烧结步骤,能够生产出电导率足够高的可用作大功率下复杂形状的大型靶。
目前,我们意外地发现,可在大功率下从含有亚化学计量二氧化钛的靶可以D.C.溅射二氧化钛,在衬底上提供一种亚化学计量或化学计量的涂层。
因此,本发明提供了一种制备溅射靶的方法,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,电阻率小于0.5ohm.cm,还可以与氧化铌混合,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,还可以是喷涂与氧化铌的混合物,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上。
亚化学计量的二氧化钛TiOx,其中x小于2,在已有技术领域,已知x通常从1.55到1.95。当根据本发明的方法生产溅射靶时,电导率将会改变,这取决于化学计量,最优选的电阻率为0.02ohm.cm。
在实施本发明方法时,将二氧化钛TiO2以等离子溅射在靶基底上,如衬管或衬板,例如导电材料的靶基底,如不锈钢或钛金属、铝或铜。靶可以是任何一种已有技术公知类型的靶,例如转动靶或平面磁控靶。
在等离子喷涂过程中,等离子火焰对二氧化钛作用,使二氧化钛从其晶格失去一些氧原子,优选地从其颗粒表面失去氧原子。二氧化钛被转变成亚化学计量形式,即偏离化学计量的缺氧的二氧化钛。用于等离子喷涂的主要等离子气体最好是氩气,可用氢气作次要等离子气体,以便使颗粒温度达到最高。经等离子喷涂的二氧化钛最好其粒径在1-60微米的范围内,优选地从1微米到20微米。在防止亚化学计量的二氧化钛再获取氧转以再变成TiO2的条件下,对涂覆在靶基底上的亚化学计量的二氧化钛进行固化。优选地在等离子喷涂过程中,对靶基底进行水冷却,以便使呈亚化学计量的二氧化钛骤冷,并改进其电导率。为了生产出高温等离子体和有助于还原,至关重要的是在等离子气体中使用一定量的氢气或氮气。由于氢具有还原能力,所以优选地使用氢。优选地使用高于2000℃的颗粒温度,更优选的是2500℃。
在本发明的一特殊实施例中,可将二氧化钛与氧化铌一起以等离子喷涂。
另一方面,本发明还提供一种制备亚化学计量二氧化钛TiOx的方法,其中x小于2,电阻率小于0.1ohm.cm,该方法包括在缺氧和不含含氧化合物的气氛中,对二氧化钛进行等离子处理。在实施该方法时,优选地通过等离子火焰喷涂二氧化钛,例如采用氩气和氢气的混合物作为等离子气体的等离子火焰。优选地等离子火焰在高温下操纵,以将颗粒的温度升高到2000℃以上。
根据本发明方法生产的溅射靶具有很高的电导率,无需昂贵的电弧折流器、或D.C.开关式电源、或其中用中等频率电源将两个靶连续用作阳极和阴极的Twin-mag系统、或任何气体控制系统特殊要求,就可采用传统的D.C.电源,在大功率下运行。采用本发明方法生产的靶,可在高达100Kw的功率下进行D.C.溅射。主要结论是在如长3.5m、直径150mm的可转动的大型靶基底上可涂覆厚达6mm的涂层。
由于二氧化钛的熔点比金属钛高,所以用本发明方法生产的靶不会有明显的电弧问题,所谓的“蒸汽电弧”问题是由于金属的熔点较低而引起的。即使对二氧化钛出现一些电弧,对靶几乎无损害。
下面参照实施例对本发明进行进一步描述。
实施例1
一个在内部水冷到35℃的可转动的靶,包括一个直径为133mm、长为800mm的不锈钢管,采用氩气作为主等离子气体,氢气作为次等离子气体,如上所述通过等离子喷涂粒径为10-40μm的二氧化钛(金红石),在靶上涂覆厚度为4-10mm的亚化学计量的二氧化钛TiOx,其中x小于2。使用了72升气体(60%氩,40%氢)。功率是45Kw(455A,96V)。
实施例2
使用市场有售的呈锐钛矿晶体形式的含有二氧化钛的白颜料。这种粉末是化学计量的并且是电绝缘的。将粉末机械成团并压成薄片,经研磨、筛分(70-100μm)并在空气中于1300℃下烧结。然后将烧结体进行研磨,并筛分成粒径为10-40μm的颗粒。颗粒是具有金红石晶体结构的黄的化学计量的不导电的二氧化钛。
用氩气作为主等离子气,氢气作为次等离子气,通过等离子喷涂上述金红石粉末,以制备由铝衬管(长2.50m,直径133mm)构成的可转动的靶。使用了75升气体(40%氩,60%氢)。功率是50Kw(110V,455A)。在氮气气氛下进行等离子喷涂。
靶以100rpm的转速转动,喷管移动速度是2.5m/min,直到涂层为4mm厚。铝管的内侧用水冷却到35℃的温度。涂覆后靶的电阻率为0.07ohm.cm。接着在高达100Kw的功率下,对靶进行试验,在溅射设备中靶运行状况良好,没有明显的电弧产生。其二氧化钛的沉积速率比用反应气体溅涂金属钛靶的沉积速率高6倍。
实施例3
在200mBar的压力下,使用粒径为1-10μm的呈锐钛矿类型的二氧化钛,用低压真空等离子体重复实施例2。采用低压等离子体,可使用较小粒径的粉末。
在实施例2的条件下,在靶基底上进行喷涂,锐钛矿被转化成亚化学计量的金红石类型的二氧化钛。涂覆后的靶的电阻率为0.02ohm.cm。
实施例4
对粒径为0.1-2μm的氧化铌(重量占25份)和二氧化钛(重量占75份)的混合物进行成团和压实,干燥后在空气中于1300℃的温度下进行烧结。然后将烧结体研磨成粒径为10-40μm的颗粒。
然后在实施例2给定的条件下,在铝衬管上,将粉末混合物以等离子喷涂成4mm的涂层。涂覆后的靶的电阻率为0.5ohm.cm,因此可用作D.C.溅射靶。

Claims (10)

1、一种制备溅射靶的方法,该靶含有亚化学计量的二氧化钛TiOx,其中x小于2,其电阻率小于0.5ohm.cm,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上,其中使用氩气作为等离子气体,氢气作为次等离子气体进行等离子喷涂,并且进行等离子喷涂的二氧化钛的粒径在1-60微米的范围内。
2、权利要求1的方法,其特征在于,在等离子喷涂过程中,对靶基底进行水冷却。
3、权利要求1的方法,其特征在于,靶基底是钛、不锈钢、铝或铜。
4、权利要求3的方法,其特征在于,靶基底是可转动的靶或平面磁控靶。
5.权利要求1的方法,其特征在于,与氧化铌一起等离子喷涂二氧化钛以便形成含有亚化学计量的二氧化钛和氧化铌的溅射靶。
6、权利要求1的方法,其特征在于,亚化学计量的二氧化钛TiOx的x值在1.55到1.95的范围内。
7、权利要求1的方法,其特征在于,溅射靶的电阻率为0.02ohm.cm。
8、一种溅射靶,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,其电阻率小于0.5ohm.cm,该溅射靶是通过下列方法得到的,在缺氧和不含含氧化合物的气氛中,在靶基底上等离子喷涂二氧化钛TiO2,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上,其中使用氩气作为等离子气体,氢气作为次等离子气体进行等离子喷涂,并且进行等离子喷涂的二氧化钛的粒径在1-60微米的范围内。
9、权利要求8的溅射靶,其特征在于,其电阻率为0.02ohm.cm。
10.权利要求8的溅射靶,其特征在于,与氧化铌一起等离子喷涂二氧化钛以便形成含有亚化学计量的二氧化钛和氧化铌的溅射靶。
CNB971925933A 1996-01-05 1997-01-03 溅射靶及其制备方法 Expired - Fee Related CN1208495C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9600210.0A GB9600210D0 (en) 1996-01-05 1996-01-05 Improved sputtering targets and method for the preparation thereof
GB9600210.0 1996-01-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100713029A Division CN1727514A (zh) 1996-01-05 1997-01-03 溅射靶及其制备方法

Publications (2)

Publication Number Publication Date
CN1212026A CN1212026A (zh) 1999-03-24
CN1208495C true CN1208495C (zh) 2005-06-29

Family

ID=10786662

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB971925933A Expired - Fee Related CN1208495C (zh) 1996-01-05 1997-01-03 溅射靶及其制备方法
CNA2005100713029A Pending CN1727514A (zh) 1996-01-05 1997-01-03 溅射靶及其制备方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2005100713029A Pending CN1727514A (zh) 1996-01-05 1997-01-03 溅射靶及其制备方法

Country Status (12)

Country Link
US (11) US6461686B1 (zh)
EP (2) EP0871794B1 (zh)
JP (3) JP4087447B2 (zh)
KR (1) KR100510609B1 (zh)
CN (2) CN1208495C (zh)
AU (2) AU716603B2 (zh)
BR (1) BR9706954A (zh)
CA (1) CA2241878C (zh)
DE (2) DE69715592T2 (zh)
GB (1) GB9600210D0 (zh)
IL (1) IL125103A0 (zh)
WO (2) WO1997025451A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105102666A (zh) * 2012-11-14 2015-11-25 贺利氏德国有限责任两合公司 具有优化使用特性的溅射靶

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997008359A1 (fr) 1995-08-23 1997-03-06 Asahi Glass Company Ltd. Cible, son procede de production et procede de formation d'une couche tres refringente
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
US6262850B1 (en) 1998-11-03 2001-07-17 Cardinal Glass Industries, Inc. Heat-treatable dichroic mirrors
US6292302B1 (en) * 1998-11-03 2001-09-18 Cardinal Glass Industries, Inc. Heat-treatable dichroic mirrors
ATE244691T1 (de) 1998-12-21 2003-07-15 Cardinal Cg Co Verfahren zur beschichtung von beiden seiten eines glassubstrats
DE29923888U1 (de) 1999-12-03 2001-06-21 Zentrum für Material- und Umwelttechnik GmbH, 09599 Freiberg Schichtverbund für die Dünnbeschichtung großflächiger Substrate
DE19958424C2 (de) * 1999-12-03 2002-05-29 Zentrum Fuer Material Und Umwe Zerstäubungstarget für die Dünnbeschichtung großflächiger Substrate und Verfahren zu seiner Herstellung
CN1158403C (zh) * 1999-12-23 2004-07-21 西南交通大学 一种人工器官表面改性方法
AU2001241144A1 (en) 2000-03-22 2001-10-03 Nippon Sheet Glass Co. Ltd. Substrate with photocatalytic film and method for producing the same
JP3708429B2 (ja) * 2000-11-30 2005-10-19 Hoya株式会社 蒸着組成物の製造方法、蒸着組成物及び反射防止膜を有する光学部品の製造方法
AU2002250831A1 (en) * 2001-01-17 2002-07-30 N.V. Bekaert S.A. Method for the production of sputtering targets
DE10140514A1 (de) 2001-08-17 2003-02-27 Heraeus Gmbh W C Sputtertarget auf Basis von Titandioxid
WO2003034106A1 (fr) * 2001-10-18 2003-04-24 Bridgestone Corporation Element optique et procede de production de cet element, filtre passe bande, filtre de coupure des ondes proche infrarouge et film anti-reflexion
US20040115362A1 (en) * 2002-01-14 2004-06-17 Klause Hartig Photocatalytic sputtering targets and methods for the production and use thereof
US7063893B2 (en) 2002-04-29 2006-06-20 Cardinal Cg Company Low-emissivity coating having low solar reflectance
KR20020077852A (ko) * 2002-08-30 2002-10-14 주식회사 새롬원 김서림방지용 유리판
US20070141857A1 (en) * 2002-10-24 2007-06-21 Strothers Susan D Target designs and related methods for enhanced cooling and reduced deflection and deformation
US20040149307A1 (en) * 2002-12-18 2004-08-05 Klaus Hartig Reversible self-cleaning window assemblies and methods of use thereof
DE10320472A1 (de) * 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
US6915095B2 (en) * 2003-06-16 2005-07-05 Xerox Corporation Charging member having titanium oxide outer coating on grit blasted substrate
WO2005035822A1 (en) * 2003-10-07 2005-04-21 Deposition Sciences, Inc. Apparatus and process for high rate deposition of rutile titanium dioxide
DE10359508B4 (de) * 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Magnetronsputtern
EP1713736B1 (en) * 2003-12-22 2016-04-27 Cardinal CG Company Graded photocatalytic coatings and methods of making such coatings
CA2556730C (en) 2004-02-25 2013-12-24 Afg Industries, Inc. Heat stabilized sub-stoichiometric dielectrics
JPWO2005100013A1 (ja) * 2004-04-06 2008-03-06 帝人デュポンフィルム株式会社 反射防止フィルム
WO2006001138A1 (ja) * 2004-06-29 2006-01-05 Pioneer Corporation 薄膜形成用スパッタリングターゲット、誘電体薄膜、光ディスク及びその製造方法
DE102004032635A1 (de) * 2004-07-06 2006-02-09 Gfe Metalle Und Materialien Gmbh Verfahren zur Herstellung eines Titan-Suboxid-basierten Beschichtungswerkstoff, entsprechend hergestellter Beschichtungswerkstoff und damit versehenes Sputtertarget
JP2008505842A (ja) 2004-07-12 2008-02-28 日本板硝子株式会社 低保守コーティング
CA2575586A1 (en) * 2004-08-10 2006-02-23 Cardinal Cg Company Lcd mirror system and method
CA2583174A1 (en) * 2004-10-04 2006-04-20 Cardinal Cg Company Thin film coating and temporary protection technology, insulating glazing units, and associated methods
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7968216B2 (en) * 2005-01-08 2011-06-28 Toyoda Gosei Co., Ltd. Internal gear pump
US7442933B2 (en) * 2005-02-03 2008-10-28 Lin Alice L Bolometer having an amorphous titanium oxide layer with high resistance stability
FR2881757B1 (fr) * 2005-02-08 2007-03-30 Saint Gobain Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium
US8053048B2 (en) * 2005-04-25 2011-11-08 Baxter International Inc. Overpouch film and container and method of making same
DE102005029952B3 (de) * 2005-06-28 2007-01-11 Lanxess Deutschland Gmbh Niveauausgleichslasche
US7342716B2 (en) 2005-10-11 2008-03-11 Cardinal Cg Company Multiple cavity low-emissivity coatings
WO2007053586A2 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
WO2007121215A1 (en) 2006-04-11 2007-10-25 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
DE102006027029B4 (de) * 2006-06-09 2010-09-30 W.C. Heraeus Gmbh Sputtertarget mit einem Sputtermaterial auf Basis TiO2 sowie Herstellverfahren
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
JP2010513175A (ja) * 2006-06-30 2010-04-30 カーディナル・シージー・カンパニー カーボンナノチューブグレージング技術
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
CN101548582B (zh) * 2006-11-17 2012-11-14 法国圣-戈班玻璃公司 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置
US7807248B2 (en) * 2007-08-14 2010-10-05 Cardinal Cg Company Solar control low-emissivity coatings
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
WO2009036263A2 (en) 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coating technology
US7655274B2 (en) 2007-11-05 2010-02-02 Guardian Industries Corp. Combustion deposition using aqueous precursor solutions to deposit titanium dioxide coatings
JP4993745B2 (ja) * 2007-12-28 2012-08-08 株式会社アルバック 成膜装置
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US20130026535A1 (en) * 2011-07-26 2013-01-31 Battelle Energy Alliance, Llc Formation of integral composite photon absorber layer useful for photoactive devices and sensors
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
EP2116631A1 (en) * 2008-04-30 2009-11-11 Applied Materials, Inc. Sputter target
US20090272641A1 (en) * 2008-04-30 2009-11-05 Applied Materials, Inc. Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell
JP5624712B2 (ja) * 2008-09-01 2014-11-12 豊田合成株式会社 TiO2からなる導電性透明層の製造方法及び当該導電性透明層の製造方法を利用した半導体発光素子の製造方法
JP2010231172A (ja) * 2009-03-04 2010-10-14 Seiko Epson Corp 光学物品およびその製造方法
FR2944293B1 (fr) * 2009-04-10 2012-05-18 Saint Gobain Coating Solutions Procede d'elaboration par projection thermique d'une cible
JP5588135B2 (ja) * 2009-08-10 2014-09-10 ホーヤ レンズ マニュファクチャリング フィリピン インク 光学物品の製造方法
JP2012032690A (ja) 2010-08-02 2012-02-16 Seiko Epson Corp 光学物品およびその製造方法
DE102010048089B4 (de) * 2010-10-01 2016-09-01 Carl Zeiss Vision International Gmbh Verfahren zur Erzeugung einer mehrere Schichten aufweisenden antistatischen Beschichtung für ein Linsenelement
EP2723915A1 (en) 2011-06-27 2014-04-30 Soleras Ltd. Sputtering target
CN102286717B (zh) * 2011-09-01 2013-07-03 基迈克材料科技(苏州)有限公司 以等离子喷涂制备圆柱形大面积镀膜靶材及方法
DE102011116062A1 (de) * 2011-10-18 2013-04-18 Sintertechnik Gmbh Keramisches Erzeugnis zur Verwendung als Target
EP2613358A2 (en) * 2012-01-04 2013-07-10 OC Oerlikon Balzers AG Double layer antireflection coating for silicon based solar cell modules
DE102012112739A1 (de) * 2012-10-23 2014-04-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Licht absorbierendes Schichtsystem und dessen Herstellung sowie dafür geeignetes Sputtertarget
PL2953915T3 (pl) 2013-02-05 2017-07-31 Soleras Advanced Coatings Bvba Tarcze z tlenku (Ga) Zn Sn do rozpylania jonowego
RU2013158730A (ru) * 2013-12-27 2015-07-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный аэрокосмический университет имени академика С.П. Королева" (национальный исследовательский университет)" (СГАУ) Способ изготовления катодной мишени для распыления керамических материалов
JP5784849B2 (ja) * 2015-01-21 2015-09-24 三井金属鉱業株式会社 セラミックス円筒形スパッタリングターゲット材およびその製造方法
EP3541762B1 (en) 2016-11-17 2022-03-02 Cardinal CG Company Static-dissipative coating technology
EP3375904B1 (en) 2017-03-14 2022-05-04 Materion Advanced Materials Germany GmbH Cylindrical titanium oxide sputtering target and process for manufacturing the same
DE102017118172A1 (de) * 2017-08-09 2019-02-14 Forplan AG Beschichtungsverfahren, Beschichtungsvorrichtung zur Durchführung dieses Verfahrens und Beschichtungsanlage mit einer solchen Beschichtungsvorrichtung
CN110257790B (zh) * 2019-07-29 2020-07-03 福建阿石创新材料股份有限公司 一种三氧化二铝-TiOx靶材及其制备方法和应用
KR20240089692A (ko) * 2021-12-01 2024-06-20 컨템포러리 엠퍼렉스 테크놀로지 씨오., 리미티드 도핑된 산화니켈 타겟재 및 그 제조방법과 용도

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US232680A (en) 1880-09-28 Peters
US1231280A (en) 1916-11-16 1917-06-26 John F Metten Safety-valve.
US1438462A (en) 1919-04-17 1922-12-12 Skf Svenska Kullagerfab Ab Shock indicator
US1595061A (en) 1922-10-17 1926-08-03 Valerius Johann Electric cut-out
GB232680A (en) 1924-01-23 1925-04-23 Metal & Thermit Corp Improvements in the production of a form of titanium oxide
US3616445A (en) 1967-12-14 1971-10-26 Electronor Corp Titanium or tantalum base electrodes with applied titanium or tantalum oxide face activated with noble metals or noble metal oxides
DE2300422C3 (de) * 1973-01-05 1981-10-15 Hoechst Ag, 6000 Frankfurt Verfahren zur Herstellung einer Elektrode
DE2405010C3 (de) 1974-02-02 1982-08-05 Sigri Elektrographit Gmbh, 8901 Meitingen Sinter-Elektrode für elektrochemische Prozesse und Verfahren zum Herstellen der Elektrode
GB1595061A (en) * 1976-11-22 1981-08-05 Atomic Energy Authority Uk Electrically conductive layers produced by plasma spraying
DE2752875C2 (de) 1977-11-26 1986-05-15 Sigri GmbH, 8901 Meitingen Elektrode für elektrochemische Prozesse und Verfahren zu deren Herstellung
GB2028376B (en) 1978-08-23 1982-11-03 Ppg Industries Inc Electrically conductive coatings
US4216259A (en) 1979-01-02 1980-08-05 Bfg Glassgroup Heat reflecting pane and a method of producing it
US4422917A (en) * 1980-09-10 1983-12-27 Imi Marston Limited Electrode material, electrode and electrochemical cell
DE3039821A1 (de) * 1980-10-22 1982-06-03 Robert Bosch Gmbh, 7000 Stuttgart Mehrschichtsystem fuer waermeschutzanwendung
US4336119A (en) 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US5126218A (en) 1985-04-23 1992-06-30 Clarke Robert L Conductive ceramic substrate for batteries
JPS62161945A (ja) 1985-08-20 1987-07-17 Toyo Soda Mfg Co Ltd セラミックス系スパッタリングタ−ゲットの製造法
JPS63178474A (ja) 1987-01-19 1988-07-22 日立金属株式会社 長波長赤外線を放射する発熱体
US4931213A (en) 1987-01-23 1990-06-05 Cass Richard B Electrically-conductive titanium suboxides
JPH0812302B2 (ja) * 1987-11-02 1996-02-07 株式会社日立製作所 チタン酸化物薄膜の製造方法
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US4861680A (en) 1988-02-11 1989-08-29 Southwall Technologies Bronze-grey glazing film and window made therefrom
US5605609A (en) 1988-03-03 1997-02-25 Asahi Glass Company Ltd. Method for forming low refractive index film comprising silicon dioxide
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
US5105310A (en) 1990-10-11 1992-04-14 Viratec Thin Films, Inc. Dc reactively sputtered antireflection coatings
US5100527A (en) * 1990-10-18 1992-03-31 Viratec Thin Films, Inc. Rotating magnetron incorporating a removable cathode
US5616263A (en) * 1992-11-09 1997-04-01 American Roller Company Ceramic heater roller
US5589280A (en) 1993-02-05 1996-12-31 Southwall Technologies Inc. Metal on plastic films with adhesion-promoting layer
US5489369A (en) 1993-10-25 1996-02-06 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
GB9324069D0 (en) 1993-11-23 1994-01-12 Glaverbel A glazing unit and a method for its manufacture
US5451457A (en) 1993-12-20 1995-09-19 Libbey-Owens-Ford Co. Method and material for protecting glass surfaces
JPH07215074A (ja) 1994-02-07 1995-08-15 Toyota Motor Corp 車両用アンダーカバー装置
JP3836163B2 (ja) 1994-02-22 2006-10-18 旭硝子セラミックス株式会社 高屈折率膜の形成方法
US5616225A (en) 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
JPH08134638A (ja) 1994-11-04 1996-05-28 Asahi Glass Co Ltd チタン酸化物膜の成膜方法
US5593786A (en) 1994-11-09 1997-01-14 Libbey-Owens-Ford Company Self-adhering polyvinyl chloride safety glass interlayer
DE4441206C2 (de) 1994-11-19 1996-09-26 Leybold Ag Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen
US5574079A (en) 1994-12-21 1996-11-12 Union Carbide Chemicals & Plastics Technology Corporation Method for the preparation of water-borne coating compositions using thermoplastic polyhydroxyether resins having narrow polydispersity
ES2124048T3 (es) 1995-07-08 1999-01-16 Leybold Ag Sistema catodico para un dispositivo de pulverizacion sobre un objeto.
US6455141B1 (en) 1995-07-24 2002-09-24 Southwall Technologies Inc. Laminate structure and process for its production
US5743931A (en) 1995-08-14 1998-04-28 Libbey-Owens-Ford Co. Glass sheet conveying and bending apparatus
WO1997008359A1 (fr) * 1995-08-23 1997-03-06 Asahi Glass Company Ltd. Cible, son procede de production et procede de formation d'une couche tres refringente
JPH09189801A (ja) 1996-01-09 1997-07-22 Shin Etsu Chem Co Ltd 耐熱性反射防止膜付き光学部品
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
WO1997025201A1 (en) 1996-01-11 1997-07-17 Libbey-Owens-Ford Co. Coated glass article having a solar control coating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105102666A (zh) * 2012-11-14 2015-11-25 贺利氏德国有限责任两合公司 具有优化使用特性的溅射靶
CN105102666B (zh) * 2012-11-14 2018-04-24 万腾荣先进材料德国有限责任公司 具有优化使用特性的溅射靶
US9960022B2 (en) 2012-11-14 2018-05-01 Materion Advanced Materials Germany Gmbh Sputtering target with optimized performance characteristics

Also Published As

Publication number Publication date
CN1727514A (zh) 2006-02-01
AU1439097A (en) 1997-08-01
US20020071971A1 (en) 2002-06-13
KR19990076990A (ko) 1999-10-25
JP4087447B2 (ja) 2008-05-21
CA2241878C (en) 2009-07-21
DE69715592D1 (de) 2002-10-24
CN1212026A (zh) 1999-03-24
DE69715592T2 (de) 2003-01-16
EP0871794B1 (en) 2002-09-18
JP2000503070A (ja) 2000-03-14
US6468402B1 (en) 2002-10-22
US20010010288A1 (en) 2001-08-02
EP0871794A1 (en) 1998-10-21
EP0871792A1 (en) 1998-10-21
US20010019738A1 (en) 2001-09-06
AU1310097A (en) 1997-08-01
US20020036135A1 (en) 2002-03-28
DE69723053D1 (de) 2003-07-31
GB9600210D0 (en) 1996-03-06
CA2241878A1 (en) 1997-07-17
BR9706954A (pt) 2000-01-04
US20020081465A1 (en) 2002-06-27
AU716603B2 (en) 2000-03-02
US6461686B1 (en) 2002-10-08
EP0871792B1 (en) 2003-06-25
IL125103A0 (en) 1999-01-26
JP2000515929A (ja) 2000-11-28
US20060249373A1 (en) 2006-11-09
US6511587B2 (en) 2003-01-28
DE69723053T2 (de) 2004-05-19
WO1997025451A1 (en) 1997-07-17
JP3980643B2 (ja) 2007-09-26
WO1997025450A1 (en) 1997-07-17
JP2007314892A (ja) 2007-12-06
US20020125129A1 (en) 2002-09-12
KR100510609B1 (ko) 2005-10-25
US20040069623A1 (en) 2004-04-15
US20020127349A1 (en) 2002-09-12

Similar Documents

Publication Publication Date Title
CN1208495C (zh) 溅射靶及其制备方法
EP0852266B1 (en) Target, process for production thereof, and method of forming highly refractive film
JP3836163B2 (ja) 高屈折率膜の形成方法
US7431808B2 (en) Sputter target based on titanium dioxide
JP3695790B2 (ja) ターゲットとその製造方法および高屈折率膜の形成方法
CN86105893A (zh) 大气常压下涂层的等离子喷涂工艺
JP4121022B2 (ja) ターゲットの製造方法
JPH0726371A (ja) スパッタリング用ターゲットおよび低屈折膜
JPH08283935A (ja) ターゲットおよび該ターゲットによる高屈折率膜の製造方法
JPH0726370A (ja) ターゲットとその製造方法および該ターゲットを用いて形成された膜
MXPA98005470A (en) Scurring objectives and method for the preparation of the mis

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050629

Termination date: 20130103