CN1208495C - 溅射靶及其制备方法 - Google Patents
溅射靶及其制备方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005477 sputtering target Methods 0.000 title claims abstract description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 117
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 52
- 238000007750 plasma spraying Methods 0.000 claims abstract description 20
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 12
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 229910003087 TiOx Inorganic materials 0.000 abstract 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
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- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Coating By Spraying Or Casting (AREA)
- Surface Treatment Of Glass (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
一种制备溅射靶的方法,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,电导率小于0.5ohm.cm,还可以与二氧化铌混合,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,还可以是喷涂与氧化铌的混合物,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上。
Description
本发明涉及一种改进的高速溅射靶的制备方法,尤其涉及一种具有高电导率的含有亚化学计量二氧化钛的,用于大功率D.C.溅射的溅射靶的制备方法。
通常用各种氧化物(如二氧化硅)和氮化物(如氮化硅)的溅射涂层在多种衬底上形成具有重要特性的光学涂层。已知这种光学涂层的应用场合包括玻璃窗上的低辐射率膜,反射镜上的冷反射镜,镜框玻璃或TV屏幕上照相版和防反射涂层的增强镜。通常这些涂层都是由几种不同反射指数的不同涂层叠加而成,优选地将高低反射指数的涂层相结合,生产滤光片。对于防反射涂层,优选地将可能呈现最高和最低反射指数的两种材料相结合。这种材料是二氧化钛和二氧化硅。这些材料的另一个优点是耐用性强。对玻璃窗上的低辐射率膜来说,优选地将银涂层与一种高反射指数的材料相结合,以减少银层的反射,改进光的透射。
二氧化钛涂层具有很高的反射指数,由此它能用于提供高反射指数的涂层,或者为光学叠加层提供高反射指数的涂层。生产二氧化钛涂层的现有工艺包括使用钛金属作为溅射靶,使用氧气作为等离子气体中的一个组分。由此在溅射过程中将钛转变成二氧化钛。尽管这种工艺能够生产出满意的二氧化钛涂层,但是沉积速率非常低,比用氧化锌和/或氧化锡涂覆的速率低得多。
作为二氧化钛的代用材料,建议使用另一种材料如氧化铌。尽管可以使用铌金属靶,以稍高于采用钛的等同方法的速率在衬底上涂布氧化铌,但铌非常昂贵。
JP-A-07-233469描述了一种通过在非氧化气氛中以热压二氧化钛粉末,并将压制品烧结成块来制备溅射靶的方法。烧结后的压制品含有TiOx,其中1<x<2,电阻率为10ohm.cm,它对大功率的D.C溅射来说太高了。而溅射过程的稳定性和电弧速率两者都极大地取决于靶的电导率,尤其是在大功率下。
JP-A-62-161945描述了一种生产陶瓷溅射靶的方法,其中采用水等离子体喷涂主要含有ZrO2、TiO2、SiO2、Ta2O3、Al2O3、Fe2O3或这些材料混合物的陶瓷材料,以生产一种可用作溅射靶的成形体。该溅射靶用于非导电靶材料的高频率溅射。
因此,需要一种改进的含有亚化学计量TiO2的溅射靶的制备方法,该方法不包括JP-A-07-233469的热压和烧结步骤,能够生产出电导率足够高的可用作大功率下复杂形状的大型靶。
目前,我们意外地发现,可在大功率下从含有亚化学计量二氧化钛的靶可以D.C.溅射二氧化钛,在衬底上提供一种亚化学计量或化学计量的涂层。
因此,本发明提供了一种制备溅射靶的方法,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,电阻率小于0.5ohm.cm,还可以与氧化铌混合,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,还可以是喷涂与氧化铌的混合物,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上。
亚化学计量的二氧化钛TiOx,其中x小于2,在已有技术领域,已知x通常从1.55到1.95。当根据本发明的方法生产溅射靶时,电导率将会改变,这取决于化学计量,最优选的电阻率为0.02ohm.cm。
在实施本发明方法时,将二氧化钛TiO2以等离子溅射在靶基底上,如衬管或衬板,例如导电材料的靶基底,如不锈钢或钛金属、铝或铜。靶可以是任何一种已有技术公知类型的靶,例如转动靶或平面磁控靶。
在等离子喷涂过程中,等离子火焰对二氧化钛作用,使二氧化钛从其晶格失去一些氧原子,优选地从其颗粒表面失去氧原子。二氧化钛被转变成亚化学计量形式,即偏离化学计量的缺氧的二氧化钛。用于等离子喷涂的主要等离子气体最好是氩气,可用氢气作次要等离子气体,以便使颗粒温度达到最高。经等离子喷涂的二氧化钛最好其粒径在1-60微米的范围内,优选地从1微米到20微米。在防止亚化学计量的二氧化钛再获取氧转以再变成TiO2的条件下,对涂覆在靶基底上的亚化学计量的二氧化钛进行固化。优选地在等离子喷涂过程中,对靶基底进行水冷却,以便使呈亚化学计量的二氧化钛骤冷,并改进其电导率。为了生产出高温等离子体和有助于还原,至关重要的是在等离子气体中使用一定量的氢气或氮气。由于氢具有还原能力,所以优选地使用氢。优选地使用高于2000℃的颗粒温度,更优选的是2500℃。
在本发明的一特殊实施例中,可将二氧化钛与氧化铌一起以等离子喷涂。
另一方面,本发明还提供一种制备亚化学计量二氧化钛TiOx的方法,其中x小于2,电阻率小于0.1ohm.cm,该方法包括在缺氧和不含含氧化合物的气氛中,对二氧化钛进行等离子处理。在实施该方法时,优选地通过等离子火焰喷涂二氧化钛,例如采用氩气和氢气的混合物作为等离子气体的等离子火焰。优选地等离子火焰在高温下操纵,以将颗粒的温度升高到2000℃以上。
根据本发明方法生产的溅射靶具有很高的电导率,无需昂贵的电弧折流器、或D.C.开关式电源、或其中用中等频率电源将两个靶连续用作阳极和阴极的Twin-mag系统、或任何气体控制系统特殊要求,就可采用传统的D.C.电源,在大功率下运行。采用本发明方法生产的靶,可在高达100Kw的功率下进行D.C.溅射。主要结论是在如长3.5m、直径150mm的可转动的大型靶基底上可涂覆厚达6mm的涂层。
由于二氧化钛的熔点比金属钛高,所以用本发明方法生产的靶不会有明显的电弧问题,所谓的“蒸汽电弧”问题是由于金属的熔点较低而引起的。即使对二氧化钛出现一些电弧,对靶几乎无损害。
下面参照实施例对本发明进行进一步描述。
实施例1
一个在内部水冷到35℃的可转动的靶,包括一个直径为133mm、长为800mm的不锈钢管,采用氩气作为主等离子气体,氢气作为次等离子气体,如上所述通过等离子喷涂粒径为10-40μm的二氧化钛(金红石),在靶上涂覆厚度为4-10mm的亚化学计量的二氧化钛TiOx,其中x小于2。使用了72升气体(60%氩,40%氢)。功率是45Kw(455A,96V)。
实施例2
使用市场有售的呈锐钛矿晶体形式的含有二氧化钛的白颜料。这种粉末是化学计量的并且是电绝缘的。将粉末机械成团并压成薄片,经研磨、筛分(70-100μm)并在空气中于1300℃下烧结。然后将烧结体进行研磨,并筛分成粒径为10-40μm的颗粒。颗粒是具有金红石晶体结构的黄的化学计量的不导电的二氧化钛。
用氩气作为主等离子气,氢气作为次等离子气,通过等离子喷涂上述金红石粉末,以制备由铝衬管(长2.50m,直径133mm)构成的可转动的靶。使用了75升气体(40%氩,60%氢)。功率是50Kw(110V,455A)。在氮气气氛下进行等离子喷涂。
靶以100rpm的转速转动,喷管移动速度是2.5m/min,直到涂层为4mm厚。铝管的内侧用水冷却到35℃的温度。涂覆后靶的电阻率为0.07ohm.cm。接着在高达100Kw的功率下,对靶进行试验,在溅射设备中靶运行状况良好,没有明显的电弧产生。其二氧化钛的沉积速率比用反应气体溅涂金属钛靶的沉积速率高6倍。
实施例3
在200mBar的压力下,使用粒径为1-10μm的呈锐钛矿类型的二氧化钛,用低压真空等离子体重复实施例2。采用低压等离子体,可使用较小粒径的粉末。
在实施例2的条件下,在靶基底上进行喷涂,锐钛矿被转化成亚化学计量的金红石类型的二氧化钛。涂覆后的靶的电阻率为0.02ohm.cm。
实施例4
对粒径为0.1-2μm的氧化铌(重量占25份)和二氧化钛(重量占75份)的混合物进行成团和压实,干燥后在空气中于1300℃的温度下进行烧结。然后将烧结体研磨成粒径为10-40μm的颗粒。
然后在实施例2给定的条件下,在铝衬管上,将粉末混合物以等离子喷涂成4mm的涂层。涂覆后的靶的电阻率为0.5ohm.cm,因此可用作D.C.溅射靶。
Claims (10)
1、一种制备溅射靶的方法,该靶含有亚化学计量的二氧化钛TiOx,其中x小于2,其电阻率小于0.5ohm.cm,该方法包括在缺氧和不含含氧化合物的气氛中,在靶基底上以等离子喷涂二氧化钛TiO2,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上,其中使用氩气作为等离子气体,氢气作为次等离子气体进行等离子喷涂,并且进行等离子喷涂的二氧化钛的粒径在1-60微米的范围内。
2、权利要求1的方法,其特征在于,在等离子喷涂过程中,对靶基底进行水冷却。
3、权利要求1的方法,其特征在于,靶基底是钛、不锈钢、铝或铜。
4、权利要求3的方法,其特征在于,靶基底是可转动的靶或平面磁控靶。
5.权利要求1的方法,其特征在于,与氧化铌一起等离子喷涂二氧化钛以便形成含有亚化学计量的二氧化钛和氧化铌的溅射靶。
6、权利要求1的方法,其特征在于,亚化学计量的二氧化钛TiOx的x值在1.55到1.95的范围内。
7、权利要求1的方法,其特征在于,溅射靶的电阻率为0.02ohm.cm。
8、一种溅射靶,该靶含有亚化学计量二氧化钛TiOx,其中x小于2,其电阻率小于0.5ohm.cm,该溅射靶是通过下列方法得到的,在缺氧和不含含氧化合物的气氛中,在靶基底上等离子喷涂二氧化钛TiO2,在防止亚化学计量的二氧化钛与氧结合的条件下,经冷却固化的TiOx即被涂覆到靶基底上,其中使用氩气作为等离子气体,氢气作为次等离子气体进行等离子喷涂,并且进行等离子喷涂的二氧化钛的粒径在1-60微米的范围内。
9、权利要求8的溅射靶,其特征在于,其电阻率为0.02ohm.cm。
10.权利要求8的溅射靶,其特征在于,与氧化铌一起等离子喷涂二氧化钛以便形成含有亚化学计量的二氧化钛和氧化铌的溅射靶。
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GBGB9600210.0A GB9600210D0 (en) | 1996-01-05 | 1996-01-05 | Improved sputtering targets and method for the preparation thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105102666A (zh) * | 2012-11-14 | 2015-11-25 | 贺利氏德国有限责任两合公司 | 具有优化使用特性的溅射靶 |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997008359A1 (fr) | 1995-08-23 | 1997-03-06 | Asahi Glass Company Ltd. | Cible, son procede de production et procede de formation d'une couche tres refringente |
GB9600210D0 (en) * | 1996-01-05 | 1996-03-06 | Vanderstraeten E Bvba | Improved sputtering targets and method for the preparation thereof |
US6262850B1 (en) | 1998-11-03 | 2001-07-17 | Cardinal Glass Industries, Inc. | Heat-treatable dichroic mirrors |
US6292302B1 (en) * | 1998-11-03 | 2001-09-18 | Cardinal Glass Industries, Inc. | Heat-treatable dichroic mirrors |
ATE244691T1 (de) † | 1998-12-21 | 2003-07-15 | Cardinal Cg Co | Verfahren zur beschichtung von beiden seiten eines glassubstrats |
DE29923888U1 (de) | 1999-12-03 | 2001-06-21 | Zentrum für Material- und Umwelttechnik GmbH, 09599 Freiberg | Schichtverbund für die Dünnbeschichtung großflächiger Substrate |
DE19958424C2 (de) * | 1999-12-03 | 2002-05-29 | Zentrum Fuer Material Und Umwe | Zerstäubungstarget für die Dünnbeschichtung großflächiger Substrate und Verfahren zu seiner Herstellung |
CN1158403C (zh) * | 1999-12-23 | 2004-07-21 | 西南交通大学 | 一种人工器官表面改性方法 |
AU2001241144A1 (en) | 2000-03-22 | 2001-10-03 | Nippon Sheet Glass Co. Ltd. | Substrate with photocatalytic film and method for producing the same |
JP3708429B2 (ja) * | 2000-11-30 | 2005-10-19 | Hoya株式会社 | 蒸着組成物の製造方法、蒸着組成物及び反射防止膜を有する光学部品の製造方法 |
AU2002250831A1 (en) * | 2001-01-17 | 2002-07-30 | N.V. Bekaert S.A. | Method for the production of sputtering targets |
DE10140514A1 (de) | 2001-08-17 | 2003-02-27 | Heraeus Gmbh W C | Sputtertarget auf Basis von Titandioxid |
WO2003034106A1 (fr) * | 2001-10-18 | 2003-04-24 | Bridgestone Corporation | Element optique et procede de production de cet element, filtre passe bande, filtre de coupure des ondes proche infrarouge et film anti-reflexion |
US20040115362A1 (en) * | 2002-01-14 | 2004-06-17 | Klause Hartig | Photocatalytic sputtering targets and methods for the production and use thereof |
US7063893B2 (en) | 2002-04-29 | 2006-06-20 | Cardinal Cg Company | Low-emissivity coating having low solar reflectance |
KR20020077852A (ko) * | 2002-08-30 | 2002-10-14 | 주식회사 새롬원 | 김서림방지용 유리판 |
US20070141857A1 (en) * | 2002-10-24 | 2007-06-21 | Strothers Susan D | Target designs and related methods for enhanced cooling and reduced deflection and deformation |
US20040149307A1 (en) * | 2002-12-18 | 2004-08-05 | Klaus Hartig | Reversible self-cleaning window assemblies and methods of use thereof |
DE10320472A1 (de) * | 2003-05-08 | 2004-12-02 | Kolektor D.O.O. | Plasmabehandlung zur Reinigung von Kupfer oder Nickel |
US6915095B2 (en) * | 2003-06-16 | 2005-07-05 | Xerox Corporation | Charging member having titanium oxide outer coating on grit blasted substrate |
WO2005035822A1 (en) * | 2003-10-07 | 2005-04-21 | Deposition Sciences, Inc. | Apparatus and process for high rate deposition of rutile titanium dioxide |
DE10359508B4 (de) * | 2003-12-18 | 2007-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Magnetronsputtern |
EP1713736B1 (en) * | 2003-12-22 | 2016-04-27 | Cardinal CG Company | Graded photocatalytic coatings and methods of making such coatings |
CA2556730C (en) | 2004-02-25 | 2013-12-24 | Afg Industries, Inc. | Heat stabilized sub-stoichiometric dielectrics |
JPWO2005100013A1 (ja) * | 2004-04-06 | 2008-03-06 | 帝人デュポンフィルム株式会社 | 反射防止フィルム |
WO2006001138A1 (ja) * | 2004-06-29 | 2006-01-05 | Pioneer Corporation | 薄膜形成用スパッタリングターゲット、誘電体薄膜、光ディスク及びその製造方法 |
DE102004032635A1 (de) * | 2004-07-06 | 2006-02-09 | Gfe Metalle Und Materialien Gmbh | Verfahren zur Herstellung eines Titan-Suboxid-basierten Beschichtungswerkstoff, entsprechend hergestellter Beschichtungswerkstoff und damit versehenes Sputtertarget |
JP2008505842A (ja) | 2004-07-12 | 2008-02-28 | 日本板硝子株式会社 | 低保守コーティング |
CA2575586A1 (en) * | 2004-08-10 | 2006-02-23 | Cardinal Cg Company | Lcd mirror system and method |
CA2583174A1 (en) * | 2004-10-04 | 2006-04-20 | Cardinal Cg Company | Thin film coating and temporary protection technology, insulating glazing units, and associated methods |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
US7968216B2 (en) * | 2005-01-08 | 2011-06-28 | Toyoda Gosei Co., Ltd. | Internal gear pump |
US7442933B2 (en) * | 2005-02-03 | 2008-10-28 | Lin Alice L | Bolometer having an amorphous titanium oxide layer with high resistance stability |
FR2881757B1 (fr) * | 2005-02-08 | 2007-03-30 | Saint Gobain | Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium |
US8053048B2 (en) * | 2005-04-25 | 2011-11-08 | Baxter International Inc. | Overpouch film and container and method of making same |
DE102005029952B3 (de) * | 2005-06-28 | 2007-01-11 | Lanxess Deutschland Gmbh | Niveauausgleichslasche |
US7342716B2 (en) | 2005-10-11 | 2008-03-11 | Cardinal Cg Company | Multiple cavity low-emissivity coatings |
WO2007053586A2 (en) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
US20070134500A1 (en) * | 2005-12-14 | 2007-06-14 | Klaus Hartig | Sputtering targets and methods for depositing film containing tin and niobium |
WO2007121215A1 (en) | 2006-04-11 | 2007-10-25 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
WO2007124291A2 (en) | 2006-04-19 | 2007-11-01 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
DE102006027029B4 (de) * | 2006-06-09 | 2010-09-30 | W.C. Heraeus Gmbh | Sputtertarget mit einem Sputtermaterial auf Basis TiO2 sowie Herstellverfahren |
US20070289869A1 (en) * | 2006-06-15 | 2007-12-20 | Zhifei Ye | Large Area Sputtering Target |
JP2010513175A (ja) * | 2006-06-30 | 2010-04-30 | カーディナル・シージー・カンパニー | カーボンナノチューブグレージング技術 |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
CN101548582B (zh) * | 2006-11-17 | 2012-11-14 | 法国圣-戈班玻璃公司 | 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置 |
US7807248B2 (en) * | 2007-08-14 | 2010-10-05 | Cardinal Cg Company | Solar control low-emissivity coatings |
US7622717B2 (en) * | 2007-08-22 | 2009-11-24 | Drs Sensors & Targeting Systems, Inc. | Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption |
WO2009036263A2 (en) | 2007-09-14 | 2009-03-19 | Cardinal Cg Company | Low-maintenance coating technology |
US7655274B2 (en) † | 2007-11-05 | 2010-02-02 | Guardian Industries Corp. | Combustion deposition using aqueous precursor solutions to deposit titanium dioxide coatings |
JP4993745B2 (ja) * | 2007-12-28 | 2012-08-08 | 株式会社アルバック | 成膜装置 |
US8003070B2 (en) * | 2008-03-13 | 2011-08-23 | Battelle Energy Alliance, Llc | Methods for forming particles from single source precursors |
US20130026535A1 (en) * | 2011-07-26 | 2013-01-31 | Battelle Energy Alliance, Llc | Formation of integral composite photon absorber layer useful for photoactive devices and sensors |
US9371226B2 (en) | 2011-02-02 | 2016-06-21 | Battelle Energy Alliance, Llc | Methods for forming particles |
US8951446B2 (en) | 2008-03-13 | 2015-02-10 | Battelle Energy Alliance, Llc | Hybrid particles and associated methods |
US8324414B2 (en) | 2009-12-23 | 2012-12-04 | Battelle Energy Alliance, Llc | Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods |
EP2116631A1 (en) * | 2008-04-30 | 2009-11-11 | Applied Materials, Inc. | Sputter target |
US20090272641A1 (en) * | 2008-04-30 | 2009-11-05 | Applied Materials, Inc. | Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell |
JP5624712B2 (ja) * | 2008-09-01 | 2014-11-12 | 豊田合成株式会社 | TiO2からなる導電性透明層の製造方法及び当該導電性透明層の製造方法を利用した半導体発光素子の製造方法 |
JP2010231172A (ja) * | 2009-03-04 | 2010-10-14 | Seiko Epson Corp | 光学物品およびその製造方法 |
FR2944293B1 (fr) * | 2009-04-10 | 2012-05-18 | Saint Gobain Coating Solutions | Procede d'elaboration par projection thermique d'une cible |
JP5588135B2 (ja) * | 2009-08-10 | 2014-09-10 | ホーヤ レンズ マニュファクチャリング フィリピン インク | 光学物品の製造方法 |
JP2012032690A (ja) | 2010-08-02 | 2012-02-16 | Seiko Epson Corp | 光学物品およびその製造方法 |
DE102010048089B4 (de) * | 2010-10-01 | 2016-09-01 | Carl Zeiss Vision International Gmbh | Verfahren zur Erzeugung einer mehrere Schichten aufweisenden antistatischen Beschichtung für ein Linsenelement |
EP2723915A1 (en) | 2011-06-27 | 2014-04-30 | Soleras Ltd. | Sputtering target |
CN102286717B (zh) * | 2011-09-01 | 2013-07-03 | 基迈克材料科技(苏州)有限公司 | 以等离子喷涂制备圆柱形大面积镀膜靶材及方法 |
DE102011116062A1 (de) * | 2011-10-18 | 2013-04-18 | Sintertechnik Gmbh | Keramisches Erzeugnis zur Verwendung als Target |
EP2613358A2 (en) * | 2012-01-04 | 2013-07-10 | OC Oerlikon Balzers AG | Double layer antireflection coating for silicon based solar cell modules |
DE102012112739A1 (de) * | 2012-10-23 | 2014-04-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Licht absorbierendes Schichtsystem und dessen Herstellung sowie dafür geeignetes Sputtertarget |
PL2953915T3 (pl) | 2013-02-05 | 2017-07-31 | Soleras Advanced Coatings Bvba | Tarcze z tlenku (Ga) Zn Sn do rozpylania jonowego |
RU2013158730A (ru) * | 2013-12-27 | 2015-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный аэрокосмический университет имени академика С.П. Королева" (национальный исследовательский университет)" (СГАУ) | Способ изготовления катодной мишени для распыления керамических материалов |
JP5784849B2 (ja) * | 2015-01-21 | 2015-09-24 | 三井金属鉱業株式会社 | セラミックス円筒形スパッタリングターゲット材およびその製造方法 |
EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
EP3375904B1 (en) | 2017-03-14 | 2022-05-04 | Materion Advanced Materials Germany GmbH | Cylindrical titanium oxide sputtering target and process for manufacturing the same |
DE102017118172A1 (de) * | 2017-08-09 | 2019-02-14 | Forplan AG | Beschichtungsverfahren, Beschichtungsvorrichtung zur Durchführung dieses Verfahrens und Beschichtungsanlage mit einer solchen Beschichtungsvorrichtung |
CN110257790B (zh) * | 2019-07-29 | 2020-07-03 | 福建阿石创新材料股份有限公司 | 一种三氧化二铝-TiOx靶材及其制备方法和应用 |
KR20240089692A (ko) * | 2021-12-01 | 2024-06-20 | 컨템포러리 엠퍼렉스 테크놀로지 씨오., 리미티드 | 도핑된 산화니켈 타겟재 및 그 제조방법과 용도 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US232680A (en) | 1880-09-28 | Peters | ||
US1231280A (en) | 1916-11-16 | 1917-06-26 | John F Metten | Safety-valve. |
US1438462A (en) | 1919-04-17 | 1922-12-12 | Skf Svenska Kullagerfab Ab | Shock indicator |
US1595061A (en) | 1922-10-17 | 1926-08-03 | Valerius Johann | Electric cut-out |
GB232680A (en) | 1924-01-23 | 1925-04-23 | Metal & Thermit Corp | Improvements in the production of a form of titanium oxide |
US3616445A (en) | 1967-12-14 | 1971-10-26 | Electronor Corp | Titanium or tantalum base electrodes with applied titanium or tantalum oxide face activated with noble metals or noble metal oxides |
DE2300422C3 (de) * | 1973-01-05 | 1981-10-15 | Hoechst Ag, 6000 Frankfurt | Verfahren zur Herstellung einer Elektrode |
DE2405010C3 (de) | 1974-02-02 | 1982-08-05 | Sigri Elektrographit Gmbh, 8901 Meitingen | Sinter-Elektrode für elektrochemische Prozesse und Verfahren zum Herstellen der Elektrode |
GB1595061A (en) * | 1976-11-22 | 1981-08-05 | Atomic Energy Authority Uk | Electrically conductive layers produced by plasma spraying |
DE2752875C2 (de) | 1977-11-26 | 1986-05-15 | Sigri GmbH, 8901 Meitingen | Elektrode für elektrochemische Prozesse und Verfahren zu deren Herstellung |
GB2028376B (en) | 1978-08-23 | 1982-11-03 | Ppg Industries Inc | Electrically conductive coatings |
US4216259A (en) | 1979-01-02 | 1980-08-05 | Bfg Glassgroup | Heat reflecting pane and a method of producing it |
US4422917A (en) * | 1980-09-10 | 1983-12-27 | Imi Marston Limited | Electrode material, electrode and electrochemical cell |
DE3039821A1 (de) * | 1980-10-22 | 1982-06-03 | Robert Bosch Gmbh, 7000 Stuttgart | Mehrschichtsystem fuer waermeschutzanwendung |
US4336119A (en) | 1981-01-29 | 1982-06-22 | Ppg Industries, Inc. | Method of and apparatus for control of reactive sputtering deposition |
US4422916A (en) * | 1981-02-12 | 1983-12-27 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
US5126218A (en) | 1985-04-23 | 1992-06-30 | Clarke Robert L | Conductive ceramic substrate for batteries |
JPS62161945A (ja) | 1985-08-20 | 1987-07-17 | Toyo Soda Mfg Co Ltd | セラミックス系スパッタリングタ−ゲットの製造法 |
JPS63178474A (ja) | 1987-01-19 | 1988-07-22 | 日立金属株式会社 | 長波長赤外線を放射する発熱体 |
US4931213A (en) | 1987-01-23 | 1990-06-05 | Cass Richard B | Electrically-conductive titanium suboxides |
JPH0812302B2 (ja) * | 1987-11-02 | 1996-02-07 | 株式会社日立製作所 | チタン酸化物薄膜の製造方法 |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US4861680A (en) | 1988-02-11 | 1989-08-29 | Southwall Technologies | Bronze-grey glazing film and window made therefrom |
US5605609A (en) | 1988-03-03 | 1997-02-25 | Asahi Glass Company Ltd. | Method for forming low refractive index film comprising silicon dioxide |
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
US5196400A (en) * | 1990-08-17 | 1993-03-23 | At&T Bell Laboratories | High temperature superconductor deposition by sputtering |
US5105310A (en) | 1990-10-11 | 1992-04-14 | Viratec Thin Films, Inc. | Dc reactively sputtered antireflection coatings |
US5100527A (en) * | 1990-10-18 | 1992-03-31 | Viratec Thin Films, Inc. | Rotating magnetron incorporating a removable cathode |
US5616263A (en) * | 1992-11-09 | 1997-04-01 | American Roller Company | Ceramic heater roller |
US5589280A (en) | 1993-02-05 | 1996-12-31 | Southwall Technologies Inc. | Metal on plastic films with adhesion-promoting layer |
US5489369A (en) | 1993-10-25 | 1996-02-06 | Viratec Thin Films, Inc. | Method and apparatus for thin film coating an article |
GB9324069D0 (en) | 1993-11-23 | 1994-01-12 | Glaverbel | A glazing unit and a method for its manufacture |
US5451457A (en) | 1993-12-20 | 1995-09-19 | Libbey-Owens-Ford Co. | Method and material for protecting glass surfaces |
JPH07215074A (ja) | 1994-02-07 | 1995-08-15 | Toyota Motor Corp | 車両用アンダーカバー装置 |
JP3836163B2 (ja) | 1994-02-22 | 2006-10-18 | 旭硝子セラミックス株式会社 | 高屈折率膜の形成方法 |
US5616225A (en) | 1994-03-23 | 1997-04-01 | The Boc Group, Inc. | Use of multiple anodes in a magnetron for improving the uniformity of its plasma |
JPH08134638A (ja) | 1994-11-04 | 1996-05-28 | Asahi Glass Co Ltd | チタン酸化物膜の成膜方法 |
US5593786A (en) | 1994-11-09 | 1997-01-14 | Libbey-Owens-Ford Company | Self-adhering polyvinyl chloride safety glass interlayer |
DE4441206C2 (de) | 1994-11-19 | 1996-09-26 | Leybold Ag | Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen |
US5574079A (en) | 1994-12-21 | 1996-11-12 | Union Carbide Chemicals & Plastics Technology Corporation | Method for the preparation of water-borne coating compositions using thermoplastic polyhydroxyether resins having narrow polydispersity |
ES2124048T3 (es) | 1995-07-08 | 1999-01-16 | Leybold Ag | Sistema catodico para un dispositivo de pulverizacion sobre un objeto. |
US6455141B1 (en) | 1995-07-24 | 2002-09-24 | Southwall Technologies Inc. | Laminate structure and process for its production |
US5743931A (en) | 1995-08-14 | 1998-04-28 | Libbey-Owens-Ford Co. | Glass sheet conveying and bending apparatus |
WO1997008359A1 (fr) * | 1995-08-23 | 1997-03-06 | Asahi Glass Company Ltd. | Cible, son procede de production et procede de formation d'une couche tres refringente |
JPH09189801A (ja) | 1996-01-09 | 1997-07-22 | Shin Etsu Chem Co Ltd | 耐熱性反射防止膜付き光学部品 |
GB9600210D0 (en) * | 1996-01-05 | 1996-03-06 | Vanderstraeten E Bvba | Improved sputtering targets and method for the preparation thereof |
WO1997025201A1 (en) | 1996-01-11 | 1997-07-17 | Libbey-Owens-Ford Co. | Coated glass article having a solar control coating |
-
1996
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1997
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- 2001-01-12 US US09/759,661 patent/US20010019738A1/en not_active Abandoned
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- 2001-10-19 US US10/032,901 patent/US20020127349A1/en not_active Abandoned
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105102666A (zh) * | 2012-11-14 | 2015-11-25 | 贺利氏德国有限责任两合公司 | 具有优化使用特性的溅射靶 |
CN105102666B (zh) * | 2012-11-14 | 2018-04-24 | 万腾荣先进材料德国有限责任公司 | 具有优化使用特性的溅射靶 |
US9960022B2 (en) | 2012-11-14 | 2018-05-01 | Materion Advanced Materials Germany Gmbh | Sputtering target with optimized performance characteristics |
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