CN1203559C - 氮化物半导体的制造方法及半导体器件的制造方法 - Google Patents

氮化物半导体的制造方法及半导体器件的制造方法 Download PDF

Info

Publication number
CN1203559C
CN1203559C CNB021403414A CN02140341A CN1203559C CN 1203559 C CN1203559 C CN 1203559C CN B021403414 A CNB021403414 A CN B021403414A CN 02140341 A CN02140341 A CN 02140341A CN 1203559 C CN1203559 C CN 1203559C
Authority
CN
China
Prior art keywords
nitride
semiconductor
based semiconductor
type
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021403414A
Other languages
English (en)
Chinese (zh)
Other versions
CN1395322A (zh
Inventor
松本治
安斋信一
喜嶋悟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN1395322A publication Critical patent/CN1395322A/zh
Application granted granted Critical
Publication of CN1203559C publication Critical patent/CN1203559C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
CNB021403414A 2001-07-02 2002-07-01 氮化物半导体的制造方法及半导体器件的制造方法 Expired - Fee Related CN1203559C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP200628/2001 2001-07-02
JP2001200628A JP3622200B2 (ja) 2001-07-02 2001-07-02 窒化物半導体の製造方法および半導体素子の製造方法

Publications (2)

Publication Number Publication Date
CN1395322A CN1395322A (zh) 2003-02-05
CN1203559C true CN1203559C (zh) 2005-05-25

Family

ID=19037721

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021403414A Expired - Fee Related CN1203559C (zh) 2001-07-02 2002-07-01 氮化物半导体的制造方法及半导体器件的制造方法

Country Status (5)

Country Link
US (1) US6960482B2 (ja)
JP (1) JP3622200B2 (ja)
KR (3) KR100893131B1 (ja)
CN (1) CN1203559C (ja)
TW (1) TW546730B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040079506A (ko) * 2003-03-07 2004-09-16 엘지전자 주식회사 화합물 반도체 발광 소자의 제조 방법
US8089093B2 (en) * 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
US7405441B2 (en) 2005-03-11 2008-07-29 Infineon Technology Ag Semiconductor memory
JP4536568B2 (ja) * 2005-03-31 2010-09-01 住友電工デバイス・イノベーション株式会社 Ｆｅｔの製造方法
JP2006352075A (ja) 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
US20110018105A1 (en) * 2005-05-17 2011-01-27 Sumitomo Electric Industries, Ltd. Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices
US8786793B2 (en) * 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8399273B2 (en) * 2008-08-18 2013-03-19 Tsmc Solid State Lighting Ltd. Light-emitting diode with current-spreading region
US8986835B2 (en) * 2010-04-05 2015-03-24 Purdue Research Foundation Growth process for gallium nitride porous nanorods
CN102447020A (zh) * 2010-10-12 2012-05-09 泰谷光电科技股份有限公司 制造高亮度垂直式发光二极管的方法
TW201216503A (en) * 2010-10-12 2012-04-16 Tekcore Co Ltd Method for fabricating a vertical light-emitting diode with high brightness
US8399367B2 (en) * 2011-06-28 2013-03-19 Nitride Solutions, Inc. Process for high-pressure nitrogen annealing of metal nitrides
CN109755356B (zh) * 2017-11-07 2020-08-21 山东浪潮华光光电子股份有限公司 一种提升GaN基发光二极管内置欧姆接触性能的方法
CN113161410A (zh) * 2021-04-22 2021-07-23 中国科学院苏州纳米技术与纳米仿生研究所 氮化镓高温退火保护结构及其应用

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120885A (ja) 1989-10-04 1991-05-23 Seiko Epson Corp 半導体レーザの製造方法
JP2540791B2 (ja) * 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
JP3325713B2 (ja) * 1994-08-22 2002-09-17 ローム株式会社 半導体発光素子の製法
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
US6291840B1 (en) * 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
JP3097597B2 (ja) * 1997-05-09 2000-10-10 昭和電工株式会社 Ｉｉｉ族窒化物半導体の形成方法
US5902130A (en) * 1997-07-17 1999-05-11 Motorola, Inc. Thermal processing of oxide-compound semiconductor structures
JP3457511B2 (ja) * 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
JPH11219919A (ja) * 1998-02-02 1999-08-10 Sony Corp 金属膜の成膜方法ならびに半導体装置およびその製造方法
JP3425357B2 (ja) * 1998-03-19 2003-07-14 株式会社東芝 ｐ型窒化ガリウム系化合物半導体層の製造方法
JPH11274168A (ja) * 1998-03-20 1999-10-08 Toshiba Corp ヘテロ接合バイポーラトランジスタの製造方法
JPH11274227A (ja) * 1998-03-20 1999-10-08 Hitachi Ltd 半導体チップの実装方法および装置
KR100696353B1 (ko) * 1998-07-23 2007-03-19 소니 가부시끼 가이샤 발광 소자 및 그 제조 방법
JP2000091637A (ja) * 1998-09-07 2000-03-31 Rohm Co Ltd 半導体発光素子の製法
JP3794876B2 (ja) * 1998-09-09 2006-07-12 松下電器産業株式会社 半導体装置の製造方法
JP2000101134A (ja) * 1998-09-18 2000-04-07 Stanley Electric Co Ltd 窒化物半導体素子の製造方法および窒化物半導体素子
TW386286B (en) * 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
JP2000244010A (ja) * 1999-02-19 2000-09-08 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP4357022B2 (ja) * 1999-02-24 2009-11-04 三洋電機株式会社 半導体発光素子の製造方法
JP3658756B2 (ja) * 1999-03-01 2005-06-08 住友電気工業株式会社 化合物半導体の製造方法
JP3723374B2 (ja) * 1999-03-19 2005-12-07 ローム株式会社 半導体発光素子の製法
US6093952A (en) * 1999-03-31 2000-07-25 California Institute Of Technology Higher power gallium nitride schottky rectifier
JP2001267555A (ja) * 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6586328B1 (en) * 2000-06-05 2003-07-01 The Board Of Trustees Of The University Of Illinois Method to metallize ohmic electrodes to P-type group III nitrides
US20020004254A1 (en) * 2000-07-10 2002-01-10 Showa Denko Kabushiki Kaisha Method for producing p-type gallium nitride-based compound semiconductor, method for producing gallium nitride-based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法

Also Published As

Publication number Publication date
KR20030004089A (ko) 2003-01-14
CN1395322A (zh) 2003-02-05
TW546730B (en) 2003-08-11
US6960482B2 (en) 2005-11-01
KR100893131B1 (ko) 2009-04-15
KR20080103501A (ko) 2008-11-27
KR100952654B1 (ko) 2010-04-13
JP2003017810A (ja) 2003-01-17
US20030082893A1 (en) 2003-05-01
KR101224532B1 (ko) 2013-01-21
KR20090126228A (ko) 2009-12-08
JP3622200B2 (ja) 2005-02-23

Similar Documents

Publication Publication Date Title
CN1271766C (zh) 氮化物系半导体元件及其制造方法
CN1203559C (zh) 氮化物半导体的制造方法及半导体器件的制造方法
US8629474B2 (en) Light emitting device and method of manufacturing the same
US7652299B2 (en) Nitride semiconductor light-emitting device and method for fabrication thereof
CN1897374A (zh) 半导体元件及其制造方法
CN1178303C (zh) 半导体叠层衬底及其制造方法和半导体器件
CN1249821C (zh) 以氮化物为基础的半导体发光器件及其制造方法
JP2007504682A (ja) 高Ａｌ含量ＡｌＧａＮ拡散バリアを有するＩＩＩ族窒化物電子素子構造
JP2004006718A (ja) 窒化物系半導体素子およびその製造方法
CN1744396A (zh) 激光二极管的制造方法
CN1394371A (zh) 半导体激光装置的制造方法
JPWO2020121794A1 (ja) 窒化物系半導体発光素子及びその製造方法、並びに、窒化物系半導体結晶の製造方法
EP1113485A2 (en) Method for producing a semiconductor device
CN1918719A (zh) 基于氮化镓的化合物半导体发光器件
CN109686823B (zh) 一种氮化镓基发光二极管外延片及其制作方法
CN1198341C (zh) 第ⅲ族元素氮化物半导体元件的生产方法
JP3792003B2 (ja) 半導体発光素子
KR100850780B1 (ko) 질화물계 반도체 발광소자의 제조방법
WO2011086730A1 (ja) Iii族窒化物系半導体素子
JP2000277801A (ja) 半導体発光素子の製法
CN102945903A (zh) 半导体器件及其制造方法
KR100329280B1 (ko) 광전자/전자 소자의 오믹접촉 향상을 위한 2단계 하이브리드표면개질 방법
JP2007258375A (ja) 半導体素子の製造方法
KR20020030368A (ko) 화합물 반도체 디바이스 및 그의 제조방법
JP2007258376A (ja) 半導体素子の製造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050525

Termination date: 20170701