CN120283201A - 抗蚀剂下层膜形成用组合物 - Google Patents

抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN120283201A
CN120283201A CN202380082419.3A CN202380082419A CN120283201A CN 120283201 A CN120283201 A CN 120283201A CN 202380082419 A CN202380082419 A CN 202380082419A CN 120283201 A CN120283201 A CN 120283201A
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China
Prior art keywords
group
underlayer film
resist underlayer
carbon atoms
polymer
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CN202380082419.3A
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English (en)
Chinese (zh)
Inventor
绪方裕斗
田村护
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Nissan Chemical Corp
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Nissan Chemical Corp
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Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN120283201A publication Critical patent/CN120283201A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/0644—Poly(1,3,5)triazines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN202380082419.3A 2022-12-15 2023-12-11 抗蚀剂下层膜形成用组合物 Pending CN120283201A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-200212 2022-12-15
JP2022200212 2022-12-15
PCT/JP2023/044231 WO2024128190A1 (ja) 2022-12-15 2023-12-11 レジスト下層膜形成用組成物

Publications (1)

Publication Number Publication Date
CN120283201A true CN120283201A (zh) 2025-07-08

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CN202380082419.3A Pending CN120283201A (zh) 2022-12-15 2023-12-11 抗蚀剂下层膜形成用组合物

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EP (1) EP4636487A1 (https=)
JP (1) JPWO2024128190A1 (https=)
KR (1) KR20250121560A (https=)
CN (1) CN120283201A (https=)
TW (1) TW202439025A (https=)
WO (1) WO2024128190A1 (https=)

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US12332566B2 (en) 2018-07-31 2025-06-17 Nissan Chemical Corporation Resist underlayer film-forming composition
JPWO2020111068A1 (ja) 2018-11-29 2021-10-28 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法
KR102194951B1 (ko) 2019-03-18 2020-12-24 한국세라믹기술원 내플라즈마 세라믹의 가속수명 시험방법
US11977331B2 (en) * 2019-06-17 2024-05-07 Nissan Chemical Corporation Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched
TWI906277B (zh) * 2020-03-31 2025-12-01 日商日產化學股份有限公司 膜形成用組成物
KR102941704B1 (ko) * 2020-03-31 2026-03-19 닛산 가가쿠 가부시키가이샤 가교제의 변성이 억제된 레지스트 하층막 형성 조성물
TWI900665B (zh) 2020-10-01 2025-10-11 日商日產化學股份有限公司 含末端被封閉之反應生成物的阻劑下層膜形成組成物
US20240176243A1 (en) 2021-03-16 2024-05-30 Nissan Chemical Corporation Resist underlayer film-forming composition

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TW202439025A (zh) 2024-10-01
JPWO2024128190A1 (https=) 2024-06-20
EP4636487A1 (en) 2025-10-22
KR20250121560A (ko) 2025-08-12
WO2024128190A1 (ja) 2024-06-20

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