JPWO2024128190A1 - - Google Patents

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Publication number
JPWO2024128190A1
JPWO2024128190A1 JP2024564373A JP2024564373A JPWO2024128190A1 JP WO2024128190 A1 JPWO2024128190 A1 JP WO2024128190A1 JP 2024564373 A JP2024564373 A JP 2024564373A JP 2024564373 A JP2024564373 A JP 2024564373A JP WO2024128190 A1 JPWO2024128190 A1 JP WO2024128190A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024564373A
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Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2024128190A1 publication Critical patent/JPWO2024128190A1/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/0644Poly(1,3,5)triazines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2024564373A 2022-12-15 2023-12-11 Pending JPWO2024128190A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022200212 2022-12-15
PCT/JP2023/044231 WO2024128190A1 (ja) 2022-12-15 2023-12-11 レジスト下層膜形成用組成物

Publications (1)

Publication Number Publication Date
JPWO2024128190A1 true JPWO2024128190A1 (https=) 2024-06-20

Family

ID=91484994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024564373A Pending JPWO2024128190A1 (https=) 2022-12-15 2023-12-11

Country Status (6)

Country Link
EP (1) EP4636487A1 (https=)
JP (1) JPWO2024128190A1 (https=)
KR (1) KR20250121560A (https=)
CN (1) CN120283201A (https=)
TW (1) TW202439025A (https=)
WO (1) WO2024128190A1 (https=)

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TWI778122B (zh) 2017-09-20 2022-09-21 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法
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JP7185684B2 (ja) 2018-03-27 2022-12-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
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WO2019187803A1 (ja) 2018-03-30 2019-10-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP6973265B2 (ja) 2018-04-20 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
US12332566B2 (en) 2018-07-31 2025-06-17 Nissan Chemical Corporation Resist underlayer film-forming composition
JPWO2020111068A1 (ja) 2018-11-29 2021-10-28 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法
KR102194951B1 (ko) 2019-03-18 2020-12-24 한국세라믹기술원 내플라즈마 세라믹의 가속수명 시험방법
US11977331B2 (en) * 2019-06-17 2024-05-07 Nissan Chemical Corporation Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched
TWI906277B (zh) * 2020-03-31 2025-12-01 日商日產化學股份有限公司 膜形成用組成物
KR102941704B1 (ko) * 2020-03-31 2026-03-19 닛산 가가쿠 가부시키가이샤 가교제의 변성이 억제된 레지스트 하층막 형성 조성물
TWI900665B (zh) 2020-10-01 2025-10-11 日商日產化學股份有限公司 含末端被封閉之反應生成物的阻劑下層膜形成組成物
US20240176243A1 (en) 2021-03-16 2024-05-30 Nissan Chemical Corporation Resist underlayer film-forming composition

Also Published As

Publication number Publication date
TW202439025A (zh) 2024-10-01
CN120283201A (zh) 2025-07-08
EP4636487A1 (en) 2025-10-22
KR20250121560A (ko) 2025-08-12
WO2024128190A1 (ja) 2024-06-20

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