CN1175320C - 适用于生成亚微米级宽金属线图案的制法 - Google Patents

适用于生成亚微米级宽金属线图案的制法 Download PDF

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Publication number
CN1175320C
CN1175320C CNB008049254A CN00804925A CN1175320C CN 1175320 C CN1175320 C CN 1175320C CN B008049254 A CNB008049254 A CN B008049254A CN 00804925 A CN00804925 A CN 00804925A CN 1175320 C CN1175320 C CN 1175320C
Authority
CN
China
Prior art keywords
substrate
volume
photoresist layer
coating
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB008049254A
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English (en)
Chinese (zh)
Other versions
CN1343326A (zh
Inventor
Rd
R·D·莱德
÷
R·R·丹梅尔
J·P·萨根
M·A·斯帕克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant Finance BVI Ltd
NXP USA Inc
Original Assignee
Clariant Finance BVI Ltd
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd, Motorola Inc filed Critical Clariant Finance BVI Ltd
Publication of CN1343326A publication Critical patent/CN1343326A/zh
Application granted granted Critical
Publication of CN1175320C publication Critical patent/CN1175320C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Catalysts (AREA)
  • Coating With Molten Metal (AREA)
  • Load-Engaging Elements For Cranes (AREA)
  • Physical Vapour Deposition (AREA)
CNB008049254A 1999-03-12 2000-03-03 适用于生成亚微米级宽金属线图案的制法 Expired - Lifetime CN1175320C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines
US09/268,438 1999-03-12

Publications (2)

Publication Number Publication Date
CN1343326A CN1343326A (zh) 2002-04-03
CN1175320C true CN1175320C (zh) 2004-11-10

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008049254A Expired - Lifetime CN1175320C (zh) 1999-03-12 2000-03-03 适用于生成亚微米级宽金属线图案的制法

Country Status (11)

Country Link
US (1) US6372414B1 (enExample)
EP (1) EP1166182B1 (enExample)
JP (1) JP4495863B2 (enExample)
KR (1) KR100593653B1 (enExample)
CN (1) CN1175320C (enExample)
AT (1) ATE310975T1 (enExample)
DE (1) DE60024244T2 (enExample)
HK (1) HK1044824B (enExample)
MY (1) MY122595A (enExample)
TW (1) TW548515B (enExample)
WO (1) WO2000055691A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
KR100708790B1 (ko) * 2003-05-19 2007-04-18 다이요 잉키 세이조 가부시키가이샤 릴리프 이미지의 형성 방법 및 형성된 패턴
JP4177846B2 (ja) * 2004-01-15 2008-11-05 松下電器産業株式会社 金属パターン及びその製造方法
JP2005353763A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
JP4495863B2 (ja) 2010-07-07
TW548515B (en) 2003-08-21
ATE310975T1 (de) 2005-12-15
MY122595A (en) 2006-04-29
CN1343326A (zh) 2002-04-03
EP1166182A1 (en) 2002-01-02
US6372414B1 (en) 2002-04-16
KR100593653B1 (ko) 2006-06-30
HK1044824B (zh) 2005-04-08
DE60024244T2 (de) 2006-08-03
EP1166182B1 (en) 2005-11-23
KR20010113735A (ko) 2001-12-28
HK1044824A1 (en) 2002-11-01
JP2002539505A (ja) 2002-11-19
DE60024244D1 (de) 2005-12-29
WO2000055691A1 (en) 2000-09-21

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