JP4495863B2 - 半微量幅金属線を形成するのに適するパターンの製造方法 - Google Patents

半微量幅金属線を形成するのに適するパターンの製造方法 Download PDF

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Publication number
JP4495863B2
JP4495863B2 JP2000605859A JP2000605859A JP4495863B2 JP 4495863 B2 JP4495863 B2 JP 4495863B2 JP 2000605859 A JP2000605859 A JP 2000605859A JP 2000605859 A JP2000605859 A JP 2000605859A JP 4495863 B2 JP4495863 B2 JP 4495863B2
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JP
Japan
Prior art keywords
substrate
stage
soaking solution
photoresist layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000605859A
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English (en)
Japanese (ja)
Other versions
JP2002539505A (ja
JP2002539505A5 (enExample
Inventor
レッド・ランディ・ディー
ダンメル・ラルフ・アール
サガン・ジョン・ピー
スパック・マーク・エイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
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Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JP2002539505A publication Critical patent/JP2002539505A/ja
Publication of JP2002539505A5 publication Critical patent/JP2002539505A5/ja
Application granted granted Critical
Publication of JP4495863B2 publication Critical patent/JP4495863B2/ja
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Catalysts (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coating With Molten Metal (AREA)
  • Load-Engaging Elements For Cranes (AREA)
  • Physical Vapour Deposition (AREA)
JP2000605859A 1999-03-12 2000-03-03 半微量幅金属線を形成するのに適するパターンの製造方法 Expired - Lifetime JP4495863B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/268,438 1999-03-12
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines
PCT/EP2000/001831 WO2000055691A1 (en) 1999-03-12 2000-03-03 Method for producing a pattern suitable for forming sub-micron width metal lines

Publications (3)

Publication Number Publication Date
JP2002539505A JP2002539505A (ja) 2002-11-19
JP2002539505A5 JP2002539505A5 (enExample) 2007-04-05
JP4495863B2 true JP4495863B2 (ja) 2010-07-07

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000605859A Expired - Lifetime JP4495863B2 (ja) 1999-03-12 2000-03-03 半微量幅金属線を形成するのに適するパターンの製造方法

Country Status (11)

Country Link
US (1) US6372414B1 (enExample)
EP (1) EP1166182B1 (enExample)
JP (1) JP4495863B2 (enExample)
KR (1) KR100593653B1 (enExample)
CN (1) CN1175320C (enExample)
AT (1) ATE310975T1 (enExample)
DE (1) DE60024244T2 (enExample)
HK (1) HK1044824B (enExample)
MY (1) MY122595A (enExample)
TW (1) TW548515B (enExample)
WO (1) WO2000055691A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
WO2004101174A1 (ja) * 2003-05-19 2004-11-25 Taiyo Ink Mfg. Co., Ltd. レリーフイメージの形成方法およびそのパターン形成物
ATE460830T1 (de) * 2004-01-15 2010-03-15 Panasonic Corp Struktur und prozess zu ihrer herstellung
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) * 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
CN1343326A (zh) 2002-04-03
JP2002539505A (ja) 2002-11-19
DE60024244T2 (de) 2006-08-03
EP1166182A1 (en) 2002-01-02
HK1044824B (zh) 2005-04-08
KR100593653B1 (ko) 2006-06-30
US6372414B1 (en) 2002-04-16
KR20010113735A (ko) 2001-12-28
WO2000055691A1 (en) 2000-09-21
HK1044824A1 (en) 2002-11-01
ATE310975T1 (de) 2005-12-15
DE60024244D1 (de) 2005-12-29
EP1166182B1 (en) 2005-11-23
TW548515B (en) 2003-08-21
MY122595A (en) 2006-04-29
CN1175320C (zh) 2004-11-10

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