JPS6419344A - Organic alkali developing solution for positive type photoresist - Google Patents

Organic alkali developing solution for positive type photoresist

Info

Publication number
JPS6419344A
JPS6419344A JP590186A JP590186A JPS6419344A JP S6419344 A JPS6419344 A JP S6419344A JP 590186 A JP590186 A JP 590186A JP 590186 A JP590186 A JP 590186A JP S6419344 A JPS6419344 A JP S6419344A
Authority
JP
Japan
Prior art keywords
development
positive type
type photoresist
concn
polyol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP590186A
Other languages
Japanese (ja)
Inventor
Kenji Niwa
Yasumi Sawakuri
Masaharu Motone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP590186A priority Critical patent/JPS6419344A/en
Priority to JP3518087A priority patent/JPS63259560A/en
Publication of JPS6419344A publication Critical patent/JPS6419344A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To obtain a developing soln. causing to change in the rate of development and improving dimensional accuracy and dimensional stability by using specified amts. of specified tetramethylammonium hydroxide, polyol and a solvent for a positive type photoresist sensitizer. CONSTITUTION:A developing soln. contg. 0.5-3.5wt.%, preferably 2.38-2.50wt.% tetramethylammonium hydroxide represented by the formula, 0.2-10wt.%, preferably 1.0-4.0wt.% polyol and 0.001-0.1wt.% solvent for a positive type photoresist sensitizer is prepd. When the concn. of the hydroxide is <0.5%, the rate of development is low, and in case of >3.5%, dimensional stability is deteriorated. When the concn. of the polyol is <0.2%, the dissociation inhibiting effect is not satisfactorily produced, and in case of >10%, the resist dissolving effect is excessively enhanced. When the concn. of the solvent is <0.001%, a synergistic effect on development is not produced, and in case of >0.1%, the resist dissolving effect is excessively enhanced. By the specified contents, the rate of development is changed even after projection exposure on a reduced scale and dimensional accuracy and dimensional stability are improved.
JP590186A 1986-01-14 1986-01-14 Organic alkali developing solution for positive type photoresist Pending JPS6419344A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP590186A JPS6419344A (en) 1986-01-14 1986-01-14 Organic alkali developing solution for positive type photoresist
JP3518087A JPS63259560A (en) 1986-01-14 1987-02-17 Organic alkali developer for positive type photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP590186A JPS6419344A (en) 1986-01-14 1986-01-14 Organic alkali developing solution for positive type photoresist

Publications (1)

Publication Number Publication Date
JPS6419344A true JPS6419344A (en) 1989-01-23

Family

ID=11623796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP590186A Pending JPS6419344A (en) 1986-01-14 1986-01-14 Organic alkali developing solution for positive type photoresist

Country Status (1)

Country Link
JP (1) JPS6419344A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03223867A (en) * 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd Pattern forming method
JPH04343360A (en) * 1991-05-21 1992-11-30 Toray Ind Inc Developer for planographic printing plate requiring no dampening water
US5863710A (en) * 1997-06-05 1999-01-26 Tokyo Ohka Kogyo Co., Ltd. Developer solution for photolithographic patterning
WO2000055691A1 (en) * 1999-03-12 2000-09-21 Clariant International Ltd. Method for producing a pattern suitable for forming sub-micron width metal lines
KR101012237B1 (en) * 2003-07-11 2011-02-08 미츠비시 가스 가가쿠 가부시키가이샤 Resist developing composition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03223867A (en) * 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd Pattern forming method
JPH04343360A (en) * 1991-05-21 1992-11-30 Toray Ind Inc Developer for planographic printing plate requiring no dampening water
US5863710A (en) * 1997-06-05 1999-01-26 Tokyo Ohka Kogyo Co., Ltd. Developer solution for photolithographic patterning
WO2000055691A1 (en) * 1999-03-12 2000-09-21 Clariant International Ltd. Method for producing a pattern suitable for forming sub-micron width metal lines
US6372414B1 (en) 1999-03-12 2002-04-16 Clariant Finance (Bvi) Limited Lift-off process for patterning fine metal lines
KR101012237B1 (en) * 2003-07-11 2011-02-08 미츠비시 가스 가가쿠 가부시키가이샤 Resist developing composition

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