KR100593653B1 - 1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법 - Google Patents

1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법 Download PDF

Info

Publication number
KR100593653B1
KR100593653B1 KR1020017011527A KR20017011527A KR100593653B1 KR 100593653 B1 KR100593653 B1 KR 100593653B1 KR 1020017011527 A KR1020017011527 A KR 1020017011527A KR 20017011527 A KR20017011527 A KR 20017011527A KR 100593653 B1 KR100593653 B1 KR 100593653B1
Authority
KR
South Korea
Prior art keywords
substrate
photoresist layer
aqueous alkaline
photoresist
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020017011527A
Other languages
English (en)
Korean (ko)
Other versions
KR20010113735A (ko
Inventor
레드랜디디
대멀랠프알
새건존피
스팩마크에이
Original Assignee
클래리언트 파이낸스(비브이아이)리미티드
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 클래리언트 파이낸스(비브이아이)리미티드, 모토로라 인코포레이티드 filed Critical 클래리언트 파이낸스(비브이아이)리미티드
Publication of KR20010113735A publication Critical patent/KR20010113735A/ko
Application granted granted Critical
Publication of KR100593653B1 publication Critical patent/KR100593653B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Catalysts (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Load-Engaging Elements For Cranes (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating With Molten Metal (AREA)
KR1020017011527A 1999-03-12 2000-03-03 1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법 Expired - Fee Related KR100593653B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/268,438 1999-03-12
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines
PCT/EP2000/001831 WO2000055691A1 (en) 1999-03-12 2000-03-03 Method for producing a pattern suitable for forming sub-micron width metal lines

Publications (2)

Publication Number Publication Date
KR20010113735A KR20010113735A (ko) 2001-12-28
KR100593653B1 true KR100593653B1 (ko) 2006-06-30

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017011527A Expired - Fee Related KR100593653B1 (ko) 1999-03-12 2000-03-03 1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법

Country Status (11)

Country Link
US (1) US6372414B1 (enExample)
EP (1) EP1166182B1 (enExample)
JP (1) JP4495863B2 (enExample)
KR (1) KR100593653B1 (enExample)
CN (1) CN1175320C (enExample)
AT (1) ATE310975T1 (enExample)
DE (1) DE60024244T2 (enExample)
HK (1) HK1044824B (enExample)
MY (1) MY122595A (enExample)
TW (1) TW548515B (enExample)
WO (1) WO2000055691A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
WO2004101174A1 (ja) * 2003-05-19 2004-11-25 Taiyo Ink Mfg. Co., Ltd. レリーフイメージの形成方法およびそのパターン形成物
US7658860B2 (en) * 2004-01-15 2010-02-09 Panasonic Corporation Metal pattern and process for producing the same
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
JP2002539505A (ja) 2002-11-19
US6372414B1 (en) 2002-04-16
CN1175320C (zh) 2004-11-10
DE60024244T2 (de) 2006-08-03
KR20010113735A (ko) 2001-12-28
DE60024244D1 (de) 2005-12-29
CN1343326A (zh) 2002-04-03
ATE310975T1 (de) 2005-12-15
TW548515B (en) 2003-08-21
EP1166182B1 (en) 2005-11-23
WO2000055691A1 (en) 2000-09-21
HK1044824B (zh) 2005-04-08
EP1166182A1 (en) 2002-01-02
MY122595A (en) 2006-04-29
HK1044824A1 (en) 2002-11-01
JP4495863B2 (ja) 2010-07-07

Similar Documents

Publication Publication Date Title
US3982943A (en) Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
EP0221093B1 (en) Double layer photoresist technique for side-wall profile control in plasma etching processes
EP0230615A2 (en) Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US4687730A (en) Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition
US7846623B2 (en) Resist pattern and reflow technology
JPH0620062B2 (ja) 半導体デバイスの製造方法
KR19990075991A (ko) 반도체 소자의 금속배선 형성방법
JPS5812344B2 (ja) 銅を基材とする金属パタ−ンの形成方法
JP3378055B2 (ja) 異方性液相光化学銅エッチング
JPH06204204A (ja) 異方性液相光化学エッチング方法
JP2001066767A (ja) レジスト組成物およびその使用
US7358111B2 (en) Imageable bottom anti-reflective coating for high resolution lithography
KR100593653B1 (ko) 1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법
CA1219835A (en) Metal/semiconductor deposition
US4202703A (en) Method of stripping photoresist
JP2004505319A (ja) 微細電子デバイスの製造方法
EP0058214B1 (en) Method for increasing the resistance of a solid material surface against etching
EP0198280A2 (en) Dry development process for metal lift-off profile
EP0015459B1 (en) Article comprising a negative x-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate) and method using this resist
KR100327771B1 (ko) 이온충격공정을견디기위해화학처리된포토레지스트
EP0104235A4 (en) METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS.
JPS62138843A (ja) 複合レジスト構造体
JPH02156244A (ja) パターン形成方法
JPS5857908B2 (ja) 薄膜構造体の形成方法
CA1260627A (en) Lithographic image size reduction photomask

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130531

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140529

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160517

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170621

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170621