TW548515B - Aqueous alkaline developer and use and preparation of the same - Google Patents
Aqueous alkaline developer and use and preparation of the same Download PDFInfo
- Publication number
- TW548515B TW548515B TW089104373A TW89104373A TW548515B TW 548515 B TW548515 B TW 548515B TW 089104373 A TW089104373 A TW 089104373A TW 89104373 A TW89104373 A TW 89104373A TW 548515 B TW548515 B TW 548515B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- aqueous alkaline
- scope
- alkyl ether
- item
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 17
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 14
- -1 alkylene glycol alkyl ether Chemical class 0.000 claims abstract description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 13
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical group COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 150000005215 alkyl ethers Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- WRPXVWRFEGPZLW-UHFFFAOYSA-N 1-(9h-fluoren-1-yloxy)propan-2-ol Chemical group C1C2=CC=CC=C2C2=C1C(OCC(O)C)=CC=C2 WRPXVWRFEGPZLW-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 1
- 125000002947 alkylene group Chemical group 0.000 claims 1
- 150000002009 diols Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 20
- 239000000243 solution Substances 0.000 description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000072 bismuth hydride Inorganic materials 0.000 description 1
- BPBOBPIKWGUSQG-UHFFFAOYSA-N bismuthane Chemical compound [BiH3] BPBOBPIKWGUSQG-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- KNCYXPMJDCCGSJ-UHFFFAOYSA-N piperidine-2,6-dione Chemical compound O=C1CCCC(=O)N1 KNCYXPMJDCCGSJ-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Catalysts (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Coating With Molten Metal (AREA)
- Load-Engaging Elements For Cranes (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/268,438 US6372414B1 (en) | 1999-03-12 | 1999-03-12 | Lift-off process for patterning fine metal lines |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548515B true TW548515B (en) | 2003-08-21 |
Family
ID=23023010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089104373A TW548515B (en) | 1999-03-12 | 2000-04-13 | Aqueous alkaline developer and use and preparation of the same |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6372414B1 (enExample) |
| EP (1) | EP1166182B1 (enExample) |
| JP (1) | JP4495863B2 (enExample) |
| KR (1) | KR100593653B1 (enExample) |
| CN (1) | CN1175320C (enExample) |
| AT (1) | ATE310975T1 (enExample) |
| DE (1) | DE60024244T2 (enExample) |
| HK (1) | HK1044824B (enExample) |
| MY (1) | MY122595A (enExample) |
| TW (1) | TW548515B (enExample) |
| WO (1) | WO2000055691A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0213695D0 (en) * | 2002-06-14 | 2002-07-24 | Filtronic Compound Semiconduct | Fabrication method |
| WO2004101174A1 (ja) * | 2003-05-19 | 2004-11-25 | Taiyo Ink Mfg. Co., Ltd. | レリーフイメージの形成方法およびそのパターン形成物 |
| ATE460830T1 (de) * | 2004-01-15 | 2010-03-15 | Panasonic Corp | Struktur und prozess zu ihrer herstellung |
| JP2005353763A (ja) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
| JP4793927B2 (ja) * | 2005-11-24 | 2011-10-12 | 東京エレクトロン株式会社 | 基板処理方法及びその装置 |
| KR100817101B1 (ko) * | 2007-04-04 | 2008-03-26 | 한국과학기술원 | 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법 |
| CN109406586A (zh) * | 2017-08-18 | 2019-03-01 | 蓝思科技（长沙）有限公司 | 碳纳米管传感器的制作方法及其用途 |
| CN111522208A (zh) * | 2020-05-06 | 2020-08-11 | 南京南大光电工程研究院有限公司 | 使用正胶做掩膜进行金属薄膜剥离的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961100A (en) * | 1974-09-16 | 1976-06-01 | Rca Corporation | Method for developing electron beam sensitive resist films |
| JPS6032047A (ja) * | 1983-08-02 | 1985-02-19 | Matsushita Electric Ind Co Ltd | 微細加工方法 |
| JPH063549B2 (ja) | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
| JPS6419344A (en) | 1986-01-14 | 1989-01-23 | Sumitomo Chemical Co | Organic alkali developing solution for positive type photoresist |
| DE3705896A1 (de) * | 1986-02-24 | 1987-08-27 | Tokyo Ohka Kogyo Co Ltd | Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel |
| US5069996A (en) * | 1989-07-24 | 1991-12-03 | Ocg Microelectronic Materials, Inc. | Process for developing selected positive photoresists |
| US5236810A (en) * | 1989-10-03 | 1993-08-17 | Kansai Paint Co., Ltd. | Process for preparing printed-circuit board |
| US5436114A (en) * | 1989-12-06 | 1995-07-25 | Hitachi, Ltd. | Method of optical lithography with super resolution and projection printing apparatus |
| US5252436A (en) | 1989-12-15 | 1993-10-12 | Basf Aktiengesellschaft | Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds |
| JPH03235322A (ja) * | 1990-02-13 | 1991-10-21 | Nec Corp | レジストパターン形成方法 |
| JP3235322B2 (ja) | 1994-02-04 | 2001-12-04 | 株式会社デンソー | ドア装置 |
| JPH09147429A (ja) * | 1995-11-20 | 1997-06-06 | Sony Corp | スタンパの製造方法 |
| JP2950407B2 (ja) * | 1996-01-29 | 1999-09-20 | 東京応化工業株式会社 | 電子部品製造用基材の製造方法 |
-
1999
- 1999-03-12 US US09/268,438 patent/US6372414B1/en not_active Expired - Lifetime
-
2000
- 2000-03-03 CN CNB008049254A patent/CN1175320C/zh not_active Expired - Lifetime
- 2000-03-03 KR KR1020017011527A patent/KR100593653B1/ko not_active Expired - Fee Related
- 2000-03-03 HK HK02106388.5A patent/HK1044824B/zh not_active IP Right Cessation
- 2000-03-03 JP JP2000605859A patent/JP4495863B2/ja not_active Expired - Lifetime
- 2000-03-03 EP EP00907663A patent/EP1166182B1/en not_active Expired - Lifetime
- 2000-03-03 WO PCT/EP2000/001831 patent/WO2000055691A1/en not_active Ceased
- 2000-03-03 AT AT00907663T patent/ATE310975T1/de not_active IP Right Cessation
- 2000-03-03 DE DE60024244T patent/DE60024244T2/de not_active Expired - Lifetime
- 2000-03-10 MY MYPI20000931A patent/MY122595A/en unknown
- 2000-04-13 TW TW089104373A patent/TW548515B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1343326A (zh) | 2002-04-03 |
| JP2002539505A (ja) | 2002-11-19 |
| DE60024244T2 (de) | 2006-08-03 |
| EP1166182A1 (en) | 2002-01-02 |
| HK1044824B (zh) | 2005-04-08 |
| KR100593653B1 (ko) | 2006-06-30 |
| US6372414B1 (en) | 2002-04-16 |
| KR20010113735A (ko) | 2001-12-28 |
| WO2000055691A1 (en) | 2000-09-21 |
| HK1044824A1 (en) | 2002-11-01 |
| ATE310975T1 (de) | 2005-12-15 |
| JP4495863B2 (ja) | 2010-07-07 |
| DE60024244D1 (de) | 2005-12-29 |
| EP1166182B1 (en) | 2005-11-23 |
| MY122595A (en) | 2006-04-29 |
| CN1175320C (zh) | 2004-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7855038B2 (en) | Mask patterns for semiconductor device fabrication and related methods and structures | |
| US5707783A (en) | Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging | |
| TWI364890B (en) | Methods of fabricating metal contact structures for laser diodes using backside uv exposure | |
| JPS62232127A (ja) | 半導体デバイスの製造方法 | |
| JPH01137635A (ja) | 反応性イオン・エツチングによって基板材料にパターンを転写する方法 | |
| TWI736627B (zh) | 圖案之形成方法、及半導體之製造方法 | |
| TW548515B (en) | Aqueous alkaline developer and use and preparation of the same | |
| JP2001066767A (ja) | レジスト組成物およびその使用 | |
| CN108957958A (zh) | 微影图案化方法 | |
| KR940002549B1 (ko) | 레지스트 조성물과 패턴 형성방법 | |
| CN101930170B (zh) | 衬底的蚀刻方法 | |
| US20080203322A1 (en) | Resist collapse prevention using immersed hardening | |
| TW200403534A (en) | Method of manufacturing semiconductor device and method of forming pattern | |
| JP2901044B2 (ja) | 三層レジスト法によるパターン形成方法 | |
| TW449799B (en) | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby | |
| JP2663815B2 (ja) | レジストパターン形成方法 | |
| US3701659A (en) | Photolithographic masks of semiconductor material | |
| JPS62258449A (ja) | ２層レジスト像を作成する方法 | |
| JPS6057218B2 (ja) | 半導体装置の製造方法 | |
| JP2898725B2 (ja) | パターン形成方法 | |
| US20250244675A1 (en) | Patterning method and patterning device | |
| Radigan et al. | Evolution of MIMMI: a novel surface imaging resist based on metallic surface imaging of organic photoresists | |
| JP3563138B2 (ja) | 感光性樹脂組成物を用いたパターン形成方法 | |
| JPS62247523A (ja) | 半導体装置の製造方法 | |
| JP2713061B2 (ja) | レジストパターンの形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |