CN1173550A - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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CN1173550A
CN1173550A CN97115408A CN97115408A CN1173550A CN 1173550 A CN1173550 A CN 1173550A CN 97115408 A CN97115408 A CN 97115408A CN 97115408 A CN97115408 A CN 97115408A CN 1173550 A CN1173550 A CN 1173550A
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石田敏道
山田雄一郎
滝泽贵博
田辺浩
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Abstract

本发明等离子体处理装置,包括减压室、一对面对面的电极、处理气体供给机构、高频电源以及对设置在一电极上被处理物进行加热的加热机构,另一电极侧由温度调节构件、兼作电极用气体喷出板、夹于此两者间的格子状传热构件构成,该传热构件具有使供给的处理气体均压化、从气体喷出孔喷出的气体均压化空间,具有能将电极用气体喷出板的热量传至温度调节构件、能不使电极兼用气体喷出板产生热变形、可对大型基板进行等离子体处理的效果。

Description

等离子体处理装置
本发明涉及用等离子CVD法即化学汽相沉积法进行在基板上形成薄膜的等离子体处理装置，特别涉及用等离子CVD法进行在液晶用玻璃基板等大型基板上形成薄膜的等离子体处理装置。
传统的用等离子CVD法进行在基板上形成薄膜的等离子体处理装置的结构表示在后述图6中，在从真空排气口12进行真空排气的室1的内部的下部具有电气接地的下部电极4，在此下部电极4内设置可加热至例如约400℃的加热器3，将玻璃等组成的基板2载放在所述下部电极4上、且可被加热至规定温度。
室1的上部具有盖11，此盖11通过安装的绝缘体10，使兼作上部电极用的气体喷出板5位于上述下部电极4的上方，且保持与上述下部电极4平行。所述兼作上部电极用的气体喷出板5系由铝合金等构成，具有均匀分布的气体喷出孔5a。
在所述兼作上部电极用的气体喷出板5的上方设置被固定在安装在上述盖11上的上述绝缘体10上、为将处理气体导入的气体导入管6，在所述气体导入管6与所述兼作上部电极用的气体喷出板5间设置具有多个气体分散孔9a的气体分散板9，在所述气体分散板9与所述兼作上部电极用的气体喷出板间形成气体均压化空间9b、形成的气体均压化空间9b为使处理气体压力均匀，使处理气体从所述兼作上部电极用的气体喷出板5的多个气体喷出孔5a均匀地喷出。
高频电源8通过调整阻抗的耦合器7与上述气体导入管6、气体分散板9以及兼作上部电极用的气体喷出板5连接。
在进行等离子体处理时，当一面从兼作上部电极用的气体喷出板5将SiH4、NH3、N2、H2等处理气体喷出，一面通过高频电源8将高频电压加在兼作上部电极用的气体喷出板上时，在所述兼作上部电极用气体喷出板5与接地的下部电极4之间产生等离子、在基板2的表面上例如形成氮化膜等薄膜。
在上述传统结构中，在兼作上部电极用的气体喷出板5的下面的等离子发生面上为防止产生等离子时的异常放电而不能设置安装螺栓，此外，由于有必要形成为使处理气体均匀喷出的所述气体均压化空间9b，所述兼作上部电极用的气体喷出板5的中央附近的结构成为不能保持机械定形的结构。
此结构对于进行较小型基板的形成薄膜尚无问题，然而，近来要求增大形成薄膜的基板尺寸，因而有必要提供能对大型基板进行等离子体处理的装置。
但是，在上述传统结构中，由于不能使兼作上部电极用的气体喷出板5接受的来自约400℃的下部电极4的辐射热、以及来自处理中的等离子的热从兼作上部电极用的气体喷出板5的周边缘散出，当兼作上部电极用的气体喷出板5增大到一定程度以上，使在兼作上部电极用的气体喷出板5的中央附近因热量不能散出而温度上升至200-300℃，中央附近与周边缘部的温度差变大，因热膨胀率的不同而存在使兼作上部电极用的气体喷出板5产生变形、膨出的问题。当发生兼作上部电极用的气体喷出板5产生弯形、膨出时，使下部电极4与兼作上部电极用的气体喷出板5间的电极间的距离发生变化，从而产生在基板1上堆积的薄膜厚度以及薄膜特性均匀性低的问题。
本发明为了解决上述问题，目的在于提供使兼作上部电极用的气体喷出板不产生热变形，能进行大型基板的等离子体处理的等离子体处理装置。
为解决上述课题的本发明等离子体处理装置包括：容纳需进行等离子体处理的被处理物的减压的室；位于所述室内，为使供给的处理气体等离子化、处于面对面的一对电极；与所述面对面的一对电极中的一电极相连的处理气体供给机构与高频电源；以及设置在另一电极上，对上述被处理物进行加热的加热机构，其特点是，具有所述处理气体供给机构与高频电源的电极一侧由具有温度调节机构的温度调节构件，具有按等间隔形成多个气体喷出孔的兼作电极用的气体喷出板，以及夹于上述两者间的格子状传热构件来构成，该传热构件系为使从上述处理气体供给机构供给的处理气体均压化，按照格子状形成多个使从上述兼作电极用的气体喷出板喷出的气体均压化的空间，同时，能将所述兼作电极用的气体喷出板的热量传至上述温度调节构件上的格子状传热构件。
据此，本发明等离子体处理装置在兼作电极用的气体喷出板大型化并进行较大基板的等离子体处理场合，由于能使处理气体均匀地从所述兼作电极用的气体喷出板喷出，且通过格子状传热构件能将上述兼作电极用的气体喷出板的热量传递到温度调节构件上，使所述兼作电极用的气体喷出板的温度上升变小，能抑制上述兼作电极用的气体喷出板因热膨胀、膨出而引起的面对面电极间距离不均匀，能在大基板上形成厚度与特性均匀的薄膜。
此外，本发明等离子体处理装置，由于将格子状传热构件构成在格子状构件整体的中心部具有接受处理气体的气体入口，将格子状传热构件的多个气体均压化空间构成以格子状构件的全体中心部为对称中心，具有相同形状的空间，能使兼作电极用的气体喷出板的温度上升变小，能更进一步抑制因兼作电极用的气体喷出板的热膨胀、膨出引起的面对面电极间距离的不均匀，从而能进一步提高在大型基板上形成厚度与特性均均的薄膜的效果。
对附图的简单说明。
图1为表示本发明等离子体处理装置一实施例结构的侧剖视图，
图2为表示本发明等离子体处理装置一实施例的主要部分的分解立体图，
图3为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图4为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图5为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图6为表示传统等离子体处理装置结构的侧剖视图。
现参照附图1-5对本发明等离子体处理装置一实施例进行说明。
图1中，将内设加热器3、铸造铝合金制的下部电极4配置在从真空排气口12进行真空排气的室1的下部，且使其电气接地、把由玻璃等构成的基板2载放在此下部电极4上。此下部电极4具有由工作缸等(未图示)的驱动机构产生的升降功能。下部电极4因内设的加热器3、例如被加热至约为400℃，将载放的基板2加热至规定温度。
在室1的上部具有在其中央部形成开口部的上盖11，上盖11用第4螺栓30d且通过绝缘体10a、10b、10c使温度调节板106a、形状为格子状、在该格子间的空间形成气体均压化空间109a的传热构件109，以及其上具有多个气体喷出孔105a的兼作上部电极用的气体喷出板105保持固定。
现根据附图1-5对上述温度调节板106a、传热构件109、兼作上部电极用的气体喷出板105的详细结构和安装方法进行说明。
在具体表示的图2-5中，在铝合金制的兼作上部电极用的气体喷出板105上按等间隔设置为使处理气体均匀喷出的多个气体喷出孔105a。为使处理气体均匀地从这些等间隔的多个气体喷出孔105a喷出，需要在兼作上部电极用的气体喷出板105的上侧空间形成气体均压化空间109a，此外，为了不使在兼作上部电极用的气体喷出板105的中央部与其周边缘部间产生温度差，需要能使热量从兼作上部电极用的气体喷出板105的中央部散出，以下所示的传热构件109与温度调节板106a就是为满足这些必要性而设置的。
在图2-5中，铝合金制的传热构件109由传递来自兼作上部电极用的气体喷出板105的周边缘部热量的框部109b与传递来自兼作上部电极用的气体喷出板105的中央部热量的格子形状部109c组成。在所述框部109b与格子形状部109c间的空间构成气体均压化空间109a。并且，把传热构件109的中央作为点对称中心、将格子形状部109c形成点对称形的多个形状相同的气体均匀化空间109a，把传热构件109的上述中央部的对称中心作为气体入口106d的中心，当向各气体均压化空间109a供给处理气体时，使处理气体的压力达到均压化、从上述多个气体喷出孔105a均匀喷出处理气体。在此场合，如图3-图5所示，在气体喷出孔105a与传热构件109的格子形状部109c相重叠的部分设置作为处理气体通路的气体通过槽109d、这样，即使存在格子形状部109c，也能在兼作上部电极用的气体喷出板105的全面上按等间隔设置气体喷出孔105a。
在图1-5中，用第4螺栓30d、通过绝缘体10a、10b将铝合金制的温度调节板106a安装在上盖11的开口部的下侧。此外，温度调节板106a具有冷却水路106b，使从具有加热器与冷却机构的恒温循环槽106c来的冷却水经此冷却水路106b循环、例如，能将其维持在约80℃的规定温度。此外，将气体导入管106安装在温度调节板106a的中央部上，从此气体导入管106向上述传热构件109的中央部的气体入口106d供给处理气体。
接着，参照图1-5说明温度调节板106a与传热构件109以及兼作上部电极用的气体喷出板105的安装方法。
图1-5中，用第2螺栓30b、且利用设置在传热构件109上的通孔32b、设置在兼作上部电极用的气体喷出板105上的螺孔33b进行传热构件109与兼作上部电极用的气体喷出板105的固定。用此固定、成为使在兼作上部电极用的气体喷出板105上产生的热量不仅从其周边缘部、且大致从其全面传递到传热构件109。在此场合，不使螺孔33b穿通至兼作上部电极用的气体喷出板105的下面。
如上所述，在图1-5中，用第4螺栓30d，且通过绝缘体10a、10b将温度调节板106a安装在上盖11的开口部的下侧。在此场合，用第一O型圈31a确保室1的内部与外界间的气密性。
在图1-5中，用第1螺栓30a、且利用设置在温度调节板106a的中央部附近的通孔32a与设置在传热构件109的中央部附近的螺孔33a把如上所述用第2螺栓30b进行固定、兼作上部电极用的气体喷出板105与传热构件109固定在温度调节板106a上，进而，用第3螺栓30c、且利用设置在传热构件109的周边缘部上的通孔32c和设置在温度调节板106a的周边缘部上的螺孔(未图示)将传热构件109固定在温度调节板106a上、从而，使在兼作上部电极用的气体喷出板105上产生的热量通过传热构件109充分地传至温度调节板106a上。在此场合，用第二O型圈31b确保室1的内部与外界的气密性。在此状态，成为从气体导入管106向气体入口106d供给处理气体。
接着，用绝缘体10c和接地的铝合金制的保持器具10d对上述外周进行保持。
根据上述，即使兼作上部电极用的气体喷出板105接受来自约400℃的下部电极4的辐射热量以及来自发生等离子的热量，由于能将这些热量通过传热构件109向约为80℃的温度调节板106a上散出，维持约为100℃，而不发生热变形，即使对于大型基板，也能形成厚度与特性都均匀的薄膜。
此外，本实施例的结构材料使用了铝合金，然而也可以使用纯铝、即使是不锈钢等其它金属也具有同样效果。
根据本发明的等离子体处理装置，即使对于大型化的兼作上部电极用的气体喷出板，也能使处理气体从上述兼作上部电极用的气体喷出板均匀地喷出，且用传热构件防止上述兼作上部电极用的气体喷出板温度上升以及因温度上升引起的变形，具有对于被处理的大型基板，可获得形成膜厚与膜特性都均匀的薄膜的效果。

Claims (4)

1.一种等离子体处理装置，包括：容纳需进行等离子体处理的被处理物的减压的室；位于所述室内，为使供给的处理气体等离子化、处于面对面的一对电极；与所述面对面的一对电极的一电极相连的处理气体供给机构与高频电源；以及设置在另一电极上、对上述被处理物进行加热的加热机构，其特征在于，具有所述处理气体供给机构与高频电源的电极一侧由具有温度调节机构的温度调节构件、具有按等间隔形成多个气体喷出孔的兼作电极用的气体喷出板，以及夹于上述两者间的格子状传热构件构成，所述传热构件系为使从上述处理气体供给机构供给的处理气体均压化、按格子状形成多个使从上述兼作电极用的气体喷出板喷出的气体均压化的空间，同时，能将上述兼作电极用的气体喷出板的热量传至上述温度调节构件上的格子状传热构件。
2.根据权利要求1所述的装置，其特征在于，在所述格子状传热构件的格子状构件的整体的中心部设置接受处理气体的气体入口。
3.根据权利要求1所述的装置，其特征在于，在格子状传热构件的接近兼作电极用的气体喷出板的气体喷出孔的格子状部分上具有与该气体喷出孔相通的气体通过槽。
4.根据权利要求1所述的装置，其特征在于，所述格子状传热构件上形成的多个气体均压化空间为以格子状构件整体的中心为对称中心具有相同形状的空间。
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JP3310171B2 (ja) 2002-07-29
JPH1030185A (ja) 1998-02-03
US5766364A (en) 1998-06-16
KR980011808A (ko) 1998-04-30
MY118240A (en) 2004-09-30

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