1284367 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關一種藉由電感耦合電漿在液晶顯示裝置 (L C D )基板等的被處理基板上進行乾蝕刻等的電發處理 之電感耦合電漿處理裝置。 【先前技術】 例如，在LCD的製程中，對於被處理基板即LCD玻 璃基板多使用蝕刻、漸鍍、CVD (化學氣相成長）法等的 電漿處理。 雖使用各種電漿處理法進行電漿處理的電漿處理裝置 ，惟其中已知可產生高密度電漿者爲電感耦合電漿（ICP )處理裝置。 電感耦合電漿處理裝置係典型以介電體壁構成有用以 進行可真空保持的電漿處理之處理室的天井，並於其上配 設有射頻（RF )。然後，藉由對該射頻供給高頻電力， 在處理室內形成有電感電場，藉由該電感電場使導入至處 理室的處理氣體電漿化，藉由這種方法形成的處理氣體之 電漿進行蝕刻等的電漿處理。 然而，在LCD的製程中，被處理基板即LCD玻璃基 板係形成由一片至複數片的LCD面板產品所獲得的尺寸 。然後，最近從提昇產率的觀點來看，LCD玻璃基板大型 化的需求增強，而要求一邊超過lm的巨大基板，隨著處 理裝置的大型化亦使得介電體壁大型化。令介電體壁大型 -4- (2) 1284367 化時’爲了保持處理室的內外壓力差或承受自身重量的強 度，必須加厚其厚度，當介電體壁加厚時，由於射頻與電 漿區域之距離變大，而使能量效果降低，使電漿密度降低 。又，如此，當加厚介電體壁的厚度時，介電體壁之價格 昂貴。 爲避免這種情況而提案有特開200 1 -2 8299號所示的 技術。該技術係藉由分隔構造將電感耦合電漿處理裝置的 本體容器區隔爲上側的天線室與下側的處理室，分隔構造 爲包含介電體壁的構造，以十字狀的支持粱支持該介電體 壁，並採用藉由將該支持梁固定在天線室的天井之懸掛構 件懸掛的構造。藉此，由於施加在介電體壁的荷重明顯降 低，故可使介電體壁變薄。 【發明內容】. 〔發明所欲解決之課題〕 然而，在上述特開200 1 _28299號所揭示的技術中， 由於係以支持梁支持介電體壁且以懸掛構件懸掛支持梁之 構造，因此爲使分隔構造的一部份即支持樑不撓曲，必須 加寬支持樑的寬度，而加寬支持樑的寬度時，將使介電體 壁的有效面積變窄，導致能量效率降低。 本發明係有鑑於上述課題而硏創者，目的在於提供一 種不須加大介電體壁的支持部分，且不須加厚介電體壁， 可控制分隔包含介電體壁之處理室與天線室之間的分隔構 造之撓曲之電感耦合電漿處理裝置。 -5- (3) 1284367 〔用以解決課題之手段〕 爲解決上述課題，本發明係提供一種電感耦合電漿裝 置，其特徵在於具有以下構件：氣密保持且在被處理基板 進行電漿處理之處理室；在上述處理室內供給處理氣體之 處理氣體供給系統；排出上述處理室內的氣體，使上述處 理室內成爲減壓狀態之排氣系統；構成上述處理室的上部 壁之介電體壁；設置在上述介電體壁上方藉由供給高頻電 力，在上述處理室內形成電感電場之射頻；設置於上述處 理室的上方，並藉由上述介電體壁形成底壁，收容上述射 頻之天線室；將上述天線室分隔爲複數個小室，並支持於 上述天線室的側壁之垂直壁，上述介電體壁係與上述複數 個小室對應分割爲複數，上述介電體壁的各分割片係以上 述天線室的側壁與上述垂直壁予以支持。 根據本發明，藉由天線室的側壁所支持的垂直壁將藉 由介電體壁形成有底壁的天線室分隔爲複數個小室，使介 電體壁與複數個小室對應分割爲複數個，介電體壁的各分 割片以上述天線室的側壁與上述垂直壁加以支持，由於垂 直的壁爲支持要素，因此不須加寬介電體壁的支持部分， 且不須加厚介電體壁，可防止分隔包含介電體壁之處理室 與天線室之間的分隔構造之撓曲。 在本發明中，上述射頻係具有分別收容在上述複數個 小室的複數個天線片之構造，從一個高頻電源對上述射頻 供給高頻電力亦可，使上述射頻係與上述複數個小室對應 具有複數個，且具有分別對複數個射頻供給高頻電力之複 -6 - (4) 1284367 數個高頻電源亦可。 又，係舉出上述垂直壁係以十字狀分隔上述天線室， 並分割爲四個小室作爲典型例。 【實施方式】 以下，參照添附圖面說明本發明之實施形態。第1圖 係本發明之一實施形態的電感耦合電漿蝕刻裝置的垂直剖 面圖，第2圖係其天線室的水平剖面圖。該裝置係例如在 LCD製造時，在LCD玻璃基板上形成薄膜電晶體之際， 用於蝕刻金屬膜、ITO膜、氧化膜等。 該電漿蝕刻裝置係具有導電性材料，例如內壁面經陽 極化處理的鋁或由鋁合金構成的角筒形狀之氣密性本體容 器1。本體容器1係以可分解方式組裝，藉由接地線1 a 接地。本體容器1係藉由介電體壁2上下區劃爲天線室3 及處理室4。因而，介電體壁2係構成處理室4的天井壁 。介電體壁2係以Al2〇3等陶瓷、石英等構成。 本體容器1的天線室3係以分別支持於相對向的兩對 側壁3a之方式設置有形成十字狀的兩片垂直壁5。因而 ，天線室3係藉由兩片的垂直壁5分割爲4個小室6。在 側壁3a及垂直壁5的底部設置有支持棚7,將介電體壁2 分割爲4個的分割片2a係分別載置於小室6的支持棚7 上。在介電體壁2的各分割片2a與支持棚7之間介裝有 封條8且氣密性地密封，並以保持器9加以固定。此外， 垂直壁5係與本體容器1相同，例如形成表面經陽極氧化 (5) 1284367 處理的鋁或鋁合金。 天線室3的天壁3b中央形成有氣體導入口 11。然後 ，如第3圖所示，從兩片垂直壁5所交叉的交叉部5a上 端使連續至氣體導入口 1 1的氣體流路1 2延伸到下方。繼 而，氣體流路1 2係具備有：在交叉部5 a的下部沿著垂直 壁水平且十字狀延伸之水平流路1 2a ;從該十字狀的水平 流路12a延伸至下方的複數個垂直流路12b，在垂直壁5 的底部形成氣體吐出口 13。因而，複數個氣體吐出口 13 係以十字狀配列，在此以噴霧狀將特定的處理氣體噴出。 另外，在氣體導入口 11以與氣體流路12連通的方式 設置有氣體供給管14。氣體供給管14係從本體容器1的 天井貫通至其外側，與包含處理氣體供給源及閥門系統等 的處理氣體供給系統20連接。因而，在進行電漿蝕刻時 ，從處理氣體供給系統20供給的處理氣體經由氣體供給 管1 4供給至氣體流路1 2，再通過水平流路1 2a及垂直流 路12b，從設置在垂直壁5底部之氣體吐出口 13吐出至 處理室4內，且對處理室4內所配置的LCD玻璃基板G 上形成的特定膜進行蝕刻。 在天線室3內配設有射頻1 5。具體而言，射頻1 5係 分割爲四個天線片1 5 a，上述天線片1 5 a以在天線室3的 各小室6內與介電體壁2相對的方式配設。該射頻片1 5a 由形成大致角形漩渦狀的平面型之線圈天線所構成，相鄰 接的天線片係彼此逆向捲繞天線線。上述天線片1 5 a係一 端從天線室3的各小室6與垂直延伸於上方之給電棒1 6 -8- (6) 1284367 連接，另一端與本體容器1連接，並經由本體容器1接地 〇 在天線室3的天壁3b上設置有將電漿的阻抗整合在 高頻的傳送路阻抗之整合器1 7，上述各給電棒1 6的上端 與該整合器17連接。另外，整合器17係設置有電感電場 形成用之例如頻率13.56MHz的高頻電源18。 在進行電漿處理中，從高頻電源1 8將電感電場形成 用之例如頻率13.56MHz的高頻電力供給至射頻15。如此 ，藉由被供給高頻電力的射頻15在處理室4內形成有電 感電場，藉由該電感電場，電漿化從處理氣體供給系統 20經過氣體供給管14、氣體流路12再從氣體吐出口 13 吐出的處理氣體。此時的高頻電源18之輸出係適當設定 在可產生電漿的足夠値。 在處理室4內的下方設置有挾住介電體壁2，且與射 頻15相對向用以載置LCD基板G的載置台之基座22。 基座22係以導電性材料例如表面經陽極氧化處理的鋁所 構成。在基座22所載置的LCD玻璃基板G係藉由靜電夾 頭（未圖示）吸附保持於基座22。 基座22係收納在絕緣體框24內，亦支持於中空的支 柱25。支柱25係貫通本體容器1的底部且維持氣密狀態 ，並支持本體容器1外所配設的升降機構（未圖示），在 搬入搬出基板G時藉由昇降機構在上下方向驅動基座22 。此外，在收納基座22的絕緣體框24與本體容器1的底 部之間配設有氣密包圍住支柱25的波形管26，藉以保證 -9- (7) 1284367 即使基座22上下晃動亦可保持處理容器4內的氣密性。 又，在處理室4的側壁4a設置有用以搬入搬出基板G的 搬入搬出口 27，該搬入搬出口 27藉由閥門27a進行開關 作業。 基座2 2係藉由中空的支柱2 5內所設置的給電棒2 5 a 經由整合器28連接有高頻電源29。該高頻電源29係在 電漿處理中對基座22施加例如頻率爲3·2ΜΗζ的高頻電 力。藉由該偏壓用的高頻電力有效地將處理室4內所生成 的電漿中之離子有效引入基板G。 再者，爲了在基座22內控制基板G的溫度，設置有 由陶瓷加熱器等的加熱手段或冷煤流路等所構成的溫度控 制機構與溫度感測器（皆未圖示）。與上述機構或構件相 對的配管或配線透過任一中空的支柱25導出至本體容器 1外。 在處理室4的底部經由排企管31連接包含真空汞浦 等的排氣機構3 0，藉由該排氣機構3 0排出處理室4內的 氣體，在進行電漿處理時，將處理室4內設定維持在特定 的真空環境（例如1.33Pa)。 繼而，使用以如上方法構成的電感耦合蝕刻裝置，說 明在LCD玻璃基板G施加電漿蝕刻處理之際的處理動作 〇 首先，在閘閥27a打開的狀態下藉由搬送機構（未圖 示）從搬入搬出口 27將基板G搬入至處理室4內，在載 置於基座22的載置面之後，藉由靜電夾頭（未圖示）將 -10- (8) 1284367 基板G固定在基座22上。然後，在處理室4內使從處理 氣體供給系統2 0供給的處理氣體經由氣體供給管1 4、氣 體流路12再從氣體吐出口 13吐出至處理室4內，並且藉 由排氣機構3 0經由排氣管3 1在處理室·4內進行真空排氣 ，將處理室4內維持在例如1.3 3 Pa左右的壓力環境。 然後，從高頻電源1 8經由整合器1 7及給電棒1 6將 13·56ΜΗζ的高頻施加在射頻15的各天線片15a，藉此經 由介電體壁2在處理室4內形成均勻的電感電場。藉由以 此方法形成的電感電場在處理室4內電漿化處理氣體，並 且生成高密度的電感耦合電漿。以如此方法生成的電漿中 之離子係藉由從高頻電源29對基座22施加的3.2MHz之 高頻電力有效地被拉進基板G，可對基板G施加均勻的蝕 刻處理。 此時，分別支持於藉由介電體壁2形成有底壁的天線 室3之相對向的兩對側壁3a，且設置有構成十字狀的兩 片垂直壁5，藉由垂直壁5將天線室3分隔爲4個小室， 使介電體壁2與複數個小室對應而分割爲複數，並以天線 室3的側壁3a與垂直壁5支持介電體壁2的各分割片2a ，由於支持要素爲垂直的壁，因此不須加寬介電體壁2的 支持部分，且不須加厚介電體壁2，可防止分隔包含介電 體壁2之處理室4與天線室3之間的分隔構造之撓曲。 此外，本發明係不限定於上述實施形態，可進行種種 的變形。例如，在上述實施形態中，雖然從一個高頻電源 經由整合器對各小室6所配置的射頻1 5之各天線片1 5 a -11 - (9) 1284367 供電，但是如第4圖所示，在各小室6設置各自獨立的射 頻15’，與各射頻15’對應設置複數個整合器17’及高頻電 源1 8 ’亦可。 又，在上述實施形態中，雖以十字狀設置垂直壁，惟 如第5圖所示，亦可僅設置一片垂直壁5且將天線室3分 割爲二，又，如第6圖所示，亦可將垂直壁5平行配置複 數片，且分割天線室3。 再者，在上述實施形態中，雖表示將本發明應用在蝕 刻裝置之情況，惟不限定於應用在蝕刻裝置，亦可應用在 濺鍍、CVD成膜等其他的電漿處理裝置。然後，雖使用 LCD基板作爲被處理基板，惟本發明並不限定於此亦可應 用在處理半導體晶圓等其他基板之情況。 〔發明的功效〕 如以上所說明，根據本發明，係將藉由以介電體壁形 成有底壁的天線室之側壁所支持的垂直壁分割成複數個小 室，使介電體壁與複數個小室對應而分割爲複數，並以上 述天線室的側壁與上述垂直壁支持介電體壁的各分割片， 由於支持要素爲垂直的壁，因此不須加寬介電體壁的支持 部分，且不須加厚介電體壁，可防止分隔包含介電體壁之 處理室與天線室之間的分隔構造之撓曲。 【圖式簡要說明】 第1圖係本發明之一實施形態的電感耦合電漿蝕刻裝 -12 - 1284367 do) 置的垂直剖面圖。 第2圖係第1圖的電感耦合蝕刻裝置之天線室室的水 平剖面圖。 第3圖係第1圖的電感耦合蝕刻裝置之垂直壁的斜視 圖。 第4圖係本發明之其他實施形態的電感耦合電漿蝕刻 裝置的天線部分之槪略斜視圖。 第5圖係表示天線室的垂直壁之分隔狀態的其他例之 剖視圖。 第6圖係顯示天線室的垂直壁之分隔狀態又一例之水 平剖面圖。 〔元件符號說明〕 1 本體容器 2 介電體壁 2a 分割片 3 天線室 3 a 側壁 4 處理室 5 垂直壁 5a 交叉部 6 小室 7 支持棚 11 氣體導入口 -13- (11) 1284367 12 氣 體 流 路 13 氣 體 吐 出 □ 14 氣 體 供 給 管 15、 1 5 5 射 頻 15a 天 線 片 18 局 頻 電 源 20 處 理 氣 體 供給系統 22 基 座 30 排 氣 機 構 G LCD玻璃基板1284367 (1) Technical Field of the Invention The present invention relates to an inductor for performing an internal heat treatment such as dry etching on a substrate to be processed such as a liquid crystal display device (LCD) substrate by inductively coupling plasma. Coupling the plasma processing device. [Prior Art] For example, in the process of the LCD, plasma treatment such as etching, progressive plating, CVD (Chemical Vapor Phase Growth) or the like is often used for the substrate to be processed, that is, the LCD glass substrate. Although plasma processing devices for plasma treatment are used in various plasma treatment methods, those known to produce high-density plasma are inductively coupled plasma (ICP) processing devices. The inductively coupled plasma processing apparatus typically forms a patio of a processing chamber useful for vacuum-retainable plasma processing with a dielectric wall and is provided with radio frequency (RF). Then, by supplying high frequency power to the radio frequency, an inductive electric field is formed in the processing chamber, and the processing gas introduced into the processing chamber is plasmad by the inductive electric field, and the plasma of the processing gas formed by the method is performed. Plasma treatment such as etching. However, in the process of the LCD, the substrate to be processed, i.e., the LCD glass substrate, is formed in a size obtained from one sheet to a plurality of LCD panel products. Then, from the viewpoint of improving the yield, the demand for an increase in the size of the LCD glass substrate is increasing, and a large substrate exceeding one lm is required, and the size of the dielectric body is increased as the size of the processing device is increased. When the dielectric wall is large -4- (2) 1284367, in order to maintain the internal and external pressure difference of the processing chamber or to withstand the strength of its own weight, it must be thickened. When the dielectric wall is thickened, due to RF and electricity. The distance between the pulp regions becomes larger, and the energy effect is lowered to lower the plasma density. Also, as such, the dielectric wall is expensive when thickening the thickness of the dielectric body wall. In order to avoid this, the proposal has the technique shown in the special 200 1 - 2 8299. The technique divides the body container of the inductively coupled plasma processing apparatus into an upper antenna chamber and a lower processing chamber by a partition structure, and the partition structure is a structure including a dielectric body wall, and the support is supported by a cross-shaped support The dielectric body wall is constructed to be suspended by a suspension member that fixes the support beam to the patio of the antenna room. Thereby, since the load applied to the wall of the dielectric body is remarkably lowered, the wall of the dielectric body can be made thin. [Problem to be Solved by the Invention] However, in the technique disclosed in the above-mentioned Japanese Patent Publication No. 2001-28299, since the support beam supports the dielectric body wall and the support member is suspended by the suspension member, In order for the support structure to be undeflected, the width of the support beam must be widened, and widening the width of the support beam will narrow the effective area of the dielectric wall, resulting in reduced energy efficiency. The present invention has been made in view of the above problems, and an object of the present invention is to provide a processing chamber and an antenna for separating a dielectric body wall without increasing the support portion of the dielectric body wall and without thickening the dielectric body wall. Inductively coupled plasma processing apparatus for deflection of the separation structure between chambers. -5- (3) 1284367 [Means for Solving the Problems] In order to solve the above problems, the present invention provides an inductively coupled plasma device characterized by having the following members: airtightly held and plasma treated on a substrate to be processed a processing chamber for supplying a processing gas in the processing chamber; an exhaust system for discharging the gas in the processing chamber to decompress the processing chamber; and a dielectric wall constituting an upper wall of the processing chamber; Providing a radio frequency for forming an inductive electric field in the processing chamber by supplying high-frequency power over the dielectric body wall; being disposed above the processing chamber, and forming a bottom wall by the dielectric body wall to receive the radio frequency antenna Separating the antenna chamber into a plurality of small chambers and supporting the vertical walls of the side walls of the antenna chamber, wherein the dielectric body wall is divided into a plurality of the plurality of small chambers, and the divided pieces of the dielectric body wall The side wall of the antenna room is supported by the vertical wall. According to the present invention, the vertical wall supported by the side wall of the antenna chamber divides the antenna chamber formed with the bottom wall by the dielectric body into a plurality of cells, and divides the dielectric body wall into a plurality of cells corresponding to the plurality of cells. Each of the divided pieces of the dielectric body wall is supported by the side wall of the antenna chamber and the vertical wall. Since the vertical wall is a supporting element, it is not necessary to widen the supporting portion of the dielectric body wall, and it is not necessary to thicken the dielectric body wall. The deflection of the separation structure between the processing chamber containing the dielectric wall and the antenna chamber can be prevented from being separated. In the present invention, the radio frequency system has a structure in which a plurality of antenna sheets are respectively accommodated in the plurality of cells, and the high frequency power is supplied to the radio frequency from a high frequency power source, so that the radio frequency system has a plurality of cells corresponding to the plurality of cells. A plurality of high-frequency power sources can be supplied to a plurality of RF-powered high-frequency powers, respectively, -6 - (4) 1284367. Further, the vertical wall system is divided into four small chambers by dividing the antenna chamber in a cross shape as a typical example. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a vertical sectional view showing an inductively coupled plasma etching apparatus according to an embodiment of the present invention, and Fig. 2 is a horizontal sectional view showing an antenna chamber thereof. This device is used to etch a metal film, an ITO film, an oxide film, or the like, for example, when a thin film transistor is formed on an LCD glass substrate during LCD manufacturing. The plasma etching apparatus is made of a conductive material such as aluminum which is anisotropically treated on the inner wall surface or a gas-tight body container 1 which is formed of an aluminum alloy. The body container 1 is assembled in a decomposable manner and grounded by a grounding wire 1 a . The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2 up and down. Thus, the dielectric body wall 2 constitutes the patio wall of the processing chamber 4. The dielectric body wall 2 is made of ceramic such as Al 2 〇 3 or quartz. The antenna chamber 3 of the main body container 1 is provided with two vertical walls 5 forming a cross shape so as to be supported by the opposite pairs of side walls 3a, respectively. Thus, the antenna chamber 3 is divided into four cells 6 by two vertical walls 5 . A support shed 7 is provided at the bottom of the side wall 3a and the vertical wall 5, and the divided pieces 2a for dividing the dielectric wall 2 into four are respectively placed on the support shed 7 of the small chamber 6. A seal 8 is interposed between each of the divided pieces 2a of the dielectric body wall 2 and the support shed 7, and is hermetically sealed and fixed by a holder 9. Further, the vertical wall 5 is the same as the body container 1, for example, an aluminum or aluminum alloy whose surface is anodized (5) 1284367. A gas introduction port 11 is formed in the center of the sky wall 3b of the antenna chamber 3. Then, as shown in Fig. 3, the gas flow path 1 2 continuous to the gas introduction port 1 is extended downward from the upper end of the intersection portion 5a where the two vertical walls 5 intersect. Then, the gas flow path 12 is provided with a horizontal flow path 12a extending horizontally and in a cross shape along the vertical wall at a lower portion of the intersection portion 5a, and a plurality of vertical lines extending from the cross-shaped horizontal flow path 12a to the lower side. The flow path 12b forms a gas discharge port 13 at the bottom of the vertical wall 5. Therefore, a plurality of gas discharge ports 13 are arranged in a cross shape, and a specific process gas is sprayed in a spray form. Further, a gas supply pipe 14 is provided in the gas introduction port 11 so as to communicate with the gas flow path 12. The gas supply pipe 14 is connected from the ceiling of the main body container 1 to the outside thereof, and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, when plasma etching is performed, the processing gas supplied from the processing gas supply system 20 is supplied to the gas flow path 12 via the gas supply pipe 14, and then passes through the horizontal flow path 1 2a and the vertical flow path 12b from the vertical direction. The gas discharge port 13 at the bottom of the wall 5 is discharged into the processing chamber 4, and the specific film formed on the LCD glass substrate G disposed in the processing chamber 4 is etched. A radio frequency 15 is arranged in the antenna room 3. Specifically, the radio frequency 15 is divided into four antenna pieces 15 5 a, and the antenna piece 15 5 a is disposed so as to face the dielectric body wall 2 in each of the cells 6 of the antenna room 3. The radio frequency chip 15a is composed of a planar coil antenna forming a substantially angular spiral shape, and adjacent antenna sheets are wound around the antenna line in opposite directions. One end of the antenna sheet 15a is connected from the small cells 6 of the antenna room 3 to the power supply bars 16 6-8-(6) 1284367 extending vertically, and the other end is connected to the body container 1 and grounded via the body container 1 An antenna 1b for integrating the impedance of the plasma into the transmission path impedance of the high frequency is provided on the sky wall 3b of the antenna chamber 3, and the upper end of each of the power supply rods 16 is connected to the integrator 17. Further, the integrator 17 is provided with a high-frequency power source 18 having a frequency of 13.56 MHz for forming an inductive electric field. In the plasma processing, high-frequency power of, for example, a frequency of 13.56 MHz for forming an inductive electric field is supplied from the high-frequency power source 18 to the radio frequency 15. Thus, an inductive electric field is formed in the processing chamber 4 by the radio frequency 15 to which the high-frequency power is supplied. By the inductive electric field, the plasma is supplied from the processing gas supply system 20 through the gas supply pipe 14, the gas flow path 12, and the gas. The process gas discharged from the discharge port 13 is discharged. At this time, the output of the high-frequency power source 18 is appropriately set to be sufficient for generating plasma. A susceptor 22 that sandwiches the dielectric wall 2 and faces the radio frequency 15 with respect to the mounting table on which the LCD substrate G is placed is disposed below the processing chamber 4. The susceptor 22 is made of a conductive material such as aluminum whose surface is anodized. The LCD glass substrate G placed on the susceptor 22 is sucked and held by the susceptor 22 by an electrostatic chuck (not shown). The pedestal 22 is housed in the insulator frame 24 and is also supported by the hollow struts 25. The pillar 25 penetrates the bottom of the main body container 1 and maintains an airtight state, and supports an elevating mechanism (not shown) disposed outside the main body container 1 , and drives the susceptor 22 in the up and down direction by the elevating mechanism when loading and unloading the substrate G . In addition, a corrugated tube 26 that hermetically surrounds the strut 25 is disposed between the insulator frame 24 of the accommodating base 22 and the bottom of the main body container 1 to ensure that the susceptor 22 can be shaken up and down even if the pedestal 22 is swayed up and down. The airtightness in the processing container 4 is maintained. Further, a loading/unloading port 27 for loading and unloading the substrate G is provided in the side wall 4a of the processing chamber 4, and the loading/unloading port 27 is opened and closed by the valve 27a. The susceptor 2 2 is connected to the high frequency power source 29 via the integrator 28 via the power supply rods 25 5 a provided in the hollow struts 25 . The high-frequency power source 29 applies a high-frequency power of, for example, a frequency of 3·2 对 to the susceptor 22 in the plasma processing. The high-frequency power for the bias is effective to efficiently introduce ions in the plasma generated in the processing chamber 4 into the substrate G. Further, in order to control the temperature of the substrate G in the susceptor 22, a temperature control mechanism composed of a heating means such as a ceramic heater or a cold coal flow path or the like and a temperature sensor (all not shown) are provided. The piping or wiring opposite to the above mechanism or member is led out to the outside of the main body container 1 through any of the hollow struts 25. An exhaust mechanism 30 including a vacuum merging or the like is connected to the bottom of the processing chamber 4 via a discharge pipe 31, and the gas in the processing chamber 4 is discharged by the exhaust mechanism 30, and the processing chamber 4 is subjected to plasma processing. The internal settings are maintained in a specific vacuum environment (eg 1.33 Pa). Then, the processing operation when the plasma etching treatment is applied to the LCD glass substrate G will be described using an inductively coupled etching apparatus configured as described above. First, the gate valve 27a is opened and moved by a transport mechanism (not shown). The transfer port 27 carries the substrate G into the processing chamber 4, and after being placed on the mounting surface of the susceptor 22, the -10-(8) 1284367 substrate G is fixed to the pedestal by an electrostatic chuck (not shown). 22 on. Then, the processing gas supplied from the processing gas supply system 20 is discharged into the processing chamber 4 from the gas discharge port 13 through the gas supply pipe 14 and the gas flow path 12 in the processing chamber 4, and by the exhaust mechanism 3 0 Vacuum evacuation is performed in the processing chamber 4 through the exhaust pipe 31, and the inside of the processing chamber 4 is maintained at a pressure environment of, for example, about 1.3 3 Pa. Then, a high frequency of 13.56 将 is applied from the high-frequency power source 18 via the integrator 17 and the power-feeding rod 16 to the respective antenna sheets 15a of the radio frequency 15, whereby uniformity is formed in the processing chamber 4 via the dielectric body wall 2 Inductive electric field. The inductive electric field formed by this method is used to plasma treat the gas in the processing chamber 4, and a high-density inductively coupled plasma is generated. The ions in the plasma generated in this way are efficiently pulled into the substrate G by the high frequency power of 3.2 MHz applied from the high frequency power source 29 to the susceptor 22, and a uniform etching treatment can be applied to the substrate G. At this time, two opposite side walls 3a of the antenna chamber 3 having the bottom wall formed by the dielectric body wall 2 are respectively supported, and two vertical walls 5 constituting a cross shape are provided, and the antenna is fixed by the vertical wall 5. The chamber 3 is divided into four small chambers, and the dielectric body wall 2 is divided into a plurality of cells corresponding to the plurality of small cells, and the divided pieces 2a of the dielectric body wall 2 are supported by the side walls 3a and the vertical walls 5 of the antenna chamber 3, due to the support The element is a vertical wall, so that it is not necessary to widen the supporting portion of the dielectric body wall 2, and it is not necessary to thicken the dielectric body wall 2 to prevent separation between the processing chamber 4 including the dielectric body wall 2 and the antenna chamber 3. Deflection of the separation structure. Further, the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the antenna pieces 1 5 a -11 - (9) 1284367 of the radio frequency 15 disposed in each of the cells 6 are supplied from one high-frequency power source via the integrator, but as shown in FIG. Each of the cells 6 is provided with a separate RF 15', and a plurality of integrators 17' and a high-frequency power supply 1 8' are provided corresponding to the respective RFs 15'. Further, in the above-described embodiment, the vertical wall is provided in a cross shape, but as shown in Fig. 5, only one vertical wall 5 may be provided and the antenna chamber 3 may be divided into two, as shown in Fig. 6, The vertical wall 5 may be arranged in parallel with a plurality of sheets, and the antenna chamber 3 may be divided. Further, in the above embodiment, the present invention is applied to an etching apparatus, but it is not limited to application to an etching apparatus, and may be applied to other plasma processing apparatuses such as sputtering and CVD film formation. Then, although an LCD substrate is used as the substrate to be processed, the present invention is not limited to this and can be applied to other substrates such as semiconductor wafers. [Effect of the Invention] As described above, according to the present invention, a vertical wall supported by a side wall of an antenna chamber in which a dielectric wall is formed with a bottom wall is divided into a plurality of cells, and the dielectric body wall and the plural The small chambers are divided into a plurality of partitions, and the divided pieces of the dielectric body wall are supported by the side walls of the antenna chamber and the vertical wall. Since the supporting elements are vertical walls, it is not necessary to widen the supporting portion of the dielectric body wall, and It is not necessary to thicken the dielectric body wall to prevent deflection of the separation structure between the processing chamber containing the dielectric wall and the antenna chamber. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a vertical sectional view showing an inductively coupled plasma etching apparatus -12 - 1284367 do) of an embodiment of the present invention. Figure 2 is a horizontal cross-sectional view of the antenna chamber of the inductively coupled etching apparatus of Figure 1. Figure 3 is a perspective view of the vertical wall of the inductively coupled etching apparatus of Figure 1. Fig. 4 is a schematic perspective view showing an antenna portion of an inductively coupled plasma etching apparatus according to another embodiment of the present invention. Fig. 5 is a cross-sectional view showing another example of the state in which the vertical walls of the antenna chamber are separated. Fig. 6 is a horizontal sectional view showing still another example of the separation state of the vertical walls of the antenna chamber. [Description of component symbols] 1 Main body container 2 Dielectric wall 2a Divided piece 3 Antenna chamber 3 a Side wall 4 Processing chamber 5 Vertical wall 5a Intersection 6 Chamber 7 Support shed 11 Gas introduction port-13- (11) 1284367 12 Gas flow Road 13 Gas discharge □ 14 Gas supply pipe 15, 1 5 5 RF 15a Antenna piece 18 Local frequency power supply 20 Process gas supply system 22 Base 30 Exhaust mechanism G LCD glass substrate