CN117015860A - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN117015860A
CN117015860A CN202280021530.7A CN202280021530A CN117015860A CN 117015860 A CN117015860 A CN 117015860A CN 202280021530 A CN202280021530 A CN 202280021530A CN 117015860 A CN117015860 A CN 117015860A
Authority
CN
China
Prior art keywords
layer
semiconductor layer
type impurity
side semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280021530.7A
Other languages
English (en)
Chinese (zh)
Inventor
船越良太
岸野利彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN117015860A publication Critical patent/CN117015860A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
CN202280021530.7A 2021-03-18 2022-03-03 发光元件 Pending CN117015860A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-045210 2021-03-18
JP2021045210 2021-03-18
PCT/JP2022/009141 WO2022196374A1 (ja) 2021-03-18 2022-03-03 発光素子

Publications (1)

Publication Number Publication Date
CN117015860A true CN117015860A (zh) 2023-11-07

Family

ID=83322280

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280021530.7A Pending CN117015860A (zh) 2021-03-18 2022-03-03 发光元件

Country Status (6)

Country Link
US (1) US20240072209A1 (https=)
EP (1) EP4310926A4 (https=)
JP (1) JPWO2022196374A1 (https=)
KR (1) KR20230157953A (https=)
CN (1) CN117015860A (https=)
WO (1) WO2022196374A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024131320A (ja) * 2023-03-16 2024-09-30 豊田合成株式会社 発光素子および発光素子の製造方法
KR102852314B1 (ko) * 2023-11-07 2025-08-29 한국광기술원 다중 직렬 접합구조를 가져 광 특성을 향상시킨 질화갈륨 발광다이오드 및 그의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072262A1 (en) * 2007-09-19 2009-03-19 The Regents Of The University Of California (Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
TW201340371A (zh) * 2012-03-30 2013-10-01 Phostek Inc 發光二極體裝置
JP2018201009A (ja) * 2017-05-25 2018-12-20 昭和電工株式会社 発光ダイオードおよびトンネル接合層の製造方法
CN109690783A (zh) * 2016-05-20 2019-04-26 亮锐有限责任公司 形成发光器件的p型层的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9913950D0 (en) * 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP2001298215A (ja) * 2000-04-14 2001-10-26 Nichia Chem Ind Ltd 発光素子
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
JP2010016079A (ja) * 2008-07-02 2010-01-21 Toyoda Gosei Co Ltd 発光素子、および発光素子の製造方法
TWI502765B (zh) * 2012-02-24 2015-10-01 華夏光股份有限公司 發光二極體裝置
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
TW201344955A (zh) * 2012-04-27 2013-11-01 華夏光股份有限公司 發光二極體裝置
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
JP6708442B2 (ja) 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
EP3459117B1 (en) * 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
KR102630680B1 (ko) * 2019-05-02 2024-01-30 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 패널

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072262A1 (en) * 2007-09-19 2009-03-19 The Regents Of The University Of California (Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
TW201340371A (zh) * 2012-03-30 2013-10-01 Phostek Inc 發光二極體裝置
CN109690783A (zh) * 2016-05-20 2019-04-26 亮锐有限责任公司 形成发光器件的p型层的方法
JP2018201009A (ja) * 2017-05-25 2018-12-20 昭和電工株式会社 発光ダイオードおよびトンネル接合層の製造方法

Also Published As

Publication number Publication date
JPWO2022196374A1 (https=) 2022-09-22
KR20230157953A (ko) 2023-11-17
EP4310926A4 (en) 2025-01-22
US20240072209A1 (en) 2024-02-29
WO2022196374A1 (ja) 2022-09-22
EP4310926A1 (en) 2024-01-24

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