KR20230157953A - 발광 소자 - Google Patents

발광 소자 Download PDF

Info

Publication number
KR20230157953A
KR20230157953A KR1020237029378A KR20237029378A KR20230157953A KR 20230157953 A KR20230157953 A KR 20230157953A KR 1020237029378 A KR1020237029378 A KR 1020237029378A KR 20237029378 A KR20237029378 A KR 20237029378A KR 20230157953 A KR20230157953 A KR 20230157953A
Authority
KR
South Korea
Prior art keywords
layer
semiconductor layer
side semiconductor
type impurity
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237029378A
Other languages
English (en)
Korean (ko)
Inventor
료타 후나코시
토시히코 키시노
Original Assignee
니치아 카가쿠 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니치아 카가쿠 고교 가부시키가이샤 filed Critical 니치아 카가쿠 고교 가부시키가이샤
Publication of KR20230157953A publication Critical patent/KR20230157953A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L33/08—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H01L33/025—
    • H01L33/04—
    • H01L33/32—
    • H01L33/38—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
KR1020237029378A 2021-03-18 2022-03-03 발광 소자 Pending KR20230157953A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-045210 2021-03-18
JP2021045210 2021-03-18
PCT/JP2022/009141 WO2022196374A1 (ja) 2021-03-18 2022-03-03 発光素子

Publications (1)

Publication Number Publication Date
KR20230157953A true KR20230157953A (ko) 2023-11-17

Family

ID=83322280

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237029378A Pending KR20230157953A (ko) 2021-03-18 2022-03-03 발광 소자

Country Status (6)

Country Link
US (1) US20240072209A1 (https=)
EP (1) EP4310926A4 (https=)
JP (1) JPWO2022196374A1 (https=)
KR (1) KR20230157953A (https=)
CN (1) CN117015860A (https=)
WO (1) WO2022196374A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024131320A (ja) * 2023-03-16 2024-09-30 豊田合成株式会社 発光素子および発光素子の製造方法
KR102852314B1 (ko) * 2023-11-07 2025-08-29 한국광기술원 다중 직렬 접합구조를 가져 광 특성을 향상시킨 질화갈륨 발광다이오드 및 그의 제조방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9913950D0 (en) * 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP2001298215A (ja) * 2000-04-14 2001-10-26 Nichia Chem Ind Ltd 発光素子
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
US8183557B2 (en) * 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
JP2010016079A (ja) * 2008-07-02 2010-01-21 Toyoda Gosei Co Ltd 発光素子、および発光素子の製造方法
TWI502765B (zh) * 2012-02-24 2015-10-01 華夏光股份有限公司 發光二極體裝置
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
TW201344955A (zh) * 2012-04-27 2013-11-01 華夏光股份有限公司 發光二極體裝置
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
JP6708442B2 (ja) 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
KR102135836B1 (ko) * 2016-05-20 2020-07-21 루미레즈 엘엘씨 발광 디바이스를 위한 p형 층을 형성하는 방법
EP3459117B1 (en) * 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
KR102630680B1 (ko) * 2019-05-02 2024-01-30 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 패널

Also Published As

Publication number Publication date
JPWO2022196374A1 (https=) 2022-09-22
CN117015860A (zh) 2023-11-07
EP4310926A4 (en) 2025-01-22
US20240072209A1 (en) 2024-02-29
WO2022196374A1 (ja) 2022-09-22
EP4310926A1 (en) 2024-01-24

Similar Documents

Publication Publication Date Title
CN100403564C (zh) 单片多色、多量子阱半导体发光二极管及制造其的方法
US12068429B2 (en) Method for manufacturing light-emitting element
US7084420B2 (en) Nitride based semiconductor device
JP4954536B2 (ja) 窒化物半導体発光素子
US20090321745A1 (en) Semiconductor light-emitting device
JP7481618B2 (ja) 窒化物半導体素子の製造方法
TWI569467B (zh) 半導體發光元件
KR100784065B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR101903361B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR20230157953A (ko) 발광 소자
US11538962B2 (en) Light-emitting element and method for manufacturing light-emitting element
US7718992B2 (en) Nitride semiconductor device
US8659041B2 (en) Nitride semiconductor light emitting diode
JP7432844B2 (ja) 窒化物半導体発光素子
US20090078961A1 (en) Nitride-based light emitting device
US12501746B2 (en) Light-emitting element including p-side layer with first and second layers having different p-type impurity concentrations and method for manufacturing same
US12027646B2 (en) Light emitting element
US12527140B2 (en) Method of manufacturing light emitting element
JP7344434B2 (ja) 発光素子の製造方法
US20150243845A1 (en) Light-emitting device
JP2025041822A (ja) 窒化物半導体発光素子
CN116097457A (zh) 氮化物半导体元件及氮化物半导体元件的制造方法
JP2009218235A (ja) 発光ダイオード

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230829

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20241230

Comment text: Request for Examination of Application