JPWO2022196374A1 - - Google Patents

Info

Publication number
JPWO2022196374A1
JPWO2022196374A1 JP2023506960A JP2023506960A JPWO2022196374A1 JP WO2022196374 A1 JPWO2022196374 A1 JP WO2022196374A1 JP 2023506960 A JP2023506960 A JP 2023506960A JP 2023506960 A JP2023506960 A JP 2023506960A JP WO2022196374 A1 JPWO2022196374 A1 JP WO2022196374A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023506960A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022196374A1 publication Critical patent/JPWO2022196374A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
JP2023506960A 2021-03-18 2022-03-03 Pending JPWO2022196374A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021045210 2021-03-18
PCT/JP2022/009141 WO2022196374A1 (ja) 2021-03-18 2022-03-03 発光素子

Publications (1)

Publication Number Publication Date
JPWO2022196374A1 true JPWO2022196374A1 (https=) 2022-09-22

Family

ID=83322280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023506960A Pending JPWO2022196374A1 (https=) 2021-03-18 2022-03-03

Country Status (6)

Country Link
US (1) US20240072209A1 (https=)
EP (1) EP4310926A4 (https=)
JP (1) JPWO2022196374A1 (https=)
KR (1) KR20230157953A (https=)
CN (1) CN117015860A (https=)
WO (1) WO2022196374A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024131320A (ja) * 2023-03-16 2024-09-30 豊田合成株式会社 発光素子および発光素子の製造方法
KR102852314B1 (ko) * 2023-11-07 2025-08-29 한국광기술원 다중 직렬 접합구조를 가져 광 특성을 향상시킨 질화갈륨 발광다이오드 및 그의 제조방법

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036134A (ja) * 1999-06-15 2001-02-09 Arima Optoelectronics Corp Ｉｉｉ族窒化物半導体超格子をベースとした単極発光装置
JP2001298215A (ja) * 2000-04-14 2001-10-26 Nichia Chem Ind Ltd 発光素子
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
JP2010016079A (ja) * 2008-07-02 2010-01-21 Toyoda Gosei Co Ltd 発光素子、および発光素子の製造方法
JP2010532926A (ja) * 2007-07-09 2010-10-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射線放出半導体ボディ
JP2010539731A (ja) * 2007-09-19 2010-12-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア パターン化した基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ装置
US20130221321A1 (en) * 2012-02-24 2013-08-29 Phostek, Inc. Light-emitting diode device
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
US20130285076A1 (en) * 2012-04-27 2013-10-31 Phostek, Inc. Light emitting diode device
US20150060877A1 (en) * 2013-08-30 2015-03-05 Epistar Corporation Optoelectronic semiconductor device with barrier layer
JP2019517144A (ja) * 2016-05-20 2019-06-20 ルミレッズ リミテッド ライアビリティ カンパニー 発光デバイスのｐ型層を形成する方法
US20200350477A1 (en) * 2019-05-02 2020-11-05 Samsung Electronics Co., Ltd. Light emitting diode element, method of manufacturing light emitting diode element, and display panel including light emitting diode element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
JP6708442B2 (ja) 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
EP3459117B1 (en) * 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036134A (ja) * 1999-06-15 2001-02-09 Arima Optoelectronics Corp Ｉｉｉ族窒化物半導体超格子をベースとした単極発光装置
JP2001298215A (ja) * 2000-04-14 2001-10-26 Nichia Chem Ind Ltd 発光素子
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
JP2010532926A (ja) * 2007-07-09 2010-10-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射線放出半導体ボディ
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
JP2010539731A (ja) * 2007-09-19 2010-12-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア パターン化した基板上の（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ装置
JP2010016079A (ja) * 2008-07-02 2010-01-21 Toyoda Gosei Co Ltd 発光素子、および発光素子の製造方法
US20130221321A1 (en) * 2012-02-24 2013-08-29 Phostek, Inc. Light-emitting diode device
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
US20130285076A1 (en) * 2012-04-27 2013-10-31 Phostek, Inc. Light emitting diode device
US20150060877A1 (en) * 2013-08-30 2015-03-05 Epistar Corporation Optoelectronic semiconductor device with barrier layer
JP2019517144A (ja) * 2016-05-20 2019-06-20 ルミレッズ リミテッド ライアビリティ カンパニー 発光デバイスのｐ型層を形成する方法
US20200350477A1 (en) * 2019-05-02 2020-11-05 Samsung Electronics Co., Ltd. Light emitting diode element, method of manufacturing light emitting diode element, and display panel including light emitting diode element

Also Published As

Publication number Publication date
CN117015860A (zh) 2023-11-07
KR20230157953A (ko) 2023-11-17
EP4310926A4 (en) 2025-01-22
US20240072209A1 (en) 2024-02-29
WO2022196374A1 (ja) 2022-09-22
EP4310926A1 (en) 2024-01-24

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