CN116918200A - 光子晶体面发光激光器及其制造方法 - Google Patents

光子晶体面发光激光器及其制造方法 Download PDF

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Publication number
CN116918200A
CN116918200A CN202280018249.8A CN202280018249A CN116918200A CN 116918200 A CN116918200 A CN 116918200A CN 202280018249 A CN202280018249 A CN 202280018249A CN 116918200 A CN116918200 A CN 116918200A
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CN
China
Prior art keywords
region
layer
photonic crystal
semiconductor layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280018249.8A
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English (en)
Chinese (zh)
Inventor
藤原直树
河野直哉
古谷章
伊藤友树
野田进
井上卓也
石崎贤司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Kyoto University NUC
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Sumitomo Electric Industries Ltd
Kyoto University NUC
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd, Kyoto University NUC filed Critical Sumitomo Electric Industries Ltd
Publication of CN116918200A publication Critical patent/CN116918200A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202280018249.8A 2021-03-19 2022-03-04 光子晶体面发光激光器及其制造方法 Pending CN116918200A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-045486 2021-03-19
JP2021045486 2021-03-19
PCT/JP2022/009415 WO2022196394A1 (ja) 2021-03-19 2022-03-04 フォトニック結晶面発光レーザおよびその製造方法

Publications (1)

Publication Number Publication Date
CN116918200A true CN116918200A (zh) 2023-10-20

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Family Applications (1)

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CN202280018249.8A Pending CN116918200A (zh) 2021-03-19 2022-03-04 光子晶体面发光激光器及其制造方法

Country Status (5)

Country Link
US (1) US20240170917A1 (https=)
EP (1) EP4311043A4 (https=)
JP (1) JP7811935B2 (https=)
CN (1) CN116918200A (https=)
WO (1) WO2022196394A1 (https=)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548210A (ja) * 1991-08-09 1993-02-26 Mitsubishi Electric Corp 半導体レーザ装置
JPH0918081A (ja) * 1995-06-29 1997-01-17 Mitsubishi Electric Corp 半導体レーザ
JP2003264346A (ja) 2002-03-08 2003-09-19 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
JP2005203644A (ja) 2004-01-19 2005-07-28 Yokogawa Electric Corp 面発光レーザ
DE102004040077A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung
JP4366598B2 (ja) 2004-11-01 2009-11-18 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置
JP5037835B2 (ja) * 2006-02-28 2012-10-03 キヤノン株式会社 垂直共振器型面発光レーザ
JP4793820B2 (ja) 2006-03-20 2011-10-12 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP5168849B2 (ja) * 2006-08-11 2013-03-27 住友電気工業株式会社 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法
JP4956119B2 (ja) 2006-09-27 2012-06-20 キヤノン株式会社 発光素子およびそれを用いた表示素子
JP5177130B2 (ja) * 2007-03-23 2013-04-03 住友電気工業株式会社 フォトニック結晶レーザおよびフォトニック結晶レーザの製造方法
JP4975130B2 (ja) * 2009-05-07 2012-07-11 キヤノン株式会社 フォトニック結晶面発光レーザ
JP5047258B2 (ja) 2009-12-09 2012-10-10 キヤノン株式会社 二次元フォトニック結晶面発光レーザ
WO2012149497A2 (en) * 2011-04-29 2012-11-01 The Regents Of The University Of California Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating
CN102623890A (zh) 2012-03-27 2012-08-01 北京工业大学 多孔缺陷匹配型光子晶体面发射激光器
US9991669B2 (en) 2016-07-25 2018-06-05 Hamamatsu Photonics K.K. Semiconductor light-emitting device and manufacturing method for the same
JP6951890B2 (ja) 2017-07-10 2021-10-20 浜松ホトニクス株式会社 半導体レーザ素子
DE112018006285T5 (de) * 2017-12-08 2021-01-28 Hamamatsu Photonics K.K. Lichtemittierende vorrichtung und herstellungsverfahren dafür
US10340659B1 (en) 2018-06-14 2019-07-02 Conary Enterprise Co., Ltd. Electronically pumped surface-emitting photonic crystal laser

Also Published As

Publication number Publication date
JPWO2022196394A1 (https=) 2022-09-22
WO2022196394A1 (ja) 2022-09-22
EP4311043A1 (en) 2024-01-24
JP7811935B2 (ja) 2026-02-06
US20240170917A1 (en) 2024-05-23
EP4311043A4 (en) 2024-08-28

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